Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/14/2014CN102593175B 栅总线加强的沟槽mos器件及其制造方法 Mos device gate bus trench, and a manufacturing method for strengthened
05/14/2014CN102569364B 一种高迁移率衬底结构及其制备方法 A high-mobility substrate structure and preparation method
05/14/2014CN102544005B 降低寄生晶体管导通的功率组件及其制作方法 Reduce the parasitic transistor is turned on the power module and manufacturing method thereof
05/14/2014CN102446974B Finfet及其制造方法 Finfet its manufacturing method
05/14/2014CN102422416B 具备具有二极管区和igbt区的半导体基板的半导体装置 A semiconductor device having a diode region and the semiconductor substrate region igbt
05/14/2014CN102334190B 半导体装置及其制造方法 Semiconductor device and manufacturing method
05/14/2014CN102315256B 双极接面晶体管装置 Bipolar junction transistor device
05/14/2014CN102254899B 具有对准标记的半导体结构及其形成方法 The semiconductor structure and method of forming an alignment mark
05/14/2014CN102194876B 半导体元件及其制作方法 Semiconductor device and manufacturing method thereof
05/14/2014CN102177598B 有机薄膜晶体管用化合物和使用其的有机薄膜晶体管 The organic thin film transistor using an organic compound and a thin film transistor using its
05/14/2014CN102160179B 半导体装置及其制造方法 Semiconductor device and manufacturing method
05/14/2014CN102037547B 形成含纳米丛集介电层的方法及包括上述介电层的装置 The method for forming a dielectric layer containing nanoclusters and includes means for the dielectric layer
05/14/2014CN102024845B 半导体元件用外延基板、肖特基接合结构以及肖特基接合结构的漏电流抑制方法 The epitaxial substrate for semiconductor device, the leakage current of the Schottky junction structure, and a Schottky junction structure inhibiting
05/14/2014CN101981700B 用于碳化硅器件的双保护环边缘终端和制造具有双保护环边缘终端的碳化硅器件的方法 The method of double guard ring edge termination and manufacture silicon carbide devices with double guard ring edge termination of SiC devices
05/14/2014CN101960572B 具有空腔界定栅极的装置及其制造方法 With a device and method for manufacturing the gate electrode defining a cavity
05/14/2014CN101714546B 显示装置及其制造方法 Display device and method of manufacturing
05/14/2014CN101582457B 半导体二极管 Diodes
05/14/2014CN101442074B 沟槽金属氧化物场效应晶体管及其制造方法 A trench metal-oxide field effect transistor and manufacturing method thereof
05/14/2014CN101295733B 半导体元件 Semiconductor components
05/13/2014US8724393 Thermally assisted flash memory with diode strapping
05/13/2014US8724072 Liquid crystal display device
05/13/2014US8723761 Pixel circuit, display device, and method of driving pixel circuit
05/13/2014US8723744 Method for making contactless portable devices with dielectric bridge and portable devices
05/13/2014US8723503 Vertical type sensor
05/13/2014US8723338 Integrated circuit packaging system with array contacts and method of manufacture thereof
05/13/2014US8723336 Semiconductor light emitting device and method for manufacturing same
05/13/2014US8723335 Semiconductor circuit structure and method of forming the same using a capping layer
05/13/2014US8723329 In-package fly-by signaling
05/13/2014US8723321 Copper interconnects with improved electromigration lifetime
05/13/2014US8723315 Flip chip package
05/13/2014US8723313 Semiconductor package structure and method for manufacturing the same
05/13/2014US8723312 Assembly of a wire element with a microelectronic chip with a groove comprising at least one bump securing the wire element
05/13/2014US8723296 Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
05/13/2014US8723289 Interconnection wiring structure of a semiconductor memory device
05/13/2014US8723281 Access transistor with a buried gate
05/13/2014US8723280 Hybrid MEMS bump design to prevent in-process and in-use stiction
05/13/2014US8723279 MEMS sensor, and MEMS sensor manufacturing method
05/13/2014US8723278 Sensor element array and method of fabricating the same
05/13/2014US8723277 Tunable MEMS device and method of making a tunable MEMS device
05/13/2014US8723276 Semiconductor structure with lamella defined by singulation trench
05/13/2014US8723275 Semiconductor device with metal silicides having different phases
05/13/2014US8723268 N-channel and P-channel end-to-end finFET cell architecture with relaxed gate pitch
05/13/2014US8723266 Pinch-off control of gate edge dislocation
05/13/2014US8723259 Silicon carbide semiconductor device
05/13/2014US8723258 Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistor
05/13/2014US8723257 ESD protection device having reduced equivalent capacitance
05/13/2014US8723256 Semiconductor device and fabricating method thereof
05/13/2014US8723254 Semiconductor device and manufacturing method thereof
05/13/2014US8723253 Semiconductor device and method for manufacturing same
05/13/2014US8723252 Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
05/13/2014US8723251 Semiconductor device and method for forming the same
05/13/2014US8723249 Non-volatile memory
05/13/2014US8723248 Nonvolatile semiconductor storage device
05/13/2014US8723247 Semiconductor memory device and method for manufacturing same
05/13/2014US8723246 Nonvolatile semiconductor memory and manufacturing method thereof
05/13/2014US8723245 Nonvolatile memory device
05/13/2014US8723240 Semiconductor device, manufacturing method for the same, and electronic device
05/13/2014US8723238 Method of forming a transistor and structure therefor
05/13/2014US8723237 Method for designing a semiconductor device including stress films
05/13/2014US8723236 FinFET device and method of manufacturing same
05/13/2014US8723235 JFET devices with increased barrier height and methods of making the same
05/13/2014US8723234 Semiconductor device having a diode forming area formed between a field-effect transistor forming area and a source electrode bus wiring or pad
05/13/2014US8723229 Semiconductor device and method of manufacturing the device
05/13/2014US8723227 Heterojunction compound semiconductor protection clamps and methods of forming the same
05/13/2014US8723226 Manufacturable enhancement-mode group III-N HEMT with a reverse polarization cap
05/13/2014US8723223 Hybrid Fin field-effect transistors
05/13/2014US8723220 Semiconductor device
05/13/2014US8723219 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
05/13/2014US8723218 Silicon carbide rectifier
05/13/2014US8723204 Polymeric wavelength converting elements
05/13/2014US8723192 Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
05/13/2014US8723191 Electronic device which performs as light emitting diode and solar cell
05/13/2014US8723190 Light emitting device having a patterned conductive layer with at least a passivated side surface
05/13/2014US8723186 Ionic junction for radiation detectors
05/13/2014US8723185 Reducing wafer distortion through a high CTE layer
05/13/2014US8723183 Image display system having pixels with common electrodes
05/13/2014US8723182 Semiconductor device and method of manufacturing the same
05/13/2014US8723181 Stacked transistors and electronic devices including the same
05/13/2014US8723179 Thin film transistor panel having an etch stopper on semiconductor
05/13/2014US8723178 Integrated field effect transistors with high voltage drain sensing
05/13/2014US8723177 Electrical test structure for devices employing high-k dielectrics or metal gates
05/13/2014US8723176 Semiconductor device
05/13/2014US8723175 Oxide semiconductor field effect transistor and method for manufacturing the same
05/13/2014US8723173 Semiconductor device, power circuit, and manufacturing method of semiconductor device
05/13/2014US8723172 Display device, thin film transistor array substrate and thin film transistor having oxide semiconductor
05/13/2014US8723170 TFT, display apparatus including TFT, and organic light-emitting display apparatus including TFT
05/13/2014US8723168 Display, method of manufacturing the same, and electronic unit
05/13/2014US8723162 Nanowire tunnel field effect transistors
05/13/2014US8723160 Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
05/13/2014US8723158 Light emitting diode, light emitting device package including the same and lighting system
05/13/2014US8723154 Integration of an amorphous silicon resistive switching device
05/13/2014US8723153 Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same
05/13/2014US8723151 Front to back resistive random access memory cells
05/13/2014US8723150 Semiconductor memory device having a reversibly variable resistance layer
05/13/2014US8722547 Etching high K dielectrics with high selectivity to oxide containing layers at elevated temperatures with BC13 based etch chemistries
05/13/2014US8722533 Semiconductor device and manufacturing method thereof
05/13/2014US8722523 Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure
05/13/2014US8722518 Methods for protecting patterned features during trench etch
05/13/2014US8722497 Silicon carbide semiconductor device and method for producing the same
05/13/2014US8722495 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
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