Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1983
09/06/1983US4403241 Method for etching III-V semiconductors and devices made by this method
09/06/1983US4403237 Charge transfer device having a bent charge transfer channel
09/06/1983US4402762 Method of making highly stable modified amorphous silicon and germanium films
09/06/1983US4402761 Method of making self-aligned gate MOS device having small channel lengths
09/06/1983US4402127 Method of manufacturing a logic circuit including at least one field-effect transistor structure of the normally-off type and at least one saturable resistor
09/06/1983US4402126 Method for fabrication of a non-volatile JRAM cell
09/06/1983CA1153480A1 Thin film transistor
09/06/1983CA1153479A1 Semiconductor devices controlled by depletion regions
09/06/1983CA1153478A1 Gate turn-off thyristor
09/01/1983WO1983003032A1 Semiconductor device and method of fabricating the same
09/01/1983WO1983003029A1 Diffusion of shallow regions
08/1983
08/31/1983EP0087264A2 Force sensors
08/31/1983EP0087251A2 Process for manufacturing a buried gate field effect transistor
08/31/1983EP0087155A2 Means for preventing the breakdown of an insulation layer in semiconductor devices
08/31/1983EP0087007A2 Dynamic RAM with non-volatile back-up storage and method of operation thereof
08/30/1983US4402014 Circuit arrangement for discharging a capacity
08/30/1983US4402004 High current press pack semiconductor device having a mesa structure
08/30/1983US4402002 Gate can be silicon-doped aluminum
08/30/1983US4402001 Semiconductor element capable of withstanding high voltage
08/30/1983US4400869 Process for producing high temperature pressure transducers and semiconductors
08/30/1983US4400866 Self-aligned schottky metal semi-conductor field effect transistor where oxidation rate is determined by doping level of polysilicon
08/30/1983US4400865 Self-aligned metal process for integrated circuit metallization
08/30/1983CA1153129A1 Method of fabricating self-aligned lateral bipolar transistor
08/24/1983EP0086462A2 Pressure sensor employing semiconductor strain gauge
08/24/1983EP0086372A2 Tunneling gate semiconductor device
08/24/1983EP0086210A1 Diode for monolithic integrated circuit.
08/24/1983EP0086209A1 A planar transistor with an integrated overvoltage guard
08/23/1983US4400797 Read only memory using static induction transistor
08/23/1983US4400716 Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate
08/23/1983US4400715 Thin film semiconductor device and method for manufacture
08/23/1983US4400710 Semiconductor device
08/23/1983US4400681 Semiconductor pressure sensor with slanted resistors
08/23/1983US4400221 Doping with sodium, potassium or, lithium
08/23/1983US4399605 Method of making dense complementary transistors
08/23/1983CA1152647A1 Non-destructive read-out of a signal from a ccd shift register
08/23/1983CA1152620A1 Equilibrium growth technique for preparing pbs.sub.xse in1-x xx epilayers
08/18/1983WO1983002852A1 Field-effect controlled bi-directional lateral thyristor
08/17/1983EP0086010A1 Semiconductor device having a reduced surface field strength
08/17/1983EP0085988A2 Semiconductor memory and method for fabricating the same
08/17/1983EP0085916A2 Method of fabricating field effect transistors
08/17/1983EP0085777A2 Fabrication of devices including selective formation of titanium disilicide by direct reaction
08/16/1983US4399523 Non-volatile, electrically erasable and reprogrammable memory element
08/16/1983US4399522 Non-volatile static RAM cell with enhanced conduction insulators
08/16/1983US4399450 ROM With poly-Si to mono-Si diodes
08/16/1983US4399449 Composite metal and polysilicon field plate structure for high voltage semiconductor devices
08/16/1983US4398964 Method of forming ion implants self-aligned with a cut
08/16/1983US4398963 Method for making non-alloyed heterojunction ohmic contacts
08/16/1983US4398962 Method of controlling base contact regions by forming a blocking layer contiguous to a doped poly-si emitter source
08/16/1983US4398833 Electronic timepiece
08/16/1983US4398344 Depositing platinum encapsulated in palladium on silicon wafer, sintering
08/16/1983US4398343 Method of making semi-amorphous semiconductor device
08/16/1983US4398341 Depositing layers of metals and silicon, annealing to form silicides
08/16/1983US4398340 Method for making thin film field effect transistors
08/16/1983US4398339 Fabrication method for high power MOS device
08/16/1983US4398338 Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
08/16/1983US4398335 Multilayer metal silicide interconnections for integrated circuits
08/16/1983CA1152229A1 Silicon on sapphire laser process
08/16/1983CA1152228A1 Barrier-free, low-resistant electrical contact on iii- v semiconductor material
08/16/1983CA1152227A1 Process of reducing density of fast surface states in mos devices
08/16/1983CA1152213A1 Charge-coupled device
08/10/1983EP0085624A2 Schottky shunt integrated injection logic circuit
08/10/1983EP0085607A2 Process for the simultaneous production of hyperfrequency diodes having an incorported encapsulation and diodes made by said process
08/10/1983EP0085550A2 Electrically-programmable and electrically-erasable MOS memory device
08/10/1983EP0085434A2 Semiconductor devices and method for making the same
08/10/1983EP0085395A2 High density memory cell
08/10/1983EP0085168A2 High-voltage CMOS process
08/10/1983EP0085123A1 Isolated gate field effect transistor circuit for sensing the voltage of a knot
08/09/1983US4398301 Multiple preamplifiers with intervening overflow cell for charge coupled imaging devices
08/09/1983US4398267 Semiconductor memory device
08/09/1983US4398205 Gate turn-off device with high turn-off gain
08/09/1983US4397695 Method for stabilizing the current gain of NPN -silicon transistors
08/09/1983US4397079 Process for improving the yield of integrated devices including Schottky barrier diodes
08/09/1983US4397077 Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers
08/09/1983US4397076 Method for making low leakage polycrystalline silicon-to-substrate contacts
08/09/1983US4397075 Vertical capacitor
08/09/1983CA1151774A2 Field effect semiconductor device
08/04/1983WO1983002678A1 Shift register
08/03/1983EP0084985A2 Laser induced flow Ge-O based materials
08/03/1983EP0084558A1 Monolithically merged field effect transistor and bipolar junction transistor.
08/02/1983US4396932 Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
08/02/1983US4396931 Tunnel emitter upper valley transistor
08/02/1983US4396930 Compact MOSFET device with reduced plurality of wire contacts
08/02/1983US4395812 Forming an integrated circuit
08/02/1983CA1151295A1 Dual resistivity mos devices and method of fabrication
07/1983
07/27/1983EP0084465A2 Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
07/27/1983EP0084399A2 Self-aligned oxide isolated process and device
07/27/1983EP0084393A2 Semiconductor device of the heterojunction transistor type
07/27/1983EP0084178A2 Resistive element formed in a semiconductor substrate
07/26/1983US4395727 Barrier-free, low-resistant electrical contact on III-V semiconductor material
07/26/1983US4395726 Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
07/26/1983US4395725 Segmented channel field effect transistors
07/26/1983US4395724 Nonvolatile semiconductor memory device
07/26/1983US4395723 Floating substrate dynamic RAM cell with lower punch-through means
07/26/1983US4395722 Heterojunction transistor
07/26/1983US4395433 Method for manufacturing a semiconductor device having regions of different thermal conductivity
07/26/1983EP0037401A4 OHMIC CONTACT TO P-TYPE InP OR InGaAsP.
07/26/1983CA1150855A1 Method of manufacturing a semiconductor device
07/26/1983CA1150854A1 Junction field effect transistor
07/26/1983CA1150853A1 Insulated-gate field-effect transistor and method of manufacturing same
07/26/1983CA1150852A1 Series-connected two-terminal semiconductor devices and their fabrication
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