Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/12/2014US20140159157 Antenna diode circuitry and method of manufacture
06/12/2014US20140159155 High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
06/12/2014US20140159154 Semiconductor Device with an Insulating Structure for Insulating an Electrode from a Semiconductor Body
06/12/2014US20140159153 Rf ldmos device and method of forming the same
06/12/2014US20140159152 Power semiconductor device
06/12/2014US20140159151 Power MOS Device Structure
06/12/2014US20140159150 Semiconductor device and semiconductor device manufacturing method
06/12/2014US20140159149 Short channel trench mosfets
06/12/2014US20140159148 Semiconductor device and manufacturing method thereof
06/12/2014US20140159147 Semiconductor device
06/12/2014US20140159146 Trench gate transistor and method of fabricating same
06/12/2014US20140159145 Semiconductor device
06/12/2014US20140159144 Trench gate mosfet and method of forming the same
06/12/2014US20140159143 Super junction semiconductor device and associated fabrication method
06/12/2014US20140159142 Recessed Channel Insulated-Gate Field Effect Transistor with Self-Aligned Gate and Increased Channel Length
06/12/2014US20140159141 Insulating gate field effect transistor device and method for providing the same
06/12/2014US20140159140 Buried word line structure and method of forming the same
06/12/2014US20140159139 Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain
06/12/2014US20140159137 Gate structure in non-volatile memory device
06/12/2014US20140159134 Non-volatile memory and manufacturing method thereof
06/12/2014US20140159133 Non-volatile memory circuit
06/12/2014US20140159132 Memory arrays with air gaps between conductors and the formation thereof
06/12/2014US20140159126 Methods of forming a finfet semiconductor device with undoped fins
06/12/2014US20140159125 Contact landing pads for a semiconductor device and methods of making same
06/12/2014US20140159124 Epitaxial grown extremely shallow extension region
06/12/2014US20140159123 Etch resistant raised isolation for semiconductor devices
06/12/2014US20140159122 Semiconductor pressure sensor and fabrication method thereof
06/12/2014US20140159120 Conformal Doping
06/12/2014US20140159119 Method for Growing III-V Epitaxial Layers and Semiconductor Structure
06/12/2014US20140159118 III-Nitride Transistor with Source-Connected Heat Spreading Plate
06/12/2014US20140159117 Semiconductor device and method of manufacturing the semiconductor device
06/12/2014US20140159116 III-Nitride Device Having an Enhanced Field Plate
06/12/2014US20140159115 Transistor and method of fabricating the same
06/12/2014US20140159114 Vertical nanowire based hetero-structure split gate memory
06/12/2014US20140159113 Implant damage control by in-situ c doping during sige epitaxy for device applications
06/12/2014US20140159112 Method for forming group iii/v conformal layers on silicon substrates
06/12/2014US20140159111 Semiconductor composite film with heterojunction and manufacturing method thereof
06/12/2014US20140159110 Semiconductor device and operating method for the same
06/12/2014US20140159109 Semiconductor device
06/12/2014US20140159107 Semiconductor device
06/12/2014US20140159106 Power semiconductor device and method for manufacturing the same
06/12/2014US20140159105 Power semiconductor device
06/12/2014US20140159104 Semiconductor device
06/12/2014US20140159103 Partial soi on power device for breakdown voltage improvement
06/12/2014US20140159102 High holding voltage electrostatic discharge protection device
06/12/2014US20140159058 Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
06/12/2014US20140159057 Silicon carbide semiconductor device and method for manufacturing the same
06/12/2014US20140159056 Silicon carbide semiconductor device and method for manufacturing the same
06/12/2014US20140159055 Substrates for semiconductor devices
06/12/2014US20140159054 Power module semiconductor device
06/12/2014US20140159053 Sic trench gate transistor with segmented field shielding region and method of fabricating the same
06/12/2014US20140159052 Method and structure for transistor with reduced drain-induced barrier lowering and on resistance
06/12/2014US20140159051 Monolithically integrated vertical jfet and schottky diode
06/12/2014US20140159050 Field effect transistor and method of fabricating the same
06/12/2014US20140159049 Semiconductor device and method of manufacturing the same
06/12/2014US20140159048 High Electron Mobility Transistor and Manufacturing Method Thereof
06/12/2014US20140159047 Manufacturing process of oxide insulating layer and flexible structure of ltps-tft (low-temperature polycrystalline silicon thin film transistor) display
06/12/2014US20140159045 Semiconductor device
06/12/2014US20140159044 Thin-film transistor and method for manufacturing thin-film transistor
06/12/2014US20140159043 Active matrix display panel with ground tie lines
06/12/2014US20140159042 Top down aluminum induced crystallization for high efficiency photovoltaics
06/12/2014US20140159039 Thin film transistor with two-dimensional doping array
06/12/2014US20140159038 Complementary metal oxide semiconductor circuit structure, preparation method thereof and display device
06/12/2014US20140159036 Oxide transistor with nano-layered structure and method of fabricating the same
06/12/2014US20140159035 Transistors, methods of manufacturing transistors, and electronic devices including transistors
06/12/2014US20140159033 Array substrate and method of fabricating the same
06/12/2014US20140159008 Double gate type thin film transistor and organic light emitting diode display including the same
06/12/2014US20140158990 Tunneling Field Effect Transistor (TFET) With Ultra Shallow Pockets Formed By Asymmetric Ion Implantation and Method of Making Same
06/12/2014US20140158989 Electronic device including graphene
06/12/2014US20140158988 Graphene transistor
06/12/2014US20140158986 Highly Conductive Nano-structures incorporated in Semiconductor Nanocomposites
06/12/2014US20140158985 Semiconductor heterostructure field effect transistor and method for making thereof
06/12/2014US20140158984 Semiconductor structure
06/12/2014US20140158980 Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers
06/12/2014US20140158976 Iii-n semiconductor-on-silicon structures and techniques
06/12/2014DE112010000774T5 Solarzellenverfahren und -strukturen Solar cells procedures and structures
06/12/2014DE10311076B4 Kapazitive Vorrichtung Capacitive device
06/12/2014DE10310339B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
06/12/2014DE102013223887A1 Halbleitereinrichtung Semiconductor device
06/12/2014DE102013113740A1 ESD-Schutzstruktur, integrierte Schaltung und Halbleiterbauelement ESD protection structure, integrated circuit and semiconductor device
06/12/2014DE102005054672B4 Hochvolt-Transistor mit niedriger Threshold-Spannung und einen solchen Hochvolt-Transistor umfassendes Bauelement High-voltage transistor with low threshold voltage and high-voltage transistor such a comprehensive component
06/11/2014EP2741337A1 Semiconductor heterostructure field effect transistor and method for making thereof
06/11/2014EP2741336A1 Semiconductor device, and manufacturing method for same
06/11/2014EP2741335A1 Transistors, methods of manufacturing transistors, and electronic devices including transistors
06/11/2014EP2741332A2 Array substrate and method of fabricating the same
06/11/2014EP2741324A1 III nitride transistor with source connected heat-spreading plate
06/11/2014EP2741320A1 FinFET device with dual-strained channels and method for manufacturing thereof
06/11/2014EP2741319A1 Field effect transistor
06/11/2014EP2741314A2 Method of manufacturing a poly-crystalline silicon layer, method of manufacturing an organic light-emitting display apparatus including the same, and organic light-emitting display apparatus manufactured by using the same
06/11/2014EP2740156A2 Maintenance management systems and methods
06/11/2014EP2740155A1 Super-junction-schottky-pin-diode
06/11/2014EP2739563A1 Optoelectronic platform with carbon based conductor and quantum dots, and transistor comprising such a platform
06/11/2014CN203644793U 一种抗温度冲击的二极管 An anti-diode temperature shock
06/11/2014CN203644792U 金属氧化物半导体薄膜晶体管 Metal oxide semiconductor thin film transistor
06/11/2014CN203644791U 一种基于soi工艺的漏源区介质/pn结隔离前栅p/n-mosfet射频开关超低损耗器件 Based on the drain-source region soi technology media / pn junction isolation front gate p / n-mosfet low loss RF switch devices
06/11/2014CN203644790U 基于soi工艺的漏/源区介质(pn结)隔离前栅p-mosfet射频开关超低损耗器件 Soi-based technology drain / source regions medium (pn junction) isolated front gate p-mosfet low loss RF switch devices
06/11/2014CN203644789U 基于soi工艺的漏/源区介质(pn结)隔离前栅n-mosfet射频开关超低损耗器件 Soi-based technology drain / source regions medium (pn junction) isolated front gate n-mosfet low loss RF switch devices
06/11/2014CN203644788U 基于soi工艺的背栅漏/源半浮前栅p-mosfet射频开关零损耗器件 Soi-based process back gate and drain / source and a half before floating-gate p-mosfet zero loss RF switch devices
06/11/2014CN203644787U 一种优化栅n沟道vdmos功率器件 An optimized gate n-channel power devices vdmos
06/11/2014CN203644786U 超低电容固体放电管 Ultra-low capacitance solid discharge
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