| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/24/1984 | US4443930 Manufacturing method of silicide gates and interconnects for integrated circuits |
| 04/24/1984 | CA1166361A1 Method for fabricating improved complementary metal oxide semiconductor devices |
| 04/24/1984 | CA1166360A1 Titanium dioxide rectifier |
| 04/24/1984 | CA1166359A1 Gated diode switch |
| 04/24/1984 | CA1166353A1 Electrically erasable mosfet storage device |
| 04/24/1984 | CA1166336A1 Functional electric devices |
| 04/18/1984 | EP0105802A2 Programmable read only memory |
| 04/18/1984 | EP0105695A2 MOS/bipolar integrated circuit device and manufacturing method thereof |
| 04/18/1984 | EP0105324A1 OHMIC CONTACT FOR N-TYPE GaAs |
| 04/17/1984 | US4443886 Charge transfer device imager with bias charge |
| 04/17/1984 | US4443885 Charge transfer method and device for carrying out the method |
| 04/17/1984 | US4443812 High-breakdown-voltage semiconductor device |
| 04/17/1984 | US4443810 Gate turn-off amplified thyristor with non-shorted auxiliary anode |
| 04/17/1984 | US4443808 Semiconductor device |
| 04/17/1984 | US4443718 Nonvolatile semiconductor memory with stabilized level shift circuit |
| 04/17/1984 | US4443493 Laser induced flow glass materials |
| 04/17/1984 | US4442592 Passivated semiconductor pn junction of high electric strength and process for the production thereof |
| 04/17/1984 | US4442591 Silicon, masking, semiconductors, channels, boron, stripping |
| 04/17/1984 | US4442589 Method for manufacturing field effect transistors |
| 04/17/1984 | CA1165901A1 Method of manufacturing integrated circuits by means of a multilayer mask |
| 04/17/1984 | CA1165900A1 Process for manufacture of high power mosfet with laterally distributed high carrier density beneath the gate oxide |
| 04/17/1984 | CA1165899A1 Lateral insulated gate field effect transistor device |
| 04/17/1984 | CA1165875A1 Bipolar type static memory cell |
| 04/17/1984 | CA1165851A1 Epitaxial devices having reduced dislocation count |
| 04/12/1984 | WO1984001471A1 An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof |
| 04/11/1984 | EP0105189A1 Method of producing metal electrodes of diversing thiekness for semiconductor devices, especially for power semiconductor devices such as thyristors |
| 04/10/1984 | US4442529 Power supply rejection characteristics of CMOS circuits |
| 04/10/1984 | US4442449 Binary germanium-silicon interconnect and electrode structure for integrated circuits |
| 04/10/1984 | US4442448 Logic integrated circuit device |
| 04/10/1984 | US4442447 Electrically alterable nonvolatile floating gate memory device |
| 04/10/1984 | US4442445 Planar doped barrier gate field effect transistor |
| 04/10/1984 | US4442398 Integrated circuit generator in CMOS technology |
| 04/10/1984 | US4441932 Process for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zone |
| 04/10/1984 | US4441931 Method of making self-aligned guard regions for semiconductor device elements |
| 04/10/1984 | US4441249 Doping of polycrystalline silicon layer as it is formed |
| 04/10/1984 | US4441247 Metal-oxide-semiconductor integrated corcuits |
| 04/10/1984 | CA1165467A1 Electron irradiation of high level transistors |
| 04/10/1984 | CA1165464A1 Tunnel emitter upper valley transition |
| 04/10/1984 | CA1165434A2 Signal pick-up circuit |
| 04/04/1984 | EP0104754A1 Metal insulator semiconductor device with source region connected to a reference voltage |
| 04/04/1984 | EP0104686A1 Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process |
| 04/04/1984 | EP0104615A2 Semiconductor memory cell |
| 04/04/1984 | EP0104454A2 Semiconductor device with field plate |
| 04/04/1984 | EP0104390A1 Gate turn-off thyristor |
| 04/04/1984 | EP0064081A4 Charge coupled device open circuit image detector. |
| 04/03/1984 | US4441117 Monolithically merged field effect transistor and bipolar junction transistor |
| 04/03/1984 | US4441116 Controlling secondary breakdown in bipolar power transistors |
| 04/03/1984 | US4441115 Thyristor having a center pn junction formed by plastic deformation of the crystal lattice |
| 04/03/1984 | US4441114 CMOS Subsurface breakdown zener diode |
| 04/03/1984 | US4441036 Monolithically integrated circuit with connectible and/or disconnectible circuit portions |
| 04/03/1984 | US4440580 Method of fabricating an integrated bipolar planar transistor by implanting base and emitter regions through the same insulating layer |
| 04/03/1984 | CA1165015A1 Organometallic semiconductor devices |
| 04/03/1984 | CA1165013A1 Semiconductor passivation method |
| 04/03/1984 | CA1165012A1 Method of manufacturing a semiconductor device |
| 04/03/1984 | CA1165011A1 Semiconductor embedded layer technology including permeable base transistor, fabrication method and integrated circuits |
| 04/03/1984 | CA1165009A1 Semiconductor device comprising a number of series-arranged diodes and method of manufacturing same |
| 03/29/1984 | WO1984001241A1 Cmos integrated circuit with guard bands for latch-up protection |
| 03/29/1984 | WO1984001239A1 Method for manufacturing a display screen based on thin layer transistors and capacitors |
| 03/28/1984 | EP0104094A1 Method of producing a semiconductor device, using a radiation-sensitive resist |
| 03/28/1984 | EP0104079A2 Integrated circuit contact structure |
| 03/28/1984 | EP0103934A2 Insulated-gate field-effect transistors |
| 03/28/1984 | EP0103653A1 Method of making a monolithic integrated circuit with at least one bipolar planar transistor |
| 03/27/1984 | US4439399 Quaternary alloy |
| 03/27/1984 | US4439268 Indium phosphide, etching |
| 03/27/1984 | CA1164561A1 Semiconductor memory device |
| 03/21/1984 | EP0103523A1 Method of making a display comprising thin-film transistors and capacitors |
| 03/21/1984 | EP0103306A2 Semiconductor protective device |
| 03/21/1984 | EP0103181A1 Thyristor with connectible current sources |
| 03/21/1984 | EP0103138A2 Semiconductor rectifier diode |
| 03/21/1984 | EP0103043A1 CMOS memory cell with floating memory gate |
| 03/20/1984 | US4438448 Zig-zag V-MOS transistor structure |
| 03/20/1984 | US4438445 Variable capacitance diode and method of making the same |
| 03/20/1984 | US4437969 Offset-gate chemical-sensitive field-effect transistors (OG-CHEMFETS) with electrolytically-programmable selectivity |
| 03/20/1984 | US4437962 Diamondlike flake composites |
| 03/20/1984 | US4437925 Etched-source static induction transistor |
| 03/20/1984 | US4437897 Fabrication process for a shallow emitter/base transistor using same polycrystalline layer |
| 03/20/1984 | US4437226 Process for producing NPN type lateral transistor with minimal substrate operation interference |
| 03/20/1984 | CA1164105A1 Semiconductor component |
| 03/15/1984 | WO1984001056A1 Semiconductor photoelectric converter |
| 03/15/1984 | WO1984001054A1 Photothyristor |
| 03/15/1984 | WO1984001052A1 Process for forming a cmos structure |
| 03/14/1984 | EP0102802A1 Photolithographic process for fabricating thin film transistors |
| 03/14/1984 | EP0102795A1 A method of manufacturing a semiconductor device using the master slice technique |
| 03/14/1984 | EP0102647A2 Input protection device for C-MOS device |
| 03/13/1984 | US4437174 Semiconductor memory device |
| 03/13/1984 | US4437172 Semiconductor memory device |
| 03/13/1984 | US4437139 Laser annealed dielectric for dual dielectric capacitor |
| 03/13/1984 | US4437135 Semiconductor integrated circuit device |
| 03/13/1984 | US4437107 Self-igniting thyristor with a plurality of discrete, field controlled zener diodes |
| 03/13/1984 | US4437077 Semiconductor device usable at very high frequencies and its production process |
| 03/13/1984 | US4436770 Vapor deposition |
| 03/13/1984 | US4435899 Method of producing lateral transistor separated from substrate by intersecting slots filled with substrate oxide |
| 03/13/1984 | US4435898 Method for making a base etched transistor integrated circuit |
| 03/13/1984 | US4435895 Process for forming complementary integrated circuit devices |
| 03/13/1984 | CA1163730A1 Method for manufacture of integrated semiconductor circuits, in particular ccd-circuits, with self- adjusting nonoverlapping polysilicon electrodes |
| 03/13/1984 | CA1163729A1 Channel barrier modulated semiconductor device |
| 03/13/1984 | CA1163728A1 Thyristor having controllable emitter short circuits and a method for its operation |
| 03/13/1984 | CA1163714A1 One device field effect transistor (fet) ac stable random access memory (ram) array |
| 03/13/1984 | CA1163712A1 Electrostatically deformographic switches |
| 03/07/1984 | EP0102178A2 Semiconductor memory device |