Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2004
11/04/2004WO2004095579A1 Method of producing semiconductor integrated circuit device on soi substrate
11/04/2004WO2004095578A1 Semiconductor device and production method therefor
11/04/2004WO2004095576A1 Semiconductor device
11/04/2004WO2004095573A1 Wafer scale package and method of assembly
11/04/2004WO2004095572A1 A method of fabricating a cmos device with dual metal gate electrodes
11/04/2004WO2004095571A1 Substrate processing method and substrate processing apparatus
11/04/2004WO2004095569A1 Method of filling high aspect ratio, small dimension gaps and formulations useful therein
11/04/2004WO2004095568A1 Device for applying semiconductor treatment to treatment subject substrate
11/04/2004WO2004095567A1 Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material
11/04/2004WO2004095566A1 Semiconductor manufacturing system
11/04/2004WO2004095565A1 Semiconductor device comprising extensions produced from material with a low melting point
11/04/2004WO2004095564A1 Method of manufacturing a semiconductor device with a bipolar transistor
11/04/2004WO2004095563A1 Surface modification method and surface modification apparatus for interlayer insulating film
11/04/2004WO2004095562A1 Semiconductor device and process for producing the same
11/04/2004WO2004095561A1 Compensation for heterogeneous nitrogen concentration in a nitrided silicon oxide layer
11/04/2004WO2004095560A1 Semiconductor producing device and semiconductor producing method
11/04/2004WO2004095559A1 Method for removing silicon oxide film and processing apparatus
11/04/2004WO2004095558A1 Cmp polishing method and method for manufacturing semiconductor device
11/04/2004WO2004095557A1 Semiconductor device
11/04/2004WO2004095556A1 A method of forming a metal gate structure with tuning of work function by silicon incorporation
11/04/2004WO2004095555A1 Method for cleaning heat treatment apparatus
11/04/2004WO2004095554A2 Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion
11/04/2004WO2004095553A2 Method for producing a strained layer on a substrate and corresponding layer structure
11/04/2004WO2004095552A2 Method for producing a tensioned layer on a substrate, and a layer structure
11/04/2004WO2004095551A1 Method and apparatus for multilayer photoresist dry development
11/04/2004WO2004095550A1 Organic matter removing apparatus, organic matter removing method, ozone water jet nozzle, and organic matter removing apparatus for mask substrate
11/04/2004WO2004095548A1 Stage device and exposure device
11/04/2004WO2004095547A1 Semiconductor device manufacturing method and semiconductor device manufacturing system
11/04/2004WO2004095546A1 Method of adjusting the absorptivity of integrated circuits prior to rapid thermal processing
11/04/2004WO2004095545A2 Wafer carrier having improved processing characteristics
11/04/2004WO2004095543A2 Laser trimming with phase shifters
11/04/2004WO2004095542A2 Apparatus and method for picking up semiconductor chip
11/04/2004WO2004095540A2 Method of making a nanogap for variable capacitive elements and device having a nanogap
11/04/2004WO2004095534A2 Gaas substrate with sb buffering for high in devices
11/04/2004WO2004095531A2 Method and system for temperature control of a substrate
11/04/2004WO2004095530A2 Adjoining adjacent coatings on an element
11/04/2004WO2004095527A2 Method for fabricating dual-metal gate device
11/04/2004WO2004095526A2 Multi-bit non-volatile memory device and method therefor
11/04/2004WO2004095525A2 Gate electrode for mos transistors
11/04/2004WO2004095524A2 Semiconductor alignment aid
11/04/2004WO2004095522A2 Deep n wells in triple well structures and method for fabricating same
11/04/2004WO2004095517A2 Passivation layer for group iii-v semiconductor devices
11/04/2004WO2004095515A2 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices
11/04/2004WO2004095514A2 Circuit device with at least partial packaging and method for forming
11/04/2004WO2004095513A2 A method for plasma deposition of a substrate barrier layer
11/04/2004WO2004095510A2 Multilayered cap barrier in microelectronic, interconnect structures
11/04/2004WO2004095477A2 High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
11/04/2004WO2004095459A2 Magnetoresistive ram device and methods for fabricating
11/04/2004WO2004095112A2 Cmos-compatible integration of silicon-based optical devices with electronic devices
11/04/2004WO2004094995A2 Hierarchical evaluation of cells
11/04/2004WO2004094884A1 Slit valve method and apparatus
11/04/2004WO2004094764A2 Low cost capacitors manufactured from conductive loaded resin-based materials
11/04/2004WO2004094702A2 Multi-chemistry plating system
11/04/2004WO2004094701A2 Method and apparatus for monitoring, dosing, and distribution of chemical compositions
11/04/2004WO2004094696A1 Microelectronic device manufacturing in coordinated carbon dioxide processing chambers
11/04/2004WO2004094691A1 Method for hafnium nitride deposition
11/04/2004WO2004094690A1 Carbon nanotube growth method
11/04/2004WO2004094581A1 Aqueous fluoride compositions for cleaning semiconductor devices
11/04/2004WO2004094548A2 Adhesive of a silicon and silica composite particularly useful for joining silicon parts
11/04/2004WO2004094547A2 Coated metal oxide particles for cmp
11/04/2004WO2004094311A1 Coating liquid for forming porous silica
11/04/2004WO2004094105A1 Vacuum suction holding apparatus and method, grinding apparatus using the holding apparatus, and device producing method using the grinding apparatus
11/04/2004WO2004094101A1 Growth model automated material handling system
11/04/2004WO2004094095A1 Bonding device and bonding tool
11/04/2004WO2004094040A1 Chemical filter
11/04/2004WO2004086490B1 Surgical holder for a blood vessel
11/04/2004WO2004085491A3 Removal of cmp and post-cmp residue from semiconductors using supercritical carbon dioxide process
11/04/2004WO2004084299A3 Shallow trench isolation in processes with strained silicon
11/04/2004WO2004084271A3 Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
11/04/2004WO2004082821A3 Processing system and method for thermally treating a substrate
11/04/2004WO2004082820A3 Processing system and method for chemically treating a substrate
11/04/2004WO2004082005B1 Semiconductor mos, cmos devices and capacitors and method of manufacturing the same
11/04/2004WO2004081986A3 Method to planarize and reduce defect density of silicon germanium
11/04/2004WO2004079786A3 Apparatus and method for reducing impurities in a semiconductor material
11/04/2004WO2004078410A3 Agent for increasing selection ratio of polishing rates
11/04/2004WO2004077498A3 Method of manufacturing a non-volatile memory cell with a lateral select gate
11/04/2004WO2004077438A3 Process of forming a ferroelectric memory integrated circuit
11/04/2004WO2004075265A3 Methods for selectively bumping integrated circuit substrates and related structures
11/04/2004WO2004075255A3 End point detection in time division multiplexed etch processes
11/04/2004WO2004073049A3 Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
11/04/2004WO2004072978A3 High density and high programming efficiency mram design
11/04/2004WO2004070841A3 Storage cell and method for the production thereof
11/04/2004WO2004070796A9 Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
11/04/2004WO2004064125A8 Gas feed line structure
11/04/2004WO2004059700A3 Photoresist removal
11/04/2004WO2004057662A3 Electronic device and method of manufacturing same
11/04/2004WO2004053944A3 Fast localization of electrical failures on an integrated circuit system and method
11/04/2004WO2004049412A3 Producing method for crystalline thin film
11/04/2004WO2004040619A3 Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer
11/04/2004WO2004040034A3 Method of preparing a solution and application of this solution to prepare functional oxide layers
11/04/2004WO2004027684A3 Photolithography mask repair
11/04/2004WO2004015764A3 Vertical system integration
11/04/2004WO2004011695A3 Sublimation system employing carrier gas
11/04/2004WO2004004085A3 Nitride semiconductor laser device and a method for improving its performance
11/04/2004WO2003098350A3 Method for the targeted deformation of an optical element
11/04/2004WO2003096121A3 Photolithography mask comprising absorber/phase-shifter elements
11/04/2004WO2003085724A8 Tri-layer masking architecture for patterning dual damascene interconnects
11/04/2004WO2003019626A9 Method of forming a pattern on a semiconductor wafer using an attenuated phase shifting reflective mask
11/04/2004US20040221211 Individually adjustable back-bias technique
11/04/2004US20040220968 Method of providing context specific recipes in a semiconductor facility by defining product categories