Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/05/2014US20140151802 Semiconductor Device Having SSOI Substrate
06/05/2014US20140151800 Lateral double-diffused mosfet
06/05/2014US20140151799 Double Diffused Drain Metal Oxide Semiconductor Device and Manufacturing Method Thereof
06/05/2014US20140151798 Semiconductor Device and Method of Manufacturing a Semiconductor Device
06/05/2014US20140151796 Hybrid high voltage device and manufacturing method thereof
06/05/2014US20140151793 Semiconductor device
06/05/2014US20140151792 High voltage high side dmos and the method for forming thereof
06/05/2014US20140151790 Approach to integrate schottky in mosfet
06/05/2014US20140151788 Trench power field effect transistor device and method
06/05/2014US20140151787 Electronic device including a trench and a conductive structure therein
06/05/2014US20140151786 Non-volatile graphene nanomechanical switch
06/05/2014US20140151785 Semiconductor device
06/05/2014US20140151784 Semiconductor memory device and method of manufacturing the same
06/05/2014US20140151782 Methods and Apparatus for Non-Volatile Memory Cells with Increased Programming Efficiency
06/05/2014US20140151781 Process for fabricating a transistor comprising nanocrystals
06/05/2014US20140151780 Nonvolatile memory device and method of fabricating the same
06/05/2014US20140151779 Semiconductor memory device and method of manufacturing the same
06/05/2014US20140151777 Semiconductor Memory Devices and Methods of Fabricating the Same
06/05/2014US20140151776 Vertical memory cell
06/05/2014US20140151775 Control gate
06/05/2014US20140151774 Nand flash memory with vertical cell stack structure and method for manufacturing same
06/05/2014US20140151772 Uniform finfet gate height
06/05/2014US20140151771 Thin film deposition and logic device
06/05/2014US20140151770 Thin film deposition and logic device
06/05/2014US20140151767 Method for producing semiconductor device and semiconductor device
06/05/2014US20140151766 FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTURING THEREOF
06/05/2014US20140151765 Gate-all-around carbon nanotube transistor with selectively doped spacers
06/05/2014US20140151764 Semiconductor and manufacturing method thereof
06/05/2014US20140151763 Semiconductor structure having contact plug and method of making the same
06/05/2014US20140151762 Semiconductor Device and Method of Forming the Same
06/05/2014US20140151761 Fin-Like Field Effect Transistor (FinFET) Channel Profile Engineering Method And Associated Device
06/05/2014US20140151760 Doped flowable pre-metal dielectric
06/05/2014US20140151759 Facet-free strained silicon transistor
06/05/2014US20140151758 Semiconductor Device and Method of Manufacturing a Semiconductor Device
06/05/2014US20140151757 Substrate-templated epitaxial source/drain contact structures
06/05/2014US20140151756 Fin field effect transistors including complimentarily stressed channels
06/05/2014US20140151755 Backside cmos compatible biofet with no plasma induced damage
06/05/2014US20140151750 Heterojunction bipolar transistor
06/05/2014US20140151749 High electron mobility transistor and method of manufacturing the same
06/05/2014US20140151748 Compound semiconductor device and manufacturing method of the same
06/05/2014US20140151747 High electron mobility transistor including plurality of gate electrodes
06/05/2014US20140151746 Finfet device with isolated channel
06/05/2014US20140151744 Power semiconductor devices
06/05/2014US20140151743 Electrostatic discharge protection device
06/05/2014US20140151719 Silicon carbide semiconductor element
06/05/2014US20140151717 Packaged Vertical Power Device Comprising Compressive Stress and Method of Making a Packaged Vertical Power Device
06/05/2014US20140151716 Process for the manufacture of a doped iii-n bulk crystal and a free-standing iii-n substrate, and doped iii-n bulk crystal and free-standing iii-n substrate as such
06/05/2014US20140151713 Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
06/05/2014US20140151712 Enhancement-mode high electron mobility transistor structure and method of making same
06/05/2014US20140151710 Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
06/05/2014US20140151708 Thin film transistor, display device and method of manufacturing the same
06/05/2014US20140151707 Light emitting device
06/05/2014US20140151706 Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
06/05/2014US20140151705 Nanowires, nanowire fielde-effect transistors and fabrication method
06/05/2014US20140151704 Method, System, and Apparatus for Preparing Substrates and Bonding Semiconductor Layers to Substrates
06/05/2014US20140151701 Embedded chip package, a chip package, and a method for manufacturing an embedded chip package
06/05/2014US20140151695 Semiconductor Device And Method For Manufacturing The Same
06/05/2014US20140151694 Metal oxide tft with improved source/drain contacts
06/05/2014US20140151693 Semiconductor device and method for manufacturing semiconductor device
06/05/2014US20140151692 Semiconductor device and method for manufacturing semiconductor device
06/05/2014US20140151691 Semiconductor device
06/05/2014US20140151690 Semiconductor materials, transistors including the same, and electronic devices including transistors
06/05/2014US20140151688 Semiconductor device
06/05/2014US20140151687 Semiconductor device and manufacturing method thereof
06/05/2014US20140151686 Semiconductor device and method for manufacturing the same
06/05/2014US20140151685 Semiconductor device
06/05/2014US20140151684 X-ray detector
06/05/2014US20140151683 Thin film transistor
06/05/2014US20140151682 Circuit board, display device, and process for production of circuit board
06/05/2014US20140151644 Heterojunction tunneling field effect transistors, and methods for fabricating the same
06/05/2014US20140151643 Self-aligned double-gate graphene transistor
06/05/2014US20140151642 3d rfics with ultra-thin semiconductor materials
06/05/2014US20140151641 3d rfics with ultra-thin semiconductor materials
06/05/2014US20140151640 Self-aligned double-gate graphene transistor
06/05/2014US20140151637 Transistors and fabrication method thereof
06/05/2014US20140151620 Self-aligned wire for spintronic device
06/05/2014US20140150860 Electronic device from dissipative quantum dots
06/05/2014DE112012003834T5 Lateraler Ätzstopp für einen Nems-Ablöseätzvorgang für eine monolithische Nems/Cmos-Integration mit hoher Dichte Lateral etch stop for a Nems Nems-Ablöseätzvorgang for monolithic / CMOS high-density integration
06/05/2014DE102013113343A1 Halbleitervorrichtung mit einer rippe und einem drain-ausdehnungsbereich sowie herstellungsverfahren A semiconductor device comprising a rib and a drain-range expansion and manufacturing processes
06/05/2014DE102013113286A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
06/05/2014DE102013113284A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
06/05/2014DE102013112608A1 Halbleitervorrichtung mit Trenches und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device having trenches and method of manufacturing a semiconductor device
06/05/2014DE102013019579A1 CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit verringerter Temperaturhysterese CMOS compatible pressure sensor on tunnel effect base with reduced temperature hysteresis
06/05/2014DE102012221932A1 Field-effect transistor used for switching circuit and/or micro fluid system as sensor for detecting fluid, has rolled multilayer structure comprising thin-layers comprising semiconductor material and electrical leading gate material
06/05/2014DE102008000660B4 Siliziumkarbid-Halbleitervorrichtung Silicon carbide semiconductor device
06/04/2014EP2738933A1 System and method for improving power conversion efficiency
06/04/2014EP2738815A1 Semiconductor materials, transistors including the same, and electronic devices including transistors
06/04/2014EP2738814A1 Finfet device with isolated channel
06/04/2014EP2738813A2 Semiconductor device including alternating source and drain regions, and respective source and drain metallic strips
06/04/2014EP2738809A2 Semiconductor device including gate drivers around a periphery thereof
06/04/2014EP2737540A1 N-channel and p-channel finfet cell architecture
06/04/2014EP2737539A2 High voltage mosfet and method of making the same
06/04/2014EP2737538A1 AIN BUFFER N-POLAR GaN HEMT PROFILE
06/04/2014EP2737537A1 Iii-nitride metal insulator semiconductor field effect transistor
06/04/2014EP2737536A1 Nanopore sensors for biomolecular characterization
06/04/2014EP2737535A2 Ga-assisted growth of a gaasp nanostructure, gold-free gaasp nanostructure, and photovoltaic cell incorporating such a nanostructure
06/04/2014EP2737523A2 N-channel and p-channel finfet cell architecture with inter-block insulator
06/04/2014CN203631566U 肖特基二极管 Schottky diodes
06/04/2014CN203631565U 恒流二极管 Constant current diode
06/04/2014CN203631564U 氧化物薄膜晶体管及显示装置 Oxide thin film transistor and a display device
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