Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1984
10/23/1984CA1176744A1 Semiconductor stress sensing apparatus
10/23/1984CA1176717A1 Output stage for a monolithically integrated charge transfer device
10/17/1984EP0122047A1 A multi-layered amorphous semiconductor material
10/17/1984EP0122004A2 Improved bipolar transistor construction
10/17/1984EP0121997A1 Schottky gate field effect transistor and method for producing it
10/17/1984EP0121798A2 Dynamic type semiconductor memory device
10/17/1984EP0121605A2 Method of producing a multi-layer contact metallisation on a silicon semiconductor component
10/16/1984US4477883 Electrically erasable programmable read only memory
10/16/1984US4477825 Floating gate storage device
10/16/1984US4477688 Photovoltaic cells employing zinc phosphide
10/16/1984US4477310 Using titanium or tantalum to form silicides
10/16/1984US4476622 Recessed gate static induction transistor fabrication
10/16/1984CA1176372A1 Substrate bias generator
10/16/1984CA1176142A1 Method of manufacturing a semiconductor device
10/11/1984WO1984003997A1 Self-aligned ldmos and method
10/11/1984WO1984003996A1 Semiconductor device and method of manufacture thereof
10/11/1984WO1984003995A1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers
10/11/1984WO1984003992A1 Thin-film integrated device
10/11/1984EP0084558A4 Monolithically merged field effect transistor and bipolar junction transistor.
10/10/1984EP0121402A2 A semiconductor component and method of manufacture
10/10/1984EP0121351A1 Method of manufacturing MOS type semiconductor devices
10/10/1984EP0121198A2 Semiconductor device having a variable impedance
10/10/1984EP0121096A2 Semiconductor contact structure
10/10/1984EP0121068A1 Semiconductor power device and method of manufacture
10/10/1984EP0120918A1 An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof.
10/09/1984US4476545 Dynamic semiconductor memory cell with random access and method for its production
10/09/1984US4476483 Semiconductor device having a doped amorphous silicon adhesive layer
10/09/1984US4476481 Low-loss P-i-n diode
10/09/1984US4476480 High withstand voltage structure of a semiconductor integrated circuit
10/09/1984US4475279 Method of making a monolithic integrated circuit comprising at least one pair of complementary field-effect transistors and at least one bipolar transistor
10/09/1984CA1175953A1 Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
10/09/1984CA1175952A1 Thyristor
10/09/1984CA1175951A1 Depthwise-oriented integrated circuit capacitors and method of making
10/03/1984EP0120303A2 Semiconductor memory device having a floating gate electrode
10/02/1984US4475119 Integrated circuit power transmission array
10/02/1984US4475117 Linear pn junction capacitance diode
10/02/1984US4474624 Process for forming self-aligned complementary source/drain regions for MOS transistors
10/02/1984US4474623 Protective layer
10/02/1984US4473941 Method of fabricating zener diodes
10/02/1984US4473940 Method of producing a semiconductor device
10/02/1984US4473939 Gallum-arsenic field effect transistor
10/02/1984CA1175583A1 Silicon thin film and method of producing the same
10/02/1984CA1175478A1 Method of rectifying alternating current and apparatus for performing this method
09/1984
09/26/1984EP0119729A1 Semiconductor memory device
09/26/1984EP0119400A1 A vertical-type MOSFET and method of fabricating the same
09/26/1984EP0119260A1 Cmos integrated circuit with guard bands for latch-up protection
09/25/1984US4473778 Discharge lamp starting device
09/25/1984US4473762 Semiconductor integrated circuit with a response time compensated with respect to temperature
09/25/1984US4472874 Method of forming planar isolation regions having field inversion regions
09/25/1984US4472873 Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
09/25/1984US4472872 Method of fabricating a Schottky gate field effect transistor
09/25/1984CA1175158A1 Planar thin film transistors, transistor arrays, and a method of making the same
09/19/1984EP0119089A2 GaAs semiconductor device and a method of manufacturing it
09/19/1984EP0118935A1 Semiconductor device comprising non-volatile storage transistors
09/19/1984EP0118921A2 MOSFET with high density of integration and low on resistance
09/19/1984EP0118878A2 Semiconductor memory device
09/19/1984EP0118785A1 Two-pole overcurrent protection
09/19/1984EP0118709A2 Process for manufacturing MOS transistors having planar source and drain regions, short channel length and a self-aligned contact level comprising a metallic silicide
09/19/1984EP0118605A2 Feedback circuit for a semiconductor active element sensor
09/19/1984EP0118513A1 Process for forming a cmos structure.
09/19/1984EP0118511A1 Integrated circuit contact fabrication process.
09/19/1984EP0118506A1 Non-volatile semiconductor memory device
09/18/1984US4472760 Capacitor
09/18/1984US4472729 Recrystallized three dimensional integrated circuit
09/18/1984US4472727 Carrier freezeout field-effect device
09/18/1984US4472642 Power semiconductor switching device
09/18/1984CA1174772A1 Polycrystalline silicon schottky diode array
09/13/1984WO1984003588A1 Integrated self-firing thyristor structure for on/off switching of high currents, and control circuit thereof
09/13/1984WO1984003587A1 Inverted polycide sandwich structure and method
09/12/1984EP0118336A1 High voltage MOS/bipolar power transistor apparatus
09/12/1984EP0118102A2 Method for manufacturing a semiconductor device
09/12/1984EP0118007A2 Electrical circuit comprising a hybrid power switching semiconductor device including an SCR structure
09/12/1984EP0117957A2 Solid-state device having a plurality of optical functions
09/12/1984EP0117874A1 Semiconductor photoelectric converter
09/11/1984US4471471 Non-volatile RAM device
09/11/1984US4471376 Amorphous devices and interconnect system and method of fabrication
09/11/1984US4471374 Single polycrystalline silicon memory cell
09/11/1984US4471373 Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS
09/11/1984US4471372 FET Controlled Triac
09/11/1984US4471369 Robotic pressure imagers
09/11/1984US4471367 MESFET Using a shallow junction gate structure on GaInAs
09/11/1984US4471366 Gallium arsenide, aluminum gallium arsenide, n-junctions
09/11/1984US4470852 Dielectrics, wafers, multilayer
09/11/1984US4470191 Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
09/11/1984US4470189 Process for making polycide structures
09/11/1984CA1174285A1 Laser induced flow of integrated circuit structure materials
09/05/1984EP0117810A1 Device for checking mobile electric charges in an integrated circuit in MOS technology
09/05/1984EP0117566A2 Semiconductor device having a coupling capacitor
09/05/1984EP0117339A1 Stacked MOS transistor
09/04/1984US4470061 Integrated injection logic
09/04/1984US4470060 Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
09/04/1984US4470059 Integrated circuits
09/04/1984US4470024 Integrated circuit for a controllable frequency oscillator
09/04/1984US4469568 Anodizing, selective etching
09/04/1984US4469535 Method of fabricating semiconductor integrated circuit devices
09/04/1984US4468856 Method for forming an ohmic contact to a semiconductor substrate
09/04/1984US4468855 Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings
09/04/1984US4468852 Process for making CMOS field-effect transistors with self-aligned guard rings utilizing special masking and ion implantation
09/04/1984US4468851 Expose of coating of gallium-indium-arsenide to stream of phosphine and hydrogen on indium-phosphorus semiconduct substrate
08/1984
08/30/1984WO1984003391A1 Fabrication of mos integrated circuit devices