Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/17/1985 | EP0137257A2 Resistive gate field effect transistor logic family |
04/17/1985 | EP0137207A2 Stacked double dense read only memory |
04/17/1985 | EP0137195A1 Dielectric isolated circuit and method of making |
04/17/1985 | EP0137166A2 High-purity molybdenum target and high-purity molybdenum silicide target for LSI electrodes and process for producing the same |
04/16/1985 | US4511996 Memory cell having a double gate field effect transistor and a method for its operation |
04/16/1985 | US4511913 Gate-turn off thyristor with optimized anode shorting resistance, Rso |
04/16/1985 | US4511912 Integrated power transistor arrangement |
04/16/1985 | US4511911 Dense dynamic memory cell structure and process |
04/16/1985 | US4511413 Process for forming an IC wafer with buried Zener diodes |
04/16/1985 | US4510676 Method of fabricating a lateral PNP transistor |
04/16/1985 | US4510671 Dielectrically isolated transducer employing single crystal strain gages |
04/16/1985 | US4510670 Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors |
04/16/1985 | CA1185698A1 Method and means for diagnostic testing of ccd memories |
04/16/1985 | CA1185454A1 Silicon-glass-silicon capacitive pressure transducer |
04/16/1985 | CA1185453A1 Electrostatic bonded, silicon capacitive pressure transducer |
04/11/1985 | WO1985001613A1 High density mosfet with field oxide aligned channel stops and method of fabricating the same |
04/10/1985 | EP0136941A2 Millimeter-wave switch |
04/10/1985 | EP0136868A2 Semiconductor device with protective elements |
04/10/1985 | EP0136771A2 A nonvolatile semiconductor memory device |
04/10/1985 | EP0136632A2 A single mask process for implanting self-aligned source and drain electrodes to form a cmos structure |
04/10/1985 | EP0136509A2 Active matrix type display apparatus |
04/10/1985 | EP0136494A1 Gallium indium arsenide field-effect transistor |
04/10/1985 | EP0136444A1 Power thyristor on a substrat |
04/10/1985 | EP0136350A1 Inverted polycide sandwich structure and method |
04/09/1985 | US4510517 Electronically controlled variable semiconductor resistor |
04/09/1985 | US4510516 Three-electrode MOS electron device |
04/09/1985 | US4510514 Ohmic contacts for semiconductor devices |
04/09/1985 | US4510016 Repeated oxidation and stripping the walls of grooves to produce desired thickness |
04/09/1985 | US4509991 Forming both n+ and p+ source/drain regions with single resist patttern |
04/09/1985 | US4509250 Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor |
04/09/1985 | CA1185379A1 Integrated overload protection circuit |
04/03/1985 | EP0136108A1 Heterojunction semiconductor device |
04/03/1985 | EP0135824A1 Semiconductor memory device |
04/03/1985 | EP0135733A2 Rectifier diode for a high reverse voltage |
04/03/1985 | EP0135559A1 Integrated self-firing thyristor structure for on/off switching of high currents, and control circuit thereof |
04/03/1985 | EP0032958B1 Semiconductor memory device |
04/02/1985 | US4509089 Two-pole overcurrent protection device |
04/02/1985 | US4509070 Metal-insulator-semiconductor transistor device |
04/02/1985 | US4509069 Light triggerable thyristor with controllable emitter-short circuit and trigger amplification |
04/02/1985 | US4509068 Thyristor with controllable emitter short circuits and trigger amplification |
04/02/1985 | US4509067 Semiconductor integrated circuit devices with protective means against overvoltages |
04/02/1985 | US4509066 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom |
04/02/1985 | US4508609 Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets |
04/02/1985 | US4508579 Lateral device structures using self-aligned fabrication techniques |
04/02/1985 | US4507848 Control of substrate injection in lateral bipolar transistors |
04/02/1985 | US4507846 Method for making complementary MOS semiconductor devices |
04/02/1985 | US4507845 Method of making field effect transistors with opposed source _and gate regions |
03/28/1985 | WO1985001391A1 Latch-up immune, multiple retrograde well high density cmos fet |
03/27/1985 | EP0135408A1 High-frequency bipolar transistor and method of making the same |
03/27/1985 | EP0135401A1 Process for producing isolated semiconductor components in a semiconductor substrate |
03/27/1985 | EP0135354A2 Integrated circuit and method of manufacture |
03/27/1985 | EP0135344A1 Manufacture of cadmium mercury telluride |
03/27/1985 | EP0135307A2 Method of manufacturing field effect transistors |
03/27/1985 | EP0135243A1 A method of producing a semiconductor structure on a substrate and a semiconductor device manufactured thereby |
03/27/1985 | EP0135163A1 Method of producing highly integrated complementary circuits of MOS field effect transistors |
03/27/1985 | EP0135137A2 Static memory cell |
03/27/1985 | EP0135036A2 Semiconductor memory |
03/26/1985 | US4507684 Reducing grain in multi-phase-clocked CCD imagers |
03/26/1985 | US4507673 Semiconductor memory device |
03/26/1985 | US4507171 Method for contacting a narrow width PN junction region |
03/26/1985 | US4507159 Method of manufacturing high capacity semiconductor capacitance devices |
03/26/1985 | US4507158 Trench isolated transistors in semiconductor films |
03/26/1985 | US4506436 Method for increasing the radiation resistance of charge storage semiconductor devices |
03/26/1985 | US4506435 Glass layer |
03/26/1985 | US4506434 Method for production of semiconductor devices |
03/26/1985 | CA1184672A1 Method of fabricating field effect transistors |
03/20/1985 | EP0134456A2 Pinch rectifier |
03/20/1985 | EP0134432A2 Complementary semiconductor integrated circuit having a protection device |
03/19/1985 | US4506283 Small area high value resistor with greatly reduced parasitic capacitance |
03/19/1985 | US4506282 Normally-off semiconductor device with low on resistance and circuit analogue |
03/19/1985 | US4506281 Gallium arsenide, static induction transistor |
03/19/1985 | US4506280 Semiconductor device |
03/19/1985 | US4506279 Metal-oxide-semiconductor device with bilayered source and drain |
03/19/1985 | US4506164 CMIS Level shift circuit |
03/19/1985 | US4505950 Method of manufacturing a multiple-layer, non-single-crystalline semiconductor on a substrate |
03/19/1985 | US4505799 Ph sensitive |
03/19/1985 | US4505766 Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition |
03/19/1985 | US4505028 Method of producing semiconductor device |
03/19/1985 | US4505027 Very large scale integration |
03/19/1985 | US4505026 CMOS Process for fabricating integrated circuits, particularly dynamic memory cells |
03/19/1985 | US4505024 Method of manufacturing semiconductor device, including a step of patterning a conductor layer |
03/19/1985 | US4505023 Indium phosphide, semiconductors, channels, masking, dopes, annealing |
03/19/1985 | US4505022 Junction vertical field effect transistor and process for the production thereof |
03/19/1985 | CA1184320A1 Schottky-barrier gate field effect transistor and a process for the production of the same |
03/19/1985 | CA1184300A1 Mask programmable read-only memory stacked above a semiconductor substrate |
03/19/1985 | CA1184020A1 Method of manufacturing semiconductor device |
03/14/1985 | WO1985001146A1 Mos floating gate memory cell and process for fabricating same |
03/13/1985 | EP0134166A1 Wafer fabrication by implanting through protective layer |
03/13/1985 | EP0134069A2 Bipolar transistor having a heterojunction between base and collector |
03/13/1985 | EP0133954A1 A method for manufacturing a semiconductor device |
03/12/1985 | US4504930 Charge-coupled device |
03/12/1985 | US4504848 Solid state image sensor with over-flow control |
03/12/1985 | US4504847 Static induction type semiconductor device |
03/12/1985 | US4504743 Semiconductor resistor element |
03/12/1985 | US4504521 LPCVD Deposition of tantalum silicide |
03/12/1985 | US4504518 Method of making amorphous semiconductor alloys and devices using microwave energy |
03/12/1985 | US4504332 Method of making a bipolar transistor |
03/12/1985 | US4503709 Pressure sensor |
03/12/1985 | US4503603 Process for manufacturing a monolithic integrated solid-state circuit having at least one insulated-gate field-effect transistor and at least one bipolar transistor |
03/12/1985 | US4503601 Oxide trench structure for polysilicon gates and interconnects |