H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2001
10/25/2001	US20010034105 Technique for suppression of edge current in semiconductor devices
10/25/2001	US20010034102 Method for fabricating nonvolatile semiconductor memory device
10/25/2001	US20010034101 Method for producing semiconductor device
10/25/2001	US20010034098 Method for manufacturing semiconductor device
10/25/2001	US20010034091 Methods of forming transistors
10/25/2001	US20010034090 Methods for forming a gate dielectric film of a semiconductor device
10/25/2001	US20010034088 Method of manufacturing a semiconductor device
10/25/2001	US20010034087 Semiconductor device and method of making same
10/25/2001	US20010034078 Reduced mask chalcogenide memory
10/25/2001	US20010034072 Self-organized formation of quantum dots of a material on a substrate
10/25/2001	US20010033264 Liquid crystal device, electro-optical device, and projection display device employing the same
10/25/2001	US20010033210 Microstrip line, method for fabricating the same, inductor element, and RF semiconductor device
10/25/2001	US20010033027 Graded layer for use in semiconductor circuits and method for making same
10/25/2001	US20010033007 Solid state image sensor and method for fabricating the same
10/25/2001	US20010033006 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide
10/25/2001	US20010033001 Semiconductor integrated circuit device
10/25/2001	US20010033000 Field effect transistor structure with self-aligned raised source/drain extensions
10/25/2001	US20010032999 GaN-based compound semiconductor device
10/25/2001	US20010032998 Super-junction semiconductor device and method of manufacturing the same
10/25/2001	US20010032997 DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
10/25/2001	US20010032996 Nonvolatile semiconductor memory device
10/25/2001	US20010032995 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same
10/25/2001	US20010032990 Semiconductor device for load drive circuit
10/25/2001	US20010032986 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
10/25/2001	US20010032981 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
10/25/2001	US20010032980 Semiconductor device having a thin film field-effect transistor, liquid crystal display device, and production method thereof
10/25/2001	US20010032509 Acceleration sensor and process for the production thereof
10/25/2001	DE10054636A1 Semi conductor has structure suppresses a rise in the transmission resistance
10/25/2001	DE10018371A1 Semiconductor substrate manufacturing method e.g. for multiple-epitaxy device
10/25/2001	DE10017922A1 PN-diode for high switching rate - has transistor incorporated in anode of PN-diode for providing snap-back effect at high current levels
10/24/2001	WO2001080346A1 Semiconductor layer, solar cell using it, and production methods and applications therefor
10/24/2001	EP1148559A2 High speed semiconductor photodetector and method of fabricating the same
10/24/2001	EP1148557A2 Stacked capacitor and method of fabricating the stacked capacitor
10/24/2001	EP1148556A2 Split-gate flash memory element arrangement and method of erasing the same
10/24/2001	EP1148555A1 RESURF LDMOS field-effect transistor
10/24/2001	EP1148554A2 Heterojunction bipolar transistor and manufacturing method therefor
10/24/2001	EP1148374A2 Active matrix substrate
10/24/2001	EP1147561A1 Lateral thin-film soi device having a lateral drift region and method of making such a device
10/24/2001	EP1147559A1 Device providing protection against electrostatic discharges for microelectronic components on a soi-type substrate
10/24/2001	EP1147558A1 Analogue switch
10/24/2001	EP1147552A1 Field effect transistor structure with abrupt source/drain junctions
10/24/2001	EP1147551A1 Top gate thin-film transistor and method of producing the same
10/24/2001	EP1147550A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING SiGe HBTs
10/24/2001	EP1110067A4 Pressure sensor and method of forming the same
10/24/2001	EP0978159B1 Device for limiting electrical alternating currents, especially during short-circuits
10/24/2001	EP0800651B1 A micromechanical accelerometer
10/24/2001	CN2456314Y Quick restored diode by electrostatic induction
10/24/2001	CN1319256A Ferroelectric thin film of reduced tetragonality
10/24/2001	CN1319255A Single polysilicon flash EEPROM and method for making same
10/24/2001	CN1319233A Method and apparatus for providing embedded flash-EEPROM technology
10/24/2001	CN1318898A High-frequency power amplifier with bipolar transistor
10/24/2001	CN1318869A Method for making polysilicon-polysilicon/MOS stacked capacitor
10/24/2001	CN1318868A Electrooptical device, and its mfg. and electronic device
10/23/2001	US6308308 Semiconductor device using diode place-holders and method of manufacture thereof
10/23/2001	US6307807 Nonvolatile semiconductor memory
10/23/2001	US6307786 Nonvolatile semiconductor memory device having a hierarchial bit line structure
10/23/2001	US6307780 Semiconductor non-volatile storage
10/23/2001	US6307775 Deaprom and transistor with gallium nitride or gallium aluminum nitride gate
10/23/2001	US6307770 Nonvolatile semiconductor memory device and a method of fabricating the same
10/23/2001	US6307731 Oxygen inclusion layer containing precious and transition metals; etching, annealing, microfabrication
10/23/2001	US6307602 Method for manufacturing liquid crystal display capable of preventing electrical shorts between neighboring pixel electrodes and the liquid crystal display
10/23/2001	US6307452 Folded spring based micro electromechanical (MEM) RF switch
10/23/2001	US6307422 Circuit configuration having single-electron components, a method for its operation and use of the method for addition of binary numbers
10/23/2001	US6307322 Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
10/23/2001	US6307251 Semiconductor device having capacitance element and method of producing the same
10/23/2001	US6307246 Semiconductor resurf devices formed by oblique trench implantation
10/23/2001	US6307245 Semiconductor device
10/23/2001	US6307237 L-and U-gate devices for SOI/SOS applications
10/23/2001	US6307235 Another technique for gated lateral bipolar transistors
10/23/2001	US6307234 Complementary MOS semiconductor device
10/23/2001	US6307232 Semiconductor device having lateral high breakdown voltage element
10/23/2001	US6307231 Method of fabricating semiconductor device
10/23/2001	US6307228 Semiconductor device with perovskite capacitor and its manufacture method
10/23/2001	US6307226 Contact openings to electronic components having recessed sidewall structures
10/23/2001	US6307225 Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device
10/23/2001	US6307224 Double diffused mosfet
10/23/2001	US6307223 Complementary junction field effect transistors
10/23/2001	US6307221 InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures
10/23/2001	US6307220 Semiconductor device
10/23/2001	US6307216 Thin film transistor panels for liquid crystal displays
10/23/2001	US6307215 TFT array with photo-imageable insulating layer over address lines
10/23/2001	US6307214 Semiconductor thin film and semiconductor device
10/23/2001	US6306777 Flash memory having a treatment layer disposed between an interpoly dielectric structure and method of forming
10/23/2001	US6306743 Method for forming a gate electrode on a semiconductor substrate
10/23/2001	US6306742 Method for forming a high dielectric constant insulator in the fabrication of an integrated circuit
10/23/2001	US6306741 Method of patterning gate electrodes with high K gate dielectrics
10/23/2001	US6306740 Manufacture of field emission element
10/23/2001	US6306738 Modulation of gate polysilicon doping profile by sidewall implantation
10/23/2001	US6306728 Stable high voltage semiconductor device structure
10/23/2001	US6306720 Method for forming capacitor of mixed-mode device
10/23/2001	US6306719 Method for manufacturing a semiconductor device
10/23/2001	US6306717 Method of manufacturing an avalanche diode with an adjustable threshold
10/23/2001	US6306714 Method to form an elevated S/D CMOS device by contacting S/D through the contact of oxide
10/23/2001	US6306712 Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing
10/23/2001	US6306711 Method of fabricating a high-voltage lateral double diffused metal oxide semiconductor
10/23/2001	US6306710 Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer
10/23/2001	US6306709 Semiconductor device and manufacturing method thereof
10/23/2001	US6306705 Methods of forming capacitors, DRAM arrays, and monolithic integrated circuits
10/23/2001	US6306704 Nonvolatile ferroelectric memory
10/23/2001	US6306697 Low temperature polysilicon manufacturing process

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