| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/07/1984 | EP0102075A2 Semiconductor device with a multilayer structure |
| 03/07/1984 | EP0102035A2 Electrode material for semi-conductor devices |
| 03/07/1984 | EP0101798A2 Non-volatile memory and switching device |
| 03/07/1984 | EP0101739A1 Heterojunction transistor and method of fabricating the same |
| 03/06/1984 | US4435785 Unipolar voltage non-volatile JRAM cell |
| 03/06/1984 | US4435730 Low noise CCD output |
| 03/06/1984 | US4435225 Method of forming self-aligned lateral bipolar transistor |
| 03/06/1984 | US4435224 Process for preparing homogeneous layers of composition Hg1-x Cdx |
| 03/06/1984 | US4434543 Undercutting masking layer and oxidation of dopes |
| 03/06/1984 | CA1188008A2 Thin film transistor |
| 03/06/1984 | CA1163378A1 Underpass in a semiconductor device |
| 03/06/1984 | CA1163377A2 Thin film transistor |
| 03/06/1984 | CA1163369A1 Charge-coupled devices |
| 03/01/1984 | WO1984000859A1 Acoustic charge transport device and method |
| 03/01/1984 | WO1984000852A1 Non-volatile semiconductor memory device |
| 03/01/1984 | WO1984000850A1 Integrated circuit contact fabrication process |
| 03/01/1984 | WO1984000849A1 Process for forming an integrated circuit capacitor |
| 03/01/1984 | EP0067206A4 Method for fabricating complementary semiconductor devices. |
| 02/29/1984 | EP0101629A1 Static electric energy conversion unit with semiconductors |
| 02/29/1984 | EP0101608A2 Insulated gate type field effect transistor having a silicon gate electrode |
| 02/28/1984 | US4434478 Programming floating gate devices |
| 02/28/1984 | US4434433 Semiconductor memory cell device |
| 02/28/1984 | US4434379 Inverter using low-threshold-voltage field-effect transistors and a switching diode, formed as an integrated circuit |
| 02/28/1984 | US4434013 Method of making a self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
| 02/28/1984 | US4433469 Method of forming a self aligned aluminum polycrystalline silicon line |
| 02/28/1984 | US4433468 Method for making semiconductor device having improved thermal stress characteristics |
| 02/28/1984 | CA1163020A1 High voltage semiconductor device having improvements to the dv/dt capability and plasma spreading |
| 02/22/1984 | EP0101120A1 Semiconductor device comprising a field-effect transistor composed of a plurality of partial transistors mounted in parallel |
| 02/22/1984 | EP0101107A2 Method of testing a semiconductor memory array |
| 02/22/1984 | EP0101000A2 Integrated semiconductor circuit, comprising bipolar and MOS transistors on the same chip, and method of making the same |
| 02/22/1984 | EP0100999A2 Integrated semiconductor circuit comprising bipolar elements, and schottkydiodes so as method of producing the same |
| 02/22/1984 | EP0100897A2 Method for contacting a pn junction region |
| 02/21/1984 | US4433283 Band gap regulator circuit |
| 02/21/1984 | US4432133 Method of producing a field effect transistor |
| 02/21/1984 | US4432132 Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features |
| 02/21/1984 | CA1162599A1 Four terminal pulse supressor |
| 02/16/1984 | WO1984000641A1 Thyristor and method of fabrication thereof |
| 02/15/1984 | EP0100677A2 Semiconductor devices including lateral-type transistors |
| 02/15/1984 | EP0100572A2 Electrically erasable PROM-cell |
| 02/15/1984 | EP0100571A2 Low resistance buried power bus for integrated circuits |
| 02/15/1984 | EP0100529A1 High speed field-effect transistor employing heterojunction |
| 02/15/1984 | EP0100454A1 Semiconductor device having a conductive layer consisting of a high-melting point metal silicide and a method for manufacturing such a semiconductor device |
| 02/15/1984 | EP0100396A1 Determination of true electrical channel length of surface FET |
| 02/14/1984 | US4432075 Electrically programmable non-volatile memory |
| 02/14/1984 | US4432074 Process for the operation of a CID arrangement |
| 02/14/1984 | US4432072 Non-volatile dynamic RAM cell |
| 02/14/1984 | US4432035 Oxidation of transition metal-silicon alloy |
| 02/14/1984 | US4432008 Gold-doped IC resistor region |
| 02/14/1984 | US4432006 Semiconductor memory device |
| 02/14/1984 | US4431900 Selectively heating |
| 02/14/1984 | US4431460 Two-step annealing |
| 02/14/1984 | US4431305 High density DC stable memory cell |
| 02/14/1984 | US4430793 Method of manufacturing a semiconductor device utilizing selective introduction of a dopant thru a deposited semiconductor contact layer |
| 02/14/1984 | US4430792 Minimal mask process for manufacturing insulated-gate semiconductor devices with integral shorts |
| 02/14/1984 | US4430791 Sub-micrometer channel length field effect transistor process |
| 02/14/1984 | CA1162327A2 Diode and eeprom device using same |
| 02/14/1984 | CA1162325A1 Thyristor having a controllable emitter short circuit |
| 02/14/1984 | CA1162283A1 Semiconductor devices having improved low-resistance contacts to p-type cdte, and method of preparation |
| 02/09/1984 | EP0077813A4 Low resistivity composite metallization for semiconductor devices and method therefor. |
| 02/08/1984 | EP0100251A1 Process for reducing a layer compound on a substrate and application of the process to the manufacture of a field-effect semiconductor structure |
| 02/08/1984 | EP0100213A1 Gallium arsenide VLSI chip |
| 02/08/1984 | EP0100136A1 Thyristor with a self-protection function for breakover turn-on-failure |
| 02/08/1984 | EP0099984A1 Electrically conductive pyrrole copolymers and process for their preparation |
| 02/08/1984 | EP0099931A1 Shift register |
| 02/08/1984 | EP0099897A1 Darlington transistor circuit. |
| 02/07/1984 | US4430672 Photosensitive device read by charge transfer |
| 02/07/1984 | US4430663 Prevention of surface channels in silicon semiconductor devices |
| 02/07/1984 | US4430623 Monolithic amplifier comprising a power division and recombination system grouping a plurality of transistors |
| 02/07/1984 | US4430583 Apparatus for increasing the speed of a circuit having a string of IGFETs |
| 02/07/1984 | US4430581 Semiconductor substrate bias circuit |
| 02/07/1984 | US4429453 Process of manufacture of a high power semiconductor device |
| 02/07/1984 | US4429452 Semiconductor |
| 02/07/1984 | EP0063139A4 Method of making a planar iii-v bipolar transistor by selective ion implantation and a device made therewith. |
| 02/07/1984 | CA1161970A2 Diode and rom device using same |
| 02/07/1984 | CA1161968A1 Protection circuit for integrated circuit devices |
| 02/07/1984 | CA1161967A1 Process for the preparation of large area tft arrays |
| 02/07/1984 | CA1161964A1 Quasi-symmetrical bipolar transistor structure |
| 02/07/1984 | CA1161959A1 Mnos storage cell |
| 02/07/1984 | CA1161958A1 Low resistance line |
| 02/01/1984 | EP0099787A1 Process for optimizing the doping of a MOS transistor |
| 02/01/1984 | EP0099603A1 Semiconductor device and method of manufacturing same |
| 02/01/1984 | EP0099583A2 Charge-coupled device output circuit |
| 01/31/1984 | US4429324 Zener diode and method of making the same |
| 01/31/1984 | US4429237 High voltage on chip FET driver |
| 01/31/1984 | US4428111 Microwave transistor |
| 01/31/1984 | CA1161572A2 Optically controllable static induction thyristor device |
| 01/31/1984 | CA1161548A1 Signal pick-up circuit |
| 01/25/1984 | EP0099270A2 Method for the formation of buried gates of a semiconductor device |
| 01/25/1984 | EP0099175A2 Split gate EFET |
| 01/25/1984 | EP0098998A2 Light-activated thyristor needing low light power and having a high critical voltage rise rate |
| 01/25/1984 | EP0098997A2 Light-activatable thyristor having a low lighting power requirement |
| 01/25/1984 | EP0098988A1 Electrically conductive copolymers of pyrroles, and process for their preparation |
| 01/25/1984 | EP0098941A1 Method of making ohmic contacts regions and device manufactured by the method |
| 01/25/1984 | EP0098834A1 Planar semiconductor device. |
| 01/24/1984 | USRE31506 Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique |
| 01/24/1984 | US4428071 Integrated circuit having non-volatile programmable semiconductor memories |
| 01/24/1984 | US4427457 Ion implantation of dopants into parallel plates in substrates |
| 01/24/1984 | US4426767 Selective epitaxial etch planar processing for gallium arsenide semiconductors |
| 01/24/1984 | US4426766 Method of fabricating high density high breakdown voltage CMOS devices |
| 01/24/1984 | US4426764 Semiconductor memory device with peripheral circuits |