Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/11/2014CN203644779U 集成续流二极管的功率半导体器件 Integrated freewheeling diode power semiconductor devices
06/11/2014CN203644778U 一种电容器及功率集成电路 A capacitor and power integrated circuits
06/11/2014CN103858446A Sensitivity adjustment apparatus and method for MEMS devices
06/11/2014CN103858344A Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
06/11/2014CN103858238A Stress enhanced junction engineering for latchup SCR
06/11/2014CN103858237A Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration
06/11/2014CN103858236A Method and system for a GaN vertical jfet utilizing a regrown gate
06/11/2014CN103858221A Planarized semiconductor particles positioned on a substrate
06/11/2014CN103858215A Non-planar transistors and methods of fabrication thereof
06/11/2014CN103855226A Schottky clamping diode with groove structure and terminal structure
06/11/2014CN103855225A Thin film transistor, display device and method of manufacturing the same
06/11/2014CN103855224A Semiconductor device
06/11/2014CN103855223A Semiconductor device
06/11/2014CN103855222A Semiconductor Device and Method of Manufacturing Semiconductor Device
06/11/2014CN103855221A Semiconductor Device and Method of Manufacturing a Semiconductor Device
06/11/2014CN103855220A Semiconductor device including fin and drain extension region, and manufacturing method
06/11/2014CN103855219A Semiconductor devices including protruding insulation portions between active fins
06/11/2014CN103855218A SELF-ALIGNED DOUBLE-GATE GRAPHENE TRANSISTOR and method for fabricating same
06/11/2014CN103855217A Semiconductor Device Including Trenches and Method of Manufacturing a Semiconductor Device
06/11/2014CN103855216A Semiconductor device including alternating source and drain regions, and respective source and drain metallic strips
06/11/2014CN103855215A FINFET device with isolated channel
06/11/2014CN103855214A Semiconductor device and manufacturing method thereof
06/11/2014CN103855213A Semiconductor Device Having INTERFACIAL LAYER AND MANUFACTURING METHOD THEREOF
06/11/2014CN103855212A Horizontal diffusing semiconductor device
06/11/2014CN103855211A Semiconductor element and manufacturing method thereof
06/11/2014CN103855210A Radio frequency transverse double-diffusion field effect transistor and manufacturing method thereof
06/11/2014CN103855209A High-side lateral double diffused metal oxide semiconductor device and manufacturing method thereof
06/11/2014CN103855208A High-voltage LDMOS integrated device
06/11/2014CN103855207A Compound semiconductor device and manufacturing method of the same
06/11/2014CN103855206A Insulated gate bipolar transistor and manufacturing method thereof
06/11/2014CN103855205A Semiconductor devices and driving method
06/11/2014CN103855204A Collector structure of reverse conducting IGBT and manufacturing method thereof
06/11/2014CN103855203A Reverse-conducting type insulated gate bipolar transistor structure and manufacturing method thereof
06/11/2014CN103855202A IGBT, celluar structure of IGBT and IGBT forming method
06/11/2014CN103855201A Igbt and manufacturing method thereof
06/11/2014CN103855200A Semiconductor device and manufacturing method thereof
06/11/2014CN103855199A Reverse conducting type IGBT device
06/11/2014CN103855198A Reverse-conduction-type IGBT device and formation method thereof
06/11/2014CN103855197A IGBT device and forming method thereof
06/11/2014CN103855196A Heterojunction bipolar transistor device and method of making same
06/11/2014CN103855195A Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
06/11/2014CN103855194A Semiconductor materials, transistors including the same, and electronic devices including transistors
06/11/2014CN103855169A 显示装置 Display device
06/11/2014CN103855166A Semiconductor memory devices and methods of fabricating the same
06/11/2014CN103855162A Stacked gate type SONOS flash memory and manufacturing method thereof
06/11/2014CN103855156A Diode structure compatible with FinFET process
06/11/2014CN103855155A Tri-mode integrated insulated gate bipolar transistor and forming method thereof
06/11/2014CN103855094A Semiconductor device and manufacturing method thereof
06/11/2014CN103855093A Semiconductor device and manufacturing method thereof
06/11/2014CN103855091A Semiconductor structure and method of manufacturing same
06/11/2014CN103855090A Semiconductor structure and forming method thereof
06/11/2014CN103855089A Reverse conduction type insulated gate bipolar transistor and manufacturing method thereof
06/11/2014CN103855033A Finned field effect transistor with SiGeSn channels and forming method thereof
06/11/2014CN103855032A Method of manufacturing semiconductor devices and apparatus used for semiconductor devices
06/11/2014CN103855031A Semiconductor structures and method of manufacturing same
06/11/2014CN103855029A Facet-free strained silicon transistor
06/11/2014CN103855028A Semiconductor Device and Method of Forming the Same
06/11/2014CN103855027A Finfet and manufacturing method thereof
06/11/2014CN103855026A Finfet and manufacturing method thereof
06/11/2014CN103855025A Nmos transistor and manufacturing method thereof
06/11/2014CN103855024A NMOS transistor, CMOS transistor and manufacturing method of NMOS transistor and CMOS transistor
06/11/2014CN103855023A Forming method of semiconductor device and semiconductor device
06/11/2014CN103855021A Manufacturing method for FinFET device
06/11/2014CN103855020A Transistor and method for forming transistor
06/11/2014CN103855015A FinFET and manufacturing method
06/11/2014CN103855014A P type mosfet and manufacturing method thereof
06/11/2014CN103855011A Fin field effect transistor (FinFET) and manufacturing method thereof
06/11/2014CN103855010A Fin field effect transistor (FinFET) and manufacturing method thereof
06/11/2014CN103855008A N type mosfet and manufacturing method thereof
06/11/2014CN103855005A Dual-stress heterogeneous SOI semiconductor structure and manufacturing method thereof
06/11/2014CN103855001A Transistor and manufacturing method thereof
06/11/2014CN103855000A Method for manufacturing reverse blocking insulated gate bipolar transistor
06/11/2014CN103854999A Super junction manufacturing method
06/11/2014CN103854998A Internally-transparent collector-insulated gate bipolar transistor and manufacturing method thereof
06/11/2014CN103854997A Punch-through IGBT and manufacturing method thereof
06/11/2014CN103854989A Structures having uniform finFET gate height and forming method thereof
06/11/2014CN103854988A Structure having uniform finFET gate height and method for forming same
06/11/2014CN103854986A Manufacturing method of dummy gate in gate-last technology and dummy gate in gate-last technology
06/11/2014CN103854984A Manufacturing method of dummy gate in gate-last technology and dummy gate in gate-last technology
06/11/2014CN103854970A Thin film deposition method and semiconductor device
06/11/2014CN102778481B Induction gate type amorphous metal oxide TFT gas sensor
06/11/2014CN102646709B Rapid super junction vertical double-diffused metal-oxide semiconductor field-effect transistor
06/11/2014CN102593177B Tunneling transistor with horizontal quasi coaxial cable structure and forming method thereof
06/11/2014CN102569410B Double-layer isolated semiconductor nano line MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor)
06/11/2014CN102544065B Zener diode structure in 60V high-voltage process for bipolar, complementary metal oxide semiconductor (CMOS) and double diffusion metal oxide semiconductor (DMOS) (BCD) devices, and manufacturing method for Zener diode structure
06/11/2014CN102428563B Structure and method of forming electrically blown metal fuses for integrated circuits
06/11/2014CN102265404B 功率用半导体装置 Power semiconductor device
06/11/2014CN102257622B Deep trench varactors
06/11/2014CN102160105B Display device and manufacturing method of the same
06/11/2014CN102150271B MOSFET and method for manufacturing MOSFET
06/10/2014US8751066 Industrial remote control system and methods
06/10/2014US8750044 Three-dimensional nonvolatile memory devices
06/10/2014US8750041 Scalable electrically erasable and programmable memory
06/10/2014US8749725 Flat panel display apparatus and method of manufacturing the same
06/10/2014US8749686 CCD image sensors and methods
06/10/2014US8749678 Solid-state imaging apparatus
06/10/2014US8749676 Solid-state imaging apparatus
06/10/2014US8749293 Stackable programmable passive device and a testing method
06/10/2014US8749222 Method of sensing magnitude of current through semiconductor power device
06/10/2014US8749073 Wiring board, method of manufacturing the same, and semiconductor device
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