| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/12/1984 | US4453305 Metal-insulator-semiconductor field-effect transistor |
| 06/05/1984 | US4453234 Nonvolatile semiconductor memory device |
| 06/05/1984 | US4453194 Integrated power circuit with current sensing means |
| 06/05/1984 | US4453174 Semiconductor integrated circuit device with non-volatile semiconductor memory cells and means for relieving stress therein |
| 06/05/1984 | US4453172 Field effect transistor with gate insulation of cubic fluoride material |
| 06/05/1984 | US4453127 Determination of true electrical channel length of surface FET |
| 06/05/1984 | US4453090 MOS Field-effect capacitor |
| 06/05/1984 | US4452646 Gallium arsenide substrates doped with selenium |
| 06/05/1984 | US4452645 Vapor deposition; ion bombardment; annealing |
| 06/05/1984 | EP0075007A4 Amorphous semiconductor method and devices. |
| 06/05/1984 | CA1168763A1 Field effect transistors with ultra short gate |
| 06/05/1984 | CA1168716A1 Ccd demodulator circuit |
| 05/30/1984 | EP0109888A2 Subsurface Zener diode |
| 05/30/1984 | EP0109887A1 Hyperfrequency diode structure having its external connections attached to two metallic beam leads |
| 05/30/1984 | EP0109766A1 Semiconductor device with a passivated junction |
| 05/30/1984 | EP0109692A1 Semiconductor device for a MOSFET |
| 05/30/1984 | EP0109576A2 Transistor element |
| 05/29/1984 | US4451905 Electrically erasable programmable read-only memory cell having a single transistor |
| 05/29/1984 | US4451904 Semiconductor memory device |
| 05/29/1984 | US4451903 Method and device for encoding product and programming information in semiconductors |
| 05/29/1984 | US4451844 Polysilicon emitter and base contacts separated by lightly doped poly separator |
| 05/29/1984 | US4451843 Bipolar transistor with a plurality of parallelly connected base-collector junctions formed by plastic deformation of the crystal lattice |
| 05/29/1984 | US4451841 Semiconductor device with multi-layered electrodes |
| 05/29/1984 | US4451744 Monolithic integrated reference voltage source |
| 05/29/1984 | US4451536 Heat distortion-resistant thermoplastic semi-conductive composition |
| 05/29/1984 | US4450620 Fabrication of MOS integrated circuit devices |
| 05/23/1984 | EP0109331A1 Asymmetrical thyristor for high inverse biasing |
| 05/23/1984 | EP0109321A1 Process for passivating the surface of a semiconductor material, and use of the process in the manufacture of semiconductor devices |
| 05/23/1984 | EP0109070A1 MOS type semiconductor device |
| 05/23/1984 | EP0108961A1 Thyristor device protected from an overvoltage |
| 05/23/1984 | EP0108945A1 High voltage semiconductor devices with reduced on-resistance |
| 05/23/1984 | EP0108874A1 Radiation-controllable thyristor |
| 05/22/1984 | US4450470 Semiconductor integrated circuit device |
| 05/22/1984 | US4450469 Mesa type semiconductor device with guard ring |
| 05/22/1984 | US4450468 Gallium arsenide ISL gate with punched-through bipolar driver transistor |
| 05/22/1984 | US4450467 Gate turn-off thyristor with selective anode penetrating shorts |
| 05/22/1984 | US4450462 GaAs Field effect transistor with a non-volatile memory |
| 05/22/1984 | US4450372 Electronic control variable phase shift device comprising a long gate field effect-transistor and a circuit using such a device |
| 05/22/1984 | US4449287 Method of providing a narrow groove or slot in a substrate region, in particular a semiconductor substrate region |
| 05/22/1984 | US4449285 Method for producing a vertical channel transistor |
| 05/22/1984 | US4449284 Method of manufacturing an integrated circuit device having vertical field effect transistors |
| 05/22/1984 | CA1167981A1 Low capacitance self-aligned semiconductor electrode structure and method of fabrication |
| 05/22/1984 | CA1167908A1 High powered over-voltage protection |
| 05/16/1984 | EP0108681A2 Bit erasable electrically erasable programmable read only memory |
| 05/16/1984 | EP0108650A2 Programmable MOS transistor |
| 05/16/1984 | EP0108446A2 Polysilicon - diode - loaded memory cell |
| 05/16/1984 | EP0108390A1 Semiconductor memory |
| 05/16/1984 | EP0108273A2 A gate controlled semiconductor device |
| 05/16/1984 | EP0108251A2 A semiconductor device comprising an electrode and/or an interconnection |
| 05/16/1984 | EP0108204A1 Method for diffusing impurities and semiconductor devices fabricated by said method |
| 05/16/1984 | EP0108065A1 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained. |
| 05/15/1984 | US4449205 Dynamic RAM with non-volatile back-up storage and method of operation thereof |
| 05/15/1984 | US4449158 Input protection circuit for MIS transistor |
| 05/15/1984 | US4449141 Variable capacitor |
| 05/15/1984 | US4449140 Semi-conductor barrier switching devices |
| 05/15/1984 | US4449011 Method and apparatus for encapsulation of chemically sensitive field effect device |
| 05/09/1984 | EP0107851A1 Manufacture of semiconductor devices by the planar method |
| 05/09/1984 | EP0107773A1 Thyristor with turn-off capability |
| 05/08/1984 | US4447823 SOS p--n Junction device with a thick oxide wiring insulation layer |
| 05/08/1984 | US4447291 Ion milling a hole, then wet etching |
| 05/08/1984 | US4447290 Using fluoro, acyclic hydrocarbon to provide better end-point detection |
| 05/08/1984 | US4446613 Integrated circuit resistor and method of fabrication |
| 05/02/1984 | EP0107437A1 Method of producing a semiconductor device comprising a bipolar transistor and a Schottky barrier diode |
| 05/02/1984 | EP0107290A2 Nonvolatile semiconductor memory device with electrically selectable, erasable and programmable function |
| 05/02/1984 | EP0107252A1 Semiconductor device |
| 05/02/1984 | EP0107039A2 Resonant transmission semiconductor device and circuit including such a device |
| 05/01/1984 | USRE31580 Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide |
| 05/01/1984 | US4446485 Semiconductor circuit with clock-controlled charge displacement devices |
| 05/01/1984 | US4446478 Assembly in a single case of a main power-switching semiconductor component and a destorage diode |
| 05/01/1984 | US4446476 Refractory metal silicide layer beneath field isolation region and in contact with doped electroconductivity layer |
| 05/01/1984 | US4446473 Serpentine charge transfer device |
| 05/01/1984 | US4445383 Multiple range capacitive pressure transducer |
| 05/01/1984 | US4445268 Method of manufacturing a semiconductor integrated circuit BI-MOS device |
| 05/01/1984 | US4445267 MOSFET Structure and process to form micrometer long source/drain spacing |
| 05/01/1984 | CA1166765A1 Method for making low barrier schottky devices by the electron beam evaporation of reactive metals |
| 05/01/1984 | CA1166764A1 Semiconductor ohmic contact |
| 05/01/1984 | CA1166762A1 Method for forming recessed isolated regions |
| 05/01/1984 | CA1166760A1 Self-aligned metal process for integrated circuit metallization |
| 04/27/1984 | EP0034166A4 Semiconductor embedded layer technology. |
| 04/27/1984 | EP0031367A4 Method for forming voltage-invariant capacitors for mos type integrated circuit device. |
| 04/25/1984 | EP0106724A2 Ballistic heterojunction bipolar transistor |
| 04/25/1984 | EP0106658A1 Temperature stable self-protected thyristor and method of producing |
| 04/25/1984 | EP0106617A2 Method for fabricating an EEPROM |
| 04/25/1984 | EP0106458A2 Method of manufacturing a semiconductor device including a MIS field effect transistor |
| 04/25/1984 | EP0106417A2 Integrated circuit comprising an input protection device |
| 04/25/1984 | EP0106413A2 Semiconductor structure having a voltage level shifter |
| 04/25/1984 | EP0106254A2 Transistor with an adjustable energy barrier, and its application |
| 04/25/1984 | EP0106195A2 Monolithic integrated circuit device |
| 04/25/1984 | EP0106174A2 Manufacture of a Schottky FET |
| 04/25/1984 | EP0106147A1 Thyristor with turn-off capability |
| 04/25/1984 | EP0106072A2 High voltage Schottky barrier diode |
| 04/25/1984 | EP0106059A1 Semiconductor switch with a gate turn-off thyristor |
| 04/25/1984 | EP0106044A2 Space charge modulating semiconductor device and circuit comprising it |
| 04/25/1984 | EP0105999A1 Capacitor and method for its fabrication |
| 04/24/1984 | US4445134 Conductivity WSi2 films by Pt preanneal layering |
| 04/24/1984 | US4445133 Semiconductor device |
| 04/24/1984 | US4444644 PH Electrode |
| 04/24/1984 | US4443933 Utilizing multi-layer mask to define isolation and device zones in a semiconductor substrate |
| 04/24/1984 | US4443932 Self-aligned oxide isolated process and device |
| 04/24/1984 | US4443931 Method of fabricating a semiconductor device with a base region having a deep portion |