Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1984
12/04/1984US4486893 Capacitive supplement multiplier apparatus
12/04/1984US4486769 Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
12/04/1984US4486768 Amplified gate turn-off thyristor
12/04/1984US4486767 Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same
12/04/1984US4486766 Schottky barrier field effect transistors
12/04/1984US4486266 Integrated circuit method
12/04/1984US4486232 Electrode material for semi-conductor devices
12/04/1984US4485552 Complementary transistor structure and method for manufacture
12/04/1984US4485551 NPN Type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom and method for producing same
12/04/1984US4485550 For fabricating an integrated circuit structure in a semiconductor substrate
12/04/1984CA1179071A1 Semiconductor device
11/1984
11/28/1984EP0126611A2 Thermal resistance of semiconductor devices
11/28/1984EP0126499A1 Process for making a high-voltage bipolar transistor
11/28/1984EP0126424A2 Process for making polycide structures
11/28/1984EP0126184A2 Input protection circuit and bias method for scaled CMOS devices
11/27/1984US4485393 Semiconductor device with selective nitride layer over channel stop
11/27/1984US4485392 Lateral junction field effect transistor device
11/27/1984US4485390 Narrow channel FET
11/27/1984US4485128 Temperature and pressure control of pyrolytic decomposition
11/22/1984WO1984004628A1 Semiconductor device
11/21/1984EP0125968A1 Semiconductor power device and method of making the same
11/21/1984EP0125943A1 An indium phosphide-boron phosphide heterojunction bipolar transistor
11/21/1984EP0125738A1 Semiconductor device
11/21/1984EP0125732A1 Charge transfer device
11/21/1984EP0125666A2 An improved method of manufacturing flat panel backplanes, display transistors and displays made thereby
11/21/1984EP0125571A2 Low-noise planar transistor and method of making the same
11/21/1984EP0125504A1 Bipolar transistor MOS transistor hybrid semiconductor integrated circuit device
11/20/1984US4484214 pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth
11/20/1984US4484211 Semiconductor integrated circuit device
11/20/1984US4484209 SOS Mosfet with thinned channel contact region
11/20/1984US4484208 Junction-type field-effect transistor and its manufacture
11/20/1984US4484207 Static induction transistor and semiconductor integrated circuit using hetero-junction
11/20/1984US4484206 Semiconductor device
11/20/1984US4484143 In a data transmission system
11/20/1984US4483738 Method for manufacturing bipolar planar transistors
11/20/1984US4483726 Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area
11/14/1984EP0125174A2 A method of fabricating integrated circuit structures using replica patterning
11/14/1984EP0125138A1 Self protected thyristor and method of making
11/14/1984EP0124954A2 Semiconductor devices comprising metallic silicide elements
11/14/1984EP0124924A1 Semiconductor devise for generating electromagnetic radiation
11/13/1984USRE31734 Moderate field hole and electron injection from one interface of MIM or MIS structures
11/13/1984US4482911 Monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes
11/13/1984US4482910 Heterojunction emitter transistor with saturation drift velocity gradient in base
11/13/1984US4482907 Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor
11/13/1984US4482906 Semicondlictors
11/13/1984US4482394 Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion
11/13/1984US4481706 Process for manufacturing integrated bi-polar transistors of very small dimensions
11/13/1984US4481705 Process for doping field isolation regions in CMOS integrated circuits
11/13/1984US4481704 Method of making an improved MESFET semiconductor device
11/13/1984CA1177975A1 Glass passivated high power semiconductor devices
11/08/1984WO1984004418A1 Nonvolatile semiconductor memory device
11/07/1984EP0124277A1 Field effect transistor for integrated circuits
11/07/1984EP0124256A1 MESFETs and methods of manufacturing MESFETs
11/07/1984EP0124139A2 Semi-conductor device with increased break-down voltage
11/07/1984EP0124115A2 Semiconducter ROM device and method for manufacturing the same
11/07/1984EP0123936A1 Semiconductor device
11/07/1984EP0123926A2 Process for ion implantation in a semiconductor substrate
11/07/1984EP0123874A2 Device for generating a gate bias voltage for field-effect transistors
11/07/1984EP0123831A2 On chip charge trap compensated high voltage converter
11/07/1984EP0123726A2 Method for fabricating DEIS structure between two polysilicon gate electrodes and memories resulting therefrom
11/06/1984US4481609 Semiconductor memory miniaturized by line groups and staggered cells
11/06/1984US4481566 On chip charge trap compensated high voltage converter
11/06/1984US4481527 Metal nitride oxide semiconductors
11/06/1984US4481524 Semiconductor memory device having stacked polycrystalline silicon layers
11/06/1984US4481521 Insulated gate field effect transistor provided with a protective device for a gate insulating film
11/06/1984US4481046 Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
11/06/1984US4481042 Ion implantation method
11/06/1984US4481041 Doped self-aligning guard ring
11/06/1984US4480488 Force sensor with a piezoelectric FET
11/06/1984US4480478 Pressure sensor employing semiconductor strain gauge
11/06/1984US4480375 Simple process for making complementary transistors
11/06/1984CA1177583A1 Ballistic transport-type semiconductor device for detecting electrons and production process for such a device
11/06/1984CA1177582A1 Methods of manufacturing semiconductor devices
10/1984
10/31/1984EP0123384A1 Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure
10/31/1984EP0123309A2 Method of producing stable, low ohmic contacts in integrated semiconductor circuits
10/31/1984EP0123249A2 Semiconductor memory device having a floating gate
10/31/1984EP0123182A1 Process for producing highly integrated complementary MOS field effect transistor circuits
10/31/1984EP0123093A1 Schottky diode, integrated circuit with a Schottky diode and method of making the same
10/31/1984EP0122918A1 Acoustic charge transport device and method.
10/30/1984US4480319 Memory cell
10/30/1984US4479831 Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
10/30/1984US4479829 Method for making high resistance chromium-free semiconductor substrate body with low resistance active semiconductor layer by surface irradiation
10/30/1984US4479297 Method of fabricating three-dimensional semiconductor devices utilizing CeO2 and ion-implantation.
10/30/1984CA1177148A1 Avalanche photodiode array
10/25/1984WO1984004204A1 Method of manufacturing a semiconductor device having small dimensions
10/25/1984WO1984004197A1 Vertical d-mos eprom
10/24/1984EP0122598A2 High speed diode
10/24/1984EP0122313A1 Method of making a monolithic integrated circuit comprising at least one insulated gate field-effect transistor
10/23/1984US4479203 Electrically erasable programmable read only memory cell
10/23/1984US4479201 Serpentine charge coupled device
10/23/1984US4479139 Charge coupled device open circuit image detector
10/23/1984US4478881 Tungsten barrier contact
10/23/1984US4478679 Self-aligning process for placing a barrier metal over the source and drain regions of MOS semiconductors
10/23/1984US4478655 Method for manufacturing semiconductor device
10/23/1984US4478654 Amorphous silicon carbide method
10/23/1984US4477965 Process for manufacturing a monolithic integrated solid-state circuit comprising at least one bipolar planar transistor
10/23/1984US4477963 Electrode protective coating of silicon nitride, silicon layer is grown over wafer forming epitaxial section except protective section, and preferential etching
10/23/1984CA1176764A1 Semiconductor device
10/23/1984CA1176762A1 Semiconductor device having a reduced surface field strength
10/23/1984CA1176761A1 Method of manufacturing a semiconductor device
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