Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/03/2014US8741704 Metal oxide semiconductor (MOS) device with locally thickened gate oxide
06/03/2014US8741702 Method for manufacturing semiconductor device
06/03/2014US8741693 Method for manufacturing package structure with micro-electromechanical element
06/03/2014US8741448 Fullerene derivatives and optoelectronic devices utilizing the same
06/03/2014US8740047 Method of manufacturing electronic apparatus, electronic component-mounting board, and method of manufacturing the same
05/2014
05/30/2014WO2014082095A1 Device architecture and method for improved packing of vertical field effect devices
05/30/2014WO2014082030A1 Optical tilted charge devices and techniques
05/30/2014WO2014081815A1 Schottky diodes and method of manufacturing the same
05/30/2014WO2014081488A1 Dummy fin formation by gas cluster ion beam
05/30/2014WO2014081484A1 Vertical stacking of graphene in a field-effect transistor
05/30/2014WO2014081066A1 Super-junction trench mosfet
05/30/2014WO2014081001A1 Device and method for manufacturing same
05/30/2014WO2014080996A1 Oxide semiconductor thin film, method for producing same, and thin film transistor
05/30/2014WO2014080933A1 Electrode used in display device or input device, and sputtering target for use in electrode formation
05/30/2014WO2014080930A1 Liquid crystal display device
05/30/2014WO2014080826A1 Display apparatus
05/30/2014WO2014080825A1 Semiconductor device and display device
05/30/2014WO2014080820A1 Schottky barrier diode and method for manufacturing same
05/30/2014WO2014080759A1 Pressure sensor
05/30/2014WO2014080575A1 Method for treating metal surface with thiol
05/30/2014WO2014080471A1 Semiconductor device
05/30/2014WO2014079381A1 Junction field-effect transistor and preparation method therefor
05/30/2014WO2014079218A1 Strip-shaped gate modulated tunnel field effect transistor and method of preparing same
05/29/2014US20140147983 Esd protection device and method
05/29/2014US20140147982 Manufacturing method of semiconductor device
05/29/2014US20140147981 Inducement of Strain in a Semiconductor Layer
05/29/2014US20140147979 Vertical Gate LDMOS Device
05/29/2014US20140147977 Process for fabricating an enhancement mode heterojunction transistor
05/29/2014US20140147976 Exposure mask and method of manufacturing a substrate using the exposure mask
05/29/2014US20140147969 Manufacturing method of semiconductor device
05/29/2014US20140147968 Method for manufacturing semiconductor device
05/29/2014US20140147967 Method of manufacturing oxide thin film transistor
05/29/2014US20140147966 Semiconductor device, display device, and production method for semiconductor device and display device
05/29/2014US20140147948 Thin film transistor, manufacturing method of same, and display device
05/29/2014US20140147650 High quality group-iii metal nitride crystals, mehods of making, and methods of use
05/29/2014US20140146035 Active matrix display device
05/29/2014US20140145747 Light activated test connections
05/29/2014US20140145314 Semiconductor structure with beryllium oxide
05/29/2014US20140145313 Method of making a semiconductor device using a bottom antireflective coating (barc) layer
05/29/2014US20140145312 Semiconductor structure with rare earth oxide
05/29/2014US20140145310 Thin film device, method of manufacturing the same, and method of manufacturing display
05/29/2014US20140145309 Systems For The Recycling of Wire-Saw Cutting Fluid
05/29/2014US20140145307 Seal Ring Structure with Metal-Insulator-Metal Capacitor
05/29/2014US20140145302 Mim capacitor and fabrication method
05/29/2014US20140145296 Semiconductor Device with an Edge Termination Structure Having a Closed Vertical Trench
05/29/2014US20140145295 Double density semiconductor fins and method of fabrication
05/29/2014US20140145292 Semiconductor Device With Junction Termination Extension Structure On Mesa And Method Of Fabricating The Same
05/29/2014US20140145291 Power semiconductor device
05/29/2014US20140145290 High-voltage schottky diode and manufacturing method thereof
05/29/2014US20140145289 Schottky structure employing central implants between junction barrier elements
05/29/2014US20140145277 Magnetic device
05/29/2014US20140145274 Methods of forming replacement gate structures for nfet semiconductor devices and devices having such gate structures
05/29/2014US20140145271 Strain relaxation with self-aligned notch
05/29/2014US20140145270 Strain relaxation with self-aligned notch
05/29/2014US20140145269 Transistors and fabrication method
05/29/2014US20140145268 Semiconductor devices and methods of manufacturing the same
05/29/2014US20140145267 Semiconductor device and method of fabricating same
05/29/2014US20140145264 Methods of forming wiring to transistor and related transistor
05/29/2014US20140145262 High-voltage ldmos integrated device
05/29/2014US20140145261 High Voltage Drain-Extended MOSFET Having Extra Drain-OD Addition
05/29/2014US20140145260 Semiconductor device and method of manufacturing the same
05/29/2014US20140145259 Semiconductor device and method for fabricating the same
05/29/2014US20140145258 Semiconductor device with reduced miller capacitance and fabrication method thereof
05/29/2014US20140145257 Semiconductor device having a metal recess
05/29/2014US20140145256 Electronic device comprising a conductive structure and an insulating layer within a trench
05/29/2014US20140145253 Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
05/29/2014US20140145250 Locally isolated protected bulk finfet semiconductor device
05/29/2014US20140145249 Diode Structure Compatible with FinFET Process
05/29/2014US20140145248 Dummy fin formation by gas cluster ion beam
05/29/2014US20140145247 Fin isolation in multi-gate field effect transistors
05/29/2014US20140145246 Junction field effect transistor with an epitaxially grown gate structure
05/29/2014US20140145245 Device architecture and method for improved packing of vertical field effect devices
05/29/2014US20140145243 Group iii-nitride-based transistor with gate dielectric including a fluoride - or chloride- based compound
05/29/2014US20140145242 Fin-Last FinFET and Methods of Forming Same
05/29/2014US20140145241 Semiconductor device
05/29/2014US20140145239 Semiconductor device and manufacturing method of same
05/29/2014US20140145238 Semiconductor devices and fabrication methods
05/29/2014US20140145214 Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer
05/29/2014US20140145213 Schottky diode
05/29/2014US20140145212 Silicon carbide semiconductor device and method of manufacturing the same
05/29/2014US20140145211 Protective interface in silicon carbide semiconductor devices
05/29/2014US20140145210 Semiconductor device
05/29/2014US20140145209 Wide band gap semiconductor device
05/29/2014US20140145207 Schottky Barrier Diode and Fabricating Method Thereof
05/29/2014US20140145206 Semiconductor Device
05/29/2014US20140145203 Bidirectional transistor with optimized high electron mobility current
05/29/2014US20140145202 Nitride semiconductor crystal
05/29/2014US20140145201 Method and system for gallium nitride vertical jfet with separated gate and source
05/29/2014US20140145199 Array Substrate and Method for Fabricating Array Substrate, and Display Device
05/29/2014US20140145196 Pixel structure
05/29/2014US20140145195 Array substrate for liquid crystal display and method for manufacturing the same
05/29/2014US20140145186 Offset electrode tft structure
05/29/2014US20140145185 Sputtering target
05/29/2014US20140145184 Thin film transistor substrate and method for producing same
05/29/2014US20140145183 Oxide semiconductor film, film formation method thereof, and semiconductor device
05/29/2014US20140145180 Self-aligned thin film transistor and fabrication method thereof
05/29/2014US20140145179 Tft, method of manufacturing the tft, and method of manufacturing organic light emitting display device including the tft
05/29/2014US20140145178 Switching element, display substrate and method of manufacturing the same
05/29/2014US20140145148 Field effect transistor using graphene, phosphorus-doped graphene, and methods of producing the same
05/29/2014US20140145147 Nitride semiconductor structure and method of fabricating same
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