Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/04/2014CN203631563U 薄膜晶体管、阵列基板及显示装置 Thin film transistor array substrate and a display device
06/04/2014CN203631562U 新型绝缘栅双极晶体管的源区结构 The new structure of the source region of the insulated gate bipolar transistor
06/04/2014CN203631561U 一种高反压双极型功率晶体管 A high-power bipolar transistor backpressure
06/04/2014CN203631560U 双极pnp晶体管 Pnp bipolar transistor
06/04/2014CN203631559U 双极npn晶体管 Npn bipolar transistor
06/04/2014CN203631558U 沟槽型绝缘栅双极晶体管的沟槽栅结构 Trench gate structure of the groove-type insulated gate bipolar transistor
06/04/2014CN103843146A Semiconductor device
06/04/2014CN103843145A Semiconductor device
06/04/2014CN103843144A Electropositive metal containing layers for semiconductor applications
06/04/2014CN103843143A Tungsten gates for non-planar transistors
06/04/2014CN103843142A Igbt and manufacturing method therefor
06/04/2014CN103843141A Semiconductor device
06/04/2014CN103843120A Vertical transistor having an asymmetric gate
06/04/2014CN103843119A Non-planar transitor fin fabrication
06/04/2014CN103843083A Crystal and laminate
06/04/2014CN103842830A Acceleration sensor
06/04/2014CN103840015A Super-junction Schottky diode
06/04/2014CN103840014A Groove type schottky diode device structure and process realization method
06/04/2014CN103840013A Bidirectional TVS and manufacturing method of bidirectional TVS
06/04/2014CN103840012A Junction field-effect transistor (JFET) and preparation method thereof
06/04/2014CN103840011A Zinc-oxide-base amorphous oxide semiconductor thin film transistor and manufacturing method thereof
06/04/2014CN103840010A Thin film transistor and fabrication method thereof
06/04/2014CN103840009A Pixel structure
06/04/2014CN103840008A High-voltage LDMOS device based on BCD process and manufacturing process
06/04/2014CN103840007A VDMOS of shield grid structure
06/04/2014CN103840006A Fin type field effect transistor with GeSn channel and forming method thereof
06/04/2014CN103840005A Fin type field effect transistor with SiGeSn source drain and forming method thereof
06/04/2014CN103840004A Fin type field effect transistor with SiGeSn source drain and forming method thereof
06/04/2014CN103840003A Double-gate graphene transistor with aluminum oxide as gate dielectric and manufacturing method thereof
06/04/2014CN103840002A Semiconductor device having supporter and method of forming the same
06/04/2014CN103840001A High voltage drain-extended mosfet having extra drain-od addition
06/04/2014CN103840000A Semiconductor device with reduced miller capacitance and fabrication method thereof
06/04/2014CN103839999A Structure and preparation method of power field effect transistor
06/04/2014CN103839998A LDMOS device and manufacture method thereof
06/04/2014CN103839997A Planar DMOS device, preparation method thereof, and electronic device
06/04/2014CN103839996A Groove grid high-voltage device based on composite drain electrode and method for manufacturing same
06/04/2014CN103839995A Power semiconductor device
06/04/2014CN103839994A IGBT structure and manufacturing method thereof
06/04/2014CN103839993A Latch-up prevention terminal area for insulated gate bipolar transistor
06/04/2014CN103839992A Structure and preparation method of power device - TI - IGBT
06/04/2014CN103839991A Weak current connecting structure formed by terminal and active region and design method thereof
06/04/2014CN103839990A Buffer layer structure of IGBT and manufacturing method thereof
06/04/2014CN103839989A Low-voltage IGBT with buffer layer and method for manufacturing low-voltage IGBT with buffer layer
06/04/2014CN103839988A Structure of EMPT-TI-IGBT device and manufacturing method thereof
06/04/2014CN103839987A Structure and manufacturing method of power device MPT-TI-IGBT
06/04/2014CN103839986A Insulated gate bipolar transistor
06/04/2014CN103839985A Lateral parasitic PNP device in germanium-silicon HBT process and manufacturing method thereof
06/04/2014CN103839984A InP/high kappa gate medium stack structure and preparation method thereof
06/04/2014CN103839983A Semiconductor device and manufacturing method thereof
06/04/2014CN103839982A Planar gate super-junction product gate layout structure
06/04/2014CN103839981A Semiconductor device and method for manufacturing same
06/04/2014CN103839980A MOSFET with SiGeSn source drain and forming method thereof
06/04/2014CN103839979A Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
06/04/2014CN103839978A Terminal structure of middle-high pressure groove typed power device and manufacturing method thereof
06/04/2014CN103839977A Pin super-junction structure
06/04/2014CN103839976A Gallium arsenide substrate structure on silicon-based insulator and preparation method thereof
06/04/2014CN103839975A Low-depth connection groove and manufacture method
06/04/2014CN103839948A Thin film transistor array substrate for digital X-ray detector
06/04/2014CN103839945A Semiconductor device and SRAM device
06/04/2014CN103839944A Semiconductor devices including stressor in recess and methods of forming same
06/04/2014CN103839943A Semiconductor device
06/04/2014CN103839892A Semiconductor structure and manufacturing method thereof
06/04/2014CN103839834A Semiconductor device and manufacturing method thereof
06/04/2014CN103839832A Fin type field effect transistor with GeSn source drain and forming method thereof
06/04/2014CN103839831A MOSFET with GeSn channel and forming method thereof
06/04/2014CN103839830A MOSFET with SiGeSn channel and forming method thereof
06/04/2014CN103839829A Fin type field effect transistor with SiGeSn channel and forming method thereof
06/04/2014CN103839828A MOSFET with SiGeSn channel and forming method thereof
06/04/2014CN103839827A MOSFET with SiGeSn source drain and forming method thereof
06/04/2014CN103839826A Low-temperature polycrystalline silicon thin film transistor, array substrate and manufacturing method of array substrate
06/04/2014CN103839825A Low-temperature polycrystalline silicon thin film transistor, array substrate and manufacturing method of array substrate
06/04/2014CN103839822A Fin type field effect transistor and forming method thereof
06/04/2014CN103839821A Transistor and manufacturing method thereof
06/04/2014CN103839819A Semiconductor device and manufacture method thereof
06/04/2014CN103839817A Semiconductor device and manufacturing method thereof
06/04/2014CN103839816A Semiconductor device and manufacturing method thereof
06/04/2014CN103839813A MOS transistor and method for forming same
06/04/2014CN103839812A Semiconductor device and method for preparing same
06/04/2014CN103839810A Fin field effect transistor chip and manufacturing method thereof
06/04/2014CN103839807A Trench DMOS transistor manufacturing method and trench DMOS transistor
06/04/2014CN103839806A Semiconductor device and manufacturing method thereof
06/04/2014CN103839801A Schottky barrier diode and manufacturing method thereof
06/04/2014CN103839785A Method for forming photo composition
06/04/2014CN103839780A Trenched power device and manufacturing method thereof
06/04/2014CN103839775A GeSn layer of selected area and method for forming GeSn layer of selected area
06/04/2014CN103839774A SiGeSn layer and forming method thereof
06/04/2014CN103839604A Heat conducting film, manufacturing method of heat conducting film, and array substrate
06/04/2014CN102804359B Semiconductor device
06/04/2014CN102623343B Side wall hollow layer structure for semiconductor device and preparation method for side wall hollow layer structure
06/04/2014CN102593154B Trench gate diode with P-type buried layer structure
06/04/2014CN102592999B Method for optimizing thickness of channel layer of quantum well high electron mobility transistor (HEMT) appliance
06/04/2014CN102543996B Pixel structure and manufacturing method thereof
06/04/2014CN102487009B Manufacturing method of source electrode and drain electrode of N metal-oxide semiconductor field effect transistor (MOS) device
06/04/2014CN102403226B Transistor and manufacturing method thereof
06/04/2014CN102237279B Oxide terminated trench MOSFET with three or four masks
06/04/2014CN102165594B Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate
06/04/2014CN102104074B Semiconductor device and manufacturing method thereof
06/04/2014CN102084512B Switching element
06/04/2014CN102074571B Semiconductor device and method of manufacturing semiconductor device
06/04/2014CN101971348B Semiconductor device and display apparatus
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