| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/23/1985 | EP0132025A2 Heterostructure bipolar transistor |
| 01/23/1985 | EP0132009A2 Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method |
| 01/23/1985 | EP0131758A2 High voltage thyristor valve |
| 01/23/1985 | EP0131715A1 Magnetically sensitive junction transistor |
| 01/22/1985 | US4495513 Bipolar transistor controlled by field effect by means of an isolated gate |
| 01/22/1985 | US4495512 Self-aligned bipolar transistor with inverted polycide base contact |
| 01/22/1985 | US4495511 Permeable base transistor structure |
| 01/22/1985 | US4495222 Metallization means and method for high temperature applications |
| 01/22/1985 | US4495044 Diamondlike flakes |
| 01/22/1985 | US4495026 Preferential etching of aluminum-silver-aluminum layers on a thyristor substrate |
| 01/22/1985 | US4495010 Method for manufacturing fast bipolar transistors |
| 01/22/1985 | US4494996 Drain leak current reduction; improved ionic mobility |
| 01/22/1985 | US4494304 Forming chan-stops by selectively implanting impurity ions through field-oxide layer during later stage of MOS-device fabrication |
| 01/22/1985 | CA1181533A1 Semiconductor devices and their manufacture |
| 01/22/1985 | CA1181532A1 Insulated gate field effect transistor |
| 01/16/1985 | EP0131379A2 Semiconductor device having a heterojunction, and method for producing it |
| 01/16/1985 | EP0131111A2 Semiconductor device having a heterojunction |
| 01/15/1985 | US4494135 Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode |
| 01/15/1985 | US4494134 High voltage semiconductor devices comprising integral JFET |
| 01/15/1985 | US4494016 In a power amplifier circuit |
| 01/15/1985 | US4493142 III-V Based semiconductor devices and a process for fabrication |
| 01/09/1985 | EP0130774A1 Process for fabricating bipolar transistor |
| 01/09/1985 | EP0130737A1 Semiconductor device having input protection circuit |
| 01/09/1985 | EP0130736A2 Processes for making integrated circuit single FET and storage capacitor memory cells |
| 01/09/1985 | EP0130676A2 Semiconductor device having a hetero junction |
| 01/09/1985 | EP0130669A1 Gate turn off thyristor with mesh cathode structure |
| 01/09/1985 | EP0130508A1 Field effect transistor of the vertical MOS type |
| 01/09/1985 | EP0130468A2 Protective coatings for conductors to prevent mechanical and electronic failures particularly during heat-treatment of their supporting structures |
| 01/09/1985 | EP0130457A1 Semiconductor device having at least one pn junction and in its base layer depth sharply localized ions, method for its production and its use |
| 01/09/1985 | EP0130416A1 A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact |
| 01/09/1985 | EP0130412A1 Semiconductor device having a protection circuit |
| 01/08/1985 | US4493058 Integrated circuit for writing, reading and erasing memory matrices with insulated-gate field-effect transistors having non-volatile storage behaviour |
| 01/08/1985 | US4492980 Solid state image-sensing device |
| 01/08/1985 | US4492974 DMOS With gate protection diode formed over base region |
| 01/08/1985 | US4492971 Semiconductors; optoelectronics |
| 01/08/1985 | US4492716 Method of making non-crystalline semiconductor layer |
| 01/08/1985 | US4492008 Methods for making high performance lateral bipolar transistors |
| 01/08/1985 | CA1180796A1 Light-activated semiconductor device |
| 01/03/1985 | WO1985000077A2 Self-aligned gate mesfet and the method of fabricating same |
| 01/02/1985 | EP0129763A1 Circuit for transferring signals, which have been freed of background noise, from an infrared detector to a charge-coupled device channel |
| 01/02/1985 | EP0129707A1 Magnetically sensitive semiconductor devices |
| 01/02/1985 | EP0129702A1 Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
| 01/02/1985 | EP0017808B1 Method involving testing an electrically alterable microelectronic memory circuit |
| 01/02/1985 | CA1180468A Semiconductor device having a safety device |
| 01/01/1985 | US4491860 Titanium, tungsten, nitride, films |
| 01/01/1985 | US4491859 Semiconductor non-volatile memory device |
| 01/01/1985 | US4491858 Dynamic storage device with extended information holding time |
| 01/01/1985 | US4491746 For use with a pulse generator |
| 01/01/1985 | US4491743 Voltage translator |
| 01/01/1985 | US4491742 Semiconductor switch device |
| 01/01/1985 | US4491486 Method for manufacturing a semiconductor device |
| 12/27/1984 | EP0129477A1 Double heterojunction bipolar transistor suited for monolithic integration with optoelectronic devices |
| 12/27/1984 | EP0129385A2 Improvements in bipolar transistors |
| 12/27/1984 | EP0129362A2 Schottky barrier diode with guard ring |
| 12/27/1984 | EP0129265A1 Methods of manufacturing semiconductor devices with reduction in the charge carrier trap density |
| 12/27/1984 | EP0129045A1 Method of making an integrated insulated-gate field-effect transistor having self-aligned contacts in respect of the gate electrode |
| 12/27/1984 | EP0129037A1 Polysilicon FETs |
| 12/27/1984 | CA1179924A Method of fabricating a titanium dioxide rectifier |
| 12/25/1984 | US4490736 Semiconductor device and method of making |
| 12/25/1984 | US4490734 Variable impedance circuit employing an RIS field effect transistor |
| 12/25/1984 | US4490208 Method of producing thin films of silicon |
| 12/25/1984 | US4490182 Semiconductor processing technique for oxygen doping of silicon |
| 12/25/1984 | US4489480 Method of manufacturing field effect transistors of GaAs by ion implantation |
| 12/19/1984 | EP0128751A2 Manufacturing method of Schottky gate FET |
| 12/19/1984 | EP0128615A1 Charge-coupled semiconductor device and image sensor device of high information density |
| 12/19/1984 | EP0128427A2 Semiconductor memory having circuit effecting refresh on variable cycles |
| 12/19/1984 | EP0128385A2 Method of producing a semiconductor device having electrodes and wirings |
| 12/19/1984 | EP0128268A1 Semiconductor device having a control electrode |
| 12/18/1984 | US4489341 Merged-transistor switch with extra P-type region |
| 12/18/1984 | US4489339 Semiconductor device |
| 12/18/1984 | US4489338 Memory cell with thick oxide at least as deep as channel stop |
| 12/18/1984 | US4488931 Using silicon dioxide as mask |
| 12/18/1984 | US4488930 Process for producing circular gallium arsenide wafer |
| 12/18/1984 | US4488351 Method for manufacturing semiconductor device |
| 12/18/1984 | US4488350 Method of making an integrated circuit bipolar memory cell |
| 12/18/1984 | US4488349 Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization |
| 12/18/1984 | US4488348 Method for making a self-aligned vertically stacked gate MOS device |
| 12/18/1984 | CA1179788A1 Semiconductor device |
| 12/18/1984 | CA1179787A1 Method of fabricating a semiconductor device |
| 12/18/1984 | CA1179786A1 Lateral transistor structure having self-aligned base and base contact and method of fabrication |
| 12/12/1984 | EP0128062A1 Enhancement-mode field-effect transistor |
| 12/12/1984 | EP0128061A1 Depletion-mode field-effect transistor |
| 12/12/1984 | EP0127814A1 Process for forming a narrow mesa on a substrate and process for making a self-aligned gate field effect transistor |
| 12/12/1984 | EP0127725A1 Method of manufacturing a semiconductor device having lightly doped regions |
| 12/11/1984 | US4488164 Quantized Hall effect switching devices |
| 12/11/1984 | US4488129 Device for current-reading of a quantity of electric charges and a charge-transfer filter equipped with said device |
| 12/11/1984 | US4488038 Phototransistor for long wavelength radiation |
| 12/11/1984 | US4486943 Zero drain overlap and self aligned contact method for MOS devices |
| 12/11/1984 | US4486942 Method of manufacturing semiconductor integrated circuit BI-MOS device |
| 12/11/1984 | CA1179428A1 Earom cell matrix and logic arrays with common memory gate |
| 12/11/1984 | CA1179406A1 Protection circuit for integrated circuit devices |
| 12/06/1984 | WO1984004853A1 Method of manufacturing semiconductor device |
| 12/06/1984 | WO1984004852A1 Process for fabricating complementary and nonvolatile type devices on a common substrate |
| 12/05/1984 | EP0127488A2 Method of making a power transistor with open circuit voltage holding properties |
| 12/05/1984 | EP0127281A1 An electrode for a semiconductor device |
| 12/05/1984 | EP0127223A1 Semiconductor device |
| 12/05/1984 | EP0127176A2 Integrated pressure sensor |
| 12/05/1984 | EP0127142A1 Semiconductor device having at least one field effect transistor |
| 12/05/1984 | EP0126960A1 Method of making floating gate MOS field-effect transistor memory cells |
| 12/05/1984 | EP0126914A2 Control unit for controlling a field-sensitive display device by means of semiconductor elements |