H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2001
11/07/2001	EP0838092B1 Electrically erasable programmable rom memory cell array and a method of producing the same
11/07/2001	EP0748521B1 Over-erase detection in a low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
11/07/2001	EP0707744B1 Schottky barrier rectifier with mos trench
11/07/2001	CN2458736Y Terminal seat assembling device of improved high-power diode
11/07/2001	CN2458735Y Improved high-power rectifying element
11/07/2001	CN1321340A Lateral thin-film silicon-on-insulator (SOI) PMOS device having drain extension region
11/07/2001	CN1320969A Semiconductor device and mfg. method thereof
11/07/2001	CN1320968A Semiconductor device and mfg. method thereof
11/07/2001	CN1320928A Method for reading-out and storing ferroelectric transistor state, and storage array
11/07/2001	CN1320899A Display device
11/06/2001	US6314389 Time-domain circuit modeller
11/06/2001	US6314022 Nonvolatile semiconductor memory device and method for manufacturing the same, microcomputer-mixed flash memory and method for manufacturing the same
11/06/2001	US6314021 Nonvolatile semiconductor memory device and semiconductor integrated circuit
11/06/2001	US6313898 Liquid crystal display device having intermediate alignment film in a region between adjacent pixels
11/06/2001	US6313534 Ohmic electrode, method and multi-layered structure for making same
11/06/2001	US6313522 Semiconductor structure having stacked semiconductor devices
11/06/2001	US6313518 Porous silicon oxycarbide integrated circuit insulator
11/06/2001	US6313513 AC switch device used for switching AC circuit and AC switch circuit having the AC switch device
11/06/2001	US6313512 Low source inductance compact FET topology for power amplifiers
11/06/2001	US6313508 Semiconductor device of high-voltage CMOS structure and method of fabricating same
11/06/2001	US6313507 SOI semiconductor device capable of preventing floating body effect
11/06/2001	US6313506 Silicon-on-insulator field effect transistor
11/06/2001	US6313504 Vertical MOS semiconductor device
11/06/2001	US6313503 MNOS-type memory using single electron transistor and driving method thereof
11/06/2001	US6313502 Semiconductor device comprising a non-volatile memory which is erasable by means of UV irradiation
11/06/2001	US6313501 Nonvolatile memory, cell array thereof, and method for sensing data therefrom
11/06/2001	US6313500 Split gate memory cell
11/06/2001	US6313498 Flash memory cell with thin floating gate with rounded side wall, and fabrication process
11/06/2001	US6313495 Stack capacitor with improved plug conductivity
11/06/2001	US6313491 Semiconductor memory having cell including transistor and ferroelectric capacitor
11/06/2001	US6313489 Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
11/06/2001	US6313488 Bipolar transistor having a low doped drift layer of crystalline SiC
11/06/2001	US6313487 Vertical channel floating gate transistor having silicon germanium channel layer
11/06/2001	US6313486 Floating gate transistor having buried strained silicon germanium channel layer
11/06/2001	US6313485 Gate-controlled thyristor
11/06/2001	US6313482 Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
11/06/2001	US6313479 Self-organized formation of quantum dots of a material on a substrate
11/06/2001	US6313478 Single electron device using ultra-thin metal film and method for fabricating the same
11/06/2001	US6313036 Method for producing semiconductor device
11/06/2001	US6313032 Method for manufacturing a salicide transistor, semiconductor storage, and semiconductor device
11/06/2001	US6313021 PMOS device having a layered silicon gate for improved silicide integrity and enhanced boron penetration resistance
11/06/2001	US6313020 Semiconductor device and method for fabricating the same
11/06/2001	US6313019 Y-gate formation using damascene processing
11/06/2001	US6313018 Process for fabricating semiconductor device including antireflective etch stop layer
11/06/2001	US6313006 Method of field implantation
11/06/2001	US6313002 Ion-implantation method applicable to manufacture of a TFT for use in a liquid crystal display apparatus
11/06/2001	US6313001 Method for semiconductor manufacturing
11/06/2001	US6313000 Process for formation of vertically isolated bipolar transistor device
11/06/2001	US6312999 Method for forming PLDD structure with minimized lateral dopant diffusion
11/06/2001	US6312997 Low voltage high performance semiconductor devices and methods
11/06/2001	US6312996 Semiconductor device and method for fabricating the same
11/06/2001	US6312995 MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
11/06/2001	US6312994 Semiconductor device and method for fabricating the same
11/06/2001	US6312993 High speed trench DMOS
11/06/2001	US6312992 Thin film transistor and method for fabricating the same
11/06/2001	US6312991 Elimination of poly cap easy poly 1 contact for NAND product
11/06/2001	US6312981 Method for manufacturing semiconductor device
11/06/2001	US6312980 Programmable triangular shaped device having variable gain
11/06/2001	US6312970 Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes
11/06/2001	US6312968 Method for fabricating an electrically addressable silicon-on-sapphire light valve
11/06/2001	US6312833 Multilayered wiring layer
11/06/2001	US6312829 Epoxy resin and resin-sealed type semiconductor apparatus
11/06/2001	US6312617 Conductive isostructural compounds
11/06/2001	CA2225844C Field effect transistor
11/01/2001	WO2001082386A1 Edge-emitting light-emitting semiconductor device and method of manufacture thereof
11/01/2001	WO2001082380A2 Power semiconductor device having a trench gate electrode and method of making the same
11/01/2001	WO2001082379A1 Semiconductor device
11/01/2001	WO2001082360A1 Technique for suppression of edge current in semiconductor devices
11/01/2001	WO2001082359A2 Method of making a semiconductor device having a recessed insulating layer of varying thickness
11/01/2001	WO2001082350A1 A method and apparatus for selectively oxidizing a silicon/metal composite film stack
11/01/2001	WO2001082333A2 Homogeneous gate oxide thickness for vertical transistor structures
11/01/2001	WO2001081908A1 Field effect transistor device for ultra-fast nucleic acid sequencing
11/01/2001	WO2001081896A1 An ultra-fast nucleic acid sequencing device and a method for making and using the same
11/01/2001	WO2000039858A8 Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
11/01/2001	US20010036755 Method of fabricating semiconductor device
11/01/2001	US20010036752 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
11/01/2001	US20010036733 Method of fabricating thin-film transistor
11/01/2001	US20010036732 Method of manufacturing semiconductor device having minute gate electrodes
11/01/2001	US20010036731 Process for making planarized silicon fin device
11/01/2001	US20010036728 Method of manufacturing semiconductor device
11/01/2001	US20010036713 Sidewall process and method of implantation for improved CMOS with benefit of low CGD, improved doping profiles, and insensitivity to chemical processing
11/01/2001	US20010036712 A method of producing a semiconductor device having a source drain region of small junction depth
11/01/2001	US20010036710 SOI structure semiconductor device and a fabrication method thereof
11/01/2001	US20010036704 Trench semiconductor device manufacture with a thicker upper insulating layer
11/01/2001	US20010036696 Lateral patterning
11/01/2001	US20010036694 Semiconductor device and method of manufacturing it
11/01/2001	US20010036693 Shielded channel transistor structure with embedded source/drain junctions
11/01/2001	US20010036692 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
11/01/2001	US20010036690 Semiconductor device and method of manufacturing the same
11/01/2001	US20010036561 Device on a receptor substrate two active layers formed by transferring a multicomponent transfer unit from a thermal transfer element comprising the transfer unit and a substrate; organic electroluminescent device
11/01/2001	US20010036107 Nonvolatile semiconductor memory, method of reading from and writing to the same and method of manufacturing the same
11/01/2001	US20010036106 Nonvolatile semiconductor memory
11/01/2001	US20010036105 Nonvolatile semiconductor memory device
11/01/2001	US20010036104 Nonvolatile semiconductor memory device for storing multivalued data
11/01/2001	US20010036101 Memory cell configuration
11/01/2001	US20010035919 Display device
11/01/2001	US20010035911 Radiation detector
11/01/2001	US20010035774 Semiconductor integrated circuit
11/01/2001	US20010035586 Chip size package semiconductor device without an interposer and method of forming the same
11/01/2001	US20010035580 Semiconductor device and its manufacturing method

1 ... 1756 1757 1758 1759 1760 1761 1762 1763 1764 1765 1766 1767 1768 1769 1770 1771 1772 1773 1774 1775 1776 ... 2182