Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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06/14/1983 | US4388121 Reduced field implant for dynamic memory cell array |
06/14/1983 | CA1148275A1 Optically controllable static induction thyristor device |
06/14/1983 | CA1148274A1 Method for making stable nitride-defined schottky barrier diodes |
06/14/1983 | CA1148273A1 Consumable amorphous or polysilicon emitter process |
06/14/1983 | CA1148272A1 Vertical field effect transistor with improved gate and channel structure |
06/14/1983 | CA1148270A1 Mesa type semiconductor device with guard ring |
06/14/1983 | CA1148269A1 High performance pnp and npn transistor structure and process for fabricating same |
06/09/1983 | WO1983002038A1 Semiconductor photoelectric converter |
06/09/1983 | WO1983002037A1 Semiconductor photoelectric converter |
06/09/1983 | WO1983002036A1 Semiconductor diode |
06/08/1983 | EP0080937A1 Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process |
06/08/1983 | EP0080851A2 A method for forming monocrystalline semiconductor film on insulating film |
06/08/1983 | EP0080740A2 Circuit arrangement for switching power circuits by using high-voltage MOS transistors |
06/08/1983 | EP0080731A2 Semiconductor device comprising a buried oxide isolation |
06/08/1983 | EP0080714A2 Hetero-junction semiconductor device |
06/08/1983 | EP0080652A2 Phototransistor in MOS thin-film technology, method of manufacturing it and method of using it |
06/08/1983 | EP0080620A1 Band gap voltage regulator circuit |
06/08/1983 | EP0080567A2 Semiconducter integrated current source |
06/08/1983 | EP0080560A2 Memory cell comprising a floating gate device |
06/08/1983 | EP0080523A1 Process for producing a monolithic integrated circuit having at least one pair of complementary field-effect transistors and at least one bipolar transistor |
06/08/1983 | EP0022870B1 Semiconductor circuit |
06/07/1983 | US4387389 Semiconductor filter using charge transfer device |
06/07/1983 | US4387386 Microwave controlled field effect switching device |
06/07/1983 | CA1147817A1 Bucket brigaded device |
06/01/1983 | EP0080395A1 Non-volatile latch with dynamic reset |
06/01/1983 | EP0080361A2 Complementary metal-oxide semiconductor integrated circuit device of master slice type |
06/01/1983 | EP0080351A2 Multi-emitter transistors in semiconductor memory devices |
06/01/1983 | EP0080186A2 Semiconductor pressure transducer |
06/01/1983 | EP0080101A2 MOS semiconductor device |
06/01/1983 | EP0080058A2 Intermediate structure for use in the manufacture of semiconductor devices, method of making field effect transistors and transistors |
06/01/1983 | EP0080044A2 Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
05/31/1983 | US4385947 Method for fabricating CMOS in P substrate with single guard ring using local oxidation |
05/31/1983 | CA1147480A1 Semiconductor integrated circuit |
05/31/1983 | CA1147465A1 Floating gate injection field-effect transistor |
05/26/1983 | WO1983001866A1 Merged platinum silicide fuse and schottky diode and method of manufacture thereof |
05/26/1983 | WO1983001865A1 Bandgap control in amorphous semiconductors |
05/25/1983 | EP0079636A2 Electrically erasable programmable read only memory cell |
05/24/1983 | US4385337 Circuit including an MOS transistor whose gate is protected from oxide rupture |
05/24/1983 | US4385308 Non-volatile semiconductor memory device |
05/24/1983 | CA1147059A1 Charge transfer method and device for carrying out the method |
05/18/1983 | EP0078890A2 Method of fabrication of dielectrically isolated CMOS device with an isolated slot |
05/17/1983 | US4384349 High density electrically erasable floating gate dual-injection programmable memory device |
05/17/1983 | US4384301 High performance submicron metal-oxide-semiconductor field effect transistor device structure |
05/17/1983 | US4384299 Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
05/17/1983 | US4384220 MOS Transistor circuit with a power-down function |
05/17/1983 | US4384218 Substrate bias generator |
05/17/1983 | US4383883 Method for fabricating semiconductor device |
05/17/1983 | US4383872 Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead |
05/17/1983 | CA1146675A1 Method of manufacturing an insulated gate field-effect transistor using narrow silicon nitride strip mask |
05/17/1983 | CA1146639A1 Control circuitry using a pull-down transistor for high voltage solid-state switches |
05/11/1983 | WO1983001709A1 Plane transistor structure |
05/11/1983 | EP0078725A2 Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure |
05/11/1983 | EP0078679A2 An electrode connection structure in a semiconductor device |
05/11/1983 | EP0078571A1 Semiconductor device and method of manufacturing the same |
05/11/1983 | EP0078524A2 Discharge lampstarter arrangements |
05/11/1983 | EP0078501A2 Transistor-like semiconductor device and method of producing the same |
05/11/1983 | EP0078452A2 GaAs bipolar integrated circuit devices |
05/11/1983 | EP0078318A1 Alterable threshold semiconductor memory device |
05/10/1983 | US4383326 Clocking signal drive circuit for bucket brigade device |
05/10/1983 | US4383269 Graded bandgap photodetector |
05/10/1983 | US4383268 High-current, high-voltage semiconductor devices having a metallurgical grade substrate |
05/10/1983 | US4382838 Novel silicon crystals and process for their preparation |
05/10/1983 | US4382826 Method of making MIS-field effect transistor having a short channel length |
05/10/1983 | CA1146284A1 Thyristor |
05/04/1983 | EP0078222A2 Integrated circuit bipolar memory cell |
05/04/1983 | EP0078221A2 Polycrystalline silicon diode with metal silicide contact |
05/04/1983 | EP0078220A2 Polycrystalline silicon interconnections for bipolar transistor flip-flop |
05/04/1983 | EP0077930A2 Gate turn-off thyristor |
05/04/1983 | EP0077921A2 Semiconductor device |
05/04/1983 | EP0077874A2 Image scanner |
05/04/1983 | EP0077862A1 Process for characterising the reliability behaviour of bipolar semiconductor devices |
05/04/1983 | EP0077825A1 Method of forming wide bandgap region within multilayer semiconductors. |
05/04/1983 | EP0077813A1 Low resistivity composite metallization for semiconductor devices and method therefor. |
05/03/1983 | US4382195 Monolithically integrable semiconductor circuit |
05/03/1983 | US4381956 Self-aligned buried channel fabrication process |
05/03/1983 | US4381953 Polysilicon sidewalls and vapor deposited silicon oxide barriers for dielectric isolation |
05/03/1983 | US4381952 Method for fabricating a low loss varactor diode |
04/28/1983 | WO1983001538A1 High density cmos devices with conductively interconnected wells and method of fabricating the same |
04/28/1983 | WO1983001536A1 Silicon-glass-silicon capacitive pressure transducer |
04/27/1983 | EP0077737A2 Low capacitance field effect transistor |
04/27/1983 | EP0077706A1 Field effect transistor having a vertical channel |
04/27/1983 | EP0077520A2 Floating gate memory cell wherein writing and erasing is performed by injection of hot charge carriers |
04/27/1983 | EP0077481A2 Planar semiconductor device |
04/27/1983 | EP0077337A1 Mos power transistor |
04/26/1983 | US4381516 Charge-coupled device having a channel and an electrode for changing a transfer direction of charge signals |
04/26/1983 | US4381202 Selective epitaxy by beam energy and devices thereon |
04/26/1983 | US4380866 Method of programming ROM by offset masking of selected gates |
04/26/1983 | US4380865 Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation |
04/26/1983 | US4380863 Method of making double level polysilicon series transistor devices |
04/26/1983 | CA1145482A1 High electron mobility single heterojunction semiconductor device |
04/26/1983 | CA1145421A1 Gain controlled amplifier and pin diode for use therein |
04/25/1983 | EP0031377A4 Floating gate vertical fet. |
04/20/1983 | EP0077135A1 Information holding device comprising a multi-layer Langmuir-Blodgett film |
04/20/1983 | EP0077072A2 High voltage resistance element |
04/20/1983 | EP0077004A2 Semiconductor rectifier diode |
04/20/1983 | EP0077003A2 Color solid-state imager |
04/20/1983 | EP0076967A2 Semiconductor device having a fuse element |
04/20/1983 | EP0076935A2 Integrated semiconductor device and method of fabricating said device |
04/19/1983 | US4380804 Earom cell matrix and logic arrays with common memory gate |
04/19/1983 | US4380803 Read-only/read-write memory |