Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/10/2014US8748867 Light emitting device
06/10/2014US8748866 Nitride semiconductor light emitting device
06/10/2014US8748864 Light emitting device and method of fabricating the same
06/10/2014US8748863 Light emitting device
06/10/2014US8748862 Compound semiconductors
06/10/2014US8748861 Compound semiconductor device and method for manufacturing the same
06/10/2014US8748859 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
06/10/2014US8748311 Microelectronic devices and methods for filing vias in microelectronic devices
06/10/2014US8748300 Semiconductor device and method for manufacturing same
06/10/2014US8748298 Gallium nitride materials and methods associated with the same
06/10/2014US8748292 Methods of forming strained-semiconductor-on-insulator device structures
06/10/2014US8748286 Method of fabricating a nonvolatile memory device
06/10/2014US8748282 Semiconductor device and method of manufacturing the same
06/10/2014US8748274 Method for fabricating semiconductor device
06/10/2014US8748272 Method of introducing strain into channel and device manufactured by using the method
06/10/2014US8748271 LDMOS with improved breakdown voltage
06/10/2014US8748266 Method of fabricating semiconductor device
06/10/2014US8748252 Replacement metal gate transistors using bi-layer hardmask
06/10/2014US8748237 Memory device having an integrated two-terminal current limiting resistor
06/10/2014US8748236 Method for manufacturing semiconductor device
06/10/2014US8748224 Manufacturing method of semiconductor device
06/10/2014US8748222 Method for forming oxide thin film transistor
06/10/2014US8748215 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
06/10/2014US8748207 Hybrid MEMS RF switch and method of fabricating same
06/10/2014US8748204 Structure and method for III-nitride device isolation
06/10/2014US8748203 Method for making light emitting diode
06/10/2014US8748196 Coherent quantum information transfer between topological and conventional qubits
06/10/2014US8747700 Charge-transporting varnishes
06/10/2014CA2453318C Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
06/05/2014WO2014085410A1 Ambipolar vertical field effect transistor
06/05/2014WO2014085170A1 Integrated circuits and systems and methods for producing the same
06/05/2014WO2014085159A1 Schottky diodes and method of manufacturing the same
06/05/2014WO2014085108A1 Select gate formation for nanodot flat cell
06/05/2014WO2014084931A1 Field-effect nanosensor for biopolymer manipulation and detection
06/05/2014WO2014084406A1 Field-effect transistor, display element, image display device, and system
06/05/2014WO2014084152A1 Semiconductor device
06/05/2014WO2014084132A1 Apparatus and method for manufacturing same
06/05/2014WO2014084124A1 Semiconductor device
06/05/2014WO2014084051A1 Oxide semiconductor element, method for manufacturing oxide semiconductor element, display device and image sensor
06/05/2014WO2014084033A1 Pressure sensor device and pressure sensor device manufacturing method
06/05/2014WO2014083997A1 Non-volatile semiconductor storage device
06/05/2014WO2014083969A1 Silicon carbide semiconductor device, and method for producing same
06/05/2014WO2014083968A1 Silicon carbide semiconductor device, and manufacturing method for same
06/05/2014WO2014083943A1 Silicon carbide semiconductor device, and manufacturing method for same
06/05/2014WO2014083942A1 Silicon carbide semiconductor device, and manufacturing method for same
06/05/2014WO2014083924A1 Semiconductor device and method for manufacturing same
06/05/2014WO2014083843A1 Gyro sensor and composite sensor comprising gyro sensor
06/05/2014WO2014083771A1 Semiconductor element and method for manufacturing same
06/05/2014WO2014083731A1 Method for manufacturing display apparatus
06/05/2014WO2014083647A1 Method for manufacturing resin-sealed semiconductor device, and resin-sealed semiconductor device
06/05/2014WO2014082451A1 Strip-shaped gate tunneling field effect transistor with double diffusion and preparation method therefor
06/05/2014WO2014082351A1 Method for manufacturing fin structure
06/05/2014WO2014082342A1 P-type mosfet and manufacturing method thereof
06/05/2014WO2014082341A1 Method for manufacturing p-type mosfet
06/05/2014WO2014082340A1 Finfet and manufacturing method thereof
06/05/2014WO2014082339A1 Manufacturing method of n-type mosfet
06/05/2014WO2014082338A1 Method for manufacturing semiconductor device
06/05/2014WO2014082337A1 Semiconductor device and manufacturing method thereof
06/05/2014WO2014082336A1 Semiconductor device and manufacturing method thereof
06/05/2014WO2014082334A1 Method for manufacturing semiconductor device
06/05/2014WO2014082333A1 Manufacturing method of n-type mosfet
06/05/2014US20140154877 Methods for fabricating integrated circuits having low resistance metal gate structures
06/05/2014US20140154857 Memory Device And Method For Making Same
06/05/2014US20140154856 Inducing Channel Strain via Encapsulated Silicide Formation
06/05/2014US20140154855 Method and apparatus with channel stop doped devices
06/05/2014US20140154853 Method for manufacturing n-type mosfet
06/05/2014US20140154852 Method for forming semiconductor structure having metal connection
06/05/2014US20140154851 Non-volatile graphene nanomechanical switch
06/05/2014US20140154850 Analog floating-gate memory manufacturing process implementing n-channel and p-channel mos transistors
06/05/2014US20140154847 Spatial orientation of the carbon nanotubes in electrophoretic deposition process
06/05/2014US20140154846 Semiconductor device with raised source/drain and replacement metal gate
06/05/2014US20140154837 Method for manufacturing semiconductor device
06/05/2014US20140154510 Film structure and method for producing same
06/05/2014US20140153324 Magnetic Tunnel Junction Memory Device
06/05/2014US20140153312 Memory cells having ferroelectric materials
06/05/2014US20140152936 Semiconductor materials, transistors including the same, and electronic devices including transistors
06/05/2014US20140152377 Ferroelectric nanoshell devices
06/05/2014US20140152374 Semiconductor element, semiconductor device, and power converter
06/05/2014US20140152336 Semiconductor Device and Method for Evaluating Semiconductor Device
06/05/2014US20140151858 Increasing the doping efficiency during proton irradiation
06/05/2014US20140151857 Method and system for binding halide-based contaminants
06/05/2014US20140151854 Method for Separating a Layer and a Chip Formed on a Layer
06/05/2014US20140151852 Bipolar junction transistors with reduced base-collector junction capacitance
06/05/2014US20140151844 Integrated circuits separated by through-wafer trench isolation
06/05/2014US20140151843 Semiconductor device structures including metal oxide structures, and related methods of forming semiconductor device structures
06/05/2014US20140151841 Semiconductor devices having a positive-bevel termination or a negative-bevel termination and their manufacture
06/05/2014US20140151836 Optical semiconductor apparatus
06/05/2014US20140151830 Method and system for providing magnetic junctions having a graded magnetic free layer
06/05/2014US20140151825 Giant magneto-resistive sensor and manufacturing method thereof
06/05/2014US20140151824 Self-aligned wire for spintronic device
06/05/2014US20140151821 Mems structure with adaptable inter-substrate bond
06/05/2014US20140151819 Semiconductor Device Having SiGe Substrate, Interfacial Layer and High K Dielectric Layer
06/05/2014US20140151818 Semiconductor device with a silicon dioxide gate insulation layer implanted with a rare earth element and methods of making such a device
06/05/2014US20140151817 Self-aligned contacts
06/05/2014US20140151816 Novel contact structure for a semiconductor device and methods of making same
06/05/2014US20140151810 Semiconductor devices including protruding insulation portions between active fins
06/05/2014US20140151809 Apparatus for esd protection
06/05/2014US20140151806 Semiconductor Device Having SSOI Substrate
06/05/2014US20140151804 Semiconductor Device Including a Fin and a Drain Extension Region and Manufacturing Method
06/05/2014US20140151803 Inducing Channel Stress in Semiconductor-on-Insulator Devices by Base Substrate Oxidation
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