Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/24/2014US8759822 Organic light-emitting display apparatus and method of manufacturing the same
06/24/2014US8759821 Transparent organic electroluminescent element and production method therefor
06/24/2014US8759820 Semiconductor device
06/24/2014US8759819 Organic electroluminescence device
06/24/2014US8759818 Deuterated compounds for electronic applications
06/24/2014US8759817 Organic light-emitting device array and display
06/24/2014US8759816 Schottky-quantum dot photodetectors and photovoltaics
06/24/2014US8759807 Memory cells
06/24/2014US8759806 Semiconductor memory device
06/24/2014US8759234 Deposited material and method of formation
06/24/2014US8759206 Semiconductor device and method for manufacturing the same
06/24/2014US8759205 Semiconductor device and method for manufacturing semiconductor device
06/24/2014US8759202 Semiconductor device and manufacturing method
06/24/2014US8759188 Radiation hardened bipolar injunction transistor
06/24/2014US8759185 Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same
06/24/2014US8759184 FinFETs and the methods for forming the same
06/24/2014US8759180 Methods for fabricating step gate electrode structures for field-effect transistors
06/24/2014US8759179 Method of forming gate pattern and semiconductor device
06/24/2014US8759167 Semiconductor device and method for manufacturing the same
06/24/2014US8759163 Layout of a MOS array edge with density gradient smoothing
06/24/2014US8759136 Method for creating monocrystalline piezoresistors
06/24/2014US8759134 Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
06/24/2014US8759125 Light-emitting dies incorporating wavelength-conversion materials and related methods
06/24/2014US8759121 Light emitting diode array and method for manufacturing the same
06/24/2014US8759120 Silicon solar cell
06/24/2014US8758217 Piezoelectric nanowire vibration sensors
06/19/2014WO2014093681A2 High performance topological insulator transistors
06/19/2014WO2014093611A1 High voltage gate formation
06/19/2014WO2014093536A1 Improved ion implant for defect control
06/19/2014WO2014093217A1 Epitaxial grown extremely shallow extension region
06/19/2014WO2014092943A1 Air gap isolation in non-volatile memory using sacrificial films
06/19/2014WO2014092936A1 Insulated gate field-effect transistor device and method of making the same
06/19/2014WO2014092846A1 Finfet with merge-free fins
06/19/2014WO2014092752A1 Semiconductor diode assembly
06/19/2014WO2014092440A1 Thin film transistor, method for manufacturing the same, and display device comprising the same
06/19/2014WO2014092192A1 Oxide semiconductor element, process for producing oxide semiconductor element, display device, image sensor and x-ray sensor
06/19/2014WO2014092089A1 Power semiconductor device, rectifier device, and power source device
06/19/2014WO2014092060A1 Sensor element and composite sensor
06/19/2014WO2014092059A1 Sensor element and composite sensor
06/19/2014WO2014092040A1 Angular acceleration sensor and acceleration sensor
06/19/2014WO2014092039A1 Angular acceleration sensor and acceleration sensor
06/19/2014WO2014092019A1 Composition, laminate, method for producing laminate, transistor, and method for producing transistor
06/19/2014WO2014092003A2 Semiconductor device, and manufacturing method for same
06/19/2014WO2014091961A1 Semiconductor device and semiconductor device manufacturing method
06/19/2014WO2014091960A1 Solvent or solvent composition to be used in organic transistor manufacturing
06/19/2014WO2014091959A1 Semiconductor device and production method therefor
06/19/2014WO2014091740A1 Organic semiconductor element and cmis semiconductor device provided with same
06/19/2014WO2014091545A1 Semiconductor device and manufacturing method thereof
06/19/2014WO2014091520A1 Variable capacitor array
06/19/2014WO2014089813A1 Transistor and manufacturing method thereof
06/19/2014WO2014089795A1 Vertical channel-type three-dimensional semiconductor memory device and preparation method therefor
06/19/2014WO2014089780A1 Ultra shallow junction semiconductor field effect transistor and preparation method thereof
06/19/2014US20140170998 Group iii-n transistors on nanoscale template structures
06/19/2014US20140170843 Charge Trapping Split Gate Device and Method of Fabricating Same
06/19/2014US20140170840 Epitaxial Formation Mechanisms of Source and Drain Regions
06/19/2014US20140170839 Methods of forming fins for a finfet device wherein the fins have a high germanium content
06/19/2014US20140170829 Lateral bipolar transistor and cmos hybrid technology
06/19/2014US20140170828 Plasma doping method and method for fabricating semiconductor device using the same
06/19/2014US20140170827 Tunneling Field Effect Transistor (TFET) Formed By Asymmetric Ion Implantation and Method of Making Same
06/19/2014US20140170826 Biaxial strained field effect transistor devices
06/19/2014US20140170825 Finfet with merge-free fins
06/19/2014US20140170824 Method for fabricating semiconductor device
06/19/2014US20140170823 Method for fabricating trench type transistor
06/19/2014US20140170821 Patterning of vertical nanowire transistor channel and gate with directed self assembly
06/19/2014US20140170820 Method of fabricating hybrid impact-ionization semiconductor device
06/19/2014US20140170819 High electron mobility transistor structure with improved breakdown voltage performance
06/19/2014US20140170818 Nanorod thin-film transistors
06/19/2014US20140170817 Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
06/19/2014US20140170809 Method For Manufacturing Semiconductor Device
06/19/2014US20140170774 Method for manufacturing a magnetoresistive sensor
06/19/2014US20140169105 Non-volatile memory device and method of fabricating the same
06/19/2014US20140169104 Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
06/19/2014US20140169103 Methods of forming and programming memory devices with isolation structures
06/19/2014US20140169080 Thermal spin torqure transfer magnetoresistive random access memory
06/19/2014US20140169078 Piezoelectronic memory
06/19/2014US20140169074 Memory elements with stacked pull-up devices
06/19/2014US20140169045 Bidirectional device, bidirectional device circuit and power conversion apparatus
06/19/2014US20140167835 Three Terminal PIN Diode
06/19/2014US20140167264 Integrated circuits and methods for fabricating integrated circuits with silicide contacts on non-planar structures
06/19/2014US20140167257 Fabrication of three-dimensional high surface area electrodes
06/19/2014US20140167230 Composite substrate and process for producing same
06/19/2014US20140167228 Etch process with pre-etch transient conditioning
06/19/2014US20140167227 Method of making a semiconductor device using multiple layer sets
06/19/2014US20140167223 Semiconductor Cooling Device
06/19/2014US20140167222 Method for producing group iii nitride semiconductor and template substrate
06/19/2014US20140167218 Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter
06/19/2014US20140167213 Moat Construction to Reduce Noise Coupling to a Quiet Supply
06/19/2014US20140167212 Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method
06/19/2014US20140167210 Semiconductor structure and fabrication method
06/19/2014US20140167209 Method of Manufacturing a Semiconductor Device and a Semiconductor Workpiece
06/19/2014US20140167208 Chemical mechanical planarization process and structures
06/19/2014US20140167206 Shallow trench isolation structure and method of manufacture
06/19/2014US20140167205 Super junction for semiconductor device and method for manufacturing the same
06/19/2014US20140167204 Semiconductor diode assembly
06/19/2014US20140167203 Electrostatic discharge resistant diodes
06/19/2014US20140167202 Electrostatic discharge resistant diodes
06/19/2014US20140167201 Semiconductor device
06/19/2014US20140167187 N Metal for FinFET
06/19/2014US20140167186 Semiconductor device structures including strained transistor channels
06/19/2014US20140167178 Semiconductor device and fabrication method therefor
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