Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2004
04/22/2004WO2004034430A2 Apparatus for alignment and orientation of a wafer for processing
04/22/2004WO2004034426A2 Non-volatile memory device and method for forming
04/22/2004WO2004034423A2 Semiconductor photodetector with internal reflector
04/22/2004WO2004034422A2 Wafer coating and singulation method
04/22/2004WO2004034421A2 Method for electric field assisted deposition of films of nanoparticles
04/22/2004WO2004034148A1 Composition for forming antireflection film for lithography
04/22/2004WO2004034138A1 Method for eliminating punctual defects comprised in an electrochemical device
04/22/2004WO2004033769A1 Fabrication method for crystalline semiconductor films on foreign substrates
04/22/2004WO2004033768A1 Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effectsof the screw dislocations
04/22/2004WO2004033764A1 Liquid treatment apparatus and method of liquid treatment
04/22/2004WO2004033763A1 Cup type plating equipment
04/22/2004WO2004033758A2 Compositions of transition metal species in dense phase carbon dioxide and methods of use thereof
04/22/2004WO2004033752A2 Two-layer film for next generation damascene barrier application with good oxidation resistance
04/22/2004WO2004033574A1 Cmp method utilizing amphiphilic non-ionic surfactants
04/22/2004WO2004033370A1 Nanopellets and method of making nanopellets
04/22/2004WO2004033366A1 Method for preparing nano-particle and nano-particle prepared by said preparation method
04/22/2004WO2004033197A2 Support for substrates and compound comprising a support substrate and an extremely thin substrate
04/22/2004WO2004033158A2 Substrate handling system for aligning and orienting substrates during a transfer operation
04/22/2004WO2004033151A1 Retaining ring for holding semiconductor wafers in a chemical-mechanical polishing device
04/22/2004WO2004033103A2 High temperature, high strength, colorable materials for device processing systems
04/22/2004WO2004032831A2 Metalization of microtubules
04/22/2004WO2004032593A2 Extremely thin substrate support
04/22/2004WO2004019375A3 Bonded structures for use in semiconductor processing environments
04/22/2004WO2004013861A3 Magnetic element utilizing spin transfer and an mram device using the magnetic element
04/22/2004WO2004012241A3 Radiation hardened visible p-i-n detector
04/22/2004WO2004011691B1 Copper sputtering targets and methods of forming copper sputtering targets
04/22/2004WO2004009289A3 Rising after chemical-mechanical planarization process applied on a wafer
04/22/2004WO2004006300A3 Organic contact-enhancing layer for organic field effect transistors
04/22/2004WO2003107425A3 Semiconductor memory device having a ferroelectric capacitor and a manufacturing method thereof
04/22/2004WO2003107350A3 Magnetoresistive random access memory with reduced switching field
04/22/2004WO2003100834A3 Method of forming semiconductor device with sidewall access gate
04/22/2004WO2003100828A3 Method of depositing an oxide film by chemical vapor deposition
04/22/2004WO2003085703A3 Electronic component having at least one semiconductor chip and flip-chip contacts, and method for the production thereof
04/22/2004WO2003078301A3 Micro-electromechanical systems
04/22/2004WO2003071596A3 Electronic component with an adhesive layer and method for the production thereof
04/22/2004WO2003068421A3 Integrated system for processing semiconductor wafers
04/22/2004WO2003060986A3 Method of forming a removable support with a sacrificial layers and of transferring devices
04/22/2004WO2003060963A3 Electrochemical edge and bevel cleaning process and system
04/22/2004WO2003054622A8 Thin film transistor substrate for liquid crystal display (lcd) and method of manufacturing the same
04/22/2004WO2003046948A3 Bipolar semiconductor device and method for production thereof
04/22/2004WO2003030223A3 Substrate processing apparatus and method
04/22/2004WO2003029531A3 Electrolytic processing apparatus and method
04/22/2004WO2003010070A8 A container
04/22/2004WO2002095430A3 Test circuit
04/22/2004WO2002080244A9 Improved process for deposition of semiconductor films
04/22/2004WO2002062680A8 Conveyorized storage and transportation system
04/22/2004WO2002059398A3 Plating apparatus and method
04/22/2004WO2002031869A9 Method and apparatus for processing thin metal layers
04/22/2004US20040078774 Semiconductor integrated circuit
04/22/2004US20040078739 Semiconductor device
04/22/2004US20040078676 Automatic computer-system-level integrated circuit testing system and method
04/22/2004US20040078184 Logic emulator
04/22/2004US20040078108 Using scatterometry to obtain measurements of in circuit structures
04/22/2004US20040077512 Removing etching waste from copper wiring and silicon oxide surface without corrosion, oxidation or roughness; using such as tetramethylammonium hydroxide and 1,4-diisobutyl-1,4-dimethylbut-2-yne diol polyoxyethylene glycol ether
04/22/2004US20040077305 Process for forming fast recovery diode with a single large area P/N junction
04/22/2004US20040077297 Polishing apparatus and polishing method
04/22/2004US20040077295 Process for reducing dishing and erosion during chemical mechanical planarization
04/22/2004US20040077292 Real-time polishing pad stiffness control using magnetically controllable fluid
04/22/2004US20040077185 Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
04/22/2004US20040077184 Apparatuses and methods for depositing an oxide film
04/22/2004US20040077183 Titanium tantalum nitride silicide layer
04/22/2004US20040077182 Method for forming introgen-containing oxide thin film using plasma enhanced atomic layer deposition
04/22/2004US20040077181 Use of phoslon (PNO) for borderless contact fabrication, etch stop/barrier layer for dual damascene fabrication and method of forming phoslon
04/22/2004US20040077180 Process and control device for the planarization of a semiconductor sample
04/22/2004US20040077179 Laminate low K film
04/22/2004US20040077178 Method for laterally etching a semiconductor structure
04/22/2004US20040077177 Dielectric materials
04/22/2004US20040077176 Process for forming shallow trench isolation region with corner protection layer
04/22/2004US20040077175 Barc shaping for improved fabrication of dual damascene integrated circuit features
04/22/2004US20040077174 Method for forming a high aspect ratio via
04/22/2004US20040077173 Using water soluble bottom anti-reflective coating
04/22/2004US20040077172 Wet etching narrow trenches
04/22/2004US20040077171 Method and composition to improve a nitride/oxide wet etching selectivity
04/22/2004US20040077170 Method for burying resist and method for manufacturing semiconductor device
04/22/2004US20040077169 Method of fabricating a narrow polysilicon line
04/22/2004US20040077168 Etchant and method for fabricating a semiconductor device using the same
04/22/2004US20040077166 Semiconductor crystal growing method and semiconductor light-emitting device
04/22/2004US20040077165 Hafnium nitride buffer layers for growth of GaN on silicon
04/22/2004US20040077164 Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
04/22/2004US20040077163 Method for STI etching using endpoint detection
04/22/2004US20040077162 Thermal activation of fluorine for use in a semiconductor chamber
04/22/2004US20040077161 Method of depositing a material layer
04/22/2004US20040077160 Method to control dimensions of features on a substrate with an organic anti-reflective coating
04/22/2004US20040077159 Apparaus for manufacturing semiconductor devices
04/22/2004US20040077158 Method of manufacturing semiconductor device through salicide process
04/22/2004US20040077157 Fabrication of abrupt ultra-shallow junctions
04/22/2004US20040077156 Methods of defect reduction in wide bandgap thin films using nanolithography
04/22/2004US20040077155 Method for fabricating laminated silicon gate electrode
04/22/2004US20040077153 Semiconductor substrate, SOI substrate and manufacturing method therefor
04/22/2004US20040077152 Process for producing semiconductor device and semiconductor device produced thereby
04/22/2004US20040077151 Field-shielded SOI-MOS structure free from floating body effect, and method of fabrication therefor
04/22/2004US20040077149 Method and system for compensating for anneal non-uniformities
04/22/2004US20040077148 Methods of manufacturing transistors and transistors having an anti-punchthrough region
04/22/2004US20040077147 Stacked gate flash memory device and method of fabricating the same
04/22/2004US20040077146 Method for producing nonvolatile semiconductor memory device and the device itself
04/22/2004US20040077145 Method of fabricating semiconductor device
04/22/2004US20040077144 Method to form self-aligned split gate flash with L-shaped wordline spacers
04/22/2004US20040077143 Semiconductor device and method for fabricating the same using damascene process
04/22/2004US20040077142 Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer
04/22/2004US20040077141 Capacitor and fabrication method thereof