Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/15/2014US20140131755 Micro-reflectors on a substrate for high-density led array
05/15/2014US20140131738 Semiconductor device
05/15/2014US20140131736 Semiconductor device and method for growing semiconductor crystal
05/15/2014US20140131735 Source and drain doping using doped raised source and drain regions
05/15/2014US20140131724 Selective gallium nitride regrowth on (100) silicon
05/15/2014US20140131722 Dual phase gallium nitride material formation on (100) silicon
05/15/2014US20140131721 Lateral gan jfet with vertical drift region
05/15/2014US20140131720 Composite layer stacking for enhancement mode transistor
05/15/2014US20140131717 Pixel Unit Structure, Array Substrate and Display Device
05/15/2014US20140131716 Memory device and method for fabricating the same
05/15/2014US20140131715 Array substrate, method for fabricating the same, and display device
05/15/2014US20140131713 Array substrate of liquid crystal display device and method of fabricating the same
05/15/2014US20140131712 Method for manufacturing thin film transistor, and thin film transistor thereof
05/15/2014US20140131711 Structures and techniques for using semiconductor body to construct bipolar junction transistors
05/15/2014US20140131710 Structures and techniques for electro-static discharge (esd) protection using ring structured diodes
05/15/2014US20140131708 Semiconductor device including an asymmetric feature, and method of making the same
05/15/2014US20140131704 Semiconductor device and manufacturing method thereof
05/15/2014US20140131702 Semiconductor device
05/15/2014US20140131701 Semiconductor device
05/15/2014US20140131700 Semiconductor device
05/15/2014US20140131699 Thin film transistor display panel and method of manufacturing the same
05/15/2014US20140131698 Channel layer and thin film transistor including the same
05/15/2014US20140131696 Method for producing field effect transistor, field effect transistor, display device, image sensor, and x-ray sensor
05/15/2014US20140131678 Thin film transistor and organic light emitting pixel having the same
05/15/2014US20140131662 Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom
05/15/2014US20140131661 Graphene field effect transistor
05/15/2014US20140131660 Uniaxially strained nanowire structure
05/15/2014US20140131659 Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
05/15/2014US20140131626 Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
05/15/2014US20140130852 Diode energy converter for chemical kinetic electron energy transfer
05/15/2014DE112012003258T5 Siliciumcarbid-Halbleiterbauelement Silicon carbide semiconductor device
05/15/2014DE112012002956T5 Bipolarer Transistor mit isoliertem Gate The insulated gate bipolar transistor
05/15/2014DE112012002126T5 SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung SiC single crystal wafer and SiC semiconductor device
05/15/2014DE112012000272B4 Verfahren zum bilden von silicid, germanid oder germanosilicid in strukturen, die einen nanodraht aufweisen Methods of forming silicide or germanide germanosilicid in structures having a nano wire
05/15/2014DE102013223249A1 Inhomogene Leistungshalbleiterbauelemente Inhomogeneous power semiconductor components
05/15/2014DE102013218238A1 Verfahren zur herstellung eines steuerbaren halbleiterbauelements Process for the preparation of a controllable semiconductor component
05/15/2014DE102013214591A1 Halbleitervorrichtung Semiconductor device
05/15/2014DE102013112361A1 Halbleitervorrichtung mit metallgefüllter Nut in einer Polysilicium-Gateelektrode A semiconductor device having metal-filled groove in a polysilicon gate electrode
05/15/2014DE102013112137A1 Verfahren zum Verarbeiten eines Dies This method of processing a
05/15/2014DE102013104983A1 Zellen-Layout für SRAM-FinFET-Transistoren Cell layout for SRAM-FinFET transistors
05/15/2014DE102013102156A1 Verbundschichtstapelung für Enhancement Mode-Transistor Composite layer stacking for enhancement mode transistor
05/15/2014DE102013101705A1 ESD-Vorrichtungen mit Halbleiterfinnen ESD devices with semiconductor fins
05/15/2014DE102013101191A1 Widerstandsvariable Speicherstruktur und Verfahren zur Ausbildung Dieser Resistance variable memory structure and method for forming this
05/15/2014DE102013018803A1 Entkopplungskondensatoren für Zwischenelemente Decoupling capacitors for intermediate elements
05/15/2014DE102012217539A1 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils The optoelectronic device and method for producing an optoelectronic component
05/15/2014DE102012207913B4 Verfahren zum Herstellen einer Fin-FET-Einheit A method of manufacturing a fin-FET unit
05/15/2014DE102012105685B4 Halbleiterbauelement mit Spannungskompensationsstruktur Semiconductor device with voltage compensation structure
05/15/2014DE102012014860A1 ESD-Schutz ESD protection
05/15/2014DE102008056574B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
05/15/2014DE102008001943B4 Halbleiterbauelement und zugehöriges Herstellungsverfahren A semiconductor device and manufacturing method thereof
05/14/2014EP2731145A2 Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof
05/14/2014EP2731144A2 Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof
05/14/2014EP2731143A2 Power semiconductor device
05/14/2014EP2731142A2 Power semiconductor device
05/14/2014EP2731141A1 Method for manufacturing a field effect tansistor having a SiGe channel using ion implantation
05/14/2014EP2731127A1 Tft array substrate, method of fabricating same, and display device
05/14/2014CN103797581A 用于生长iii-v外延层的方法和半导体结构 Iii-v method for growing epitaxial layers and the semiconductor structure
05/14/2014CN103794655A 半导体电容及具有该半导体电容的半导体装置 A semiconductor device having a semiconductor capacitors and the capacitance of the semiconductor
05/14/2014CN103794654A 半导体装置 Semiconductor device
05/14/2014CN103794653A 带有很高的衬底-栅极击穿和嵌入式雪崩箝位二极管的横向超级结器件 The substrate with a high - and embedded gate avalanche breakdown diode clamp lateral super junction devices
05/14/2014CN103794652A 金属氧化物半导体薄膜晶体管及其制备方法 A metal oxide semiconductor thin film transistor and a method for preparing
05/14/2014CN103794651A 一种薄膜晶体管及其制备方法、阵列基板、显示装置 A thin film transistor and a preparation method, the array substrate, a display device
05/14/2014CN103794650A 集成esd保护的耗尽型功率mos器件及其制备方法 Esd protection integrated power mos depletion mode device and its preparation method
05/14/2014CN103794649A 半导体器件和用于制造半导体器件的方法 The semiconductor device and a method for manufacturing a semiconductor device
05/14/2014CN103794648A 半导体装置 Semiconductor device
05/14/2014CN103794647A 一种双向igbt器件及其制作方法 A two-way igbt device and manufacturing method thereof
05/14/2014CN103794646A 半导体器件 Semiconductor devices
05/14/2014CN103794645A Igbt器件及其制作方法 Igbt device and manufacturing method thereof
05/14/2014CN103794644A 一种磷化铟基双异质结双极晶体管结构及制备方法 One kind of InP-based double-heterojunction bipolar transistor structure and preparation methods
05/14/2014CN103794643A 一种基于槽栅高压器件及其制作方法 A trench-gate high voltage device and its production method based on
05/14/2014CN103794642A 外延片 Epitaxial wafers
05/14/2014CN103794641A 半导体装置 Semiconductor device
05/14/2014CN103794640A 包括单元区域和边缘区域的超结半导体器件 Super junction semiconductor device includes a cell region and the edge region
05/14/2014CN103794639A 半导体器件 Semiconductor devices
05/14/2014CN103794638A 一种igbt器件及其制作方法 One kind igbt device and manufacturing method thereof
05/14/2014CN103794633A 一种阵列基板及其制作方法、显示装置 One kind of array substrate and method of manufacturing a display device
05/14/2014CN103794616A 发光二极管阵列结构及其打印头与打印装置 Structure and the light emitting diode array apparatus of the print head and
05/14/2014CN103794609A 非挥发性内存单元及非挥发性内存矩阵 Non-volatile memory cell and non-volatile memory matrix
05/14/2014CN103794607A 一种电容器及功率集成电路 A capacitor and power integrated circuits
05/14/2014CN103794564A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method
05/14/2014CN103794560A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
05/14/2014CN103794558A 一种半导体器件及其制造方法 A semiconductor device and its manufacturing method
05/14/2014CN103794519A 一种半导体器件及其制备方法 A semiconductor device and its preparation method
05/14/2014CN103794512A 双Finfet晶体管及其制备方法 Dual Finfet transistor and its preparation method
05/14/2014CN103794511A 显示装置以及电子设备 A display device and an electronic device
05/14/2014CN103794509A 借由提供阶化嵌入应变诱导半导体区于晶体管的效能增进 Provided by the order of the embedded strain inducing semiconductor region in transistor performance enhancing
05/14/2014CN103794504A 快闪存储器及其制作方法 Flash memory and manufacturing method thereof
05/14/2014CN103794502A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/14/2014CN103794501A 晶体管及其形成方法 Transistor and method of forming
05/14/2014CN103794500A 晶体管及其形成方法 Transistor and method of forming
05/14/2014CN103794499A 鳍式场效应管及其形成方法 Fin-type field effect transistor and method of forming
05/14/2014CN103794498A 一种半导体器件及其制备方法 A semiconductor device and its preparation method
05/14/2014CN103794497A 一种半导体器件及其制备方法 A semiconductor device and its preparation method
05/14/2014CN103794493A 半导体器件制造方法及器件结构，硬件描述语言设计结构 The semiconductor device manufacturing method and the device structure, the structure design of the hardware description language
05/14/2014CN103794487A 半导体器件制造方法 The semiconductor device manufacturing method
05/14/2014CN103794481A 高k金属栅极结构及其制造方法 High-k metal gate structure and manufacturing method
05/14/2014CN103794477A 碳化硅mosfet单元结构和用于形成碳化硅mosfet单元结构的方法 A silicon carbide structure and method for forming a mosfet unit cell structures of silicon carbide mosfet
05/14/2014CN103789764A 半导体元件的制造方法、半导体元件 The method of manufacturing a semiconductor device, a semiconductor element
05/14/2014CN103236443B 一种金属氧化物薄膜晶体管及其制备方法 Of a metal oxide thin film transistor and a method for preparing
05/14/2014CN102723310B 一种阵列基板的制作方法、阵列基板和液晶显示装置 A method of manufacturing an array substrate, the array substrate and the liquid crystal display device
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