Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/29/2014US20140145124 In-ga-zn oxide sputtering target and method for producing same
05/29/2014US20140144013 Microelectromechanical system having movable element integrated into substrate-based package
05/28/2014EP2736171A1 Cascoded semiconductor devices
05/28/2014EP2736080A1 Rectifying device, transistor, and rectifying method
05/28/2014EP2736079A2 Method for manufacturing a normally blocked heterojunction transistor
05/28/2014EP2736078A1 Bidirectional high electron mobility transistor
05/28/2014EP2736077A1 Array substrate and method for fabricating array substrate, and display device
05/28/2014EP2736074A1 Array substrate and manufacturing method thereof, liquid crystal panel, and display device
05/28/2014EP2736072A1 Super junction semiconductor device
05/28/2014EP2736069A2 Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
05/28/2014EP2736067A1 Method for manufacturing semiconductor device
05/28/2014EP2735031A1 Method for growing iii-v epitaxial layers and semiconductor structure
05/28/2014EP2735030A1 Method for growing iii-v epitaxial layers
05/28/2014EP2735026A1 Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers
05/28/2014DE112012003772T5 Durch Verspannung verbesserter Übergang für Latch-Up-SCR Tension creates improved transition for SCR latch-up
05/28/2014DE112006002488B4 Halbleiter-Baueinheit Semiconductor package
05/28/2014DE10322523B4 Halbleiterdrucksensor mit einer Membran A semiconductor pressure sensor comprising a diaphragm
05/28/2014DE102013224134A1 Halbleiterbauelement Semiconductor device
05/28/2014DE102013019401A1 Transistor auf Gruppe III-Nitrid-Basis mit einem Gate-Dielektrikum mit einem Stoff auf Fluorid- oder Chlorid-Basis Transistor Group III nitride-based products with a gate dielectric containing a substance to fluoride or chloride-based
05/28/2014DE102013006624B3 Hochfrequenzleiter mit verbesserter Leitfähigkeit und Verfahren seiner Herstellung RF conductor with improved conductivity and its method of manufacture
05/28/2014DE102012221824B4 Verfahren zur Herstellung einer Multi-Gate-Transistoreinheit, Multi-Gate-Transistoreinheit und Schaltungsvorrichtung damit A method for producing a multi-gate transistor unit, multi-gate transistor device and circuit device so that
05/28/2014CN203617299U 一种双扩散金属氧化物半导体 A two-diffused metal oxide semiconductor
05/28/2014CN203617291U 一种太阳能旁路二极管的封装结构 A solar-pass diode package structure
05/28/2014CN103828080A 低热导率材料 Low thermal conductivity material
05/28/2014CN103828062A 有机半导体绝缘膜用组合物及有机半导体绝缘膜 An insulating film of the organic semiconductor and the organic semiconductor composition of the insulating film
05/28/2014CN103828061A 使用氩气稀释来沉积含硅层的方法 Argon dilution method to deposit silicon-containing layer
05/28/2014CN103828060A 半导体器件 Semiconductor devices
05/28/2014CN103828059A N沟道和p沟道finfet单元架构 N-channel and p-channel finfet cell architecture
05/28/2014CN103828058A 包括垂直半导体元件的半导体器件 A vertical semiconductor device including a semiconductor element
05/28/2014CN103828057A 用于晶体管栅极的帽盖介电结构 A cover cap for the transistor gate dielectric structure
05/28/2014CN103828056A 碳化硅半导体装置及其制造方法 The silicon carbide semiconductor device and manufacturing method
05/28/2014CN103828055A GaAsP纳米结构的Ga辅助的生长、不含金的GaAsP纳米结构及包含该纳米结构的光伏电池 Ga-assisted growth of nanostructures GaAsP, GaAsP excluding gold nanostructures and the nanostructure comprises a photovoltaic cell
05/28/2014CN103828054A 半导体器件 Semiconductor devices
05/28/2014CN103828037A 具有块间绝缘体的n沟道和p沟道finfet单元架构 N-channel and p-channel finfet cell architecture with inter-block insulator
05/28/2014CN103828030A 半导体元件、hemt元件、以及半导体元件的制造方法 The method of manufacturing a semiconductor device, hemt element, and a semiconductor element
05/28/2014CN103828026A 具有选择性形成的金属罩的集成电路结构 Selectively forming an integrated circuit structure having a metal cover
05/28/2014CN103828019A 在硅或类似的基材上制造氮化镓的厚的外延层的方法以及使用所述方法获得的层 Layer, and a method of using the method of manufacturing a GaN epitaxial layer on a silicon substrate or the like to obtain a thickness of
05/28/2014CN103828018A 金属氧化物薄膜的低温制造技术及衍生自纳米材料的金属复合物薄膜 Manufacturing technology and low temperature metal composite films derived from nanomaterials metal oxide thin film
05/28/2014CN103827164A 高分子化合物及有机光电转换元件 The polymer compound and an organic photoelectric conversion element
05/28/2014CN103824888A 一种具有微浮结构的半导体器件 A semiconductor device having a micro-structure of the float
05/28/2014CN103824887A 金属氧化物半导体薄膜晶体管及其制作方法 Metal oxide semiconductor thin film transistor and manufacturing method thereof
05/28/2014CN103824886A 半导体装置 Semiconductor device
05/28/2014CN103824885A 带有源应变源的GeSnn沟道隧穿场效应晶体管 GeSnn channel tunnel with a source of strain sources through field-effect transistor
05/28/2014CN103824884A 一种超级结mosfet、该超级结mosfet的形成方法 A super junction mosfet, the method of forming the super junction mosfet
05/28/2014CN103824883A 一种具有终端耐压结构的沟槽mosfet的及其制造方法 A method of manufacturing a trench having a terminal voltage mosfet structures
05/28/2014CN103824882A 双扩散金属氧化物半导体元件及其制造方法 Metal oxide semiconductor device and manufacturing method of double diffusion
05/28/2014CN103824881A 包括经掺杂低温缓冲层的假晶高电子迁移率晶体管 Comprising a doped low-temperature buffer layer is pseudomorphic high electron mobility transistor
05/28/2014CN103824880A 双轴张应变GeSn n沟道隧穿场效应晶体管 Biaxial tensile strain GeSn n-channel tunneling field effect transistor
05/28/2014CN103824879A 一种功率器件结终端结构与制造方法 A power device junction termination structure and manufacturing method
05/28/2014CN103824878A 一种碳化硅功率器件结终端结构及其制造方法 A silicon carbide power device junction termination structure and manufacturing method
05/28/2014CN103824861A 一种鳍状背栅的存储结构及其浮体单元的自动刷新方法 A method for automatically refresh the back gate of the storage structure and the floating body cell flippers
05/28/2014CN103824860A 制造存储器单元法、制造存储器单元装置法和存储器单元 Method of manufacturing a memory cell, the memory cell device manufacturing method and a memory unit
05/28/2014CN103824854A 改进线宽均匀性及减少通道中缺陷，并基于高电子迁移率晶体管的交换电路及微波集成电路 Improved linewidth uniformity and reduction of defects in the channel, and the microwave integrated circuit-based switching circuitry and the high electron mobility transistor
05/28/2014CN103824815A 制造半导体器件的方法及半导体器件 The method of manufacturing a semiconductor device and semiconductor device
05/28/2014CN103824780A 一种低温多晶硅tft器件及其制造方法 Low-temperature polysilicon tft device and manufacturing method
05/28/2014CN103824779A 一种薄膜晶体管及其制作方法、tft阵列基板、显示装置 A thin film transistor and manufacturing method, tft array substrate, a display device
05/28/2014CN103824778A 碳纳米管薄膜的垂直叠层形成的晶体管 Forming a thin film of carbon nanotubes vertically stacked transistors
05/28/2014CN103824777A 使用经掺杂的凸起源极和漏极区的源极和漏极掺杂 Using the source electrode and the drain electrode through the doped source and drain regions of the projections doping
05/28/2014CN103824775A FinFET及其制造方法 And a method of manufacturing FinFET
05/28/2014CN103824774A 沟渠式mos整流器及其制造方法 Trench-type rectifier and its manufacturing method mos
05/28/2014CN103824773A 不均质的功率半导体器件 Power semiconductor devices are not homogeneous
05/28/2014CN103822735A 一种压力传感器用晶片结构及该晶片结构的加工方法 A pressure sensor wafer structure and working methods of the wafer structure
05/28/2014CN102522426B 硅纳米线探测单元 Silicon nanowire detector unit
05/28/2014CN102479738B 沟槽隔离结构及其形成方法 Trench isolation structure and method of forming
05/28/2014CN102468333B 一种石墨烯器件及其制造方法 One kind of a method of manufacturing a graphene device
05/28/2014CN102468235B 鳍片场效应晶体管(finfet)器件及其制造方法 Fin-FET (finfet) device and manufacturing method
05/28/2014CN102446970B 一种防止酸槽清洗空洞形成的半导体器件及其制备方法 A semiconductor device and a method for preparing the acid wash tank to prevent the formation of voids
05/28/2014CN102446961B 包含功率器件的半导体装置及其制备方法 The method for preparing a semiconductor device comprising a power device and the
05/28/2014CN101978503B 半导体基板、半导体基板的制造方法及半导体装置 A semiconductor substrate, a semiconductor substrate and a method of manufacturing a semiconductor device
05/28/2014CN101794819B 薄膜晶体管、其制备方法和包括它的平板显示装置 A thin film transistor, its preparation method and its flat panel display device comprising
05/27/2014US8739096 Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures
05/27/2014US8737674 Housed loudspeaker array
05/27/2014US8737124 Semiconductor device
05/27/2014US8737114 Switching device structures and methods
05/27/2014US8736952 Photonic crystal device
05/27/2014US8736780 Thin film transistor array substrate for liquid crystal display
05/27/2014US8736735 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
05/27/2014US8736254 Physical quantity sensor and electronic apparatus
05/27/2014US8736079 Pad structure, circuit carrier and integrated circuit chip
05/27/2014US8736078 Chip package and method for assembling chip package
05/27/2014US8736074 Multi chip semiconductor device
05/27/2014US8736072 Semiconductor device and method for making same
05/27/2014US8736070 Semiconductor component comprising copper metallizations
05/27/2014US8736066 Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
05/27/2014US8736058 Low-resistance conductive pattern structures and methods of fabricating the same
05/27/2014US8736057 Substrate and manufacturing method therefor
05/27/2014US8736052 Semiconductor device including diffusion soldered layer on sintered silver layer
05/27/2014US8736050 Front side copper post joint structure for temporary bond in TSV application
05/27/2014US8736043 Power device having a specific range of distances between collector and emitter electrodes
05/27/2014US8736037 Leadless integrated circuit package having standoff contacts and die attach pad
05/27/2014US8736029 Semiconductor apparatus
05/27/2014US8736028 Semiconductor device structures and printed circuit boards comprising semiconductor devices
05/27/2014US8736025 III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity
05/27/2014US8736024 Semiconductive ceramic sintered compact
05/27/2014US8736023 Field effect transistor device and fabrication
05/27/2014US8736021 Semiconductor device comprising a metal system including a separate inductor metal layer
05/27/2014US8736016 Strained isolation regions
05/27/2014US8736015 Integrated circuit structure and method of forming the same
05/27/2014US8736013 Schottky diode with opposite-polarity schottky diode field guard ring
05/27/2014US8736012 Trenched semiconductor structure
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