Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2001
11/01/2001US20010035578 Thermal conducting trench in a semiconductor structure and method for forming the same
11/01/2001US20010035565 Power transistor
11/01/2001US20010035561 Semiconductor configuration
11/01/2001US20010035560 Diode and method for manufacturing the same
11/01/2001US20010035558 Sacrificial spacer for integrated circuit transistors
11/01/2001US20010035557 Methods for fabricating CMOS integrated circuits including a source/drain plug
11/01/2001US20010035556 Display apparatus and manufacture method thereof
11/01/2001US20010035554 Semiconductor device and the method of manufacturing the same
11/01/2001US20010035553 Semiconductor device and method of manufacturing thereof
11/01/2001US20010035551 Method of fabricating a stack capacitor DRAM
11/01/2001US20010035548 Dynamic random access memory
11/01/2001US20010035541 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures
11/01/2001US20010035538 Charge coupled device having charge accumulating layer free from tow-dimensional effect under miniaturization and process for fabrication thereof
11/01/2001US20010035528 Method of fabricating thin-film transistor
11/01/2001US20010035527 Active matrix substrate and manufacturing method thereof
11/01/2001US20010035526 Semiconductor device and method of fabricating thereof
10/2001
10/31/2001EP1150356A1 Transistor with integrated photodetector for conductivity modulation
10/31/2001EP1150353A2 Using lightly doped resistor for output stage electrostatic discharge protection
10/31/2001EP1150255A2 Method of generating mesh and storage medium storing mesh generating program
10/31/2001EP1150221A2 Semiconductor device simulation apparatus as well as method and storage medium storing simulation program thereof
10/31/2001EP1150127A2 Method for determining a unique solution for FET equivalent circuit model parameters
10/31/2001EP1149423A1 Method for printing of transistor arrays on plastic substrates
10/31/2001EP1149421A1 Femfet device and method for producing same
10/31/2001EP1149420A1 Integrated circuit
10/31/2001EP1149409A2 Method for forming a silicide region on a silicon body
10/31/2001EP0838088B1 Process for manufacturing an integrated cmos circuit
10/31/2001DE10120030A1 Lateral semiconductor device e.g. lateral super-junction MOSFET, has loop layer formed of zones of alternating conductivity types
10/31/2001DE10119502A1 Semiconductor device e.g. for motor vehicle air-conditioning unit, has insulating base mounted on the drain (main current) electrode and a connection zone covering the wiring joining the main current electrode
10/31/2001DE10019408A1 Field-effect transistor (FET), esp. for application as sensor or acceleration sensor, has at least one drain zone and one source zone separated from one another via at least one channel zone
10/31/2001CN1320277A Electronic switching device with at least two semiconductor components
10/31/2001CN1320274A Voltage-cycling recovery of process-damaged ferroelectric films
10/31/2001CN1319895A Semconductor device and making method thereof
10/31/2001CN1319888A Heat conduction itensified semicondcutor structure and making process
10/31/2001CN1319884A Processaable isolation layer grid inlay technology used in sub 0.05 micrometer MOS device
10/31/2001CN1319881A Method for forming self-aligning contact welding disc in metal inlay grid technology
10/31/2001CN1319879A Semiconductor device and making method thereof
10/31/2001CN1319833A Active matrix type LCD device
10/31/2001CN1319832A Electric lighting device, its making method and electronic equipment
10/31/2001CN1319781A Semiconductor display device and making method thereof
10/31/2001CN1074168C Silicon semiconductor diode chip of all tangent plane junction glass passivation and making method
10/30/2001US6310933 Charge transferring device and charge transferring method which can reduce floating diffusion capacitance
10/30/2001US6310798 Semiconductor memory and method for manufacture thereof
10/30/2001US6310670 Thin-film transistor (TFT) liquid crystal display (LCD) devices having field-induced LDD regions
10/30/2001US6310668 LCD wherein opening in source electrode overlaps gate electrode to compensate variations in parasitic capacitance
10/30/2001US6310667 Liquid crystal display device and fabrication method thereof
10/30/2001US6310598 Matrix type liquid-crystal display unit
10/30/2001US6310380 Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
10/30/2001US6310378 High voltage thin film transistor with improved on-state characteristics and method for making same
10/30/2001US6310377 Semiconductor device having an SOI structure
10/30/2001US6310376 Semiconductor storage device capable of improving controllability of density and size of floating gate
10/30/2001US6310374 Nonvolatile semiconductor memory device having extracting electrode
10/30/2001US6310373 Metal insulator semiconductor structure with polarization-compatible buffer layer
10/30/2001US6310372 Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
10/30/2001US6310371 Fingerprint sensor chip
10/30/2001US6310369 Charge-to-voltage converter with adjustable conversion factor
10/30/2001US6310368 Semiconductor device and method for fabricating same
10/30/2001US6310367 MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer
10/30/2001US6310365 Surface voltage sustaining structure for semiconductor devices having floating voltage terminal
10/30/2001US6310363 Thin-film transistor and semiconductor device using thin-film transistors with N and P impurities in the source and drain regions
10/30/2001US6310362 Electro-optical device
10/30/2001US6310359 Structures containing quantum conductive barrier layers
10/30/2001US6309975 Methods of making implanted structures
10/30/2001US6309953 Process for producing a semiconductor device with a roughened semiconductor surface
10/30/2001US6309952 Process for forming high voltage junction termination extension oxide
10/30/2001US6309941 Methods of forming capacitors
10/30/2001US6309940 Latch-up resistant CMOS structure
10/30/2001US6309939 Method of manufacturing a semiconductor device
10/30/2001US6309938 Deuterated bipolar transistor and method of manufacture thereof
10/30/2001US6309937 Method of making shallow junction semiconductor devices
10/30/2001US6309933 Method of fabricating T-shaped recessed polysilicon gate transistors
10/30/2001US6309932 Process for forming a plasma nitride film suitable for gate dielectric application in sub-0.25 μm technologies
10/30/2001US6309929 Method of forming trench MOS device and termination structure
10/30/2001US6309928 Split-gate flash cell
10/30/2001US6309920 Bipolar transistor which can be controlled by field effect and method for producing the same
10/30/2001US6309919 Method for fabricating a trench-gated vertical CMOS device
10/30/2001US6309918 Manufacturable GaAs VFET process
10/30/2001US6309917 Thin film transistor manufacturing method and thin film transistor
10/30/2001US6309907 Method of fabricating transistor with silicon oxycarbide gate
10/30/2001US6309906 Photovoltaic cell and method of producing that cell
10/30/2001US6309898 Method for manufacturing semiconductor device capable of improving manufacturing yield
10/30/2001US6309896 Method of manufacturing a ferroelectric film
10/30/2001US6309713 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
10/30/2001US6309701 Fluorescent nanocrystal-labeled microspheres for fluorescence analyses
10/30/2001US6309602 Stacked, reconfigurable system for electrophoretic transport of charged materials
10/30/2001US6309601 Scanning optical detection system
10/30/2001US6308577 Circuit and method of compensating for membrane stress in a sensor
10/30/2001US6308568 Angular velocity sensor
10/30/2001CA2098919C Semiconductor device
10/25/2001WO2001080320A1 Diode and method for producing the same
10/25/2001WO2001080310A1 Method of manufacturing a semiconductor device
10/25/2001WO2001080306A2 Automated process monitoring and analysis system for semiconductor processing
10/25/2001WO2001080298A1 Uv pretreatment process for ultra-thin oxynitride for formation of silicon nitride films
10/25/2001WO2001080293A1 Method of crystallising a semiconductor film
10/25/2001WO2001080287A2 Process for fabricating thin film transistors
10/25/2001WO2001080256A1 Laminated body, capacitor, electronic part, and method and device for manufacturing the laminated body, capacitor, and electronic part
10/25/2001WO2001080247A1 Semiconductor device
10/25/2001WO2001079578A1 Silicon reagents and low temperature cvd method of forming silicon-containing gate dielectric materials using same
10/25/2001US20010034118 Method for defining windows with defferent etching depths simultaneously
10/25/2001US20010034116 Semiconductor device with schottky contact and method for forming the same
10/25/2001US20010034109 Trench seimconductor devices reduced trench pitch
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