Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/18/2014CN203659880U 半导体器件 Semiconductor devices
06/18/2014CN203659879U 半导体器件 Semiconductor devices
06/18/2014CN203659878U 半导体器件 Semiconductor devices
06/18/2014CN203659877U 超结器件和包括所述超结器件的半导体结构 Super-junction devices, including the super-junction devices and semiconductor structures
06/18/2014CN203659876U 超结器件和包括所述超结器件的半导体结构 Super-junction devices, including the super-junction devices and semiconductor structures
06/18/2014CN203659875U 半导体装置 Semiconductor device
06/18/2014CN203659874U 一种切割槽形成的可控硅穿通结构 A cutting-through groove formed in the structure of the thyristor
06/18/2014CN203659873U 一种提高正向耐压的可控硅台面结构 A way to improve the forward voltage of the thyristor mesa structure
06/18/2014CN203659872U 一种可控硅边缘结构 One kind SCR edge structure
06/18/2014CN203659871U 高压快开通晶闸管 The opening of the high-pressure fast thyristor
06/18/2014CN203659870U 超结器件和包括该超结器件的半导体结构 Super-junction devices and includes a semiconductor structure of the super-junction devices
06/18/2014CN203659869U 晶体管和半导体装置 A transistor and a semiconductor device
06/18/2014CN203659868U 一种具有高维持电压的ldmos结构的esd保护器件 Esd protection device having a high voltage to maintain the structure of ldmos
06/18/2014CN203659867U 一种新型高压双向触发器件 A new high-pressure two-way triggering
06/18/2014CN203659865U 一种阵列基板和显示装置 One kind of an array substrate and a display device
06/18/2014CN203659864U 包括具有隧道结构的非易失性存储器单元的电子设备 Electronic device having a tunnel structure including a non-volatile memory cell
06/18/2014CN203659863U 集成电路结构 Integrated circuit structure
06/18/2014CN203659861U 一种具有高维持电流强鲁棒性的ldmos-scr结构的esd自保护器件 A high holding current strong robustness ldmos-scr structure esd self-protection devices have
06/18/2014CN203659859U 一种具有高维持电流的环形vdmos结构的esd保护器件 Esd protection device to maintain a high current loop vdmos structure has
06/18/2014CN203659858U 一种齐纳击穿的小回滞scr结构的高压esd保护器件 A small back zener high voltage hysteresis scr esd protection device structure
06/18/2014CN203659852U 二极管 Diode
06/18/2014CN103875079A Photovoltaic device
06/18/2014CN103875077A Insulating film and production method for same
06/18/2014CN103875076A Insulated gate semiconductor device and method for manufacturing same
06/18/2014CN103875075A Method and system for a GaN vertical JFET utilizing a regrown channel
06/18/2014CN103875074A Insulated gate transistor and method of production thereof
06/18/2014CN103875073A Semiconductor device, method for manufacturing same, and power supply apparatus
06/18/2014CN103875069A High-voltage-resistance semiconductor device
06/18/2014CN103875064A Drive circuit substrate and manufacturing method therefor, display device, and electronic device
06/18/2014CN103874704A Dioxaanthanthrene-based compound, laminated structure and molding method thereof, and electronic device and production method thereof
06/18/2014CN103872147A Schottky barrier diode and method of manufacturing the same
06/18/2014CN103872146A Semiconductor device
06/18/2014CN103872145A GaN heterojunction power diode
06/18/2014CN103872144A Soft fast recovery diode and manufacturing method thereof
06/18/2014CN103872143A Metal oxide semiconductor diode element with terminal structure and manufacturing method for metal oxide semiconductor diode element
06/18/2014CN103872142A Pixel structure and manufacturing method therefor
06/18/2014CN103872141A Semiconductor device and manufacturing method thereof
06/18/2014CN103872140A Planar ring gate transistor based on nanowire and preparation method thereof
06/18/2014CN103872139A Thin film transistor, manufacturing method of thin film transistor, array substrate and display device
06/18/2014CN103872138A Transistors, methods of manufacturing transistors, and electronic devices including transistors
06/18/2014CN103872137A Enhanced type, depletion type and current induction integrated VDMOS power device
06/18/2014CN103872136A Power transistor of double-gate MOS structure and manufacturing method of power transistor
06/18/2014CN103872135A Metal oxide semiconductor device with increased breakdown voltage
06/18/2014CN103872134A Power semiconductor device and method of manufacturing the same
06/18/2014CN103872133A Short channel trench mosfets
06/18/2014CN103872132A Metal-oxide-semiconductor transistor (MOS) and method of fabricating same
06/18/2014CN103872131A Multi-Fin FinFETs with Epitaxially-Grown Merged Source/Drains and methods of manufacturing the same
06/18/2014CN103872130A Semiconductor device and method for fabricating the same
06/18/2014CN103872129A Semiconductor device and fabrication method thereof
06/18/2014CN103872128A Vertical type semiconductor device and fabrication method thereof
06/18/2014CN103872127A 半导体装置 Semiconductor device
06/18/2014CN103872126A Channel-type power MOSFET (metal-oxide-semiconductor field effect transistor) device
06/18/2014CN103872125A Channel-type grid metal oxide semiconductor field effect transistor and manufacturing method thereof
06/18/2014CN103872124A Quantum five-electrode field effect transistor
06/18/2014CN103872123A N-channel radio frequency LDMOS (Lateral Double-diffused Metal Oxide Semiconductor field effect transistor) device and manufacturing method
06/18/2014CN103872122A Trench gate transistor and manufacturing method thereof
06/18/2014CN103872121A Heterojunction field effect transistor based on channel array structure
06/18/2014CN103872120A Semiconductor device and method of manufacturing the semiconductor device
06/18/2014CN103872119A High electron mobility transistor and manufacturing method thereof
06/18/2014CN103872118A Field effect transistor and preparing method thereof
06/18/2014CN103872117A Semiconductor device and method of manufacturing the same
06/18/2014CN103872116A Power semiconductor device
06/18/2014CN103872115A Enhanced micro break-through type IGBT
06/18/2014CN103872114A Groove type IGBT and manufacturing method thereof
06/18/2014CN103872113A Tunneling type reverse guide IGBT and manufacturing method thereof
06/18/2014CN103872112A Semiconductor structure and operation method thereof
06/18/2014CN103872111A IGBT and manufacturing method thereof
06/18/2014CN103872110A Back surface structure of reverse conducting IGBT and manufacturing method thereof
06/18/2014CN103872109A Insulated gate bipolar transistor
06/18/2014CN103872108A IGBT structure and preparation method thereof
06/18/2014CN103872107A Heterojunction bipolar transistor, power amplifier including the same, and method for fabricating heterojunction bipolar transistor
06/18/2014CN103872106A Radiation resistant bipolar device and manufacturing method thereof
06/18/2014CN103872105A Reinforced bipolar transistor resistant to radiation and method for preparing reinforced bipolar transistor resistant to radiation
06/18/2014CN103872104A TQ-126 triode
06/18/2014CN103872103A Systems and methods for ohmic contacts in silicon carbide devices
06/18/2014CN103872102A FinFET with Embedded MOS Varactor and Method of Making Same
06/18/2014CN103872101A Insulated gate field effect transistor and manufacture method thereof
06/18/2014CN103872100A Low-leak-current semiconductor thin film heterojunction and preparing method thereof
06/18/2014CN103872099A Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device
06/18/2014CN103872098A Power semiconductor device
06/18/2014CN103872097A Power semiconductor device and method for manufacturing the same
06/18/2014CN103872096A Semiconductor structure and forming method thereof
06/18/2014CN103872095A Groove of P-type LDMOS (laterally diffused metal oxide semiconductor) device and process method
06/18/2014CN103872094A Semiconductor device and formation method thereof
06/18/2014CN103872059A P-type channel flash memory and manufacturing method thereof
06/18/2014CN103872058A Non-volatile memory circuit
06/18/2014CN103872056A Three-dimensional gate structure with horizontal extension portions and manufacturing method of three-dimensional grid structure with horizontal extension portions
06/18/2014CN103872055A Vertical channel type three dimensional semiconductor memory device and preparation method thereof
06/18/2014CN103872052A Semiconductor device
06/18/2014CN103872051A Semiconductor device
06/18/2014CN103872043A Display device and manufacturing method thereof
06/18/2014CN103872040A Thin film transistor array base plate and manufacturing method thereof
06/18/2014CN103871969A Electrically erasable programmable read-only memory as well as forming method and erasure method thereof
06/18/2014CN103871952A Method of Manufacturing a Semiconductor Device and a Semiconductor Workpiece
06/18/2014CN103871903A Transistor and manufacturing method thereof
06/18/2014CN103871901A Groove power device and manufacturing method thereof
06/18/2014CN103871900A Groove field effect transistor and forming method thereof
06/18/2014CN103871896A Semiconductor structure and manufacturing method
06/18/2014CN103871894A Semiconductor device and forming method thereof
06/18/2014CN103871893A BULK FIN FET WITH SUPER STEEP RETROGRADE WELL and manufacturing method of same
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