Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2001
10/11/2001US20010028086 High-performance MOS transistor of LDD structure and manufacturing method of the same
10/11/2001US20010028085 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
10/11/2001US20010028084 Trench transistor with self-aligned source
10/11/2001US20010028083 Super-junction semiconductor device and method of manufacturing the same
10/11/2001US20010028080 Semiconductor device and method of fabricating the same
10/11/2001US20010028071 Array substrate for use in LCD device and method of fabricating same
10/11/2001US20010028070 Compound semiconductor device and method for controlling characteristics of the same
10/11/2001US20010028067 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
10/11/2001US20010028065 Semiconductor device and method of fabricating the same
10/11/2001US20010028060 Semiconductor display device
10/11/2001US20010028058 Thin film transistor and a method of forming the same
10/11/2001US20010028057 Thin-film transistor and method for making the smae
10/11/2001US20010028056 Evaluation method of semiconductor chargeup damage and apparatus therefor
10/11/2001US20010028055 Quantum dot infrared photodetector (QDIP) and methods of making the same
10/11/2001US20010028035 Infrared sensor and manufacturing method thereof
10/11/2001DE10117350A1 Semiconductor device such as lateral MOSFET has impurity concentration which gradually increases from semiconductor layer to drain region
10/11/2001DE10017422A1 Mikromechanisches Bauelement und entsprechendes Herstellungverfahren Micro-mechanical device and manufacturing method thereof
10/11/2001DE10016233A1 Thyristor that can be switched off when in switch-on state without current flowing through thyristor falling to below value of holding current
10/11/2001DE10015884A1 Schottky-Diode Schottky diode
10/11/2001DE10014660A1 Semiconducting arrangement improved to enable further increase in doping of drift path whilst preventing problems due to different thermal expansion coefficients - has rigid electrodes electrically separated by insulating arrangement contg. insulating or holding coating(s) and/or pn junction and at least one hollow vol
10/11/2001DE10014659A1 Semiconducting circuit arrangement improved to enable yet more effective suppression of unwanted transverse currents
10/10/2001EP1143618A1 Overcurrent control circuit of power semiconductor device
10/10/2001EP1143609A2 High frequency power amplifier having a bipolar transistor
10/10/2001EP1143527A1 Semiconductor device of soi structure
10/10/2001EP1143526A2 Field effect transistor and method of manufacturing the same
10/10/2001EP1143525A2 Transistor-type ferroelectric nonvolatile memory element
10/10/2001EP1143524A1 Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
10/10/2001EP1143510A2 Semiconductor device having increased reliability and method of producing the same and semiconductor chip suitable for such a semiconductor device and method of producing the same
10/10/2001EP1143505A2 Planar isolation technique for integrated circuits
10/10/2001EP1143490A1 Semiconductor device with capacitor insulating film and method for fabricating the same
10/10/2001EP1143455A2 Nonvolatile semiconductor memory device
10/10/2001EP1142028A1 Slotted quantum well sensor
10/10/2001EP1142026A1 Power semiconductor switch
10/10/2001EP1142025A1 Power semiconductor element
10/10/2001EP1142023A1 Peripheral structure for monolithic power device
10/10/2001EP1142022A2 Semiconductor switches with evenly distributed fine control structures
10/10/2001EP1142019A1 Circuit assembly with at least one nanoelectronic component and method for producing the same
10/10/2001EP1142018A1 Semiconductor device having shared gate electrode and fabrication thereof
10/10/2001EP1142014A1 Peripheral transistor of a non-volatile memory
10/10/2001EP1142012A1 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
10/10/2001EP1142011A1 Devices with graded top oxide and graded drift region
10/10/2001EP1141670A1 Pressure sensor
10/10/2001EP0868745B1 Method of producing a neuron mos transistor on the basis of a cmos process
10/10/2001EP0864178A4 Trench-gated mosfet including integral temperature detection diode
10/10/2001EP0766870B1 Method of manufacturing a progammable semiconductor device in the form of an anti-fuse
10/10/2001CN1317225A Laminates for encapsulating devices
10/10/2001CN1317155A Zinc oxide films containing P-type dopant and process for preparing same
10/10/2001CN1317149A Non-uniform minority carrier lifetime distribution in high performance silicon power devices
10/10/2001CN1317106A Active matrix liquid crystal display and method for producing the same
10/10/2001CN1316781A Silicon insulator structure semiconductor device
10/10/2001CN1316769A Semiconductor manufacturing technology and semiconductor device manufacturing technology
10/10/2001CN1316767A Semiconductor manufacturing technology and semiconductor device manufacturing technology
10/09/2001US6301177 Internal power supply voltage generating circuit and the method for controlling thereof
10/09/2001US6301162 Single electron MOSFET memory device and method
10/09/2001US6301158 Nonvolatile semiconductor memory device
10/09/2001US6301155 Non-volatile semiconductor memory device and method of reading same
10/09/2001US6301145 Ferroelectric memory and method for accessing same
10/09/2001US6300988 Liquid crystal display apparatus having patterned insulating layer formed over a substrate except for a region on the gate electrode
10/09/2001US6300927 Display device
10/09/2001US6300819 Circuit including forward body bias from supply voltage and ground nodes
10/09/2001US6300669 Semiconductor integrated circuit device and method of designing same
10/09/2001US6300668 High resistance integrated circuit resistor
10/09/2001US6300666 Method for forming a frontside contact to the silicon substrate of a SOI wafer in the presence of planarized contact dielectrics
10/09/2001US6300664 Semiconductor device and method of fabricating the same
10/09/2001US6300662 Electronic programmable read-only-memory including a charge storage capacitor coupled to the gate electrode
10/09/2001US6300660 Bipolar transistor that can be fabricated in CMOS
10/09/2001US6300659 Thin-film transistor and fabrication method for same
10/09/2001US6300657 Self-aligned dynamic threshold CMOS device
10/09/2001US6300656 Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types
10/09/2001US6300652 Memory cell configuration and method for its production
10/09/2001US6300649 Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
10/09/2001US6300648 Continuous amorphous silicon layer sensors using sealed metal back contact
10/09/2001US6300239 Method of manufacturing semiconductor device
10/09/2001US6300221 Method of fabricating nanoscale structures
10/09/2001US6300220 Process for fabricating isolation structure for IC featuring grown and buried field oxide
10/09/2001US6300212 Method of fabricating semiconductor device having memory capacitor including ferroelectric layer made of composite metal oxide
10/09/2001US6300210 Method of manufacturing a semiconductor device comprising a bipolar transistor
10/09/2001US6300208 Methods for annealing an integrated device using a radiant energy absorber layer
10/09/2001US6300207 Depleted sidewall-poly LDD transistor
10/09/2001US6300206 Method for manufacturing semiconductor device
10/09/2001US6300205 Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions
10/09/2001US6300203 Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors
10/09/2001US6300202 Selective removal of a metal oxide dielectric
10/09/2001US6300201 Method to form a high K dielectric gate insulator layer, a metal gate structure, and self-aligned channel regions, post source/drain formation
10/09/2001US6300198 Method for producing a vertical MOS-transistor
10/09/2001US6300197 Method of fabricating semiconductor device
10/09/2001US6300194 Method for manufacturing semiconductor integrated electronic memory devices having a virtual ground cells matrix
10/09/2001US6300193 Flash memory with nanocrystalline silicon film floating gate
10/09/2001US6300185 Polyacrystalline silicon film formation method
10/09/2001US6300184 Method of manufacturing a CMOS transistor
10/09/2001US6300183 Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
10/09/2001US6300182 Field effect transistor having dual gates with asymmetrical doping for reduced threshold voltage
10/09/2001US6300178 Semiconductor device with self-aligned contact and manufacturing method thereof
10/09/2001US6300177 Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials
10/09/2001US6300175 Method for fabricating thin film transistor
10/09/2001US6300171 Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure
10/09/2001US6300169 Method for manufacturing a pressure sensor
10/09/2001US6300149 Integrated circuit device manufacture
10/07/2001CA2343441A1 Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
10/04/2001WO2001073854A2 Variable capacitor with programmability
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