Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2002
08/01/2002US20020103556 Semiconductor device production management system, and semiconductor device production method
08/01/2002US20020103394 Organometallic copper complex and preparation of copper thin film by CVD
08/01/2002US20020103361 Mammalian chemokines; receptors; reagents; uses
08/01/2002US20020103318 Electronic component with an insulating layer formed from fluorinated norbornene polymer and method for manufacturing the insulating layers
08/01/2002US20020103087 Zirconium-doped BST materials and MOCVD process forming same
08/01/2002US20020102922 Pretreatment or aftertreatment with aqueous complexing organic acid buffer and increasing ph to remove excess portion of copper layer
08/01/2002US20020102865 Plant for producing semiconductor products
08/01/2002US20020102864 In situ wafer heat for reduced backside contamination
08/01/2002US20020102863 Sputtered insulating layer for wordline stacks
08/01/2002US20020102862 Method for fabricating a SiC film and a method for fabricating a SiC multi-layered film structure
08/01/2002US20020102861 Fabrication of high resistivity structures using focused ion beams
08/01/2002US20020102860 Process for fabricating films of uniform properties on semiconductor devices
08/01/2002US20020102859 Method for ultra thin film formation
08/01/2002US20020102858 Low contamination high density plasma etch chambers and methods for making the same
08/01/2002US20020102857 Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
08/01/2002US20020102856 Interface with dielectric layer and method of making
08/01/2002US20020102855 Pixellated devices such as active matrix liquid crystal displays and methods of manufacturing such
08/01/2002US20020102854 Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
08/01/2002US20020102852 Spinning in a single wafer cleaning tool, exposing the wafer to a solution of ammonium hydroxide, water, and a chelating agent
08/01/2002US20020102851 Etching method and etching apparatus
08/01/2002US20020102850 Method and apparatus for preparing polysilicon granules
08/01/2002US20020102849 Physical vapor deposition targets
08/01/2002US20020102848 Damascene nisi metal gate high-k transistor
08/01/2002US20020102847 MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications
08/01/2002US20020102846 Plating apparatus and method of manufacturing semiconductor device
08/01/2002US20020102845 Conformal surface silicide strap on spacer and method of making same
08/01/2002US20020102844 Methods of fabricating integrated circuitry, method of forming a local interconnect, and method of forming a conductive line
08/01/2002US20020102843 Semiconductor device and manufacturing method of the same
08/01/2002US20020102842 Low temperature integrated metallization process and apparatus
08/01/2002US20020102841 Method of forming low-resistance contact electrodes in semiconductor devices
08/01/2002US20020102840 Method for manufacturing cooper interconnects by using a cap layer
08/01/2002US20020102839 Method of making vertical diode structures
08/01/2002US20020102838 Microelectronic interconnect material with adhesion promotion layer and fabrication method
08/01/2002US20020102837 Method for filling recessed micro-structures with metallization in the production of a microelectronic device
08/01/2002US20020102836 Stacked local interconnect structure and method of fabricating same
08/01/2002US20020102835 Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
08/01/2002US20020102834 Method of forming dual damascene structure
08/01/2002US20020102832 Semiconductor device and method of manufacturing the same
08/01/2002US20020102830 Method of manufacturing nitride semiconductor substrate
08/01/2002US20020102829 Stereolithographically fabricated conductive elements, semiconductor device components and assemblies including such conductive elements, and methods
08/01/2002US20020102828 Method for manufacturing a semiconductor circuit system
08/01/2002US20020102827 Method for controlling multiple gate oxide growing by argon plasma doping
08/01/2002US20020102826 Chemical vapor deposition using an organoruthenium precursor, limiting introduction of the oxidation gas to when the precursor is supplying, and reacting at low oxygen partial pressure to form ruthenium film with low oxygen contamination
08/01/2002US20020102825 Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same
08/01/2002US20020102824 Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films
08/01/2002US20020102823 Thin film semiconductor device and method for producing thereof
08/01/2002US20020102822 Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films
08/01/2002US20020102821 Mask pattern design to improve quality uniformity in lateral laser crystallized poly-Si films
08/01/2002US20020102820 Method of treating semiconductor film and method of fabricating semiconductor device
08/01/2002US20020102819 Manufacturing method of compound semiconductor wafer
08/01/2002US20020102818 Deposition methods and apparatuses providing surface activation
08/01/2002US20020102817 Method for preventing polycide gate spiking
08/01/2002US20020102816 Semiconductor constructions
08/01/2002US20020102815 Method of manufacturing semiconductor integrated circuit device
08/01/2002US20020102814 Trench fill process for reducing stress in shallow trench isolation
08/01/2002US20020102813 Method for manufacturing semiconductor device on silicon-on-insulator substrate
08/01/2002US20020102811 Alignment mark fabrication process to limit accumulation of errors in level to level overlay
08/01/2002US20020102810 Method for fabricating a semiconductor device
08/01/2002US20020102809 Method of making a mim capacitor with self-passivating plates
08/01/2002US20020102808 Method for raising capacitance of a trench capacitor and reducing leakage current
08/01/2002US20020102807 Method for forming storage node electrode of semiconductor device
08/01/2002US20020102806 Method of producing a thin film resistor in an integrated circuit
08/01/2002US20020102805 Method for forming shallow junction
08/01/2002US20020102804 Semiconductor device and manufacturing method of the semiconductor device
08/01/2002US20020102803 Technique for gated lateral bipolar transistors
08/01/2002US20020102802 Novel technique to achieve thick silicide film for ultra-shallow junctions
08/01/2002US20020102801 Method for forming extension by using double etch spacer
08/01/2002US20020102800 Method for the manufacture of a semiconductor device with a field-effect transistor
08/01/2002US20020102799 Method for the integrated production of EEPROM and FLASH memory cells
08/01/2002US20020102798 Method for fabricating a self aligned s/d cmos device on insulated layer by forming a trench along the sti and fill with oxide
08/01/2002US20020102797 Composite gate dielectric layer
08/01/2002US20020102796 Method for forming dual gate electrode for semiconductor device
08/01/2002US20020102795 Field coupled power MOSFET bus architecture using trench technology
08/01/2002US20020102794 Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same
08/01/2002US20020102793 Method of fabricating a scalable stacked-gate flash memory device and its high-density memory arrays
08/01/2002US20020102792 Capacitor of a semiconductor device and fabricating method therefor
08/01/2002US20020102791 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same
08/01/2002US20020102790 Semiconductor memory device and method for manufacturing the same
08/01/2002US20020102789 Semiconductor device and method in which contact hole is filled with silicon having low impurity concentration
08/01/2002US20020102788 Method of making vertical diode structures
08/01/2002US20020102787 Passivation for improved bipolar yield
08/01/2002US20020102786 Trench MOSFET formed using selective epitaxial growth
08/01/2002US20020102785 Method for forming shallow junctions by increasing width of photoresist and using implanting through poly film
08/01/2002US20020102784 Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers
08/01/2002US20020102783 Semiconductor device and method of manufacturing the same
08/01/2002US20020102782 Semiconductor device with two types of FET's having different gate lengths and its manufacture method
08/01/2002US20020102781 Method for fabricating polysilicon thin film transistor
08/01/2002US20020102780 Semiconductor device and manufacturing method thereof
08/01/2002US20020102779 Method of forming metal/dielectric multi-layered interconnects
08/01/2002US20020102778 Dynamic random access memory (DRAM) cell with a folded bitline vertical transistor and method of producing the same
08/01/2002US20020102777 Thin-film semiconductor device and method of manufacturing the same
08/01/2002US20020102776 Semiconductor device and method of manufacturing the same
08/01/2002US20020102775 Method of surface treatment on the improvement of electrical properties for doped silicon oxides (SiO2) films
08/01/2002US20020102774 Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates
08/01/2002US20020102771 Semiconductor device and a method of manufacturing the same
08/01/2002US20020102770 BGA semiconductor package improving solder joint reliability and fabrication method thereof
08/01/2002US20020102769 Semiconductor device and fabrication method thereof
08/01/2002US20020102768 Thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film is increased; large capacitance without lowering voltage resistance
08/01/2002US20020102767 Ball grid array (BGA) to column grid array (CGA) conversion process
08/01/2002US20020102766 Solar cell and method of manufacturing same
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