| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/21/1985 | CA1187623A1 Process for self-healing dielectric |
| 05/21/1985 | CA1187622A1 Semiconductor device having a body of amorphous silicon |
| 05/21/1985 | CA1187612A1 Charge coupled device |
| 05/15/1985 | EP0141571A2 High performance two layer metal cmos process using a reduced number of masks |
| 05/15/1985 | EP0141538A1 Static induction thyristor |
| 05/15/1985 | EP0141425A1 Small area thin film transistor |
| 05/15/1985 | EP0141276A2 Locked plug-in connection for pipes, especially for socket pipes |
| 05/15/1985 | EP0141274A2 I2L circuit |
| 05/15/1985 | EP0141207A2 Integrable NPN transistor |
| 05/15/1985 | EP0141098A2 Impurity band conduction semiconductor devices |
| 05/15/1985 | EP0141088A2 Semiconductor device with a hot electron transistor |
| 05/15/1985 | EP0141075A1 Power transistor |
| 05/15/1985 | EP0140992A1 Transducer element, method for its manufacture and its use in a pressure pick-up device |
| 05/15/1985 | EP0140965A1 Method of making a nonvolatile semiconductor memory device. |
| 05/15/1985 | EP0045181B1 High electron mobility heterojunction semiconductor device and method of manufacturing |
| 05/14/1985 | US4517583 Semiconductor integrated circuit including a fuse element |
| 05/14/1985 | US4517582 Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages |
| 05/14/1985 | US4517047 Gallium arsenide molecular beam epitaxial semiconductors |
| 05/14/1985 | US4516315 Method of making a self-protected thyristor |
| 05/14/1985 | US4516313 Unified CMOS/SNOS semiconductor fabrication process |
| 05/14/1985 | CA1187210A1 Method for producing vlsi complementary mos field effect transistor circuits |
| 05/14/1985 | CA1187209A1 Method for manufacturing vlsi complementary mos field effect transistor circuits in silicon gate technology |
| 05/14/1985 | CA1187206A1 Schottky-barrier gate field effect transistor and a process for the production of the same |
| 05/14/1985 | CA1187177A1 Serial-parallel-serial charge coupled device and method of transferring charge therein |
| 05/14/1985 | CA1187138A1 Ph electrode |
| 05/09/1985 | WO1985002062A1 Cmos integrated circuit configuration for eliminating latchup |
| 05/09/1985 | WO1985002061A1 Multi-gate field effect transistor |
| 05/08/1985 | EP0140772A2 Millimeter wave high-power limiter using P-I-N diodes, and method of making these diodes |
| 05/08/1985 | EP0140369A1 Semiconductor integrated circuit including series connected transistors |
| 05/08/1985 | EP0140276A1 Power MOS FET and method of manufacturing the same |
| 05/08/1985 | EP0140095A1 Semiconductor diode |
| 05/08/1985 | EP0139998A1 Power semiconductor device with main current section and emulation current section |
| 05/08/1985 | EP0139946A2 Semiconductor device |
| 05/08/1985 | EP0139884A1 Method of forming ohmic contacts |
| 05/08/1985 | EP0139764A1 Method of manufacturing thin-film integrated devices |
| 05/08/1985 | EP0139663A1 Self-aligned ldmos and method |
| 05/07/1985 | US4516223 Semiconductor read-only memory |
| 05/07/1985 | US4516149 Semiconductor device having ribbon electrode structure and method for fabricating the same |
| 05/07/1985 | US4516147 Semiconductor device having a substrate covered with a high impurity concentration first polycrystalline layer and then a lower impurity concentration second polycrystalline layer |
| 05/07/1985 | US4516143 Self-aligned power MOSFET with integral source-base short and methods of making |
| 05/07/1985 | US4515654 Method for making semiconductor devices utilizing eutectic masks |
| 05/07/1985 | US4514898 Method of making a self protected thyristor |
| 05/07/1985 | US4514897 Electrically programmable floating gate semiconductor memory device |
| 05/07/1985 | US4514895 Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions |
| 05/07/1985 | US4514894 Semiconductor integrated circuit device manufacturing method |
| 05/07/1985 | US4514893 Fabrication of FETs |
| 05/07/1985 | CA1186811A1 Method for producing a vertical channel transistor |
| 05/07/1985 | CA1186809A1 Method for defining submicron features in semiconductor devices |
| 05/07/1985 | CA1186808A1 Method of fabrication of dielectrically isolated cmos device with an isolated slot |
| 05/07/1985 | CA1186807A1 Multi-dimensional quantum well device |
| 05/02/1985 | EP0139587A2 Fabrication process for a dielectric isolated complementary ic |
| 05/02/1985 | EP0139585A1 Process for producing of a thin film transistor with self-aligned gate |
| 05/02/1985 | EP0139505A1 Proximity doping of multilayered amorphous semiconductors |
| 05/02/1985 | EP0139488A1 A method for sputtering a pin or nip amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorus heavily doped targets |
| 05/02/1985 | EP0139487A1 A method for sputtering a pin or nip amorphous silicon semi-conductor device having partially crystallised P and N-layers |
| 05/02/1985 | EP0139467A1 Method of manufacturing an insulated-gate field-effect transistor |
| 05/02/1985 | EP0139428A2 High-density semiconductor memory device |
| 05/02/1985 | EP0139427A1 Semiconductor integrated circuit device |
| 05/02/1985 | EP0139371A1 Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas |
| 05/02/1985 | EP0139266A2 A semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor and a manufacturing method of the same |
| 05/02/1985 | EP0139165A2 Method of making a trench isolated integrated circuit device |
| 05/02/1985 | EP0139130A1 Method for making a high performance transistor integrated circuit and the resulting integrated circuit |
| 05/02/1985 | EP0139027A1 Monolithic integrated circuit with at least one integrated resistor |
| 05/02/1985 | EP0139019A1 Semiconductor device and method of manufacture thereof |
| 05/02/1985 | EP0138978A1 Method of manufacturing a semiconductor device having small dimensions. |
| 05/02/1985 | EP0138963A1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers. |
| 04/30/1985 | US4514830 Defect-remediable semiconductor integrated circuit memory and spare substitution method in the same |
| 04/30/1985 | US4514747 Field controlled thyristor with double-diffused source region |
| 04/30/1985 | US4514646 Semiconductor integrated circuit device including a protective resistor arrangement for output transistors |
| 04/30/1985 | US4514253 By masking, photolithography |
| 04/30/1985 | US4514233 Method of making improved aluminum metallization in self-aligned polysilicon gate technology |
| 04/30/1985 | US4513905 Nitride barrier layer to improve conductor bonding |
| 04/30/1985 | US4513494 Late mask process for programming read only memories |
| 04/30/1985 | CA1186420A1 Method of forming a thin film transistor |
| 04/30/1985 | CA1186419A1 Semiconductor device comprising a field effect transistor |
| 04/24/1985 | EP0138638A2 Field effect transistor having an ultra-short gate and a horizontal structure, and process for manufacturing the same |
| 04/24/1985 | EP0138563A2 Lateral transistors |
| 04/24/1985 | EP0138162A2 CMOS structure |
| 04/24/1985 | EP0138023A2 Semiconductor vibration detection device with lever structure |
| 04/24/1985 | EP0137992A2 Lateral bipolar transistor formed in a silicon on insulator (SOI) substrate |
| 04/24/1985 | EP0137988A2 Infrared imager |
| 04/24/1985 | EP0137951A1 Thyristor with MIS-controlled emitter short circuits |
| 04/24/1985 | EP0137918A1 Method for eliminating edge lift up during thermal oxidation of a polycrystalline silicon member |
| 04/24/1985 | EP0137914A2 Silicon wafers for integrated circuit chip fabrication |
| 04/24/1985 | EP0137906A1 Method for fabricating vertical NPN and lateral PNP transistors in the same semiconductor body |
| 04/24/1985 | EP0137905A1 Method for making lateral bipolar transistors |
| 04/23/1985 | US4513431 Charge coupled device output circuit structure |
| 04/23/1985 | US4513309 Prevention of latch-up in CMOS integrated circuits using Schottky diodes |
| 04/23/1985 | US4513306 Current ratioing device structure |
| 04/23/1985 | US4513303 Self-aligned metal field effect transistor integrated circuit |
| 04/23/1985 | US4512870 Chemically sensitive element |
| 04/23/1985 | US4512076 Semiconductor device fabrication process |
| 04/23/1985 | US4512074 Method for manufacturing a semiconductor device utilizing selective oxidation and diffusion from a polycrystalline source |
| 04/23/1985 | US4512073 Method of forming self-aligned contact openings |
| 04/23/1985 | CA1186072A1 High voltage metal oxide semiconductor transistors |
| 04/17/1985 | EP0137645A2 Method of forming a shallow N-type region |
| 04/17/1985 | EP0137573A2 Laser device and method for a self-aligned multilayer epitaxy structure device |
| 04/17/1985 | EP0137564A2 Integrated circuit comprising complementary field effect transistors |
| 04/17/1985 | EP0137554A2 Method of manufacturing a semiconductor device and semiconductor device manufactured by the use of such a method |
| 04/17/1985 | EP0137319A2 Semiconductor device and a method of manufacturing the same |