Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2002
10/10/2002US20020145441 Semiconductor integrated circuit and test board
10/10/2002US20020145440 Semiconductor device
10/10/2002US20020145396 Real time measurement of leakage current in high voltage electron guns
10/10/2002US20020145362 Surface acoustic wave device, method for making the same, and communication apparatus including the same
10/10/2002US20020145208 Transfer mold semiconductor packaging processes, circuit substrates, semiconductor packages, and ball grid arrays
10/10/2002US20020145207 Method and structure for integrated circuit package
10/10/2002US20020145206 Bonding pad structures for semiconductor devices and fabrication methods thereof
10/10/2002US20020145204 Semiconductor device
10/10/2002US20020145203 Method and structure for economical high density chip carrier
10/10/2002US20020145202 Semiconductor device fabricated on multiple substrates and method for fabricating the same
10/10/2002US20020145201 Method and apparatus for making air gap insulation for semiconductor devices
10/10/2002US20020145200 Spin-on cap layer, and semiconductor device containing same
10/10/2002US20020145199 Semiconductor device and method for fabricating the same
10/10/2002US20020145198 Semiconductor device and its manufacturing method
10/10/2002US20020145197 Wiring substrate
10/10/2002US20020145193 Method to reduce number of wire-bond loop heights versus the total quanity of power signal rings
10/10/2002US20020145191 Semiconductor element, connection structure thereof, semiconductor device using a plurality of such elements and processes for making the same
10/10/2002US20020145186 Method of forming HSQFN type package
10/10/2002US20020145182 Microelectronic packages having an array of resilient leads and methods therefor
10/10/2002US20020145181 Method for integrated circuit packaging
10/10/2002US20020145179 Dual layer etch stop barrier
10/10/2002US20020145178 Matrix form semiconductor package substrate having an electrode of serpentine shape and method for forming
10/10/2002US20020145177 Semiconductor device
10/10/2002US20020145176 Semiconductor device
10/10/2002US20020145175 Inductance element and semiconductor device
10/10/2002US20020145173 Low voltage transistors with increased breakdown voltage to substrate
10/10/2002US20020145172 High withstand voltage semiconductor device
10/10/2002US20020145170 Power MOS transistor
10/10/2002US20020145168 Method for forming dielectric stack without interfacial layer
10/10/2002US20020145167 A bicmos device having a cmos gate electrode and a bipolar emitter each containing two imurities of the same conductivity type
10/10/2002US20020145166 MOS transistor with ramped gate oxide thickness and method for making same
10/10/2002US20020145165 Semiconductor device having electrostatic discharge protector and fabricating method thereof
10/10/2002US20020145162 Non-volatile semiconductor storage device and method for producing the same
10/10/2002US20020145161 Multi-level type nonvolatile semiconductor memory device
10/10/2002US20020145159 Semiconductor device
10/10/2002US20020145157 Mosfet with a thin gate insulating film
10/10/2002US20020145156 Semiconductor device and method for manufacturing the same
10/10/2002US20020145155 Non-volatile semiconductor memory devices and methods for manufacturing the same
10/10/2002US20020145154 Asymmetrical devices for short gate length performance with disposable sidewall
10/10/2002US20020145153 Thin-film crystal wafer having pn junction and method for fabricating the wafer
10/10/2002US20020145148 Semiconductor light emitting device and fabrication method thereof
10/10/2002US20020145145 Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor
10/10/2002US20020145143 Active matrix display device
10/10/2002US20020145142 Polysilicon thin film transistor with a self-aligned LDD structure
10/10/2002US20020145141 Gate-overlapped lightly doped drain polysilicon thin film transistor
10/10/2002US20020145140 Substrate device manufacturing method and substrate device, electrooptical device manufacturing method and electrooptical device and electronic unit
10/10/2002US20020145138 Semiconductor integrated circuit device
10/10/2002US20020145137 Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improve gain
10/10/2002US20020145127 Chemical mechanical polishing slurry useful for copper substrates
10/10/2002US20020145116 X-ray detector and method of fabricating therefore
10/10/2002US20020145030 Continuous mode solder jet apparatus
10/10/2002US20020144980 Plasma processing system
10/10/2002US20020144975 Board level decapsulator
10/10/2002US20020144974 Method of anisotropic etching of silicon
10/10/2002US20020144973 Selective treatment of the surface of a microelectronic workpiece
10/10/2002US20020144972 Immersing a surface layer of said substrate in a solution that is able to remove the surface layer, and forming bubbles in solution on the surface of the layer, removing the solution; semiconductors
10/10/2002US20020144927 IC wafer cushioned separators
10/10/2002US20020144908 Back-end metallisation process
10/10/2002US20020144901 Coils for generating a plasma and for sputtering
10/10/2002US20020144900 Anodizing foil in first electrolyte solution, passing foil through oven, anodizing foil in second anodizing solution wherein first and second electrolyte solutions each comprise glycerine, ammonium phosphate, and de-ionized water
10/10/2002US20020144894 Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece
10/10/2002US20020144891 Method and apparatus for sputter coating with variable target to substrate spacing
10/10/2002US20020144881 Magnetic carrying device
10/10/2002US20020144787 Supporting structure for a ceramic susceptor
10/10/2002US20020144785 Method and apparatus for micro-jet enabled, low-energy ion generation and transport in plasma processing
10/10/2002US20020144784 Wafer processing apparatus having a chamber with an upper wall having gas supply openings formed therein which promote more even processing of a wafer
10/10/2002US20020144782 Robot arm mechanism
10/10/2002US20020144781 Local etching method
10/10/2002US20020144726 Method of forming transparent, conductive film, method of compensating defective region of semiconductor layer, photovoltaic element, and method of producing photovoltaic element
10/10/2002US20020144725 Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure
10/10/2002US20020144720 Method and apparatus for selective removal of material from wafer alignment marks
10/10/2002US20020144719 Solution treatment unit
10/10/2002US20020144713 Method and system for chemical injection in silicon wafer processing
10/10/2002US20020144710 Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring
10/10/2002US20020144709 Nextgen wet process tank
10/10/2002US20020144708 Megazone system
10/10/2002US20020144654 Installation for processing wafers
10/10/2002US20020144645 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/10/2002US20020144643 Method for forming a single crystalline film
10/10/2002US20020144542 Method and system for liquefaction monitoring
10/10/2002US20020144396 Method of making an integrated circuit package
10/10/2002US20020144387 Apparatus for attaching sand papers on dummy wafers
10/10/2002DE10214157A1 Bipolar transistor for current supply switch has collector provided by semiconductor substrate and 2 successive layers of similar conductivity type with different doping levels
10/10/2002DE10212661A1 Halbleitervorrichtung Semiconductor device
10/10/2002DE10211894A1 Systeme und Verfahren zum Ermöglichen eines Testens von Anschlußstellenempfängern integrierter Schaltungen Systems and methods for enabling testing of ports receivers of integrated circuits
10/10/2002DE10154771A1 Silicon composition low dielectric film, semiconductor device and method for producing low dielectric films
10/10/2002DE10132504C1 Method for simultaneously polishing both sides of semiconductor wafer mounted on cogwheel between central cogwheel and annulus uses upper and lower polishing wheel
10/10/2002DE10130824A1 Dielectric layer recovery method for integrated circuit manufacture, involves planarizing spin on glass layer by etching to form new dielectric layer
10/10/2002DE10126575C1 Process for etching phase shift layers in half-tone phase masks used in the production of microchips comprises depositing a phase shift layer on a substrate, applying a mask, and plasma
10/10/2002DE10117717A1 Verfahren zur Herstellung einer Halbleiterschaltung und nach diesem Verfahren hergestellten Halbleiterschaltungen A process for producing a semiconductor circuit and semiconductor circuits manufactured according to this method
10/10/2002DE10117558A1 Herstellung eines lateralen Bipolartransistors Producing a lateral bipolar transistor
10/10/2002DE10117481A1 Catadioptric projection objective for microlithography system, has beam splitter arranged near object plane or plane conjugated to object plane
10/10/2002DE10117172A1 Detection of optically transparent substrate wafer involves providing surface of transparent wafer with coating of opaque material such as metal or silicon monitoring light flow to sensor
10/10/2002DE10117025A1 Teilchenoptische Vorrichtung,Beleuchtungsvorrichtung und Projektionssystem sowie Verfahren unter Verwendung derselben A particle-optical device, illumination device and projection system and method using the same
10/10/2002DE10115492A1 Reaction chamber reconditioning method for CVD reactor, etching reactor, involves introducing mixture of hydrogen and nitrogen gas into chamber that reacts with photoresist layer on dummy wafer
10/10/2002DE10115491A1 Testing tool of de-capsulated chip - is able to avoid damaging the chips and effectively analyze the chips
10/10/2002DE10115393A1 Production of integrated circuit comprises implanting low energetic implantation and high energetic implantation in surface region having first and a second surface region
10/10/2002DE10114231A1 Supporting element production used for integrating into integrated circuit component comprises providing photoresist coating on support foil facing away from copper layer
10/10/2002DE10105914C1 Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung Organic field effect transistor having photostructured gate dielectric and a process for its production
10/10/2002CA2442985A1 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
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