H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2004
10/28/2004	US20040215030 Precursors for metal containing films
10/28/2004	US20040215029 Novel organometallic iridium compound, process of producing the same, and process of producing thin film
10/28/2004	US20040214512 CMP composition and process
10/28/2004	US20040214508 Apparatus and method for controlling film thickness in a chemical mechanical planarization system
10/28/2004	US20040214453 Method of manufacturing silicon carbide semiconductor device
10/28/2004	US20040214451 Method of fabricating oxides with low defect densities
10/28/2004	US20040214448 Method of ashing a photoresist
10/28/2004	US20040214446 Nitrogen-free dielectric anti-reflective coating and hardmask
10/28/2004	US20040214445 Dry etching method
10/28/2004	US20040214444 Chemical mechanical polishing slurry and process for ruthenium films
10/28/2004	US20040214443 Silane containing polishing composition for CMP
10/28/2004	US20040214442 Method to reduce dishing and erosion in a CMP process
10/28/2004	US20040214441 Method for copper surface smoothing
10/28/2004	US20040214440 Methods of forming patterns for semiconductor constructions; and molds configured to pattern masses associated with semiconductor constructions
10/28/2004	US20040214439 Semiconductor device and manufacturing method thereof
10/28/2004	US20040214438 Semiconductor processing methods
10/28/2004	US20040214437 Atomic layer deposition
10/28/2004	US20040214436 Method of fabricating a semiconductor work object
10/28/2004	US20040214435 Semiconductor fabricating apparatus
10/28/2004	US20040214434 Wafer bonded virtual substrate and method for forming the same
10/28/2004	US20040214433 Flash memory and fabrication method thereof
10/28/2004	US20040214432 Thinning of semiconductor wafers
10/28/2004	US20040214431 Electropolishing endpoint detection method
10/28/2004	US20040214430 Nitrogen-enriched low-k barrier layer for a copper metallization layer
10/28/2004	US20040214429 Electron device having electrode made of metal that is familiar with carbon
10/28/2004	US20040214428 Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductor substrate
10/28/2004	US20040214427 Forming thin hard mask over air gap or porous dielectric
10/28/2004	US20040214426 Method of manufacturing electronic device and energy beam absorbing material
10/28/2004	US20040214425 Atomic layer deposited tantalum nitride layer to improve adhesion between a copper structure and overlying materials
10/28/2004	US20040214424 Localized slots for stress relieve in copper
10/28/2004	US20040214423 Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process
10/28/2004	US20040214421 Method for forming contact hole of semiconductor device
10/28/2004	US20040214420 Method and apparatus for transferring solder bumps
10/28/2004	US20040214416 Method of forming a metal gate structure with tuning of work function by silicon incorporation
10/28/2004	US20040214415 Process for manufacturing a memory device, in particular a phase change memory, including a silicidation step
10/28/2004	US20040214414 Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus
10/28/2004	US20040214413 Semiconductor device manufacturing method and film forming method
10/28/2004	US20040214412 Method of growing a semiconductor layer
10/28/2004	US20040214411 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
10/28/2004	US20040214409 Method and apparatus for manufacturing known good semiconductor die
10/28/2004	US20040214408 Method for forming scribe line on semiconductor wafer, and scribe line forming device
10/28/2004	US20040214407 Semiconductor structures with structural homogeneity
10/28/2004	US20040214406 Bonding method and bonding apparatus
10/28/2004	US20040214405 Method for fabricating isolation layer in semiconductor device
10/28/2004	US20040214404 Manufacturing method of semiconductor device and oxidization method of semiconductor substrate
10/28/2004	US20040214403 Device isolation for semiconductor devices
10/28/2004	US20040214402 Method for fabricating capacitor of semiconductor device
10/28/2004	US20040214401 Passivation layer for group III-V semiconductor devices
10/28/2004	US20040214400 Semiconductor device and method of manufacturing the same
10/28/2004	US20040214399 Atomic layer deposited ZrTiO4 films
10/28/2004	US20040214398 Method of generating multiple oxides by plasma nitridation on oxide
10/28/2004	US20040214397 Low voltage power MOSFET device and process for its manufacture
10/28/2004	US20040214396 Self aligned method of forming a semiconductor memory array of floating gate memory cells with horizontally oriented edges
10/28/2004	US20040214395 Self aligned method of forming a semiconductor memory array of floating gate memory cells with control gate spacers
10/28/2004	US20040214394 Nonvolatile semiconductor memory device and manufacturing method thereof
10/28/2004	US20040214393 Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing
10/28/2004	US20040214392 Semiconductor device and manufacturing method thereof
10/28/2004	US20040214391 Method for fabricating bottle-shaped trench capacitor
10/28/2004	US20040214390 Method for forming bottle-shaped trench
10/28/2004	US20040214389 Semiconductor latches and SRAM devices
10/28/2004	US20040214388 Laser irradiation apparatus, laser irradiation method, and manufacturing method for a semiconductor device
10/28/2004	US20040214387 Methods for fabricating three dimensional integrated circuits
10/28/2004	US20040214386 Semiconductor device and method of manufacturing the same
10/28/2004	US20040214385 Integrating n-type and p-type metal gate transistors
10/28/2004	US20040214384 Storage element and SRAM cell structures using vertical FETs controlled by adjacent junction bias through shallow trench isolation
10/28/2004	US20040214382 Method of manufacturing MOS transistor having short channel
10/28/2004	US20040214381 Process for the production of organic transistor and organic transistor
10/28/2004	US20040214380 Process for producing microelectromechanical components
10/28/2004	US20040214379 Rail stack array of charge storage devices and method of making same
10/28/2004	US20040214378 Method of fabricating tft with self-aligned structure
10/28/2004	US20040214375 Method of manufacturing semiconductor device, flexible substrate, and semiconductor device
10/28/2004	US20040214374 Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof
10/28/2004	US20040214373 Packaged microelectronic devices and methods for packaging microelectronic devices
10/28/2004	US20040214372 Method for fabricating image sensor semiconductor package
10/28/2004	US20040214371 System and method for conventional molding using a new design potblock
10/28/2004	US20040214370 Method for efficient capillary underfill
10/28/2004	US20040214367 Electromechanical memory array using nanotube ribbons and method for making same
10/28/2004	US20040214366 Electromechanical memory array using nanotube ribbons and method for making same
10/28/2004	US20040214365 Deposition oxide with improved oxygen bonding
10/28/2004	US20040214362 Doped semiconductor nanocrystal layers and preparation thereof
10/28/2004	US20040214361 Etchless fabrication of planar photonic crystal structures in high refractive index material
10/28/2004	US20040214357 Method and apparatus for optically aligning integrated circuit devices
10/28/2004	US20040214355 Semiconductor memory device
10/28/2004	US20040214354 Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
10/28/2004	US20040214352 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor
10/28/2004	US20040214351 Polymer-based ferroelectric memory
10/28/2004	US20040214115 emitting appropriate polarisation light waves on a photosensitive material for inducing therein a topographic modification through an aperture of at the most 100 mm bound by an opaque area, and such layer being arranged at the most 100 mm away from the aperture
10/28/2004	US20040214112 Laying down two separate photoresist layers to eliminate distortion of features in the resist image close to cavity edge; the first reduces problems, e.g., air bubbles; the second's processed normally; thickness; uniformity; integrated circuits
10/28/2004	US20040214099 for obtaining a preferable image without "stripe-shaped unevenness"; photosensitive material is exposed with a plurality of exposure heads
10/28/2004	US20040214095 Photomask for aberration measurement, aberration measurement method unit for aberration measurement and manufacturing method for device
10/28/2004	US20040214094 Photomasks including shadowing elements therein and related methods and systems
10/28/2004	US20040214026 Internal member for plasma-treating vessel and method of producing the same
10/28/2004	US20040214011 Fabrication method and substrate structure of polysilicon thin-film transistor
10/28/2004	US20040214009 Adhesion promoting technique
10/28/2004	US20040213994 Dicing/die bonding adhesion tape
10/28/2004	US20040213973 Film adhesive for sealing, film laminate for sealing and sealing method
10/28/2004	US20040213971 Forming a self-aligned pattern on an existing pattern on a substrate by coating a masking material to the substrate and allowing a portion of the masking material to preferentially attach to portions of the existing pattern; including metal elements and dielectrics; microelectronics; simplifification
10/28/2004	US20040213955 Adhesive of a silicon and silica composite particularly useful for joining silicon parts
10/28/2004	US20040213921 Coating integrated circuits or electronic substrates with fluorosilicate glass (FSG), using high density plasma chemical vapor deposition, to form protective coatings; corrosion resistance
10/28/2004	US20040213911 Method for forming porous film

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