Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/27/2014US8736008 Photodiode array and methods of fabrication
05/27/2014US8736004 Magnetic tunnel junction for MRAM applications
05/27/2014US8736003 Integrated hybrid hall effect transducer
05/27/2014US8736002 Sensor mounted in flip-chip technology at a substrate edge
05/27/2014US8736000 Capacitive chemical sensor
05/27/2014US8735999 Semiconductor device
05/27/2014US8735998 Transistor and method of producing same, and display
05/27/2014US8735997 Semiconductor device having drain/source surrounded by impurity layer and manufacturing method thereof
05/27/2014US8735996 Scavenging metal stack for a high-K gate dielectric
05/27/2014US8735992 Power switch with active snubber
05/27/2014US8735990 Radiation hardened FinFET
05/27/2014US8735989 Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
05/27/2014US8735988 Semiconductor device having a first spacer element and an adjacent second spacer element
05/27/2014US8735983 Integrated circuit transistors with multipart gate conductors
05/27/2014US8735982 Semiconductor device with superjunction structure
05/27/2014US8735981 Transistor component having an amorphous semi-isolating channel control layer
05/27/2014US8735979 Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers
05/27/2014US8735978 Semiconductor devices having reduced gate-drain capacitance
05/27/2014US8735977 Semiconductor device and method of fabricating the same
05/27/2014US8735976 TFT-LCD array substrate
05/27/2014US8735975 Implementing semiconductor soc with metal via gate node high performance stacked transistors
05/27/2014US8735974 Semiconductor devices
05/27/2014US8735973 Trench-gate MOSFET device and method for making the same
05/27/2014US8735972 SRAM cell having recessed storage node connections and method of fabricating same
05/27/2014US8735971 Method for producing semiconductor device and semiconductor device
05/27/2014US8735970 Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system
05/27/2014US8735969 Semiconductor structure and manufacturing method of the same
05/27/2014US8735966 Nonvolatile semiconductor memory device and manufacturing method thereof
05/27/2014US8735965 Nonvolatile semiconductor memory device and method for manufacturing same
05/27/2014US8735964 Charge carrier device
05/27/2014US8735963 Flash memory cells having leakage-inhibition layers
05/27/2014US8735962 Semiconductor device and method of manufacturing the same
05/27/2014US8735961 3D non-volatile memory device and method for fabricating the same
05/27/2014US8735960 High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance
05/27/2014US8735959 Non-volatile memory device formed by dual floating gate deposit
05/27/2014US8735958 Multi-layer polysilicon suppression of implant species penetration
05/27/2014US8735957 Vertical MOSFET transistor with a vertical capacitor region
05/27/2014US8735955 Grounding system and apparatus
05/27/2014US8735951 Semiconductor device having diffusion barrier element injection region
05/27/2014US8735950 Tunable schottky diode with depleted conduction path
05/27/2014US8735949 Junction type field effect transistor and manufacturing method thereof
05/27/2014US8735948 Semiconductor device
05/27/2014US8735945 Semiconductor device
05/27/2014US8735943 Semiconductor device with recess having inclined sidewall and method for manufacturing the same
05/27/2014US8735942 Compound semiconductor device and manufacturing method of the same
05/27/2014US8735941 Nitride based semiconductor device and method for manufacturing the same
05/27/2014US8735940 Semiconductor device and method for manufacturing the same
05/27/2014US8735938 Semiconductor device and method of producing the same
05/27/2014US8735937 Fully isolated LIGBT and methods for forming the same
05/27/2014US8735927 Group III nitride semiconductor light-emitting device
05/27/2014US8735923 Semiconductor light emitting device and manufacturing method thereof
05/27/2014US8735918 Light-emitting device having light-emitting elements with polygonal shape
05/27/2014US8735915 LED lighting fixture with phosphor-coated cover
05/27/2014US8735914 Light emitting device having plural light-emitting sections with resin walls within resin frame
05/27/2014US8735910 Light-emitting device
05/27/2014US8735908 Semiconductor device, electro-optic device, power conversion device, and electronic apparatus
05/27/2014US8735907 Ohmic electrode for use in a semiconductor diamond device
05/27/2014US8735906 Semiconductor device and method of manufacturing semiconductor device
05/27/2014US8735905 Method for producing aluminum nitride crystals
05/27/2014US8735904 Semiconductor device
05/27/2014US8735903 Density of states engineered field effect transistor
05/27/2014US8735900 EL display device
05/27/2014US8735897 Semiconductor device
05/27/2014US8735896 Light-emitting device
05/27/2014US8735895 Electronic device including graphene thin film and methods of fabricating the same
05/27/2014US8735893 Visible sensing transistor, display panel and manufacturing method thereof
05/27/2014US8735892 Semiconductor device using oxide semiconductor
05/27/2014US8735891 Display substrate and method of manufacturing the same
05/27/2014US8735890 Display substrate and method of manufacturing the display substrate
05/27/2014US8735889 Semiconductor device and manufacturing method thereof
05/27/2014US8735885 Antifuse memory device
05/27/2014US8735884 Semiconductor device including oxide semiconductor
05/27/2014US8735883 Oxide thin film transistor and method of fabricating the same
05/27/2014US8735882 ZnO based semiconductor devices and methods of manufacturing the same
05/27/2014US8735881 Resin film forming sheet for chip, and method for manufacturing semiconductor chip
05/27/2014US8735880 Light emitting transistor
05/27/2014US8735879 Organic light-emitting diode comprising at least two electroluminescent layers
05/27/2014US8735875 Light emitting element, method for manufacturing light emitting element, image display device, and illuminating device
05/27/2014US8735874 Light-emitting device, display device, and method for manufacturing the same
05/27/2014US8735873 Organic light emitting diode
05/27/2014US8735872 Organic light emitting diode display having a reflective electrode and a reflective layer
05/27/2014US8735870 Organic thin film transistor and method for manufacturing the same
05/27/2014US8735869 Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
05/27/2014US8735868 Semiconductor optical modulator
05/27/2014US8735867 Group III nitride nanorod light emitting device
05/27/2014US8735866 High-voltage electronic device
05/27/2014US8735865 Semiconductor memory device
05/27/2014US8735864 Nonvolatile memory device using a tunnel nitride as a current limiter element
05/27/2014US8735861 Semiconductor storage device and method of manufacturing same
05/27/2014US8735860 Variable resistance memory device and method of fabricating the same
05/27/2014US8735859 Nonvolatile semiconductor memory device
05/27/2014US8735858 Ionic devices with interacting species
05/27/2014US8735268 Method for fabricating metal-oxide-semiconductor field-effect transistor
05/27/2014US8735256 Current-confined heterojunction bipolar transistor
05/27/2014US8735253 Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process
05/27/2014US8735248 Method of manufacturing semiconductor device
05/27/2014US8735247 Method for fabricating nonvolatile memory device
05/27/2014US8735243 FET device with stabilized threshold modifying material
05/27/2014US8735239 Semiconductor devices including compressive stress patterns and methods of fabricating the same
05/27/2014US8735237 Method for increasing penetration depth of drain and source implantation species for a given gate height
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