Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2008
11/20/2008US20080283994 Stacked package structure and fabrication method thereof
11/20/2008US20080283992 Multi layer low cost cavity substrate fabrication for pop packages
11/20/2008US20080283990 Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom
11/20/2008US20080283989 Wafer level package and wafer level packaging method
11/20/2008US20080283987 Semiconductor device and method for manufacturing the same
11/20/2008US20080283986 System-in-package type semiconductor device
11/20/2008US20080283984 Package structure and manufacturing method thereof
11/20/2008US20080283983 Semiconductor device and manufacturing method thereof
11/20/2008US20080283982 Multi-chip semiconductor device having leads and method for fabricating the same
11/20/2008US20080283981 Chip-On-Lead and Lead-On-Chip Stacked Structure
11/20/2008US20080283980 Lead frame for semiconductor package
11/20/2008US20080283977 Stacked packaged integrated circuit devices, and methods of making same
11/20/2008US20080283975 Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion
11/20/2008US20080283974 Semiconductor device and method of manufacturing semiconductor device
11/20/2008US20080283973 Integrated circuit including a dielectric layer and method
11/20/2008US20080283972 Silicon Compounds for Producing Sio2-Containing Insulating Layers on Chips
11/20/2008US20080283971 Semiconductor Device and Its Fabrication Method
11/20/2008US20080283970 Semiconductor integrated circuit device and process for manufacturing the same
11/20/2008US20080283968 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
11/20/2008US20080283966 High Density Capacitor Using Topographic Surface
11/20/2008US20080283964 Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
11/20/2008US20080283962 Self-aligned and extended inter-well isolation structure
11/20/2008US20080283961 Semiconductor device and method of producing the same
11/20/2008US20080283960 Production of a Carrier Wafer Contact in Trench Insulated Integrated Soi Circuits Having High-Voltage Components
11/20/2008US20080283958 Semiconductor device and method for manufacturing the same
11/20/2008US20080283957 Method of Fabricating Semiconductor Device Having Self-Aligned Contact Plug and Related Device
11/20/2008US20080283956 Process for high voltage superjunction termination
11/20/2008US20080283955 Temperature Sensing Device
11/20/2008US20080283952 Semiconductor Package, Method of Fabricating the Same and Semiconductor Package Module For Image Sensor
11/20/2008US20080283951 Semiconductor device and method for manufacturing the same
11/20/2008US20080283948 Semiconductor device having image sensor
11/20/2008US20080283946 Magnetoresistive random access memory and method of manufacturing the same
11/20/2008US20080283944 PHOTOSTRUCTURABLE GLASS MICROELECTROMECHANICAL (MEMs) DEVICES AND METHODS OF MANUFACTURE
11/20/2008US20080283943 Electronic Device Comprising a Mems Element
11/20/2008US20080283940 LOW-TEMPERATURE GROWN HIGH QUALITY ULTRA-THIN CoTiO3 GATE DIELECTRICS
11/20/2008US20080283938 Semiconductor device and method for manufacturing the same
11/20/2008US20080283937 Semiconductor Device and Method for Fabricating the Same
11/20/2008US20080283936 Silicon germanium flow with raised source/drain regions in the nmos
11/20/2008US20080283935 Trench isolation structure and method of manufacture therefor
11/20/2008US20080283934 Substantially l-shaped silicide for contact and related method
11/20/2008US20080283933 Oxygen-rich layers underlying BPSG
11/20/2008US20080283932 Semiconductor Device Manufactured Using a Gate Silicidation Involving a Disposable Chemical/Mechanical Polishing Stop Layer
11/20/2008US20080283930 Extended depth inter-well isolation structure
11/20/2008US20080283929 Semiconductor device and manufacturing method of the same
11/20/2008US20080283928 Semiconductor device and manufacturing method thereof
11/20/2008US20080283927 Tunable stressed polycrystalline silicon on dielectrics in an integrated circuit
11/20/2008US20080283926 Method for integrating silicon germanium and carbon doped silicon within a strained cmos flow
11/20/2008US20080283925 Multi-Fin Component Arrangement and Method for Manufacturing a Multi-Fin Component Arrangement
11/20/2008US20080283924 Semiconductor device and method for fabricating the same
11/20/2008US20080283923 Semiconductor device and manufacturing method thereof
11/20/2008US20080283922 Semiconductor device and manufacturing method thereof
11/20/2008US20080283919 Single and double-gate pseudo-fet devices for semiconductor materials evaluation
11/20/2008US20080283918 Ultra Thin Channel (UTC) MOSFET Structure Formed on BOX Regions Having Different Depths and Different Thicknesses Beneath the UTC and SourceDrain Regions and Method of Manufacture Thereof
11/20/2008US20080283916 Semiconductor substrate, semiconductor device and manufacturing method thereof
11/20/2008US20080283915 High voltage semiconductor device and method of manufacturing the same
11/20/2008US20080283914 Semiconductor device and method for manufacturing the same
11/20/2008US20080283912 Semiconductor device having super junction structure and method of manufacturing the same
11/20/2008US20080283911 High-voltage semiconductor device and method for manufacturing the same
11/20/2008US20080283910 Integrated circuit and method of forming an integrated circuit
11/20/2008US20080283909 Semiconductor device and method for manufacturing same
11/20/2008US20080283908 Lateral dmos device structure and manufacturing method thereof
11/20/2008US20080283907 Semiconductor device and method of manufacturing the same
11/20/2008US20080283906 Semiconductor device having tipless epitaxial source/drain regions
11/20/2008US20080283905 Nonvolatile memory devices and methods of fabricating the same
11/20/2008US20080283903 Transistor With Quantum Dots in Its Tunnelling Layer
11/20/2008US20080283902 Non-volatile memory device and method of manufacturing the same
11/20/2008US20080283900 Semiconductor device and method for manufacturing the same
11/20/2008US20080283899 Conductive spacers extended floating gates
11/20/2008US20080283898 Non-volatile semiconductor memory device and method of manufacturing the same
11/20/2008US20080283897 Flash memory device and fabrication method thereof
11/20/2008US20080283895 Memory structure and fabricating method thereof
11/20/2008US20080283894 Forming floating body RAM using bulk silicon substrate
11/20/2008US20080283893 Illuminating efficiency-increasable and light-erasable embedded memory structure and fabricating method thereof
11/20/2008US20080283892 Cylinder-Type Capacitor and Storage Device, and Method(s) for Fabricating the Same
11/20/2008US20080283891 Semiconductor structure and manufacturing method thereof
11/20/2008US20080283890 Deep trench inter-well isolation structure
11/20/2008US20080283888 Spin transistor, programmable logic circuit, and magnetic memory
11/20/2008US20080283881 Image Sensor and Method for Manufacturing the Same
11/20/2008US20080283878 Method and Apparatus for Monitoring Endcap Pullback
11/20/2008US20080283877 Strained-channel transistor device
11/20/2008US20080283874 Field-Effect Transistors
11/20/2008US20080283873 Semiconductor device and method of manufacturing the same
11/20/2008US20080283872 Variable path wiring cell, semiconductor integrated circuit designing method thereof, and forming method of variable path wiring cell
11/20/2008US20080283868 Semiconductor Device
11/20/2008US20080283865 III-Nitride Compound Semiconductor Light Emitting Device
11/20/2008US20080283864 Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
11/20/2008US20080283861 Power light emitting die package with reflecting lens and the method of making the same
11/20/2008US20080283852 Light-emitting device and a method for producing the same
11/20/2008US20080283848 Semiconductor device and method for manufacturing the same
11/20/2008US20080283847 Integrated circuit package provided with cooperatively arranged illumination and sensing capabilities
11/20/2008US20080283844 Method for manufacturing a field effect transistor having a field plate
11/20/2008US20080283842 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
11/20/2008US20080283841 Tft substrate and manufacturing method, and display device with the same
11/20/2008US20080283840 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
11/20/2008US20080283839 Non-volatile semiconductor storage device and manufacturing method thereof
11/20/2008US20080283838 Semiconductor device and manufacturing method thereof
11/20/2008US20080283836 Light emitting display device and method for fabricating the same
11/20/2008US20080283835 Semiconductor device and method of manufacturing the same
11/20/2008US20080283833 Thin Film Transistor Array Panel and Manufacturing Method Thereof
11/20/2008US20080283832 Integrated Circuit Comprising an Amorphous Region and Method of Manufacturing an Integrated Circuit