Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2014
05/20/2014US8729519 Memory constructions
05/20/2014US8729486 MODFET active pixel X-ray detector
05/20/2014US8729387 Organic photoelectric conversion element, solar cell and optical sensor array
05/20/2014US8728923 Manufacturing method of semiconductor device
05/20/2014US8728915 Wafer laser-making method and die fabricated using the same
05/20/2014US8728885 Methods of forming a three-dimensional semiconductor device with a nanowire channel structure
05/20/2014US8728883 Semiconductor device and method for manufacturing semiconductor device
05/20/2014US8728877 Method for manufacturing silicon carbide semiconductor device with a single crystal substrate
05/20/2014US8728847 Solid-state imaging device and method for manufacturing the same
05/20/2014US8728846 Vertical thermoelectric structures
05/20/2014US8728832 Semiconductor device dielectric interface layer
05/20/2014CA2606980C Methods for manufacturing rfid tags and structures formed therefrom
05/15/2014WO2014074782A1 Programmable decoupling capacitance circuit
05/15/2014WO2014074777A1 Metal gate mos transistor with reduced gate-to-source and gate-to-drain overlap capacitance
05/15/2014WO2014074486A1 Group-iii nitride heterojunction bipolar transistors
05/15/2014WO2014074192A1 Method and structure for forming a localized soi finfet
05/15/2014WO2014074180A1 Nanopillar field-effect and junction transistors
05/15/2014WO2014073656A1 Semiconductor device and semiconductor device fabrication method
05/15/2014WO2014073631A1 Angular acceleration sensor and acceleration sensor
05/15/2014WO2014073591A1 Substrate for flexible device, flexible device and method for producing same, laminate and method for producing same, and resin composition
05/15/2014WO2014073585A1 Metal oxide film and method for forming metal oxide film
05/15/2014WO2014073452A1 Spin valve element
05/15/2014WO2014073361A1 Semiconductor device
05/15/2014WO2014073295A1 Field-effect transistor
05/15/2014WO2014073213A1 Sputtering target
05/15/2014WO2014073210A1 Sputtering target, oxide semiconductor thin film, and methods for producing these products
05/15/2014WO2014073168A1 Semiconductor device
05/15/2014WO2014073127A1 Semiconductor device and production method for same
05/15/2014WO2014073104A1 Semiconductor device manufacturing method, and semiconductor device
05/15/2014WO2014073103A1 Semiconductor device manufacturing method, and semiconductor device
05/15/2014WO2014072496A1 Active flexible-semiconductor devices and process for obtaining such a device
05/15/2014WO2014071754A1 Semiconductor structure and manufacturing method therefor
05/15/2014WO2014071693A1 Single-walled carbon nanotube positioning and growing method
05/15/2014WO2014071673A1 Transverse ultra-thin insulated gate bipolar transistor having high current density
05/15/2014WO2014071666A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071663A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071661A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071660A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071659A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071651A1 Semiconductor device and manufacturing method therefor
05/15/2014WO2014071649A1 Fin structure and manufacturing method therefor
05/15/2014WO2014071634A1 Self-aligned metal oxide thin film transistor device and manufacturing method
05/15/2014US20140135460 Low band gap copolymer and method for manufacturing same
05/15/2014US20140134837 Semiconductor device and method for fabricating the same
05/15/2014US20140134820 Methods for producing bipolar transistors with improved stability
05/15/2014US20140134819 Nanopillar field-effect and junction transistors
05/15/2014US20140134818 Method for forming epitaxial feature
05/15/2014US20140134817 Semiconductor device and method for manufacturing the same
05/15/2014US20140134815 High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
05/15/2014US20140134814 Methods of manufacturing integrated circuits having finfet structures with epitaxially formed source/drain regions
05/15/2014US20140134813 Fabrication of shielded gate trench mosfet with increased source-metal contact
05/15/2014US20140134812 Method of fabricating semiconductor device
05/15/2014US20140134808 Recessed gate field effect transistor
05/15/2014US20140134807 Igbt transistor with protection against parasitic component activation and manufacturing process thereof
05/15/2014US20140134795 Semiconductor element manufacturing method
05/15/2014US20140134780 Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device
05/15/2014US20140134779 Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device
05/15/2014US20140133244 Twin MONOS Array for High Speed Application
05/15/2014US20140132905 Array substrate and manufacture method of the same, liquid crystal display panel, and display device
05/15/2014US20140132875 Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same
05/15/2014US20140131868 Systems and Methods for Producing Low Work Function Electrodes
05/15/2014US20140131853 Electronic component, method of manufacturing same, composite module including electronic component, and method of manufacturing same
05/15/2014US20140131838 Semiconductor structure and method for manufacturing the same
05/15/2014US20140131837 Gan vertical bipolar transistor
05/15/2014US20140131835 Semiconductor device with rutile titanium oxide dielectric film
05/15/2014US20140131834 Decoupling capacitors for interposers
05/15/2014US20140131832 Method for manufacturing semiconductor layout pattern, method for manufacturing semiconductor device, and semiconductor device
05/15/2014US20140131817 Gap-fill keyhole repair using printable dielectric material
05/15/2014US20140131807 Semiconductor device and method of manufacturing the same
05/15/2014US20140131804 Semiconductor structure
05/15/2014US20140131801 Finfet spacer formation by oriented implantation
05/15/2014US20140131800 Compensation for a charge in a silicon substrate
05/15/2014US20140131799 Method and apparatus for selectively improving integrated device performance
05/15/2014US20140131798 Semiconductor device
05/15/2014US20140131797 Semiconductor structure and method for manufacturing the same
05/15/2014US20140131796 Rf ldmos device and fabrication method thereof
05/15/2014US20140131795 Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same
05/15/2014US20140131794 Innovative Approach of 4F² Driver Formation for High-Density RRAM and MRAM
05/15/2014US20140131793 Rectifier with vertical mos structure
05/15/2014US20140131792 Semiconductor Device with Metal-Filled Groove in Polysilicon Gate Electrode
05/15/2014US20140131791 Method for manufacturing a semiconductor device and semiconductor device
05/15/2014US20140131790 Field effect transistor devices with dopant free channels and back gates
05/15/2014US20140131789 Nonvolatile semiconductor storage device
05/15/2014US20140131788 Semiconductor devices with non-volatile memory cells
05/15/2014US20140131786 Semiconductor devices and methods of manufacturing the same
05/15/2014US20140131785 Semiconductor device and method of manufacturing the same
05/15/2014US20140131784 Semiconductor Constructions and Methods of Forming Semiconductor Constructions
05/15/2014US20140131782 Semiconductor device having diffusion barrier to reduce back channel leakage
05/15/2014US20140131777 Integrated circuits and methods for fabricating integrated circuits with salicide contacts on non-planar source/drain regions
05/15/2014US20140131776 Fin Recess Last Process for FinFET Fabrication
05/15/2014US20140131773 SELF-ALIGNED EMITTER-BASE IN ADVANCED BiCMOS TECHNOLOGY
05/15/2014US20140131772 Semiconductor devices with recessed base electrode
05/15/2014US20140131770 Co-integration of elemental semiconductor devices and compound semiconductor devices
05/15/2014US20140131769 Silicon-compatible compound junctionless field effect transistor
05/15/2014US20140131768 Bridge structure
05/15/2014US20140131767 Dual Compartment Semiconductor Package
05/15/2014US20140131766 Inhomogenous Power Semiconductor Devices
05/15/2014US20140131765 ESD Devices Comprising Semiconductor Fins
05/15/2014US20140131764 Structures and techniques for using semiconductor body to construct scr, diac, or triac
05/15/2014US20140131763 Self-bootstrapping field effect diode structures and methods
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