Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2010
03/30/2010US7688088 Inspection method and inspection apparatus for inspecting electrical characteristics of inspection object
03/30/2010US7688062 Probe station
03/30/2010US7687922 Element mounting structure and element mounting method
03/30/2010US7687921 High density memory device manufacturing using isolated step pads
03/30/2010US7687918 Semiconductor device and method for manufacturing same
03/30/2010US7687917 Single damascene structure semiconductor device having silicon-diffused metal wiring layer
03/30/2010US7687914 Semiconductor device and a method of manufacturing the same and designing the same
03/30/2010US7687913 Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
03/30/2010US7687911 Silicon-alloy based barrier layers for integrated circuit metal interconnects
03/30/2010US7687910 Semiconductor device and method of fabricating the same
03/30/2010US7687909 Metal / metal nitride barrier layer for semiconductor device applications
03/30/2010US7687908 Thin film electrode for high-quality GaN optical devices
03/30/2010US7687907 Semiconductor device and manufacturing method of the same
03/30/2010US7687905 Integrated circuit packages, systems, and methods
03/30/2010US7687904 Plurality of devices attached by solder bumps
03/30/2010US7687897 Mountable integrated circuit package-in-package system with adhesive spacing structures
03/30/2010US7687892 Quad flat package
03/30/2010US7687890 Controlling substrate surface properties via colloidal coatings
03/30/2010US7687888 Semiconductor film with graded gallium nitride layer deposited on the substrate having a varying composition of a continuous grade from an initial to a final composition formed from a precursor without interruption in the supply
03/30/2010US7687887 Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter
03/30/2010US7687881 Small electrode for phase change memories
03/30/2010US7687879 Intermediate semiconductor device structure
03/30/2010US7687878 MOSFET device having screening layers formed between main gate and passing gate and method for manufacturing the same
03/30/2010US7687877 Interconnect structure with a mushroom-shaped oxide capping layer and method for fabricating same
03/30/2010US7687869 Semiconductor device and method of manufacturing the same
03/30/2010US7687867 Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme
03/30/2010US7687860 Semiconductor device including impurity regions having different cross-sectional shapes
03/30/2010US7687855 Semiconductor device having impurity region
03/30/2010US7687854 Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode
03/30/2010US7687849 Method for manufacturing semiconductor integrated circuit device
03/30/2010US7687846 Nonvolatile memory device
03/30/2010US7687844 Semiconductor constructions
03/30/2010US7687842 Bit line structure and method for the production thereof
03/30/2010US7687840 Crosspoint structure semiconductor memory device, and manufacturing method thereof
03/30/2010US7687839 Scratch protection for direct contact sensors
03/30/2010US7687838 Resistive memory device having array of probes and method of manufacturing the resistive memory device
03/30/2010US7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
03/30/2010US7687827 III-nitride materials including low dislocation densities and methods associated with the same
03/30/2010US7687825 Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication
03/30/2010US7687824 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
03/30/2010US7687813 Standing transparent mirrorless light emitting diode
03/30/2010US7687811 Vertical light emitting device having a photonic crystal structure
03/30/2010US7687809 Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
03/30/2010US7687799 Methods of forming buffer layer architecture on silicon and structures formed thereby
03/30/2010US7687796 Method and apparatus for forming an integrated circuit electrode having a reduced contact area
03/30/2010US7687793 Resistance variable memory cells
03/30/2010US7687787 Profile adjustment in plasma ion implanter
03/30/2010US7687740 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
03/30/2010US7687709 Photovoltaic device
03/30/2010US7687446 Method of removing residue left after plasma process
03/30/2010US7687409 Atomic layer deposited titanium silicon oxide films
03/30/2010US7687408 Method for integrated circuit fabrication using pitch multiplication
03/30/2010US7687407 Method for reducing line edge roughness for conductive features
03/30/2010US7687406 Methods of eliminating pattern collapse on photoresist patterns
03/30/2010US7687405 Photomasks; photolithography; electroless plating; reactive ion etching; self-assembly; dip coating; perfluoropolyethers
03/30/2010US7687404 Method for manufacturing display device
03/30/2010US7687403 Method of manufacturing flash memory device
03/30/2010US7687402 Methods of making optoelectronic devices, and methods of making solar cells
03/30/2010US7687401 Combusting a cerium salt dissolved in an organic solvent and a titanium chelate dissolved in solvent in combustion supporting gas to form spherical ceria/titania particles; collecting the agglomerates; crystal cerium oxide core, amorphous titanium cladding; abrasives; chemical mechanical polishing
03/30/2010US7687398 Technique for forming nickel silicide by depositing nickel from a gaseous precursor
03/30/2010US7687397 Front-end processed wafer having through-chip connections
03/30/2010US7687396 Method of forming silicided gates using buried metal layers
03/30/2010US7687395 Contact aperture and contact via with stepped sidewall and methods for fabrication thereof
03/30/2010US7687394 Method for forming inter-layer dielectric of low dielectric constant and method for forming copper wiring using the same
03/30/2010US7687393 Polishing composition and rinse composition
03/30/2010US7687392 Semiconductor device having metal wiring and method for fabricating the same
03/30/2010US7687391 Electrically optimized and structurally protected via structure for high speed signals
03/30/2010US7687390 Manufacturing method of a transparent conductive film, a manufacturing method of a transparent electrode of an organic electroluminescence device, an organic electroluminescence device and the manufacturing method
03/30/2010US7687389 Method for fabricating semiconductor device
03/30/2010US7687388 Method of fabricating semiconductor high-voltage device comprising the steps of using photolithographic processes to form nitride spacer regions and dry etch process to form deep trench regions
03/30/2010US7687387 Semiconductor device and method of manufacturing the same
03/30/2010US7687386 Method of forming a semiconductor structure having metal migration semiconductor barrier layers
03/30/2010US7687385 Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
03/30/2010US7687384 Semiconductor device and method for fabricating the same that includes angled implantation of poly layer
03/30/2010US7687383 Methods of depositing electrically active doped crystalline Si-containing films
03/30/2010US7687382 Method of making group III nitride-based compound semiconductor
03/30/2010US7687381 Method of forming electrical interconnects within insulating layers that form consecutive sidewalls including forming a reaction layer on the inner sidewall
03/30/2010US7687380 Laser annealing method and laser annealing device
03/30/2010US7687379 Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same
03/30/2010US7687378 Fabricating method of nitride semiconductor substrate and composite material substrate
03/30/2010US7687376 Method of manufacturing vertical gallium nitride-based light emitting diode
03/30/2010US7687375 Lamination device manufacturing method
03/30/2010US7687374 Method of isolating semiconductor laser diodes
03/30/2010US7687373 Wafer dividing method and apparatus
03/30/2010US7687372 System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
03/30/2010US7687371 Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation
03/30/2010US7687370 Method of forming a semiconductor isolation trench
03/30/2010US7687369 Method of forming fine metal patterns for a semiconductor device using a damascene process
03/30/2010US7687368 Semiconductor device manufacturing method
03/30/2010US7687367 Manufacture method for semiconductor device having field oxide film
03/30/2010US7687366 Pre-patterned thin film capacitor and method for embedding same in a package substrate
03/30/2010US7687365 CMOS structure for body ties in ultra-thin SOI (UTSOI) substrates
03/30/2010US7687364 Low-k isolation spacers for conductive regions
03/30/2010US7687363 Method for manufacturing semiconductor device
03/30/2010US7687361 Method of fabricating a transistor having a triple channel in a memory device
03/30/2010US7687360 Method of forming spaced-apart charge trapping stacks
03/30/2010US7687359 Method for fabricating flash memory device
03/30/2010US7687358 Methods of forming a gated device
03/30/2010US7687357 Semiconductor device and method for fabricating the same
03/30/2010US7687356 Formation of shallow siGe conduction channel
1 ... 1856 1857 1858 1859 1860 1861 1862 1863 1864 1865 1866 1867 1868 1869 1870 1871 1872 1873 1874 1875 1876 ... 6590