Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2008
11/27/2008US20080290444 Capacitor structure in a semiconductor device
11/27/2008US20080290443 Semiconductor device with a plurality of isolated conductive films
11/27/2008US20080290442 Process for high voltage superjunction termination
11/27/2008US20080290438 Image sensing devices and methods for fabricating the same
11/27/2008US20080290435 Wafer level lens arrays for image sensor packages and the like, image sensor packages, and related methods
11/27/2008US20080290433 Monolithic nuclear event detector and method of manufacture
11/27/2008US20080290432 System having improved surface planarity for bit material deposition
11/27/2008US20080290431 Nanorod sensor with single-plane electrodes
11/27/2008US20080290430 Stress-Isolated MEMS Device and Method Therefor
11/27/2008US20080290429 Semiconductor device and method for fabricating the same
11/27/2008US20080290428 Use of alloys to provide low defect gate full silicidation
11/27/2008US20080290427 Use of dopants to provide low defect gate full silicidation
11/27/2008US20080290426 Dmos device with sealed channel processing
11/27/2008US20080290425 Method for Fabricating a Semiconductor Element, and Semiconductor Element
11/27/2008US20080290421 Contact barrier structure and manufacturing methods
11/27/2008US20080290420 SiGe or SiC layer on STI sidewalls
11/27/2008US20080290419 Low on resistance cmos transistor for integrated circuit applications
11/27/2008US20080290418 Method for Integrating Nanotube Devices with CMOS for RF/Analog SoC Applications
11/27/2008US20080290417 ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARRIER LAYER AND PROCESS OF MAKING THE SAME
11/27/2008US20080290416 High-k metal gate devices and methods for making the same
11/27/2008US20080290415 Semiconductor device and method for fabricating the same
11/27/2008US20080290414 Integrating strain engineering to maximize system-on-a-chip performance
11/27/2008US20080290412 Suppressing short channel effects
11/27/2008US20080290411 Semiconductor device and method for fabricating the same
11/27/2008US20080290410 Mosfet With Isolation Structure and Fabrication Method Thereof
11/27/2008US20080290409 Halo-first ultra-thin soi fet for superior short channel control
11/27/2008US20080290408 Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor
11/27/2008US20080290406 Method for producing a vertical field effect transistor
11/27/2008US20080290404 Semiconductor device and a method for manufacturing the same
11/27/2008US20080290402 Semiconductor device and method for fabricating the same
11/27/2008US20080290400 SONOS ONO stack scaling
11/27/2008US20080290399 Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
11/27/2008US20080290398 Nonvolatile charge trap memory device having <100> crystal plane channel orientation
11/27/2008US20080290397 Memory cell and method for manufacturing and operating the same
11/27/2008US20080290395 Semiconductor device and method of manufacturing the same
11/27/2008US20080290394 Gate electrode for a nonvolatile memory cell
11/27/2008US20080290393 Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
11/27/2008US20080290391 Memory cell and method for manufacturing the same
11/27/2008US20080290390 Semiconductor device and method for manufacturing the same
11/27/2008US20080290389 Dynamic random access memory and manufacturing method thereof
11/27/2008US20080290387 Semiconductor device having reduced sub-threshold leakage
11/27/2008US20080290386 Floating gate memory device with increased coupling coefficient
11/27/2008US20080290385 Method for manufacturing ferroelectric capacitor, and ferroelectric capacitor
11/27/2008US20080290384 Microelectronic Device Provided with Transistors Coated with a Piezoelectric Layer
11/27/2008US20080290383 Cmos imaging device comprising a microlens array exhibiting a high filling rate
11/27/2008US20080290380 Semiconductor device with raised spacers
11/27/2008US20080290379 Dual trench isolation for cmos with hybrid orientations
11/27/2008US20080290378 Transistor package with wafer level dielectric isolation
11/27/2008US20080290374 Layout for high density conductive interconnects
11/27/2008US20080290372 Semiconductor device and method of manufacturing the same
11/27/2008US20080290370 Semiconductor devices and methods of manufacturing thereof
11/27/2008US20080290367 Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
11/27/2008US20080290353 Microscale optoelectronic device packages
11/27/2008US20080290349 Compound semiconductor wafer, light emitting diode and manufacturing method thereof
11/27/2008US20080290345 Semiconductor device having display device
11/27/2008US20080290344 Image Display Device And Method For Manufacturing The Same
11/27/2008US20080290342 Methods and apparatus for a flexible circuit interposer
11/27/2008US20080290340 Method for fabricating a semiconductor device having embedded interconnect structures to improve die corner robustness
11/27/2008US20080290326 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
11/27/2008US20080289867 Multi-strand substrate for ball-grid array assemblies and method
11/27/2008US20080289767 Plasma processing apparatus
11/27/2008US20080289766 Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
11/27/2008US20080289765 Plasma processing apparatus
11/27/2008US20080289573 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
11/27/2008US20080289365 Method for manufacturing glass-ceramics
11/27/2008US20080289261 Polishing composition and polishing method
11/27/2008DE202008004128U1 Geschlitzte Elektrode und Plasmaapparatur, die dieselbe verwendet Slotted electrode and plasma apparatus that uses the same
11/27/2008DE19901088B4 Vorrichtung zum Behandeln eines bandförmigen Substrates mit einem Gas An apparatus for treating a strip-shaped substrate with a gas
11/27/2008DE19828574B4 Verfahren zur Metallisierung von Oberflächenbereichen kleinvolumiger keramischer Formkörper A method for metallization of surface areas of low-volume ceramic molded body
11/27/2008DE19827214B4 Herstellungsverfahren für eine Halbleitervorrichtung Manufacturing method of a semiconductor device
11/27/2008DE112007000263T5 Oberflächenmikromechanik-Differentialmikrofon Surface micromachined differential microphone
11/27/2008DE10351511B4 Halbleitervorrichtung mit Verriegelungsschaltung A semiconductor device comprising locking circuit
11/27/2008DE102008024468A1 Laserbearbeitungsmaschine Laser processing machine
11/27/2008DE102008022825A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
11/27/2008DE102008021182A1 Halbleitereinrichtung und Herstellungsverfahren für eine Halbleitereinrichtung A semiconductor device and manufacturing method of a semiconductor device
11/27/2008DE102007063363A1 Vorrichtung zur Dotierung und Beschichtung von Halbleitermaterial bei niedrigem Druck A device for doping and coating of semiconductor material at low pressure
11/27/2008DE102007044998A1 Polierverfahren zur Prognose und Erkennung des Polierendes von Filmen und Vorrichtung zur Durchführung des Verfahrens einschließlich Verfahren und Vorrichtung zur Echtzeitfilmdickenaufzeichnung Polishing method for prediction and detection of the polishing end of movies and apparatus for performing the method including methods and apparatus for real time recording film thickness
11/27/2008DE102007035992A1 Ceroxid, Siliciumdioxid oder Schichtsilikat und Aminosäure enthaltende Dispersion Ceria, silica or layered silicate and amino acid-containing dispersion
11/27/2008DE102007033815A1 Verfahren und Vorrichtung zum Bestimmen der relativen Overlay-Verschiebung von übereinander liegenden Schichten Method and apparatus for determining the relative displacement of overlay superimposed layers
11/27/2008DE102007026082A1 Verfahren zur Behandlung von flachen Substraten sowie Verwendung des Verfahrens A process for the treatment of flat substrates, and using the method
11/27/2008DE102007026081A1 Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer A process for treatment of silicon wafers, and silicon wafers treatment liquid
11/27/2008DE102007025098A1 Device for automatic destacking, contact less isolation, centering, gripping and handling of flat, disk-like articles, has overlaying centering units that are arranged at mobile quadrangular handling base plate at two corners
11/27/2008DE102007024798A1 Device for depositing nitrogen and gallium, indium or aluminum containing semiconductor layers on substrate, comprises process chamber, first inlet for gallium chloride-containing process gas, and second inlet for ammonia-containing gas
11/27/2008DE102007024461A1 Halbleiterelement Semiconductor element
11/27/2008DE102007023860A1 Circuit module for assembling an electronic circuit, particularly radio frequency identification-tags formed as multi-layer bodies, has base electrode layer formed from electrically conductive material with two base electrodes
11/27/2008DE102007022748A1 Verfahren zur Strukturierung eines Materials und strukturiertes Material Method for structuring a material and structured material
11/27/2008DE102007016290A1 Verfahren zum Herstellen von Halbleiterstrukturen A method for manufacturing semiconductor structures
11/27/2008DE102007009878B4 Vorrichtung und Verfahren zum Durchführen eines Tests von Halbleiter-Bauelementen mit optischer Schnittstelle Apparatus and method for performing a test of semiconductor devices with optical interface
11/27/2008DE102006027880B4 Verwendung von Kohlenstoffnanoröhren als Isolationsschichtmaterial für die Mikroelektronik The use of carbon nanotubes as an insulating layer material for microelectronics
11/27/2008DE102006002904B4 Bauelementanordnung und Verfahren zur Ermittlung der Temperatur in einem Halbleiterbauelement Component assembly and method for determining the temperature in a semiconductor device
11/27/2008DE102005014714B4 Halbleitervorrichtung mit isoliertem Gate A semiconductor device comprising insulated gate
11/27/2008DE102004063610B4 Verfahren zur Entfernung eines Fotofarblacks A method for removing a photo resist color
11/27/2008DE102004054564B4 Halbleitersubstrat und Verfahren zu dessen Herstellung Semiconductor substrate and process for its preparation
11/26/2008EP1996002A1 Bump forming method and bump forming apparatus
11/26/2008EP1995796A2 Single crystal GaN substrate and laser diode produced thereon
11/26/2008EP1995788A1 Method for manufacturing substrate for photoelectric conversion element
11/26/2008EP1995787A2 Semiconductor device having oxide semiconductor layer and manufacturing method therof
11/26/2008EP1995778A2 Method for stacking integrated circuits and resultant device
11/26/2008EP1995771A1 Substrate processing apparatus and substrate processing method
11/26/2008EP1995770A1 Method of seasoning film-forming apparatus
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