Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/17/2014US8754409 Field-effect transistor, and memory and semiconductor circuit including the same
06/17/2014US8754408 Organic EL illumination device
06/17/2014US8754406 Organic light emitting diode device with a plurality of buffer layers and method of manufacturing the same
06/17/2014US8754404 Organic light emitting diode display
06/17/2014US8754403 Epitaxial source/drain contacts self-aligned to gates for deposited FET channels
06/17/2014US8754401 Impact ionization field-effect transistor
06/17/2014US8754400 Two-dimensional patterning employing self-assembled material
06/17/2014US8754398 Light-emitting diode, light-emitting diode lamp and lighting device
06/17/2014US8754397 CNT-based electronic and photonic devices
06/17/2014US8754396 Stretchable form of single crystal silicon for high performance electronics on rubber substrates
06/17/2014US8754395 Semiconductor device and method of manufacturing the same
06/17/2014US8754392 Carbon-based memory element
06/17/2014US8754391 Nonvolatile memory devices and methods of fabricating the same
06/17/2014US8753995 Ceramic dielectric material matched with nickel internal electrode and method for producing capacitor using same
06/17/2014US8753966 Method for fabricating buried gates using pre landing plugs
06/17/2014US8753964 FinFET structure having fully silicided fin
06/17/2014US8753962 Method for producing epitaxial wafer
06/17/2014US8753956 Semiconductor structure and fabrication method
06/17/2014US8753942 Silicon and silicon germanium nanowire structures
06/17/2014US8753935 High frequency switching MOSFETs with low output capacitance using a depletable P-shield
06/17/2014US8753919 Memory cells and methods of forming memory cells
06/17/2014US8753899 Magnetoresistive random access memory (MRAM) device and fabrication methods thereof
06/13/2014DE202014004422U1 Bauteil mit Rand Component with edge
06/12/2014WO2014089438A1 Composite hardmask for finfet structures
06/12/2014WO2014088658A1 Bipolar junction transistors with reduced base-collector junction capacitance and method of manufacturing the same
06/12/2014WO2014088189A1 Method for forming flattened film comprising uv curable organosiloxane resin, and flattened film formed thereby
06/12/2014WO2014088021A1 Acceleration sensor
06/12/2014WO2014088020A1 Piezoresistive mems sensor
06/12/2014WO2014087986A1 Semiconductor device and power conversion device using same
06/12/2014WO2014087975A1 Semiconductor device
06/12/2014WO2014087829A1 Thin film transistor and method for manufacturing same
06/12/2014WO2014087749A1 Thermoelectric conversion element, method for using same, and method for manufacturing same
06/12/2014WO2014087742A1 Semiconductor device manufacturing method and semiconductor device
06/12/2014WO2014087633A1 Semiconductor device having vertical mosfet of super junction structure, and method for production of same
06/12/2014WO2014087601A1 Semiconductor device and method for manufacturing same
06/12/2014WO2014087600A1 Semiconductor device and method for manufacturing same
06/12/2014WO2014087543A1 Method for producing semiconductor device
06/12/2014WO2014087522A1 Semiconductor device
06/12/2014WO2014087499A1 Semiconductor device
06/12/2014WO2014087300A1 Heteroacene compounds for organic electronics
06/12/2014WO2014086479A1 Semiconductor device, integrated circuit and method of forming a semiconductor device
06/12/2014WO2014086075A1 Igbt structure and manufacturing method thereof
06/12/2014WO2014086059A1 Finfet and manufacturing method thereof
06/12/2014WO2014086058A1 Finfet and manufacturing method thereof
06/12/2014WO2014086054A1 Method for manufacturing dummy gate in gate last process and dummy gate in gate last process
06/12/2014WO2014086053A1 Method for manufacturing dummy gate in gate last process and dummy gate in gate last process
06/12/2014WO2014086016A1 Rc-igbt and manufacturing method therefor
06/12/2014WO2014086015A1 Ti-igbt and formation method thereof
06/12/2014WO2014086014A1 Itc-igbt and manufacturing method therefor
06/12/2014WO2014086013A1 Igbt and cell structure thereof, and method for forming igbt
06/12/2014WO2014086011A1 Rb-igbt manufacturing method
06/12/2014WO2014085971A1 Metallic oxide tft device and manufacturing method
06/12/2014US20140162446 Method for removing hard mask oxide and making gate structure of semiconductor devices
06/12/2014US20140162442 Method of reducing contact resistance
06/12/2014US20140162438 Devices Formed from a Non-Polar Plane of a Crystalline Material and Method of Making the Same
06/12/2014US20140162426 Bipolar transistor manufacturing method, bipolar transistor and integrated circuit
06/12/2014US20140162425 Method of forming dielectric films using a plurality of oxidation gases
06/12/2014US20140162424 Method for fabricating semiconductor device
06/12/2014US20140162422 Apparatus and Method for Power MOS Transistor
06/12/2014US20140162421 Semiconductor devices with field plates
06/12/2014US20140162420 Method of fabricating semiconductor devices having vertical cells
06/12/2014US20140162418 Methods of Forming Vertically-Stacked Structures, and Methods of Forming Vertically-Stacked Memory Cells
06/12/2014US20140162417 Method for fabricating a semiconductor device
06/12/2014US20140162416 Aluminum gallium nitride etch stop layer for gallium nitride based devices
06/12/2014US20140162414 Technique for selectively processing three dimensional device
06/12/2014US20140162413 Method for manufacturing semiconductor device
06/12/2014US20140162406 Flexible semiconductor device and method of manufacturing the same
06/12/2014US20140162402 Semiconductor device and manufacturing method thereof
06/12/2014US20140161706 Method and apparatus of forming metal compound film, and electronic product
06/12/2014US20140160854 Non-volatile memory devices and methods of operating the same
06/12/2014US20140160852 Semiconductor device and manufacturing method and operating method for the same
06/12/2014US20140160841 Self-aligned floating gate in a vertical memory structure
06/12/2014US20140160827 Bipolar-MOS Memory Circuit
06/12/2014US20140160628 Structure to make supercapacitor
06/12/2014US20140160390 Semiconductor Device and Method of Manufacturing the Semiconductor Device
06/12/2014US20140160385 Semiconductor device and fabrication method thereof
06/12/2014US20140159242 Patterning transition metals in integrated circuits
06/12/2014US20140159211 Semiconductor structure and process thereof
06/12/2014US20140159210 Vertical outgassing channels
06/12/2014US20140159209 Manufacturing method for a micromechanical component and a corresponding micromechanical component
06/12/2014US20140159208 III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate
06/12/2014US20140159207 ESD Protection Structure, Integrated Circuit and Semiconductor Device
06/12/2014US20140159206 Methods and Apparatus for ESD Structures
06/12/2014US20140159205 Low OFF-State Leakage Current Field Effect Transistors
06/12/2014US20140159195 Decoupling capacitor and method of making same
06/12/2014US20140159194 Semiconductor device
06/12/2014US20140159193 Semiconductor device and method for fabricating the same
06/12/2014US20140159192 Semiconductor device
06/12/2014US20140159180 Semiconductor resistor structure and semiconductor photomultiplier device
06/12/2014US20140159172 Transistors, Semiconductor Devices, and electronic devices including transistor gates with conductive elements including cobalt silicide
06/12/2014US20140159171 Methods of forming bulk finfet semiconductor devices by performing a liner recessing process to define fin heights and finfet devices with such a recessed liner
06/12/2014US20140159170 Semiconductor device dielectric interface layer
06/12/2014US20140159169 Recessing and capping of gate structures with varying metal compositions
06/12/2014US20140159168 Deep depleted channel mosfet with minimized dopant fluctuation and diffusion levels
06/12/2014US20140159167 Preventing fin erosion and limiting epi overburden in finfet structures by composite hardmask
06/12/2014US20140159166 Preventing FIN Erosion and Limiting Epi Overburden in FinFET Structures by Composite Hardmask
06/12/2014US20140159165 Faceted finfet
06/12/2014US20140159162 Bulk finfet with super steep retrograde well
06/12/2014US20140159161 Measurement of cmos device channel strain by x-ray diffraction
06/12/2014US20140159159 Wrap-around trench contact structure and methods of fabrication
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