Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/22/2014US20140138690 Semiconductor device and method of manufacturing the same
05/22/2014US20140138683 Semiconductor device and method for manufacturing the same
05/22/2014US20140138680 Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device
05/22/2014US20140138679 Planar nonpolar group-iii nitride films grown on miscut substrates
05/22/2014US20140138678 Semiconductor device and method for manufacturing same
05/22/2014US20140138677 Thin film transistor and fabrication method thereof
05/22/2014US20140138676 Semiconductor device
05/22/2014US20140138675 Semiconductor device
05/22/2014US20140138674 Semiconductor device
05/22/2014US20140138673 Self-aligned metal oxide tft with reduced number of masks and with reduced power consumption
05/22/2014US20140138672 Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane
05/22/2014US20140138671 Display substrate and method of manufacturing the same
05/22/2014US20140138626 Vertical stacking of graphene in a field-effect transistor
05/22/2014US20140138625 Transistors from vertical stacking of carbon nanotube thin films
05/22/2014US20140138624 Vertical stacking of graphene in a field-effect transistor
05/22/2014US20140138623 Transistors from vertical stacking of carbon nanotube thin films
05/22/2014US20140138611 IN NANOWIRE, DEVICE USING THE SAME AND METHOD OF MANUFACTURING In NANOWIRE
05/22/2014DE112012002543T5 Niedrige Schwellenspannung und Skalierung der Inversionsoxiddicke für einen Mosfet vom P-Typ mit High-K-Metall-Gate Low threshold voltage and scaling of Inversionsoxiddicke for a P-type MOSFET with high-k metal gate
05/22/2014DE112004001864B4 Verfahren und Vorrichtung zur Verbesserung der Stabilität einer 6-Transistor-CMOS-SRAM-Zelle A method and apparatus for improving the stability of a 6-transistor CMOS SRAM cell
05/22/2014DE102013223414A1 Ein pseudomorphischer Transistor mit hoher Elektronenmobilität, welcher eine dotierte Niedrig-Temperatur Pufferschicht aufweist A high electron mobility transistor pseudomorphischer having a doped low-temperature buffer layer
05/22/2014DE102013112862A1 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
05/22/2014DE102013112817A1 Verfahren zum Herstellen einer elektronischen Komponente A method of manufacturing an electronic component
05/22/2014DE102013112283A1 Sperrschichtisolierte Sperrspannungsvorrichtungen mit integrierten Schutzstrukturen und Verfahren zu deren Bildung Isolated reverse voltage blocking layer devices with built-in protection structures and methods for their formation
05/22/2014DE102013106621B3 Method for forming fin field effect transistor and/or MOSFET, involves forming indents in end of gate electrodes, where indents at bottom edge are formed along interface of gate electrodes and dielectric sheet
05/22/2014DE102013104236A1 Versetzungssprung-Design in integrierten Schaltungen Displacement jump design in integrated circuits
05/22/2014DE102012220314B4 Verfahren zur Herstellung einer transparenten Kohlenstoff-Nanoröhren-Graphen-Hybriddünnschicht, Nanoröhren-Graphen-Hybriddünnschicht und Feldeffekttransistor mit dieser A method for producing a transparent carbon nanotube-graphene hybrid thin film nanotube-graphene hybrid thin film field effect transistor and with this
05/22/2014DE102012215988B4 CET und GATE-Leckstromverringerung in Metall-GATE-Elektrodenstrukturen mit grossem ε CET and GATE-leakage current reduction in metal gate electrodes structures with large ε
05/22/2014DE102012022688A1 Capacitor for use during generation of electricity, has current collectors, high surface area porous electrode and semiconductor, where electrode is electrically and conductively connected to current collectors
05/22/2014DE102009051828B4 Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung A semiconductor device comprising recombination and digging and process for its preparation
05/22/2014DE102006018234B4 Verfahren zum Herstellen eines Charge-trapping-Bauelementes mit einem durch die Implantation eingestellten Dotierstoffprofil A method of manufacturing a charge-trapping device having a dopant profile set by the implantation
05/22/2014DE102004051839B4 Verfahren zum Herstellen eines Dünnschichttransistorarray-Substrats A method of fabricating a thin film transistor array substrate
05/21/2014EP2733746A1 Semiconductor device and method for manufacturing semiconductor device
05/21/2014EP2733745A1 Pixel unit structure, array substrate and display device
05/21/2014EP2733726A1 Method for manufacturing semiconductor device
05/21/2014EP2733724A1 Method for cleaning metal gate semiconductor
05/21/2014EP2732476A1 Diode element and detecting device
05/21/2014EP2732471A1 Insulated gate transistor and method of production thereof
05/21/2014CN203607418U 复合快恢复二极管 Composite fast recovery diode
05/21/2014CN203607417U 一种沟槽型快恢复二极管 One kind of trench-type fast recovery diode
05/21/2014CN203607411U 集成续流二极管的功率半导体器件 Integrated freewheeling diode power semiconductor devices
05/21/2014CN103814445A 场效应晶体管装置、用于感测变形的设备和方法 Field effect transistor means, for sensing deformation measuring apparatus and method
05/21/2014CN103814444A 高电压mosfet及其制造方法 A high voltage and a manufacturing method mosfet
05/21/2014CN103814437A 复合基板的制造方法及复合基板 The method of manufacturing a composite substrate and a composite substrate
05/21/2014CN103814432A 增大蚀刻液蚀刻用量的铜/钼合金膜的蚀刻方法 Etching method to increase the amount of copper etching solution / molybdenum alloy film
05/21/2014CN103814282A 硅化物间隙薄膜晶体管 Silicide film transistor gap
05/21/2014CN103811562A 变容二极管、电器件及其制造方法 Varactor diode, and a manufacturing method of the electrical device
05/21/2014CN103811561A 半导体装置 Semiconductor device
05/21/2014CN103811560A 钳位二极管及其版图结构和其制造方法 Clamping diodes and layout structure and its manufacturing method
05/21/2014CN103811559A 一种具有双极型工作特性的薄膜晶体管 A thin film transistor having a bipolar operating characteristics
05/21/2014CN103811558A 一种薄膜晶体管及其制作方法、阵列基板和显示装置 A thin film transistor and manufacturing method, the array substrate and display device
05/21/2014CN103811557A 无掺杂GeSn量子阱的金属氧化物半导体场效应晶体管 A non-doped quantum well GeSn metal oxide semiconductor field effect transistor
05/21/2014CN103811556A 硅衬底的三氧化二铝栅介质双栅石墨烯晶体管及制备方法 Aluminum oxide gate dielectric double-gate transistor and a graphene prepared silicon substrate
05/21/2014CN103811555A 在多晶硅栅电极中具有金属填充的凹槽的半导体器件 A semiconductor device having a metal-filled grooves in the polysilicon gate electrode
05/21/2014CN103811554A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811553A 带有通过电阻器电路互连的有源器件和隔离结构的半导体器件和驱动电路及其制作方法 The semiconductor device and driver circuit having an active device and the isolation structure are interconnected via a resistor and its manufacturing method of the circuit
05/21/2014CN103811552A 半导体装置及其形成方法 Semiconductor device and method of forming
05/21/2014CN103811551A 包括用于栅极电极的低k电介质帽层的半导体器件及相关方法 A semiconductor device including a low k dielectric cap layers and associated methods for the gate electrode,
05/21/2014CN103811550A 半导体器件的接触结构 Contact structure of a semiconductor device
05/21/2014CN103811549A 横向mosfet Lateral mosfet
05/21/2014CN103811548A 具有低密勒电容的金氧半场效应晶体管器件及其制作方法 Gold oxygen half-effect transistor device and manufacturing method has a low Miller capacitance
05/21/2014CN103811547A 降低ldmos器件峰值电场的版图结构及方法 Ldmos layout structure and method to reduce peak electric field of the device
05/21/2014CN103811546A 带面结型场效应管的ldmos复合管 With junction type FET ldmos composite pipe
05/21/2014CN103811545A 一种改善扩散区域形貌的功率器件及其制造方法 A method for improving the morphology of the diffusion region and a manufacturing method of a power device
05/21/2014CN103811544A 漂移区具有横向浓度梯度的ldmos管及其制造方法 The drift region having a tube and a method of manufacturing a lateral ldmos concentration gradient
05/21/2014CN103811543A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811542A 一种锡化物超晶格势垒半导体晶体管 One kind of tin compound semiconductor superlattice barrier transistor
05/21/2014CN103811541A 功率半导体器件 Power semiconductor devices
05/21/2014CN103811540A 锗硅hbt晶体管及其版图结构和其制造方法 SiGe hbt transistor and layout structure and its manufacturing method
05/21/2014CN103811539A 用于双向高压esd防护的双载子晶体管 Esd protection for bi-directional high voltage Bipolar Transistor
05/21/2014CN103811538A 具有器件收益和生产率改进的金属栅极结构 Device revenue and productivity has improved metal gate structure
05/21/2014CN103811537A 一种大尺寸晶圆及其制备方法 One kind of large-size wafers and its preparation method
05/21/2014CN103811536A 圆片级封装工艺晶圆减薄结构 Wafer level packaging process wafer thinning structure
05/21/2014CN103811535A 保护半导体鳍不受侵蚀的结构及其制造方法 Protection structure and method of manufacturing a semiconductor fin from erosion
05/21/2014CN103811502A 阵列基板、阵列基板的制备方法、显示装置 Preparation array substrate, the array substrate, a display device
05/21/2014CN103811490A 带有由二极管电路互连的有源器件和隔离结构的半导体器件和驱动电路及制造方法 And a driver circuit with a semiconductor device and manufacturing method of the active device and the isolation structure are interconnected by a diode circuit
05/21/2014CN103811484A 包括半导体鳍的esd器件 Esd device includes a semiconductor fin
05/21/2014CN103811477A 半导体单元 Semiconductor unit
05/21/2014CN103811446A 一种半导体器件中的铜线键接结构及其制造方法 A semiconductor device bonded to the copper structure and manufacturing method
05/21/2014CN103811425A 一种可以防止光透射的晶闸管封装壳及晶闸管 A way to prevent the light transmittance of the enclosure and the thyristor SCR
05/21/2014CN103811424A 全压接封装高压半导体器件 Full-voltage semiconductor device package crimp
05/21/2014CN103811353A 一种结型场效应晶体管及其制备方法 A junction field effect transistor and its preparation method
05/21/2014CN103811352A 具有GeSn源漏的MOSFET及其形成方法 Source and drain of the MOSFET has GeSn and method of forming
05/21/2014CN103811350A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811349A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
05/21/2014CN103811348A Mos器件及其形成方法 Mos device and method for forming
05/21/2014CN103811346A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811345A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811344A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811343A FinFET及其制造方法 And a method of manufacturing FinFET
05/21/2014CN103811342A 鳍结构及其制造方法 Fin structure and manufacturing method
05/21/2014CN103811341A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811340A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811339A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811338A 一种半导体器件及其制备方法 A semiconductor device and its preparation method
05/21/2014CN103811336A 低功率应用的igbt功率器件及其制造方法 Igbt power device and method for manufacturing low-power applications
05/21/2014CN103811326A 用于中间隙半导体设备的金属栅极结构及其制造方法 Metal gate structure and a manufacturing method of a semiconductor apparatus for clearance
05/21/2014CN103811323A 鳍部的制作方法、鳍式场效应晶体管及其制作方法 Production methods fin, the fin-type field effect transistor and manufacturing method thereof
05/21/2014CN103811322A 半导体结构及其形成方法 And a method for forming a semiconductor structure
05/21/2014CN103811321A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/21/2014CN103811320A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
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