Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2010
03/23/2010US7684661 Optical module and method of producing optical module
03/23/2010US7684229 Scalable embedded DRAM array
03/23/2010US7684040 Overlay mark and application thereof
03/23/2010US7684008 Lithographic apparatus and device manufacturing method
03/23/2010US7683978 Display device
03/23/2010US7683977 Display device and method of manufacturing the display device
03/23/2010US7683961 CMOS image sensor using gradient index chip scale lenses
03/23/2010US7683535 Light-emitting device and method of manufacturing the same
03/23/2010US7683487 Structure applied to a photolithographic process
03/23/2010US7683482 Electronic component unit
03/23/2010US7683473 Semiconductor device, fabrication method therefor, and film fabrication method
03/23/2010US7683470 LED package
03/23/2010US7683459 Bonding method for through-silicon-via based 3D wafer stacking
03/23/2010US7683457 Group I-VII semiconductor single crystal thin film and process for producing same
03/23/2010US7683455 Semiconductor device and method of manufacturing thereof
03/23/2010US7683451 CMOS image sensors with light shielding patterns
03/23/2010US7683449 Radiation-detecting optoelectronic component
03/23/2010US7683441 Semiconductor device and method for fabricating the same
03/23/2010US7683434 Preventing cavitation in high aspect ratio dielectric regions of semiconductor device
03/23/2010US7683432 Semiconductor device having high-k gate dielectric layer and method for manufacturing the same
03/23/2010US7683429 Microstructure and manufacturing method of the same
03/23/2010US7683424 Ballistic direct injection NROM cell on strained silicon structures
03/23/2010US7683423 Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
03/23/2010US7683419 Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same
03/23/2010US7683418 High-temperature stable gate structure with metallic electrode
03/23/2010US7683414 Semiconductor device, its manufacturing method and electronic apparatus thereof
03/23/2010US7683413 Double sided container capacitor for a semiconductor device
03/23/2010US7683405 MOS transistors having recesses with elevated source/drain regions
03/23/2010US7683402 Semiconductor device and manufacturing method thereof
03/23/2010US7683386 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
03/23/2010US7683375 Thin-film transistor with controllable etching profile
03/23/2010US7683372 Semiconductor apparatus and method for manufacturing the same
03/23/2010US7683369 Structure for measuring body pinch resistance of high density trench MOSFET array
03/23/2010US7683364 Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
03/23/2010US7683350 Ion implantation method
03/23/2010US7683347 Technique for improving ion implantation throughput and dose uniformity
03/23/2010US7683289 Apparatus and method for controlling plasma density profile
03/23/2010US7683268 Semiconductor module with high process accuracy, manufacturing method thereof, and semiconductor device therewith
03/23/2010US7683022 Methods of removing metal-containing materials
03/23/2010US7683021 Methods of removing metal-containing materials
03/23/2010US7683020 Selectively etching, e.g., metal nitrides, between polycrystalline silicon and borophosphosilicate glass using a solution of H2O2 and nitrogen compound (NH4OH or tetramethylammonium hydroxide) to form space between the silicon and glass; for use in forming capacitors
03/23/2010US7683001 Yttrium metal-doped aluminum oxide consisting of yttrium, aluminum, and oxygen; semiconductor substrate; formed by chemical vapor deposition or atomic layer deposition
03/23/2010US7682991 Method of manufacturing silicon carbide semiconductor device
03/23/2010US7682990 Method of manufacturing nonvolatile semiconductor memory device
03/23/2010US7682989 Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion
03/23/2010US7682988 Thermal treatment of nitrided oxide to improve negative bias thermal instability
03/23/2010US7682987 Device for processing substrate and method of manufacturing semiconductor device
03/23/2010US7682986 Ultra-high aspect ratio dielectric etch
03/23/2010US7682985 Dual doped polysilicon and silicon germanium etch
03/23/2010US7682984 Interferometer endpoint monitoring device
03/23/2010US7682983 Manufacturing method of electronic device with resist ashing
03/23/2010US7682982 Plasma processing apparatus and control method thereof
03/23/2010US7682981 Topography transfer method with aspect ratio scaling
03/23/2010US7682980 Method to improve profile control and N/P loading in dual doped gate applications
03/23/2010US7682979 Phase change alloy etch
03/23/2010US7682978 Plasma processing method and high-rate plasma etching apparatus
03/23/2010US7682977 Methods of forming trench isolation and methods of forming arrays of FLASH memory cells
03/23/2010US7682976 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
03/23/2010US7682975 Semiconductor device fabrication method
03/23/2010US7682974 Method for manufacturing semiconductor device
03/23/2010US7682973 Method of forming a carbon nanotube structure and method of manufacturing field emission device using the method of forming a carbon nanotube structure
03/23/2010US7682972 Advanced multilayer coreless support structures and method for their fabrication
03/23/2010US7682971 Semiconductor device and method for manufacturing the same
03/23/2010US7682970 Maskless nanofabrication of electronic components
03/23/2010US7682969 Method of fabricating semiconductor device
03/23/2010US7682968 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby
03/23/2010US7682967 Method of forming metal wire in semiconductor device
03/23/2010US7682965 Method for manufacturing semiconductor device
03/23/2010US7682964 Method of forming a contact hole in a semiconductor device
03/23/2010US7682963 Air gap for interconnect application
03/23/2010US7682962 Method for fabricating stacked semiconductor components with through wire interconnects
03/23/2010US7682961 Methods of forming solder connections and structure thereof
03/23/2010US7682960 Method of fabricating a wafer structure having a pad and a first protection layer and a second protection layer
03/23/2010US7682959 Method of forming solder bump on high topography plated Cu
03/23/2010US7682958 Method for producing an integrated circuit including a fuse element, a fuse-memory element or a resistor element
03/23/2010US7682957 Method of forming pad and fuse in semiconductor device
03/23/2010US7682956 Three-dimensional metal microfabrication process and devices produced thereby
03/23/2010US7682955 Method for forming deep well of power device
03/23/2010US7682954 Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
03/23/2010US7682953 Method of forming p-type compound semiconductor layer
03/23/2010US7682952 Method for forming low defect density alloy graded layers and structure containing such layers
03/23/2010US7682951 Method for fabricating a polysilicon layer having large and uniform grains
03/23/2010US7682950 Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method
03/23/2010US7682949 Laser treatment device, laser treatment method, and semiconductor device fabrication method
03/23/2010US7682948 Digital light valve
03/23/2010US7682947 Epitaxial semiconductor deposition methods and structures
03/23/2010US7682946 Apparatus and process for plasma-enhanced atomic layer deposition
03/23/2010US7682945 Phase change element extension embedded in an electrode
03/23/2010US7682944 Pendeo epitaxial structures and devices
03/23/2010US7682943 Nanostructures and methods for manufacturing the same
03/23/2010US7682942 Method for reducing pillar structure dimensions of a semiconductor device
03/23/2010US7682941 Integrated circuit with bulk and SOI devices connected with an epitaxial region
03/23/2010US7682940 Use of Cl2 and/or HCl during silicon epitaxial film formation
03/23/2010US7682937 Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
03/23/2010US7682936 Reduction in thickness of semiconductor component on substrate
03/23/2010US7682935 Process of manufacture of ultra thin semiconductor wafers with bonded conductive hard carrier
03/23/2010US7682934 Wafer packaging and singulation method
03/23/2010US7682933 Wafer alignment and bonding
03/23/2010US7682932 Method for fabricating a hybrid orientation substrate
03/23/2010US7682931 Method for manufacturing semiconductor device
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