Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/27/2014US8735231 Manufacturing method of dual-gate thin film transistor
05/27/2014US8735228 Trench isolation MOS P-N junction diode device and method for manufacturing the same
05/27/2014US8735226 Methods and devices for forming nanostructure monolayers and devices including such monolayers
05/27/2014US8735223 Semiconductor devices and methods of assembling same
05/27/2014US8735217 Multifunctional electrode
05/27/2014US8735189 Flip light emitting diode chip and method of fabricating the same
05/22/2014WO2014078699A1 Semiconductor structure and recess formation etch technique
05/22/2014WO2014078293A1 Apparatus to prevent excess movement of mems components
05/22/2014WO2014078284A1 Apparatus for prevention of pressure transients in microphones
05/22/2014WO2014078238A1 Lateral gan jfet with vertical drift region
05/22/2014WO2014077936A2 Compensation for a charge in a silicon substrate
05/22/2014WO2014077903A1 Tunneling field effect transistors (tfets) for cmos architectures and approaches to fabricating n-type and p-type tfets
05/22/2014WO2014077862A1 Gan-based schottky diode having partially recessed anode
05/22/2014WO2014077861A1 Trench-based device with improved trench protection
05/22/2014WO2014077860A1 GaN-BASED SCHOTTKY DIODE HAVING DUAL METAL, PARTIALLY RECESSED ELECTRODE
05/22/2014WO2014077299A1 Angular acceleration sensor
05/22/2014WO2014077298A1 Angular acceleration sensor
05/22/2014WO2014077207A1 Semiconductor device
05/22/2014WO2014077201A1 Method for manufacturing semiconductor device and display device
05/22/2014WO2014077199A1 Method for etching semiconductor substrate and method for manufacturing semiconductor element
05/22/2014WO2014077106A1 Ultrasonic transducer element and ultrasonic endoscope
05/22/2014WO2014077039A1 Method for manufacturing silicon carbide semiconductor device
05/22/2014WO2014076916A1 Sputtering target, oxide semiconductor thin film, and method for producing these
05/22/2014WO2014075633A1 Chip structure for pressure sensor and method for fabricating same
05/22/2014WO2014075632A1 Trench mosfet and method for forming the same
05/22/2014WO2014075460A1 Complex joined igbt device and processing method therefor
05/22/2014WO2014008157A9 Nonvolatile charge trap memory device having a deuterated layer in a multy-layer charge-trapping region
05/22/2014US20140141605 Finfet formation using double patterning memorization
05/22/2014US20140141589 Semiconductor devices including a stressor in a recess and methods of forming the same
05/22/2014US20140141588 Strained transistor structure
05/22/2014US20140141587 Transistor with improved sigma-shaped embedded stressor and method of formation
05/22/2014US20140141586 Guard Rings on Fin Structures
05/22/2014US20140141585 Trench gate type semiconductor device and method of producing the same
05/22/2014US20140141584 Power semiconductor device and methods for fabricating the same
05/22/2014US20140141581 Method of manufacturing graphene nanomesh and method of manufacturing semiconductor device
05/22/2014US20140141580 Transistor with enhanced channel charge inducing material layer and threshold voltage control
05/22/2014US20140141579 Method of manufacturing low temperature polysilicon film, thin film transistor and manufacturing method thereof
05/22/2014US20140141577 Method of manufacturing thin film transistor array panel
05/22/2014US20140141576 Manufacturing Method for Switch and Array Substrate
05/22/2014US20140141573 Method for Preparing Switch Transistor and Equipment for Etching the Same
05/22/2014US20140141565 Gate insulator uniformity
05/22/2014US20140141545 Method for manufacturing display device
05/22/2014US20140140131 Three dimensional gate structures with horizontal extensions
05/22/2014US20140139776 Semiconductor Device and Method for Manufacturing the Same
05/22/2014US20140139762 Semiconductor device and method of fabricating the same
05/22/2014US20140139282 Embedded JFETs for High Voltage Applications
05/22/2014US20140138802 Method and Device for Manufacturing a Barrier Layer on a Flexible Substrate
05/22/2014US20140138801 Semiconductor patterning
05/22/2014US20140138800 Small pitch patterns and fabrication method
05/22/2014US20140138797 Dense finfet sram
05/22/2014US20140138796 Strain relaxation using metal materials and related structures
05/22/2014US20140138790 Inter-Layer Insulator for Electronic Devices and Apparatus for Forming Same
05/22/2014US20140138781 Dielectric equivalent thickness and capacitance scaling for semiconductor devices
05/22/2014US20140138780 Finfet having uniform doping profile and method of forming the same
05/22/2014US20140138779 Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
05/22/2014US20140138777 Integrated circuit device and method for making same
05/22/2014US20140138775 Dual epi cmos integration for planar substrates
05/22/2014US20140138774 Semiconductor device and manufacturing method thereof
05/22/2014US20140138770 Device with a Strained Fin
05/22/2014US20140138769 Semiconductor device and fabrication method
05/22/2014US20140138768 Semiconductor integrated circuit device having reduced unit cell area and method for manufacturing the same
05/22/2014US20140138767 Oxide terminated trench mosfet with three or four masks
05/22/2014US20140138766 Impact ionization devices, and methods of forming impact ionization devices
05/22/2014US20140138765 Semiconductor device and method of manufacturing the same
05/22/2014US20140138764 Trench-based device with improved trench protection
05/22/2014US20140138763 Semiconductor Integrated Device with Channel Region
05/22/2014US20140138762 Semiconductor device
05/22/2014US20140138761 Semiconductor device and manufacturing method of semiconductor device
05/22/2014US20140138758 Method of manufacturing semiconductor device and semiconductor device
05/22/2014US20140138757 Semiconductor devices including variable width floating gates, and apparatus for processing substrate
05/22/2014US20140138756 Three-dimensional nonvolatile memory devices including interposed floating gates
05/22/2014US20140138754 Memory cells having a plurality of control gates and memory cells having a control gate and a shield
05/22/2014US20140138753 Transistors, Memory Cells and Semiconductor Constructions
05/22/2014US20140138751 Metal gate structures for cmos transistor devices having reduced parasitic capacitance
05/22/2014US20140138750 Jog Design in Integrated Circuits
05/22/2014US20140138747 Hetero junction field effect transistor and method for manufacturing the same
05/22/2014US20140138746 Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
05/22/2014US20140138745 Semiconductor devices including a stressor in a recess and methods of forming the same
05/22/2014US20140138744 Tunneling field effect transistors (tfets) for cmos architectures and approaches to fabricating n-type and p-type tfets
05/22/2014US20140138743 Field effect transistor
05/22/2014US20140138742 Device Having Source/Drain Regions Regrown from Un-Relaxed Silicon Layer
05/22/2014US20140138741 Semiconductor structure and method for forming the same
05/22/2014US20140138739 Integrated power device on a semiconductor substrate having an improved trench gate structure
05/22/2014US20140138738 Semiconductor device
05/22/2014US20140138737 High voltage mosfet diode reverse recovery by minimizing p-body charges
05/22/2014US20140138736 Insulated gate bipolar transistor
05/22/2014US20140138735 Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
05/22/2014US20140138709 Silicon carbide substrate
05/22/2014US20140138708 Semiconductor device and method of manufacturing the same
05/22/2014US20140138705 Super surge diodes
05/22/2014US20140138704 Semiconductor device
05/22/2014US20140138703 Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body
05/22/2014US20140138702 Substrate recycling method and recycled substrate
05/22/2014US20140138701 Semiconductor device
05/22/2014US20140138700 Nitride-based semiconductor device and method for manufacturing the same
05/22/2014US20140138699 Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
05/22/2014US20140138698 GaN-BASED SCHOTTKY DIODE HAVING DUAL METAL, PARTIALLY RECESSED ELECTRODE
05/22/2014US20140138697 GaN-BASED SCHOTTKY DIODE HAVING PARTIALLY RECESSED ANODE
05/22/2014US20140138696 Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
05/22/2014US20140138695 Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus
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