Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1983
12/06/1983US4419150 Method of forming lateral bipolar transistors
12/06/1983US4418469 Method of simultaneously forming buried resistors and bipolar transistors by ion implantation
12/06/1983US4418468 Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
12/06/1983CA1158366A1 Semiconductor device of the high frequency field effect transistor type and charge coupled device using such a semiconductor
12/06/1983CA1158365A1 Insulated gate type transistors
11/1983
11/30/1983EP0095328A2 Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region
11/30/1983EP0095283A2 Memory device
11/30/1983EP0095184A2 Schottky diode
11/30/1983EP0095183A2 Schottky diode
11/30/1983EP0094974A1 Semiconductor photoelectric converter
11/30/1983EP0094973A1 Semiconductor photoelectric converter
11/29/1983US4418094 Vertical-etch direct moat isolation process
11/29/1983US4417387 Gold metallization in semiconductor devices
11/29/1983US4417385 Processes for manufacturing insulated-gate semiconductor devices with integral shorts
11/29/1983CA1157964A1 Self-aligned mos fabrication
11/29/1983CA1157963A1 Silicon-based semiconductor devices
11/29/1983CA1157962A1 Method of growing a doped iii-v alloy layer by molecular beam epitaxy
11/29/1983CA1157961A1 Hot electron or hot hole transistor
11/29/1983CA1157951A1 Monolithic static memory cell
11/23/1983EP0094891A2 Method of fabricating a vertical power MOSFET structure
11/23/1983EP0094559A1 Method of manufacturing integrated MOS field effect transistors with an additional interconnection level consisting of metal silicides
11/23/1983EP0094482A2 Fabrication process for a shallow emitter, narrow intrinsic base transistor
11/23/1983EP0094426A1 Bandgap control in amorphous semiconductors.
11/22/1983US4417265 Lateral PNP power transistor
11/22/1983US4417264 Electrically alterable, nonvolatile floating gate memory device
11/22/1983US4417263 Semiconductor device
11/22/1983US4416952 Passivation, dielectrics, optical absorbers
11/22/1983US4416708 Controlling doping across emitter area with masking pattern
11/22/1983US4416053 Transistor with buffer layer between active region and substrate
11/22/1983CA1157574A1 Cmos p-well selective implant method
11/22/1983CA1157573A1 Bipolar transistors
11/16/1983EP0094145A2 High gain thyristor switching circuit
11/16/1983EP0094129A2 Semiconductor devices comprising unipolar hot-carrier transistors and methods of manufacturing the same
11/16/1983EP0093971A2 Semiconductor device having an interstitial transition element layer and method of manufacturing the same
11/16/1983EP0093866A2 Schottky diode
11/16/1983EP0093818A1 Integrated monolithic circuit with integrated capacitors
11/16/1983EP0093786A1 Method of making a monolithic integrated circuit with at least one isolated gate field effect transistor and one bipolar transistor
11/15/1983US4415948 Electrostatic bonded, silicon capacitive pressure transducer
11/15/1983US4415531 Semiconductor materials
11/15/1983US4415384 High-frequency transistors
11/15/1983US4415371 Method of making sub-micron dimensioned NPN lateral transistor
11/15/1983US4415370 Method of beryllium implantation in germanium substrate
11/15/1983US4414737 Production of Schottky barrier diode
11/15/1983CA1157168A1 Ctd line having a plurality of ctd elements
11/15/1983CA1157165A1 Short channel field effect transistors
11/15/1983CA1157136A1 Light-activated p-i-n switch
11/15/1983CA1157135A1 Light triggered thyristor device
11/14/1983EP0037402A4 Semiconductor memory having a stabilized substrate bias and narrow-width transfer gates.
11/09/1983EP0093557A2 High-speed complementary semiconductor integrated circuit
11/08/1983US4414561 Beryllium-gold ohmic contact to a semiconductor device
11/08/1983US4414560 Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
11/08/1983US4414559 Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions
11/08/1983US4414557 Bipolar transistors
11/08/1983US4414242 Process for fabricating a semiconductor device
11/08/1983US4414058 Method for producing dynamic semiconductor memory cells with random access (RAM) by double polysilicon gate technology
11/08/1983US4413403 Method of producing semiconductor devices
11/08/1983US4413401 Method for making a semiconductor capacitor
11/08/1983CA1156770A1 Thyristor having controllable emitter short circuits
11/08/1983CA1156729A1 Logical nor bipolar program logic array
11/02/1983EP0093086A2 Bipolar semi-conductor device and MOS circuit with such a device
11/02/1983EP0092926A2 Background subtraction in a charge transfer device; method and apparatus thereof
11/02/1983EP0092871A2 Semiconductor integrated circuits and method of manufacturing
11/02/1983EP0092671A2 Transistor for integrated circuits
11/02/1983EP0092645A2 Transistor and circuit including a transistor
11/02/1983EP0092643A2 Ballistic conduction transistor
11/01/1983US4413343 Gold-containing electrode
11/01/1983US4412378 Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation
11/01/1983US4412376 Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
11/01/1983US4412375 Method for fabricating CMOS devices with guardband
10/1983
10/27/1983WO1983003713A1 OHMIC CONTACT FOR N-TYPE GaAs
10/27/1983WO1983003709A1 Process for forming complementary integrated circuit devices
10/27/1983WO1983003708A1 Photodetectors
10/26/1983EP0092266A1 Process for manufacturing GaAs field effect transistors by ion implantation, and transistor made by this process
10/26/1983EP0091984A2 Integrated circuit devices comprising dielectric isolation regions and methods for making such devices
10/25/1983US4412344 Integrated rectifier circuit
10/25/1983US4412343 Charge transfer circuits with dark current compensation
10/25/1983US4412311 Storage cell for nonvolatile electrically alterable memory
10/25/1983US4412310 EPROM Cell with reduced programming voltage and method of fabrication
10/25/1983US4412242 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
10/25/1983US4412239 Polysilicon interconnects with pin poly diodes
10/25/1983US4412238 Simplified BIFET structure
10/25/1983US4412237 Semiconductor device
10/25/1983US4411981 Method for forming a pattern in a thin-film transistor having tellurium semiconductor layer
10/25/1983US4411741 Chemically sensitive field effect transistor
10/25/1983US4411708 Masking, dejpositing polysilicon on surface of semiconductors, doping, and annealing
10/25/1983US4411058 Process for fabricating CMOS devices with self-aligned channel stops
10/25/1983CA1155972A1 Fet memory cell structure and process
10/25/1983CA1155971A1 Semiconductor device
10/25/1983CA1155970A1 Semiconductor device fabrication
10/25/1983CA1155969A1 Field effect transistor device and method of production thereof
10/25/1983CA1155968A1 Zener diode
10/19/1983EP0091831A2 Mobility-modulation field effect transistor
10/19/1983EP0091710A2 Transistors
10/19/1983EP0091686A2 Semiconductor device having a diffused region of reduced length and method of fabricating the same
10/19/1983EP0091624A2 Method of manufacturing vertical semiconductor devices
10/19/1983EP0091548A2 Semiconductor structure comprising a mesa region, process for forming a semiconductor mesa; vertical field effect transistor and method of forming a vertical semiconductor device
10/18/1983US4410903 High frequency modulation; increased output currents and bandwidths; indium phosphide and indium gallium arsenide
10/18/1983US4410902 Planar doped barrier semiconductor device
10/18/1983US4410816 ECL Integrated circuit
10/18/1983US4410580 Semiconductor wafer
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