Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/17/1984 | US4460910 Heterojunction semiconductor |
07/17/1984 | US4460417 Method of manufacturing insulating film and electric device utilizing the same |
07/17/1984 | US4459855 Semiconductor pressure sensor |
07/17/1984 | US4459741 Method for producing VLSI complementary MOS field effect transistor circuits |
07/17/1984 | US4459740 Dopes, etching, masking, capacitors |
07/17/1984 | US4459739 Thin film transistors |
07/11/1984 | EP0113334A2 Normally-off semiconductor device with low on resistance and circuit analogue |
07/11/1984 | EP0113161A2 Method of fabricating a schottky gate field effect transistor |
07/11/1984 | EP0113059A1 Method of forming a submicron width conductor and method of forming a field effect transistor incorporating such a conductor as a gate electrode |
07/11/1984 | EP0112983A2 FET ROM or PLA and method for making such |
07/10/1984 | US4459684 Nonvolatile JRAM cell using nonvolatile capacitance for information retrieval |
07/10/1984 | US4459638 Assembly of an externally ventilated semiconductor arrangement |
07/10/1984 | US4459609 Charge-stabilized memory |
07/10/1984 | US4459608 Reprogrammable semiconductor read-only memory of the floating-gate type |
07/10/1984 | US4459606 Integrated injection logic semiconductor devices |
07/10/1984 | US4459605 Vertical MESFET with guardring |
07/10/1984 | US4459556 Field effect transistor |
07/10/1984 | US4459163 Amorphous semiconductor method |
07/10/1984 | US4458407 Integrated circuits, patterns, photoresists, masking, etching, stripping, lamination, computers |
07/10/1984 | CA1170787A1 Semiconductor device |
07/10/1984 | CA1170784A1 Protective semiconductor device utilizing back-to- back zener diodes |
07/06/1984 | EP0063578A4 Process for forming a polysilicon gate integrated circuit device. |
07/04/1984 | EP0112773A2 Buried Schottky clamped transistor |
07/04/1984 | EP0112670A1 Semiconductor memory device having stacked capacitor-tape memory cells |
07/04/1984 | EP0112662A1 Stacked MOS devices with polysilicon interconnects |
07/04/1984 | EP0112657A2 Field effect transistor and process for fabricating it |
07/04/1984 | EP0112607A2 Power MOS transistor |
07/04/1984 | EP0112489A1 Semiconductor device with compact isolation and method of making the same |
07/04/1984 | EP0112417A1 Semiconductor integrated display and method of making same |
07/03/1984 | US4458348 Electrically programmable read only memory having reduced leakage current |
07/03/1984 | US4458262 CMOS Device with ion-implanted channel-stop region and fabrication method therefor |
07/03/1984 | US4458261 Insulated gate type transistors |
07/03/1984 | US4458260 Avalanche photodiode array |
07/03/1984 | US4458259 Etched-source static induction transistor |
07/03/1984 | US4457588 Removal of static electricity on a liquid crystal display during rubbing process |
07/03/1984 | EP0110952A4 Semiconductor integrated circuit capacitor. |
07/03/1984 | CA1170363A1 Mos memory cell |
06/27/1984 | EP0112088A1 Method for using a charge coupled device as a peak detector |
06/27/1984 | EP0112078A2 A semiconductor memory element and a method for manufacturing it |
06/27/1984 | EP0112034A2 A MIS integrated circuit device protected from static charge |
06/27/1984 | EP0111880A2 Semiconductor image device |
06/27/1984 | EP0111868A2 A memory system for storing analog information |
06/27/1984 | EP0111804A1 Bidirectional insulated-gate rectifier structures and method of operation |
06/27/1984 | EP0111803A1 Lateral insulated-gate rectifier structures |
06/27/1984 | EP0111706A1 Sidewall isolation for gate of field effect transistor and process for the formation thereof |
06/27/1984 | EP0111698A2 Magnetic-field sensor |
06/27/1984 | EP0111651A2 Semiconductor device comprising dielectric isolation regions |
06/26/1984 | USRE31612 CCD Input circuits |
06/26/1984 | US4456978 Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process |
06/26/1984 | US4456920 Semiconductor device |
06/26/1984 | US4456918 Isolated gate JFET structure |
06/26/1984 | US4456917 Variable capacitor |
06/26/1984 | US4456901 Semiconductor pressure tranducer |
06/26/1984 | US4456630 Etching thin film semiconductor, first with acid then basic solution, then electrodeposition of metal |
06/26/1984 | US4456522 Vapor deposition of coating layer; applying polyimide layer; etching |
06/26/1984 | US4456488 Masked doping in oxidizing atmosphere, covering with protective insulative layer, then concurrent diffusion in base and emitter region |
06/26/1984 | US4455740 Method of manufacturing a self-aligned U-MOS semiconductor device |
06/26/1984 | US4455739 Process protection for individual device gates on large area MIS devices |
06/26/1984 | US4455738 Self-aligned gate method for making MESFET semiconductor |
06/26/1984 | CA1169978A1 Power semiconductor switching device and semiconductor device thereof |
06/26/1984 | CA1169922A1 Circuit including an mos transistor whose gate is protected from oxide rupture |
06/21/1984 | WO1984002427A1 Power transistor |
06/20/1984 | EP0111364A2 A semiconductor device comprising at least one Schottkytype rectifier having controllable barrier height |
06/20/1984 | EP0111347A1 MIS semiconductor device |
06/20/1984 | EP0111346A2 One-dimensional semiconductor imaging device |
06/20/1984 | EP0111307A2 Semiconductor integrated circuit having a buried resistor |
06/20/1984 | EP0111181A2 Semiconductor component with a contact hole |
06/20/1984 | EP0111166A1 Gate turn-off thyristor |
06/20/1984 | EP0111099A1 A method of making complementary metal oxide semiconductor structures |
06/20/1984 | EP0111098A1 Method of making complementary metal oxide semiconductor structures |
06/20/1984 | EP0111097A1 Method for making semiconductor devices having a thick field dielectric and a self-aligned channel stopper |
06/20/1984 | EP0110952A1 Semiconductor integrated circuit capacitor. |
06/19/1984 | US4455666 Compensation of 1st order transfer inefficiency effect in a C.T.D. |
06/19/1984 | US4455567 Polycrystalline semiconductor resistor having a noise reducing field plate |
06/19/1984 | US4455565 Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode |
06/19/1984 | US4455564 Field effect transistor with a high cut-off frequency |
06/19/1984 | US4455547 Resistive element formed in a semiconductor substrate |
06/19/1984 | US4454647 Isolation for high density integrated circuits |
06/19/1984 | US4454646 Isolation for high density integrated circuits |
06/19/1984 | CA1169586A1 Semi-conductor device with schottky barrier silicide contacts and method therefor |
06/19/1984 | CA1169585A1 Self-aligned metal process for field effect transistor integrated circuits |
06/19/1984 | CA1169557A1 High density v-mos memory array |
06/19/1984 | CA1169556A1 Storage system having bilateral field effect transistor personalization |
06/13/1984 | EP0110777A1 Structure of a thyristor with an internal ignition and its use in the realization of a bidirectional device |
06/13/1984 | EP0110776A1 Control circuit for a sensitive semiconductor device of the thyristor or triac type with an impedance for enhancing self-firing |
06/13/1984 | EP0110773A2 Control of substrate injection in lateral bipolar transistors |
06/13/1984 | EP0110551A2 Light-activated bi-directional thyristor |
06/13/1984 | EP0110401A2 Integrated semiconductor circuit having an interconnection layer consisting of an aluminium/silicon alloy |
06/13/1984 | EP0110331A2 A MOS transistor |
06/13/1984 | EP0110320A1 A MOS transistor |
06/13/1984 | EP0110313A2 Semiconductor integrated circuit device and a method for manufacturing the same |
06/13/1984 | EP0110211A2 Bipolar transistor integrated circuit and method for manufacturing |
06/13/1984 | EP0110103A1 Method of making complementary transistor metal oxide semiconductor structures |
06/13/1984 | EP0109996A1 Self-biased resistor structure and application to interface circuits realization |
06/12/1984 | US4454527 Thyristor having controllable emitter short circuits and a method for its operation |
06/12/1984 | US4454525 IGFET Having crystal orientation near (944) to minimize white ribbon |
06/12/1984 | US4454524 Semiconductor memory device |
06/12/1984 | US4454523 High voltage field effect transistor |
06/12/1984 | US4454435 CCD Amplifier using second correlated sampling and negative feedback for noise reduction |
06/12/1984 | US4453306 Fabrication of FETs |