Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1983
10/18/1983US4410375 Method for fabricating a semiconductor device
10/18/1983US4409980 Gas sensor with pH-sensitive FET transducer
10/18/1983US4409727 Methods of making narrow channel field effect transistors
10/18/1983US4409724 Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
10/18/1983US4409723 Method of forming non-volatile EPROM and EEPROM with increased efficiency
10/18/1983US4409722 Borderless diffusion contact process and structure
10/12/1983EP0091342A1 Process for manufacturing a planar field-effect transistor having a supplementary buried gate
10/12/1983EP0091256A2 CMOS device
10/12/1983EP0091094A2 Insulated gate rectifier with improved current-carrying capability
10/12/1983EP0091079A2 Power MOSFET
10/12/1983EP0090963A2 Method for making polycrystalline silicon film resistors
10/12/1983EP0090940A2 Method of forming emitter and intrinsic base regions of a bipolar transistor
10/12/1983EP0006958B1 Complementary mis-semiconductor integrated circuits
10/11/1983US4409676 Method and means for diagnostic testing of CCD memories
10/11/1983US4409608 Recessed interdigitated integrated capacitor
10/11/1983US4409607 Normally-on enhancement mode MOSFET with negative threshold gating
10/11/1983US4409606 High breakdown voltage semiconductor device
10/11/1983US4409605 Amorphous semiconductors equivalent to crystalline semiconductors
10/11/1983US4408388 Method for manufacturing a bipolar integrated circuit device with a self-alignment base contact
10/11/1983US4408387 Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
10/11/1983US4408384 Method of manufacturing an insulated-gate field-effect transistor
10/11/1983CA1155239A1 Diode and rom or eeprom device using same
10/11/1983CA1155237A1 Complementary field-effect transistor integrated circuit device
10/11/1983CA1155236A1 Transistor having improved turn-off time and second breakdown characteristics
10/11/1983CA1155187A1 Control circuitry using two branch circuits for high- voltage solid-state switches
10/05/1983EP0090738A2 Semiconductor device
10/05/1983EP0090722A1 Fast diode
10/05/1983EP0090661A2 A thin film field-effect transistor and a process for producing the same
10/05/1983EP0090651A2 Semiconductor chip assembly including a thermal radiator plate
10/05/1983EP0090591A2 Semiconductor memory device
10/05/1983EP0090520A2 A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate
10/05/1983EP0090447A2 Masking process for semiconductor device manufacture
10/05/1983EP0090318A2 Process for manufacturing integrated circuits comprising MOS field-effect transistors using silicon gate technology having silicide layers on diffusion regions as low-ohmic conductors
10/05/1983EP0090169A2 Triac controlled by field effect
10/05/1983EP0090161A2 Method of producing dynamic random access memory cells (RAM) according to the double polysilicon gate technology
10/05/1983EP0090116A2 CMIS semiconductor device with two power supplies
10/05/1983EP0090111A2 Method of manufacturing a semiconductor device comprising a dielectric isolation region
10/04/1983US4408330 Field effect semiconductor laser, method of modulation thereof
10/04/1983US4408216 Sintering palladium or platinum with silicon, removal of silicides, then high work function metal
10/04/1983US4407059 Method of producing semiconductor device
10/04/1983US4407058 Method of making dense vertical FET's
10/04/1983CA1154879A1 Semiconductor controlled rectifier
10/04/1983CA1154834A1 Bias-voltage generator
09/1983
09/28/1983EP0089527A2 Monolithic integrated Darlington circuit
09/28/1983EP0089504A2 Method for making an integrated circuit with multiple base width transistor structures
09/28/1983EP0089503A2 Method for making a high performance bipolar transistor in an integrated circuit
09/27/1983US4407005 N-Channel JFET device having a buried channel region, and method for making same
09/27/1983US4407004 Self-aligned MESFET having reduced series resistance
09/27/1983US4406997 Method and means for minimizing the effect of short circuits in flat panel displays
09/27/1983US4406052 Non-epitaxial static induction transistor processing
09/27/1983US4406051 Method for manufacturing a semiconductor device
09/27/1983US4406049 Nitriding, oxidation
09/27/1983CA1154543A1 Mesh gate v-mos power fet
09/27/1983CA1154502A1 Semiconductor variable capacitance pressure transducer
09/21/1983EP0089265A2 Process of ion implant masking in CMOS manufacture and resultant structure
09/21/1983EP0089091A2 Voltage translator
09/21/1983EP0088967A2 Laser treatment of thyristor to provide overvoltage self-protection
09/21/1983EP0088922A2 A method of forming electrodes and wiring strips on a semiconductor device
09/21/1983EP0088815A1 Electrically erasable memory matrix (EEPROM)
09/20/1983US4405995 Semiconductor memory drive
09/20/1983US4405970 Silicon-glass-silicon capacitive pressure transducer
09/20/1983US4405933 Protective integrated circuit device utilizing back-to-back zener diodes
09/20/1983US4405932 Punch through reference diode
09/20/1983US4404732 Self-aligned extended epitaxy mesfet fabrication process
09/20/1983US4404731 Method of forming a thin film transistor
09/20/1983CA1154177A1 Amorphous silicon mis device
09/20/1983CA1154173A1 Semiconductor device
09/20/1983CA1154172A1 Semiconductor switching device
09/15/1983WO1983003167A1 An electrically alterable, nonvolatile floating gate memory device
09/15/1983WO1983003166A1 An electrically alterable, nonvolatile floating-gate memory device
09/15/1983WO1983003165A1 Polymeric films
09/14/1983EP0088451A1 Semiconductor memory
09/14/1983EP0088399A2 Voltage-stable MOS transistor for very high density integrated circuits
09/14/1983EP0088179A2 Transient absorption semiconductor device
09/13/1983US4404581 ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells
09/13/1983US4404580 Light activated semiconductor device
09/13/1983US4404579 Semiconductor device having reduced capacitance and method of fabrication thereof
09/13/1983US4404578 Structure of thin film transistors
09/13/1983US4404577 Electrically alterable read only memory cell
09/13/1983US4404576 All implanted MOS transistor
09/13/1983US4404575 Semiconductor device
09/13/1983US4404539 Semiconductor strain gauge
09/13/1983US4404525 Switched capacitor gain stage with offset and switch feedthrough cancellation scheme
09/13/1983US4404048 Inhibiting diffusion of p-type dopants using using n-type dopants with smaller diffusion coefficient
09/13/1983US4403400 Process for producing a semiconductor device
09/13/1983US4403396 Semiconductor device design and process
09/13/1983US4403394 Formation of bit lines for ram device
09/13/1983US4403392 Method of manufacturing a semiconductor device
09/13/1983CA1153833A1 Method for manufacturing variable capacitance pressure transducers and an intermediate article of manufacture produced thereby
09/13/1983CA1153831A1 Field effect transistor with a short channel lenght
09/13/1983CA1153830A1 Polysilicon-base self-aligned bipolar transistor process and structure
09/13/1983CA1153829A1 Semiconductor device having a function of preventing a soft error due to alpha particles
09/13/1983CA1153826A1 Differentially modulated avalanche area magnetically sensitive transistor
09/13/1983CA1153825A1 Semiconductor device
09/07/1983EP0087841A1 Use of a dual gate field-effect transistor with an interposed conductor for the rejection of a frequency band
09/07/1983EP0087829A1 Semiconductor device and method of manufacturing it
09/07/1983EP0087583A1 Integrated power circuit with current sensing means
09/07/1983EP0087573A2 Method of making complementary field effect transistors
09/07/1983EP0087462A1 Process for manufacturing an integrated circuit structure.
09/06/1983US4403307 Semiconductor memory device
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