Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2010
03/17/2010CN101673684A Method for manufacturing electro-static discharge protection diodes in high-voltage process
03/17/2010CN101673683A Substrate processing method
03/17/2010CN101673682A Method for etching wafer
03/17/2010CN101673681A Through hole etching method
03/17/2010CN101673680A Method for removing ammonium chloride crystals in silicon nitride deposition process
03/17/2010CN101673679A Thinned semiconductor wafer and method of thinning a semiconductor wafer
03/17/2010CN101673678A Growing method of aluminum layer and metal-insulator-metal board
03/17/2010CN101673677A Method for manufacturing semiconductor
03/17/2010CN101673676A Method of fabricating semiconductor device
03/17/2010CN101673675A Method for implementing ohm contact below intrinsic gallium arsenide surface 77 K
03/17/2010CN101673674A Polysilicon pre-doping method
03/17/2010CN101673673A Method for forming epitaxial wafer and epitaxial wafer formed by using same
03/17/2010CN101673672A Method for preparing nitride films
03/17/2010CN101673671A Method for manufacturing high-resistance resistors
03/17/2010CN101673670A Method for reducing warpage of III-nitride self-supporting wafer
03/17/2010CN101673669A Method of manufacturing semiconductor device
03/17/2010CN101673668A Method for polishing gallium nitride crystals
03/17/2010CN101673667A Substrate processing apparatus and substrate processing method
03/17/2010CN101673666A Laser repair device and a laser repair method
03/17/2010CN101673665A Substrate processing apparatus and substrate conveying apparatus for use in the same
03/17/2010CN101673664A Method for generating silicon wafer, silicon crystal column and semiconductor chip
03/17/2010CN101673663A Device for cleaning wafer
03/17/2010CN101673662A Method for stabilizing electrical thickness of gate oxide
03/17/2010CN101673661A Method for changing concentration distribution of plasma
03/17/2010CN101673660A Processing method of gap filling and manufacturing method of shallow trench isolation groove
03/17/2010CN101673659A Method for detecting measurement stability of tester tables
03/17/2010CN101673619A Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof
03/17/2010CN101673049A Gray tone mask and method for manufacturing gray tone mask
03/17/2010CN101673048A Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device
03/17/2010CN101673047A Mask plate and manufacturing method thereof and manufacturing method of TFT base plate
03/17/2010CN101673017A Active component array substrate and manufacturing method thereof
03/17/2010CN101673008A Active element array substrate, display panel and method for fabricating same
03/17/2010CN101671816A Method for depositing si-containing film, insulator film, and semiconductor device
03/17/2010CN101671538A Method for preparing silica/ceria composite abrasive grains
03/17/2010CN101670942A Substrate carrier
03/17/2010CN101670919A Storage container for substrate and substrate conveying device for the storage container
03/17/2010CN101670623A Main shaft of wire wheel
03/17/2010CN101670547A Polishing apparatus and method for separating a substrate from a substrate holding part
03/17/2010CN101670546A Method for polishing a semiconductor wafer
03/17/2010CN101670215A A segregator that separates liquid vapor mixture and a cardinal plate processing equipment containing the segregator
03/17/2010CN100594618C Semiconductor device and method for manufacturing the same
03/17/2010CN100594617C 场效应晶体管 FET
03/17/2010CN100594616C Semiconductor device including bipolar junction transistor with protected emitter-base junction
03/17/2010CN100594615C Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same
03/17/2010CN100594614C Organic electroluminescent display device and method of fabricating the same
03/17/2010CN100594612C Photo detector with dark current correction
03/17/2010CN100594607C Built-in type multifunctional conformity type structure and fabricating method thereof
03/17/2010CN100594606C Circuit device and its manufacturing method
03/17/2010CN100594603C Semiconductor device and fabrication process thereof
03/17/2010CN100594602C Semiconductor device and manufacturing process thereof
03/17/2010CN100594600C Complementary metal-oxide-semiconductor transistor and manufacturing method thereof
03/17/2010CN100594599C Integrating N-type and P-type metal gate transistors
03/17/2010CN100594598C Semiconductor device and manufacturing method of the same
03/17/2010CN100594597C Silicon nitride read only memory and method for manufacturing word and line
03/17/2010CN100594596C Physical quantity sensor, manufacturing method thereof, bonding device and lead frame used therein
03/17/2010CN100594595C Method and chip for integrating micro electromechanical system device and integrated circuit
03/17/2010CN100594594C Method and apparatus for electronic device manufacture using shadow masks
03/17/2010CN100594593C Semiconductor device and method for fabricating the same
03/17/2010CN100594592C Method for fabricating thin film transistor, and structure of base plate
03/17/2010CN100594591C Method for improving the performance of gallium nitride based field effect transistor
03/17/2010CN100594590C Schottky diode and method of manufacture
03/17/2010CN100594589C Heating plant and heating method used for batch type reaction chamber
03/17/2010CN100594588C Method and apparatus for forming silicon nitride film
03/17/2010CN100594587C 干蚀刻方法 The dry etching method
03/17/2010CN100594586C Method for production of thin-film semiconductor device
03/17/2010CN100594585C Method of manufacturing semiconductor device
03/17/2010CN100594584C Substrate processing device
03/17/2010CN100594583C Device and method for application of an even thin fluid layer to substrates
03/17/2010CN100594582C Method for forming quantum point
03/17/2010CN100594557C Integrated memory circuit arrangement
03/17/2010CN100594431C Immersion micro-image syatem and preparing process thereof
03/17/2010CN100594429C Production of X-ray mask by primary exposure with electron beam current mixed
03/17/2010CN100594428C Radiation source, photoetching device and manufacturing method of device
03/17/2010CN100594426C Photoresist composition used for micro image pattern and method for forming a integrated circuit pattern
03/17/2010CN100594424C Picture dimension correcting unit and method, photomask and test used photomask
03/17/2010CN100594411C Array substrate for liquid crystal display device and manufacturing method of the same
03/17/2010CN100594408C Liquid crystal display device array substrate and its production method
03/17/2010CN100594387C Method for measuring intrinsic capacity of metal oxide semiconductor component
03/17/2010CN100594261C Susceptor for vapor deposition apparatus
03/17/2010CN100594257C Apparatus and method for partial implantation using wide beam
03/17/2010CN100594223C Block copolymerized polyimide ink composition for printing
03/16/2010US7681173 Mask data generation method and mask
03/16/2010US7681055 Control device and method for a substrate processing apparatus
03/16/2010US7680563 Pressure control device for low pressure processing chamber
03/16/2010US7680383 Semiconductor-based broadband modulators
03/16/2010US7680375 Production device and production method for an optical device component having a grating structure
03/16/2010US7679958 Nonvolatile memory device and method for fabricating the same
03/16/2010US7679880 Electrostatic chuck and manufacturing method thereof
03/16/2010US7679800 Laser treatment apparatus and method of manufacturing semiconductor device
03/16/2010US7679731 Detecting and characterizing mask blank defects using angular distribution of scattered light
03/16/2010US7679720 Apparatus configured to position a workpiece
03/16/2010US7679718 Immersion exposure technique
03/16/2010US7679715 Lithographic processing cell, lithographic apparatus, track and device manufacturing method
03/16/2010US7679712 Liquid crystal display comprising a semiconductor formed in an opening of a partition formed on a source electrode and a drain electrode and method of manufacturing thereof
03/16/2010US7679202 Semiconductor device having symbol pattern utilized as identification sign
03/16/2010US7679194 Method of fabricating semiconductor memory device and semiconductor memory device driver
03/16/2010US7679193 Use of AIN as cooper passivation layer and thermal conductor
03/16/2010US7679192 Semiconductor device including cover layer
03/16/2010US7679189 Display device and manufacturing method of the same
03/16/2010US7679180 Bond pad design to minimize dielectric cracking