Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
09/2007
09/27/2007US20070223280 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
09/27/2007US20070223176 Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same
09/27/2007US20070223175 Electrostatic chuck
09/27/2007US20070223174 Electrostatic chuck and manufacturing method thereof
09/27/2007US20070223173 Bipolar Electrostatic Chuck
09/27/2007US20070222999 Apparatus for monitoring a density profile of impurities
09/27/2007US20070222991 Image control in a metrology/inspection positioning system
09/27/2007US20070222979 Method to Determine the Value of Process Parameters BAsed on Scatterometry Data
09/27/2007US20070222966 Supporting plate, stage device, exposure apparatus, and exposure method
09/27/2007US20070222958 Exposure apparatus, exposure method, and method for producing device
09/27/2007US20070222956 Contamination barrier with expandable lamellas
09/27/2007US20070222933 Thin film transistor integrated circuit device, active matrix display device, and manufacturing methods of the same
09/27/2007US20070222380 Display device and electronic apparatus
09/27/2007US20070222339 Arrayed ultrasonic transducer
09/27/2007US20070222088 Overlay Metrology Mark
09/27/2007US20070222086 On-die bond wires system and method for enhancing routability of a redistribution layer
09/27/2007US20070222083 RF and MMIC stackable micro-modules
09/27/2007US20070222080 Semiconductor device and a method of manufacturing the same and designing the same
09/27/2007US20070222075 Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof
09/27/2007US20070222074 Electric Device With Vertical Component
09/27/2007US20070222073 Structure and method to improve current-carrying capabilities of c4 joints
09/27/2007US20070222065 Method for precision assembly of integrated circuit chip packages
09/27/2007US20070222062 Electronic parts packaging structure in which a semiconductor chip is mounted on a wiring substrate and buried in an insulation film
09/27/2007US20070222058 Stitched micro-via to enhance adhesion and mechanical strength
09/27/2007US20070222056 Encapsulated Electrical Component and Production Method
09/27/2007US20070222055 Method and System for Stacking Integrated Circuits
09/27/2007US20070222030 Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor
09/27/2007US20070222029 Semiconductor device having a fuse element
09/27/2007US20070222026 Method of manufacturing semiconductor device
09/27/2007US20070222019 Trench Semiconductor Device and Method of Manufacturing it
09/27/2007US20070222018 Forming of the periphery of a schottky diode with MOS trenches
09/27/2007US20070222008 Method for manufacturing plastic packaging of mems devices and structure thereof
09/27/2007US20070222007 Method of Manufacturing an Electronic Device and Electronic Device
09/27/2007US20070222002 Intermediate semiconductor device having nitrogen concentration profile
09/27/2007US20070222001 Semiconductor integrated circuit device
09/27/2007US20070222000 Method of forming silicided gate structure
09/27/2007US20070221998 Semiconductor integrated circuit device and related method
09/27/2007US20070221992 Castellated gate MOSFET device capable of fully-depleted operation
09/27/2007US20070221979 Method for production of memory devices and semiconductor memory device
09/27/2007US20070221975 Bipolar switching PCMO capacitor
09/27/2007US20070221974 Method for Forming Ferroelectric Memory Capacitor
09/27/2007US20070221970 Manufacturing method of semiconductor device and semiconductor device
09/27/2007US20070221967 Semiconductor device and method for forming the same
09/27/2007US20070221965 DMOS device with sealed channel processing
09/27/2007US20070221951 E-ink display and method for repairing the same
09/27/2007US20070221937 Semiconductor light emitting apparatus and its manufacturing method
09/27/2007US20070221927 Light-emitting diode and method for manufacturing the same
09/27/2007US20070221911 Polymer Optoelectronic Device and Methods for Making the Same
09/27/2007US20070221622 Plasma Chamber Having Plasma Source Coil and Method for Etching the Wafer Using the Same
09/27/2007US20070221619 Recessing trench to target depth using feed forward data
09/27/2007US20070221615 Liquid supply method, liquid supply apparatus, substrate polishing apparatus, and method of measuring supply flow rate of liquid
09/27/2007US20070221614 Method to reduce stacking fault nucleation sites and reduce vf drift in bipolar devices
09/27/2007US20070221519 Wafer Storage Container
09/27/2007US20070221505 Electrochemical deposition of one or more materials according to desired cross-sectional configurations so as to build up three dimensional structures from a plurality of at least partially adhered layers of deposited material; simplification
09/27/2007US20070221502 Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
09/27/2007US20070221329 Apparatus and method for distributing a liquid onto a surface of an item
09/27/2007US20070221258 Etching method and apparatus
09/27/2007US20070221253 Wet Processing Device and Wet Processing Method
09/27/2007US20070221132 Composition, coating, coated article, and method
09/27/2007US20070221130 Substrate Processing Apparatus
09/27/2007US20070221126 Chemical Liquid Supply Apparatus
09/27/2007US20070221125 Semiconductor processing system with wireless sensor network monitoring system incorporated therewith
09/27/2007US20070221121 Method of semiconductor nanocrystal synthesis
09/27/2007US20070221120 Level Realignment Following an Epitaxy Step
09/27/2007US20070220813 Aqueous abrasive solution of polishing particles and a dispersant and containing a meth)acrylic acid polymer, a 1,3,5- or 1,2,4-triazine derivative to reduce speed of polishing of nitride film and an amine, preferably a tetramethylammonium salt, to increase speed of silicon oxide film removal
09/27/2007DE112005002538T5 Prüfvorrichtung und Prüfverfahren Tester and test methods
09/27/2007DE112005002414T5 Elektropolier-Elektrolyt und Verfahren zur Planarisierung einer Metallschicht unter Verwendung desselben Thereof electropolishing electrolyte and method for planarizing a metal layer using
09/27/2007DE112005002324T5 Verfahren zum Herstellen eines Silicon-On-Insulator (SOI) Wafers mit einer Ätzstoppschicht A method for manufacturing a Silicon-On-Insulator (SOI) wafer having an etch stop layer
09/27/2007DE112005002302T5 Metallgate-Transistoren mit epitaktischen Source- und Drainegionen Metal gate transistors with source and epitaxial Drainegionen
09/27/2007DE10394018B4 Lichtemittierende Halbleitervorrichtung mit Schichten auf Borphosphid-Basis und Verfahren zu ihrer Herstellung A semiconductor light emitting device comprising layers of boron-phosphide-based and processes for their preparation
09/27/2007DE10357796B4 Stossstromfestes Leistungshalbleiterbauelement und Verfahren zu seiner Herstellung Surge current resistant power semiconductor device and method for its production
09/27/2007DE10355586B4 Chip-on-Chip-Struktur und Verfahren zu deren Herstellung Chip-on-chip structure and method for their preparation
09/27/2007DE10330043B4 System und Kalibrierverfahren System and calibration
09/27/2007DE10325011B4 Verfahren zur Herstellung unterschiedlich tiefer Dotierungsgebiete in einem Substrat Process for the preparation of different depths doped regions in a substrate
09/27/2007DE10300102B4 Gestell zum Unterbringen von Platten Frame for accommodating boards
09/27/2007DE10242145B4 Halbleiterbauelement mit lokaler Zwischenverbindungsschicht und Herstellungsverfahren A semiconductor device comprising a local interconnect layer and manufacturing processes
09/27/2007DE10235455B4 Teilchenoptische Vorrichtung und Verfahren zum Betrieb derselben Particle-optical apparatus and method for operating the same
09/27/2007DE10233637B4 Systeme und Verfahren zum Bilden von Datenspeichervorrichtungen Systems and methods for forming data storage means
09/27/2007DE10229692B4 Leiterplatte, Mehrchippackung und zugehöriges Herstellungsverfahren PCB, multi-chip package and manufacturing method thereof
09/27/2007DE10228804B4 Ein virtualisierter generischer Ausrüstungsmodelldaten- und Steuerrouter für eine Fabrikautomatisierung A virtualized generic Ausrüstungsmodelldaten- and control router for factory automation
09/27/2007DE10223738B4 Verfahren zur Verbindung integrierter Schaltungen A method for bonding integrated circuits
09/27/2007DE10207130B4 Verfahren zur Herstellung eines Bauelements sowie Bauelement mit einer Edelmetallschicht, einer Edelmetallsilizidschicht und einer oxidierten Silizidschicht A method for producing a component and component with a noble metal layer, a silicide layer Edelmetallsilizidschicht and an oxidized
09/27/2007DE102007008779A1 Verfahren zur Herstellung von Isolationsgebieten von Halbleiteranordnungen und Strukturen derselben A process for producing insulation regions of semiconductor devices and structures thereof
09/27/2007DE102006039001A1 Verfahren zum Reduzieren von Metall, mehrschichtige Verbindungsstruktur und Herstellungsverfahren dafür, und Halbleitervorrichtung und Herstellungsverfahren dafür A method of reducing metal, multilayer interconnection structure and manufacturing method therefor, and the semiconductor device and manufacturing method thereof
09/27/2007DE102006024175B3 Light emitting diode primary multi-layer electrodes manufacturing method for e.g. backlight, involves masking epitaxial substrate with magnetizable mask that is hold by magnet, where magnetizable mask has contact windows
09/27/2007DE102006013721A1 Analog silicon-on-insulator semiconductor circuit arrangement, has diode doped region formed in active semiconductor region of specific conductive type up to surface of insulating layer, and measuring diode realized over diode side
09/27/2007DE102006013517A1 Substrate e.g. plastic foil, treating method for production of e.g. flexible display, involves removing flexible surface electrode of carrier by peeling such that pull off force works along line, and arranging insulation layer
09/27/2007DE102006013419A1 Integrated electronic circuit manufacturing method, involves subjecting porous silicon in wafer to thermal treatment, and closing pores at process of treatment, where material needed for closing is derived from low lying layer of silicon
09/27/2007DE102006013336A1 Kontaktierungsverfahren für Halbleitermaterial sowie Halbleiterbauelement Contacting methods for semiconductor materials and semiconductor device
09/27/2007DE102006013313A1 Verfahren zur Erzeugung eines gezielt dotierten Bereichs in einer Halbleiterschicht unter Verwendung von Aus-Diffusion und entsprechendes Halbleiterbauelement A process for producing a selectively doped region in a semiconductor layer using out-diffusion and corresponding semiconductor component
09/27/2007DE102006013209A1 Verfahren zur Herstellung von Halbleiterbauelementen mit Oxidschichten und Halbleiterbauelement mit Oxidschichten A process for producing semiconductor devices with oxide layers and semiconductor device having oxide layers
09/27/2007DE102006012857A1 Verfahren zur Herstellung einer Halbleiterstruktur und entsprechende Halbleiterstruktur A process for producing a semiconductor structure and corresponding semiconductor structure
09/27/2007DE102006011283B3 Trench power transistor e.g. lamellar trench power transistor, manufacturing method, involves selecting implantation energy and dose so that principal part of dose is placed below source electrode, and pinch resistance of contact is reduced
09/27/2007DE102006007052B3 Erzeugung von Halbleiterzonen mit steilem Dotierprofil Production of semiconductor regions with steep doping
09/27/2007DE102005030946B4 Halbleiterbauteil mit Verdrahtungssubstrat und Lotkugeln als Verbindungselement sowie Verfahren zur Herstellung des Halbleiterbauteils A semiconductor device comprising wiring substrate, and solder balls as a connecting element and method of manufacturing the semiconductor device
09/27/2007DE102004027271B4 Verfahren zur Herstellung eines Grabenkondensators A method for producing a capacitor grave
09/27/2007DE102004026534B4 Halbleiter-Montageeinrichtung Semi-conductor mounting means
09/27/2007DE102004011431B4 Verfahren zum Herstellen eines nicht flüchtigen Halbleiterspeichers A method of manufacturing a nonvolatile semiconductor memory
09/27/2007DE10113675B4 Automatisch ausrichtende Pressvorrichtung Automatically aligning pressing device
09/27/2007CA2582632A1 A gettering method and a wafer using the same