| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/18/1984 | EP0098737A2 Semiconductor device |
| 01/18/1984 | EP0098652A2 Method of manufacturing an insulated gate field effect device and device manufactured by the method |
| 01/18/1984 | EP0098507A2 Integrated circuit sensor for force or displacement |
| 01/18/1984 | EP0098497A2 Charge carrier injection IGFET |
| 01/18/1984 | EP0098496A1 IGFET with injector zone |
| 01/18/1984 | EP0098383A1 High voltage semiconductor devices |
| 01/17/1984 | US4426687 Semiconductor memory device |
| 01/17/1984 | US4426656 GaAs FETs Having long-term stability |
| 01/17/1984 | US4426548 Multilayer wiring structure |
| 01/17/1984 | US4426546 Functional layer and pair of copper, or copper alloy, electrodes |
| 01/17/1984 | US4426407 Process for producing thin-film transistors on an insulating substrate |
| 01/17/1984 | US4425700 Patterning single crystal silicon layers, forming metal film, annealing to form silicides |
| 01/17/1984 | CA1160760A1 Field-effect capacitance |
| 01/17/1984 | CA1160758A1 Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
| 01/17/1984 | CA1160698A1 Bias current reference circuit |
| 01/11/1984 | EP0098209A1 Switching power transistor having a digitated structure |
| 01/11/1984 | EP0098191A1 Photosensor with anti-blooming control |
| 01/11/1984 | EP0098175A2 Pressure contact type semiconductor device |
| 01/11/1984 | EP0098165A2 Semiconductor memory device |
| 01/11/1984 | EP0098111A2 Vertical IGFET device and method for fabricating same |
| 01/11/1984 | EP0098079A2 Semiconductor memory device with redundancy decoder circuit |
| 01/11/1984 | EP0097983A1 Series/parallel/series shift register memory comprising redundant parallel-connected storage registers, and display apparatus comprising a picture memory thus organized |
| 01/11/1984 | EP0097918A1 Semiconductor device and method of making the same |
| 01/11/1984 | EP0097866A2 Method of fabricating a semiconductor device with a base region having a deep portion |
| 01/11/1984 | EP0097850A1 Magnetic field sensor |
| 01/11/1984 | EP0097837A2 Charge transfer device having improved electrodes |
| 01/11/1984 | EP0097772A2 Structure comprising a monocrystalline substrate supporting a device layer of semiconductor material |
| 01/11/1984 | EP0097767A2 A semiconductor device |
| 01/10/1984 | US4425632 Nonvolatile semiconductor memory device |
| 01/10/1984 | US4425631 Non-volatile programmable integrated semiconductor memory cell |
| 01/10/1984 | US4425573 Metal-semiconductor-field effect transistor (MESFET) with lightly doped drain contact region for higher voltage breakdown |
| 01/10/1984 | US4425572 Thin film transistor |
| 01/10/1984 | US4425379 Metal, silicide strips |
| 01/10/1984 | US4424621 Oxidation, semiconductors, dielectrics |
| 01/10/1984 | CA1160363A1 Method for achieving ideal impurity base profile in a transistor |
| 01/10/1984 | CA1160362A1 Self-aligned buried contact and method of making |
| 01/10/1984 | CA1160361A1 Field effect transistor |
| 01/10/1984 | CA1160360A1 Gain-controlled amplifier using a controllable alternating-current resistance |
| 01/10/1984 | CA1160359A1 Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| 01/10/1984 | CA1160358A1 High voltage semiconductor device having an improved dv/dt capability |
| 01/04/1984 | EP0097595A2 Static RAM cell |
| 01/04/1984 | EP0097533A2 A method of manufacturing a MIS type semiconductor device |
| 01/04/1984 | EP0097442A2 Lateral bi-directional notch fet |
| 01/04/1984 | EP0097375A1 Three-dimensional semiconductor device |
| 01/04/1984 | EP0097339A2 Multiple range capacitive pressure transducer |
| 01/04/1984 | EP0097338A2 Reference voltage generating device |
| 01/04/1984 | EP0097326A1 Semiconductor device having a well structure |
| 01/03/1984 | US4424579 Mask programmable read-only memory stacked above a semiconductor substrate |
| 01/03/1984 | US4424526 Structure for collection of ionization-induced excess minority carriers in a semiconductor substrate and method for the fabrication thereof |
| 01/03/1984 | US4424525 High electron mobility single heterojunction semiconductor devices |
| 01/03/1984 | CA1159967A1 Method for manufacture of integrated semiconductor circuits, in particular ccd-circuits, with self-adjusting, nonoverlapping polysilicon electrodes |
| 01/03/1984 | CA1159953A1 V-mos device with self-aligned multiple electrodes |
| 01/03/1984 | CA1159917A1 Capacitor structures with dual dielectrics |
| 12/28/1983 | EP0097067A1 Mesa-type semiconductor structure having a vertical transistor in anti-parallel association with a diode |
| 12/28/1983 | EP0096773A2 Method of making high dielectric constant insulators and capacitors using same |
| 12/28/1983 | EP0096734A1 Stacked complementary metal oxide semiconductor inverter |
| 12/28/1983 | EP0096686A1 Semiconductor tetrode |
| 12/27/1983 | US4423492 Semiconductor memory device |
| 12/27/1983 | US4423491 Self-refreshing memory cell |
| 12/27/1983 | US4423434 Semiconductor device having two or more semiconductor elements with paired characteristics regularly arranged in a semiconductor substrate |
| 12/27/1983 | US4423433 High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes |
| 12/27/1983 | US4423431 Semiconductor integrated circuit device providing a protection circuit |
| 12/27/1983 | US4423087 Thin film capacitor with a dual bottom electrode structure |
| 12/21/1983 | EP0096651A1 Two-pole overcurrent protection |
| 12/21/1983 | EP0096625A1 Emitter finger structure in a switching transistor and manufacturing process |
| 12/21/1983 | EP0096218A2 Differentially magnetically sensitive diode structure |
| 12/21/1983 | EP0096190A1 Magnetic-field sensor |
| 12/21/1983 | EP0096166A2 Charge coupled device and circuit arrangement for its operation |
| 12/21/1983 | EP0096155A2 Transistor having emitter self-aligned with an extrinsic base contact and method of making it |
| 12/21/1983 | EP0096062A1 Non-volatile semiconductor memory device and manufacturing method therefor. |
| 12/20/1983 | US4422092 High coupling ratio electrically programmable ROM |
| 12/20/1983 | US4422090 Thin film transistors |
| 12/20/1983 | US4422089 Semiconductor device having a reduced surface field strength |
| 12/20/1983 | US4422087 Self-aligned short channel MESFET |
| 12/20/1983 | US4420874 Method of producing an IIL semiconductor device utilizing self-aligned thickened oxide patterns |
| 12/20/1983 | US4420872 Method of manufacturing a semiconductor device |
| 12/20/1983 | US4420871 Method of producing a monolithically integrated two-transistor memory cell in accordance with MOS technology |
| 12/20/1983 | US4420870 Method of controlling channel length by implanting through polycrystalline and single crystalline regions followed by diffusion anneal |
| 12/20/1983 | CA1159158A1 Semiconductor controlled rectifier |
| 12/20/1983 | CA1159157A1 Thyristor |
| 12/13/1983 | US4420823 Semiconductor memory |
| 12/13/1983 | US4420722 Testing semiconductor furnaces for heavy metal contamination |
| 12/13/1983 | US4420497 Applying stress voltage, forming additional dielectrics in damage region |
| 12/13/1983 | US4420379 Method for the formation of polycrystalline silicon layers, and its application in the manufacture of a self-aligned, non planar, MOS transistor |
| 12/13/1983 | US4419812 Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor |
| 12/13/1983 | US4419811 Method of fabricating mesa MOSFET using overhang mask |
| 12/13/1983 | US4419810 Self-aligned field effect transistor process |
| 12/13/1983 | US4419809 Fabrication process of sub-micrometer channel length MOSFETs |
| 12/13/1983 | US4419808 Method of producing redundant ROM cells |
| 12/13/1983 | CA1158782A1 Programmable cell for use in programmable electronic arrays |
| 12/08/1983 | WO1983004343A1 Semiconductor integrated circuit capacitor |
| 12/07/1983 | EP0095755A2 Semiconductor device having a planar structure |
| 12/07/1983 | EP0095658A2 Planar semiconductor device and method of making the same |
| 12/07/1983 | EP0095654A2 Method of manufacturing semiconductor device, including a step of patterning a conductor layer |
| 12/06/1983 | USRE31459 Solid state force transducer and method of making same |
| 12/06/1983 | US4419745 Semiconductor memory device |
| 12/06/1983 | US4419743 Semiconductor memory device |
| 12/06/1983 | US4419685 Semiconductor device |
| 12/06/1983 | US4419683 Thyristor having a controllable emitter short circuit |
| 12/06/1983 | US4419681 Zener diode |