Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2014
06/19/2014US20140167175 Transistor and method of fabricating the same
06/19/2014US20140167174 Increasing ion/ioff ratio in finfets and nano-wires
06/19/2014US20140167173 Increasing the breakdown voltage of a metal oxide semiconductor device
06/19/2014US20140167171 Semiconductor device
06/19/2014US20140167166 Semiconductor device and fabrication method
06/19/2014US20140167165 Thin-film transistor and method for manufacturing thin-film transistor
06/19/2014US20140167164 Device structure with increased contact area and reduced gate capacitance
06/19/2014US20140167163 Multi-Fin FinFETs with Epitaxially-Grown Merged Source/Drains
06/19/2014US20140167162 Finfet with merge-free fins
06/19/2014US20140167161 Floating body cell
06/19/2014US20140167159 Semiconductor device and method of manufacturing the same
06/19/2014US20140167157 Source/drain extension control for advanced transistors
06/19/2014US20140167156 Advanced transistors with punch through suppression
06/19/2014US20140167155 Semiconductor component arrangement and method for producing thereof
06/19/2014US20140167153 Trench Fet Having Merged Gate Dielectric
06/19/2014US20140167152 Reduced Gate Charge Trench Field-Effect Transistor
06/19/2014US20140167151 Stepped trench mosfet and method of fabricating the same
06/19/2014US20140167150 Power semiconductor device and method of manufacturing the same
06/19/2014US20140167149 Semiconductor device and fabrication method thereof
06/19/2014US20140167148 Semiconductor device
06/19/2014US20140167147 Semiconductor device
06/19/2014US20140167146 Tunneling field effect transistor and fabrication method thereof
06/19/2014US20140167145 Semiconductor device
06/19/2014US20140167144 Vertical dmos transistor
06/19/2014US20140167143 Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device
06/19/2014US20140167142 Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells
06/19/2014US20140167141 Charge Trapping Split Gate Embedded Flash Memory and Associated Methods
06/19/2014US20140167140 Memory First Process Flow and Device
06/19/2014US20140167139 Integrated Circuits With Non-Volatile Memory and Methods for Manufacture
06/19/2014US20140167138 Hto offset for long leffective, better device performance
06/19/2014US20140167137 High Voltage Gate Formation
06/19/2014US20140167136 Charge Trapping Device with Improved Select Gate to Memory Gate Isoloation
06/19/2014US20140167135 Process Charging Protection for Split Gate Charge Trapping Flash
06/19/2014US20140167133 Nonvolatile semiconductor memory
06/19/2014US20140167131 Three dimensional memory
06/19/2014US20140167130 Eeprom core structure embedded into bcd process and forming method thereof
06/19/2014US20140167129 Semiconductor device and method of manufacturing the same
06/19/2014US20140167128 Memory Gate Landing Pad Made From Dummy Features
06/19/2014US20140167127 Memory Devices and Methods of Manufacture Thereof
06/19/2014US20140167126 Semiconductor device and method for manufacturing same
06/19/2014US20140167123 Power semiconductor device and method of manufacturing the same
06/19/2014US20140167121 Filament free silicide formation
06/19/2014US20140167120 Methods of forming a finfet semiconductor device by performing an epitaxial growth process
06/19/2014US20140167119 Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer
06/19/2014US20140167116 Heterojunction bipolar transistor
06/19/2014US20140167115 Heterojunction bipolar transistor, power amplifier including the same, and method for fabricating heterojunction bipolar transistor
06/19/2014US20140167114 Method for Growing III-V Epitaxial Layers
06/19/2014US20140167113 Gallium nitride based semiconductor devices and methods of manufacturing the same
06/19/2014US20140167111 Transistor and method of fabricating the same
06/19/2014US20140167110 Partial poly amorphization for channeling prevention
06/19/2014US20140167109 Continuous metal semiconductor alloy via for interconnects
06/19/2014US20140167108 Semiconductor devices with germanium-rich active layers & doped transition layers
06/19/2014US20140167104 Interface protection device with integrated supply clamp and method of forming the same
06/19/2014US20140167103 Semiconductor device and method of manufacturing the same
06/19/2014US20140167100 Cascode circuit device with improved reverse recovery characteristic
06/19/2014US20140167099 Integrated circuit including silicon controlled rectifier
06/19/2014US20140167086 Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
06/19/2014US20140167073 Silicon carbide semiconductor devices having nitrogen-doped interface
06/19/2014US20140167072 Schottky barrier diode and method of manufacturing the same
06/19/2014US20140167071 Semiconductor device and method for fabricating the same
06/19/2014US20140167070 Electronic chip and method of fabricating the same
06/19/2014US20140167068 Systems and methods for ohmic contacts in silicon carbide devices
06/19/2014US20140167064 GaN HEMTs AND GaN DIODES
06/19/2014US20140167062 Manufacturing method of semiconductor device
06/19/2014US20140167061 Semiconductor device
06/19/2014US20140167060 Normally off power electronic component
06/19/2014US20140167058 Compositionally graded nitride-based high electron mobility transistor
06/19/2014US20140167057 REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
06/19/2014US20140167050 Substrate for display device, display device including the substrate, and method of manufacturing the display device
06/19/2014US20140167049 Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate
06/19/2014US20140167048 Vertical thin film transistor and fabricating method thereof
06/19/2014US20140167047 Metal oxide tft with improved temperature stability
06/19/2014US20140167041 Semiconductor device
06/19/2014US20140167040 Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same
06/19/2014US20140167038 Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
06/19/2014US20140167036 Thin film transistor and fabrication method thereof, array substrate, and display device
06/19/2014US20140167033 Oxide sintered body and sputtering target
06/19/2014US20140167031 Method for fabricating array substrate, array substrate and display device
06/19/2014US20140167030 Vertical type semiconductor device and fabrication method thereof
06/19/2014US20140166984 Graphene Resonant Tunneling Transistor
06/19/2014US20140166983 Accurate control of distance between suspended semiconductor nanowires and substrate surface
06/19/2014US20140166982 Accurate control of distance between suspended semiconductor nanowires and substrate surface
06/19/2014US20140166981 Vertical nanowire transistor with axially engineered semiconductor and gate metallization
06/19/2014US20140166971 Variable resistance memory device and method of manufacturing the same
06/18/2014EP2743990A2 Complementary metal oxide semiconductor circuit structure, preparation method thereof and display device
06/18/2014EP2743989A1 Thin film transistor and fabrication method thereof, array substrate, and display device
06/18/2014EP2743984A2 Array substrate and the method for manufacturing the same, and liquid crystal display device
06/18/2014EP2743982A2 Display device, array substrate and manufacturing method thereof
06/18/2014EP2743977A1 Oxide tft array substrate, manufacturing method therefor, and electronic device
06/18/2014EP2742532A2 An apparatus and associated methods
06/18/2014DE112012000510B4 Verfahren zum Herstellen eines FET mit verspanntem Kanal mit Source/Drain-Puffern und FET A method for producing a strained channel FET with source / drain buffers and FET
06/18/2014DE102013225362A1 Erhöhen der durchbruchsspannung einer metalloxidhalbleitereinrichtung Increasing the breakdown voltage of a metalloxidhalbleitereinrichtung
06/18/2014DE102013224856A1 Schottky-Sperrschichtdiode und Verfahren zur Herstellung derselben Schottky barrier diode and method of manufacturing the same
06/18/2014DE102013224333A1 Halbleitervorrichtung Semiconductor device
06/18/2014DE102013113939A1 Halbleiterbauelement mit stufenförmigem Randabschluss und Verfahren zum Fertigen eines Halbleiterbauelements Semiconductor component with step-like edge termination and method of manufacturing a semiconductor device
06/18/2014DE102013113751A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
06/18/2014DE102013113540A1 Transistorzellenanordnung mit halbleiterdiode Transistor cell array with semiconductor diode
06/18/2014DE102013105765A1 FinFET mit eingebautem MOS-Varaktor und Verfahren zu seiner Herstellung FinFET with integrated MOS varactor and process for its preparation
06/18/2014DE10164494B4 Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung An encapsulated device with a small overall height and methods for preparing
06/18/2014CN203659881U Trench肖特基二极管 Trench Schottky Diode
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