Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
---|
08/27/1997 | CN1158003A Plasma processing apparatus for dry etching of semiconductor wafers |
08/27/1997 | CN1158002A Intermetal dielectric planarization ULSI circuits |
08/27/1997 | CN1158001A Semiconductor device wherein one of capacitor electrodes comprises conductor pole and tray-shaped conductor layer |
08/27/1997 | CN1158000A Label for semiconductor wafer |
08/27/1997 | CN1157934A Active matrix liquid crystal display |
08/27/1997 | CN1157897A Air current controlling device and clean room adopting the same |
08/27/1997 | CN1157860A Dry processing gas |
08/26/1997 | US5661837 Illumination optical apparatus and scanning exposure apparatus using the same |
08/26/1997 | US5661681 Semiconductor memory and method of writing, reading, and sustaining data thereof |
08/26/1997 | US5661678 Semiconductor memory device using dynamic type memory cells |
08/26/1997 | US5661676 Semiconductor memory and method of fabricating the same |
08/26/1997 | US5661601 Projection method and projection system and mask therefor |
08/26/1997 | US5661547 Exposure method and apparatus and device produced thereby in which a stop includes an opening which is variable to substantially compensate for a change in bandwidth of a laser beam |
08/26/1997 | US5661546 Projection exposure apparatus and method with changing imaging characteristics and illumination conditions |
08/26/1997 | US5661520 Energy resolved emission microscopy system and method |
08/26/1997 | US5661429 Bi-CMOS circuit |
08/26/1997 | US5661413 Processor utilizing a low voltage data circuit and a high voltage controller |
08/26/1997 | US5661408 Real-time in-line testing of semiconductor wafers |
08/26/1997 | US5661407 Integrated circuit probe testing device and method |
08/26/1997 | US5661388 Positioning method and positioning system |
08/26/1997 | US5661371 Color filter system for light emitting display panels |
08/26/1997 | US5661345 Semiconductor device having a single-crystal metal wiring |
08/26/1997 | US5661344 Porous dielectric material with a passivation layer for electronics applications |
08/26/1997 | US5661342 Semiconductor device with heat sink including positioning pins |
08/26/1997 | US5661341 Method of manufacturing a composite structure for use in electronic devices and structure, manufactured by said method |
08/26/1997 | US5661340 Dynamic random access memory having a stacked fin capacitor with reduced fin thickness |
08/26/1997 | US5661336 Tape application platform and processes therefor |
08/26/1997 | US5661335 Fluorine atoms doped silicon dioxide; it enhances oxygen recombination at select interface sites, so oxidation and time related thereto can be reduced or shortened which can improve wafer throughput |
08/26/1997 | US5661333 Substrate for integrated components comprising a thin film and an intermediate film |
08/26/1997 | US5661332 Semiconductor diffused resistor |
08/26/1997 | US5661331 Fuse bank |
08/26/1997 | US5661330 Fabrication, testing and repair of multichip semiconductor structures having connect assemblies with fuses |
08/26/1997 | US5661329 Semiconductor integrated circuit device including an improved separating groove arrangement |
08/26/1997 | US5661327 Transistor structure and method for fabricating the same |
08/26/1997 | US5661326 Mask ROM process with self-aligned ROM code implant |
08/26/1997 | US5661324 Relaxation oscillator using integrated RTC structure |
08/26/1997 | US5661323 Integrated circuit fuse programming and reading circuits |
08/26/1997 | US5661320 Semiconductor device and method of manufacturing the same |
08/26/1997 | US5661319 Semiconductor device having capacitor |
08/26/1997 | US5661318 Junction type field-effect transistor |
08/26/1997 | US5661316 Method for bonding compound semiconductor wafers to create an ohmic interface |
08/26/1997 | US5661314 Power transistor device having ultra deep increased concentration |
08/26/1997 | US5661311 Semiconductor device and process for fabricating the same |
08/26/1997 | US5661308 Method and apparatus for ion formation in an ion implanter |
08/26/1997 | US5661115 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
08/26/1997 | US5661093 Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
08/26/1997 | US5661091 Method of manufacturing a semiconductor device having PN junctions separated by depressions |
08/26/1997 | US5661090 Process and apparatus for manufacturing ceramic semiconductor packages |
08/26/1997 | US5661088 Disposing a malleable metallic layer overlying the first surface of substrate and hole, diposing an electroconductive layer in the hole, coupled to malleable layer, deforming the malleable layer, disposing an encapsulant into the hole |
08/26/1997 | US5661087 Vertical interconnect process for silicon segments |
08/26/1997 | US5661086 Process for manufacturing a plurality of strip lead frame semiconductor devices |
08/26/1997 | US5661085 Method for forming a low contact leakage and low contact resistance integrated circuit device electrode |
08/26/1997 | US5661084 Method for contact profile improvement |
08/26/1997 | US5661083 Method for via formation with reduced contact resistance |
08/26/1997 | US5661082 Process for forming a semiconductor device having a bond pad |
08/26/1997 | US5661081 Method of bonding an aluminum wire to an intergrated circuit bond pad |
08/26/1997 | US5661080 Method for fabricating tungsten plug |
08/26/1997 | US5661079 Semiinsulating polysilicon passivatated semiconductor zones |
08/26/1997 | US5661078 Method of manufacturing a semiconductor device having a wiring formed by silver bromide |
08/26/1997 | US5661073 Multilayer; forming oxidation resistant layer; then oxidable layer and protective coating; etching |
08/26/1997 | US5661072 Method for reducing oxide thinning during the formation of a semiconductor device |
08/26/1997 | US5661071 Heavily doped n-type silicon coated with a layer of oxide-nitride-oxide, top contact is made through a layer of tungsten silicide sandwiched between two layers of n-type polysilicon |
08/26/1997 | US5661068 Method of fabricating a semiconductor device |
08/26/1997 | US5661067 Method for forming twin well |
08/26/1997 | US5661066 Semiconductor integrated circuit |
08/26/1997 | US5661065 Method for fabricating semiconductor memory device having a capacitor |
08/26/1997 | US5661064 Method of forming a capacitor having container members |
08/26/1997 | US5661063 Semiconductor memory device provided with capacitors formed above and below a cell transistor and method for manufacturing the same |
08/26/1997 | US5661062 Ultra high density, non-volatile ferromagnetic random access memory |
08/26/1997 | US5661061 Process for fabricating a semiconductor integrated circuit device having the multi-layered fin structure |
08/26/1997 | US5661060 Method for forming field oxide regions |
08/26/1997 | US5661059 Boron penetration to suppress short channel effect in P-channel device |
08/26/1997 | US5661057 Method of making flash memory |
08/26/1997 | US5661056 Non-volatile semiconductor memory device and method of manufacturing the same |
08/26/1997 | US5661055 Method of making nonvolatile memory cell with vertical gate overlap and zero birds' beaks |
08/26/1997 | US5661054 Method of forming a non-volatile memory array |
08/26/1997 | US5661053 Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
08/26/1997 | US5661052 Forming gate oxide on zones separated by isolation regions; patterning; etching |
08/26/1997 | US5661051 Liquid phase deposition of silicon dioxide |
08/26/1997 | US5661050 Method of making a TFT with reduced channel length for LCDs |
08/26/1997 | US5661049 Stress relaxation in dielectric before metallization |
08/26/1997 | US5661048 Method of making an insulated gate semiconductor device |
08/26/1997 | US5661047 Method for forming bipolar ROM device |
08/26/1997 | US5661046 Method of fabricating BiCMOS device |
08/26/1997 | US5661045 Low energy inplants |
08/26/1997 | US5661044 Decreasing strains; oxygen and silicon dopes |
08/26/1997 | US5661043 Carbiding, nitriding and oxidizing silicon substrate surface, and annealing |
08/26/1997 | US5661042 Process for electrically connecting electrical devices using a conductive anisotropic material |
08/26/1997 | US5661041 Conductive paste, solar cells with grid electrode made of the conductive paste, and fabrication method for silicon solar cells |
08/26/1997 | US5660971 Thin film device and a method for fabricating the same |
08/26/1997 | US5660969 Chemical amplification resist and a fabrication process of a semiconductor device that uses such a chemical amplification resist |
08/26/1997 | US5660957 Electron-beam treatment procedure for patterned mask layers |
08/26/1997 | US5660895 Reacting with nitrous oxide or elemental oxygen |
08/26/1997 | US5660738 Direct etch processes for the manufacture of high density modules |
08/26/1997 | US5660708 Process for manufacturing a lead frame |
08/26/1997 | US5660706 Electric field initiated electroless metal deposition |
08/26/1997 | US5660696 Method for forming metal lines by sputtering |
08/26/1997 | US5660694 Vapor deposition on target material while controlling direct current potential |
08/26/1997 | US5660682 For integrated circuits |
08/26/1997 | US5660681 Resist pattern masking, dry etching exposed silicon based material using etching gas capable of generating oxygen and non-fluorine based chemical species; forming a silicon dioxide film |