Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/1998
06/09/1998US5763327 Plasma etching with a mixture gases including inert gas
06/09/1998US5763326 Gas plasma etching
06/09/1998US5763325 Fabrication process of a semiconductor device using a slurry containing manganese oxide
06/09/1998US5763324 Chemical vapor deposition of tungsten in the contact hole as a conductive layer, plasma dry etching to remove upper portion using silicon hexafluoride and oxygen
06/09/1998US5763323 Methods for fabricating integrated circuit devices including etching barrier layers and related structures
06/09/1998US5763322 Method of annealing film stacks and device having stack produced by same
06/09/1998US5763321 Method of manufacturing semiconductor device utilizing selective CVD method
06/09/1998US5763319 Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility
06/09/1998US5763318 Method of making a machine structures fabricated of mutiple microstructure layers
06/09/1998US5763317 Method for PBLOCOS isolation between semiconductor devices
06/09/1998US5763316 Filling a polysilicon or amorphous silicon in the grooves after removing the mask layer
06/09/1998US5763315 Shallow trench isolation with oxide-nitride/oxynitride liner
06/09/1998US5763314 Forming a trench in doped silicon substrate, filling it with dielectric material, planarizing the surface of substrate, masking and etching to expose active region on substrate, epitaxially growing doped silicon layers
06/09/1998US5763313 Process for fabricating shield for polysilicon load
06/09/1998US5763312 Method of fabricating LDD spacers in MOS devices with double spacers and device manufactured thereby
06/09/1998US5763311 High performance asymmetrical MOSFET structure and method of making the same
06/09/1998US5763310 Integrated circuit employing simultaneously formed isolation and transistor trenches
06/09/1998US5763309 Self-aligned isolation and planarization process for memory array
06/09/1998US5763308 Method for fabricating flash memory cells using a composite insulating film
06/09/1998US5763307 Flash memory device
06/09/1998US5763306 Method of fabricating capacitor over bit line COB structure for a very high density DRAM applications
06/09/1998US5763305 Method for forming a semiconductor memory device with a capacitor
06/09/1998US5763304 Method for manufacturing a capacitor with chemical mechanical polishing
06/09/1998US5763303 Forming field oxide, growing gate insulator, depositiong first polysilicon, metal silicide and first insulator layers, patterning, ion implanting, depositing second insulator, anisotropically etching to form spacer and doping
06/09/1998US5763302 Semiconductors
06/09/1998US5763301 Ion injection impurities into semiconductor layer on both sidewalls of electrode which have only one sidewall spacer on one side
06/09/1998US5763300 Forming silicon oxynitride film on conductive electrode on substrate, forming tantalum pentoxide film thereon
06/09/1998US5763299 Reduced leakage antifuse fabrication method
06/09/1998US5763298 Bond pad option for integrated circuits
06/09/1998US5763296 Method for fabricating an electronic device structure with studs locating lead frame on backing plate
06/09/1998US5763295 Device module comprising a substrate having grooves fixed to circuit chips with improved sealing characteristics
06/09/1998US5763294 Packaging a semiconductor device
06/09/1998US5763291 Preventing hydrogen passivation, forming a cap layer, etching and forming a stripe-shape ridge
06/09/1998US5763288 Method for producing semiconductor substrate by wafer bonding
06/09/1998US5763286 Process for manufacturing a DRAM capacitor having an annularly-grooved, cup-shaped storage-node plate which stores charge on inner and outer surfaces
06/09/1998US5763285 Removing a portion doped first polysilicon gate region, then applying a second polysilicon gate region, etching, doping to form two different concentration impurities region
06/09/1998US5763143 Depositing resist layer, masking, developing, baking, etching
06/09/1998US5763142 Method for forming resist pattern
06/09/1998US5763135 Light sensitive composition containing an arylhydrazo dye
06/09/1998US5763123 Method for producing thin-film substrate
06/09/1998US5763093 Aluminum nitride body having graded metallurgy
06/09/1998US5763021 Plasma enhanced chemical vapor deposition with sources of silicon, oxygen and fluorine
06/09/1998US5763018 Depositing water molecules and plasma dissociated products of water molecule on one side of the substrate, on which a dielectric layer of silicon dioxide is formed by chemical vapor deposition of silicon containing gases with and oxidant
06/09/1998US5763010 Stabilizing the doping process by heating, degassing the extra fluorine
06/09/1998US5763007 Transamination and nitriding
06/09/1998US5763006 Treating semiconductor wafers with hexamethyl-disilazane
06/09/1998US5763005 Method for forming multilayer insulating film of semiconductor device
06/09/1998US5762845 Method of making circuit with conductive and non-conductive raised features
06/09/1998US5762814 Plasma processing method and apparatus using plasma produced by microwaves
06/09/1998US5762813 Etching the substrate using mixed gas containing carbon and fluorine atoms, removing damage layer formed on the surface of the substrate by this etching is etched by second mixed gas including fluorine atom and oxygen, forming oxide film
06/09/1998US5762779 Method for producing electrolyzed water
06/09/1998US5762755 Etching silicon on semiconductor wafer
06/09/1998US5762751 Semiconductor processor with wafer face protection
06/09/1998US5762750 Magnetic neutral line discharged plasma type surface cleaning apparatus
06/09/1998US5762749 Apparatus for removing liquid from substrates
06/09/1998US5762748 Lid and door for a vacuum chamber and pretreatment therefor
06/09/1998US5762747 Interface apparatus for a stepper
06/09/1998US5762745 Substrate processing apparatus
06/09/1998US5762744 Cutting a wafer adhered to a metal paste preform layer on an expand tape; expanding the tape to separate; picking up each chip with adhered cut piece of preform layer and die-bonding to a lead frame
06/09/1998US5762714 Plasma guard for chamber equipped with electrostatic chuck
06/09/1998US5762711 Coating delicate circuits
06/09/1998US5762709 Substrate spin coating apparatus
06/09/1998US5762708 Rotary container; liquid crystals
06/09/1998US5762706 Method of forming compound semiconductor device
06/09/1998US5762705 Fabrication method of semiconductor laser by MOVPE
06/09/1998US5762704 Method of fabricating a silicon single-crystal ingot
06/09/1998US5762703 Method and apparatus for pulling monocrystals from a melt contained in a crucible
06/09/1998US5762697 Coating solution for silica-based coating film and method for the preparation thereof
06/09/1998US5762688 Filling recesses between ridges on wafer shaped substrate with tacky material, then running substrate through equipment to trap dirt particles without transferring tacky material, for semiconductor processing equipment
06/09/1998US5762544 Carrier head design for a chemical mechanical polishing apparatus
06/09/1998US5762491 Solid material delivery system for a furnace
06/09/1998US5762419 Method and apparatus for infrared pyrometer calibration in a thermal processing system
06/09/1998US5762391 Gripper for disk-shaped articles
06/09/1998US5762259 Method for forming bumps on a substrate
06/09/1998US5762084 Megasonic bath
06/09/1998US5762082 Precision fluid head transport
06/09/1998US5761811 Assembling method for cooling apparatus
06/09/1998US5761809 Reacting polymer with unsaturated ester salts, alkoxide salts, alkylcarboxylate salts to form curable polymer, curing
06/09/1998US5761802 Multi-layer electrical interconnection method
06/04/1998WO1998024129A1 Iii-v nitride semiconductor devices and process for the production thereof
06/04/1998WO1998024127A1 Electrically erasable and programmable read only memory (eeprom) having multiple overlapping metallization layers
06/04/1998WO1998024125A1 Controlled orientation of ferroelectric layers
06/04/1998WO1998024123A1 Method and apparatus for conveying thin sheet-like substrate
06/04/1998WO1998024122A1 Semiconductor device
06/04/1998WO1998024120A1 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures
06/04/1998WO1998024119A1 Process for manufacturing micromechanical functional elements
06/04/1998WO1998024118A1 Electronic device manufacture by energy beam crystallisation
06/04/1998WO1998024117A1 Method for producing a titanium monophosphide layer and its use
06/04/1998WO1998024116A1 STABILIZATION OF THE INTERFACE BETWEEN TiN AND A1 ALLOYS
06/04/1998WO1998024115A1 Aligner and method for exposure
06/04/1998WO1998024114A1 Substrate processing device
06/04/1998WO1998024039A1 Computer assisted method for partitioning an electric circuit
06/04/1998WO1998023997A1 Thin film transistor-liquid crystal display and method of fabricating the same
06/04/1998WO1998023995A1 Active matrix liquid crystal display
06/04/1998WO1998023788A1 Chemical vapor deposition apparatus
06/04/1998WO1998023408A1 A composition and slurry useful for metal cmp
06/04/1998WO1998018066A3 Method and system for assessing a measurement procedure and measurement-induced uncertainties on a batchwise manufacturing process of discrete products
06/04/1998DE4431605C2 Verfahren zur Herstellung eines Chipkartenmoduls für kontaktlose Chipkarten A process for producing a chip card module for contactless chip cards
06/04/1998DE19752769A1 Cleaning especially of semiconductor wafer using ozone
06/04/1998DE19747775A1 X=ray absorber for x=ray lithography mask