Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2010
03/17/2010EP1644988B1 High-density finfet integration scheme
03/17/2010EP1532689B1 Non-volatile semiconductor memory element and corresponding production and operation method
03/17/2010EP1527011B1 Layer system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof
03/17/2010EP1346261B1 Projection lithography using a phase-shifting aperture
03/17/2010EP1336130B1 Mitigation of multilayer defects on a reticle
03/17/2010EP1206399B1 Protective system for integrated circuit (ic) wafers
03/17/2010CN201425937Y Fixture
03/17/2010CN201425936Y Single-cavity double-wire vacuum device
03/17/2010CN101675715A Film-like circuit connecting material and connection structure for circuit member
03/17/2010CN101675514A Tungsten digitlines and methods of forming and operating the same
03/17/2010CN101675513A Threshold adjustment for high-k gate dielectric cmos
03/17/2010CN101675512A Separate layer formation in a semiconductor device
03/17/2010CN101675511A Processing device, processing method, method of recognizing processing target body, and storage medium
03/17/2010CN101675510A Wire bonding methods and bonding force calibration
03/17/2010CN101675509A Substrate cleaning techniques employing multi-phase solution
03/17/2010CN101675508A Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss
03/17/2010CN101675507A Silicon wafer and method for manufacturing the same
03/17/2010CN101675506A Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
03/17/2010CN101675505A Hardmask open and etch profile control with hardmask open
03/17/2010CN101675504A Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same
03/17/2010CN101675503A Method and system for distributing gas for a bevel edge etcher
03/17/2010CN101675502A Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
03/17/2010CN101675501A Method of fabricating a transistor with semiconductor gate combined locally with a metal
03/17/2010CN101675500A Exposure apparatus, exposure method and device manufacturing method
03/17/2010CN101675499A Soi substrate manufacturing method and soi substrate
03/17/2010CN101675498A Method and system for flip chip packaging of micro-mirror devices
03/17/2010CN101675489A Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same
03/17/2010CN101675390A Water-soluble resin composition for the formation of micropatterns and process for the formation of micropatterns with the same
03/17/2010CN101675138A Cmp compositions containing a soluble peroxometalate complex and methods of use thereof
03/17/2010CN101674699A Method and circuit to increase breakdown voltage of mos transistors at low temperatures
03/17/2010CN101674521A Production process of electroacoustic component
03/17/2010CN101674425A Image sensor and method for manufacturing the same
03/17/2010CN101674066A Method of forming an integrated semiconductor device and structure therefor
03/17/2010CN101673802A Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof
03/17/2010CN101673800A Method of manufacturing light-emitting diode device
03/17/2010CN101673797A Light emitting device
03/17/2010CN101673796A Optical-semiconductor device and method for manufacturing the same
03/17/2010CN101673790A Light-emitting diode and manufacturing method thereof
03/17/2010CN101673789A Light emitting diode package substrate structure, manufacturing method thereof and packaging structure thereof
03/17/2010CN101673772A Erasable metal-insulator-silicon capacitor structure
03/17/2010CN101673770A Thin film field-effect transistor and display using the same
03/17/2010CN101673769A Semiconductor element, semiconductor device and methods for manufacturing thereof
03/17/2010CN101673768A Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
03/17/2010CN101673767A Semiconductor device with increased channel area and method for manufacturing the same
03/17/2010CN101673766A (110)-oriented p-channel trench mosfet having high-K gate dielectric
03/17/2010CN101673765A Semiconductor device and manufacturing method thereof
03/17/2010CN101673764A Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
03/17/2010CN101673763A Ldmos transistor and preparation method thereof
03/17/2010CN101673762A LDMOS transistor structure and preparation method
03/17/2010CN101673755A Phase change memory cell utilizing composite structure diode and preparation method thereof
03/17/2010CN101673753A Piezoelectric transistor and method of manufacturing same
03/17/2010CN101673751A Image sensor and method for manufacturing the same
03/17/2010CN101673750A Image sensor and method of manufacturing the same
03/17/2010CN101673749A Solid-state imaging device and method of producing solid-state imaging device
03/17/2010CN101673748A Image sensor and method of manufacturing the same
03/17/2010CN101673746A Semiconductor device and a method of manufacturing the same
03/17/2010CN101673744A Transistor structure, dynamic random access memory structure and manufacturing method thereof
03/17/2010CN101673741A Semiconductor device and manufacturing method thereof
03/17/2010CN101673740A Semiconductor device and manufacturing method thereof
03/17/2010CN101673739A Semiconductor device and method of manufacturing the same
03/17/2010CN101673737A Semiconductor trench structure having a sealing plug and method
03/17/2010CN101673728A Model and method for measuring resistance of contact holes or through holes in bipolar transistor components
03/17/2010CN101673727A Structure for interconnecting medium with low dielectric constant and copper and integration method
03/17/2010CN101673726A Contact of semiconductor device and manufacturing method thereof
03/17/2010CN101673723A A semiconductor device package using discrete conductive layer to re-select bonding line path
03/17/2010CN101673719A A cbd contact resistance introducing a metal layer between sin and tin to improve p-tsv
03/17/2010CN101673718A Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus
03/17/2010CN101673717A Semiconductor device and method of manufacturing thereof
03/17/2010CN101673716A Silicone laminated substrate, method of producing same, silicone resin composition, and led device
03/17/2010CN101673715A Method for manufacturing shallow junction complementary bipolar transistor
03/17/2010CN101673714A Process for manufacturing flash memory unit
03/17/2010CN101673713A Method for preparing multi-level flash memory devices
03/17/2010CN101673712A Layout design method for N-channel field effect transistor array in CMOS technique
03/17/2010CN101673711A Semiconductor integrated circuit device and a method of manufacturing the same
03/17/2010CN101673710A Structure taking part of metal grid as grid medium etching blocking layer with high dielectric constant and integration method
03/17/2010CN101673709A Method of forming pattern in semiconductor device
03/17/2010CN101673708A Semiconductor device having an interlayer insulating film wiring laminated structure section and method of fabricating the same
03/17/2010CN101673707A Interconnected manufacture method of metal layers
03/17/2010CN101673706A Materials for adhesion enhancement of copper film on diffusion barriers
03/17/2010CN101673705A Preparation method of thin film of diffusion impervious layer
03/17/2010CN101673704A Reprocessing method capable of making precipitated copper molten in aluminum copper metal film
03/17/2010CN101673703A Fabricating method of shallow trench isolation structure
03/17/2010CN101673702A Fabricating method of shallow trench isolation structure
03/17/2010CN101673701A Method for forming shallow trench isolation structure and shallow trench isolation structure
03/17/2010CN101673700A High and low voltage isolation technology for integrated circuit
03/17/2010CN101673699A Carrying platform of substrate box
03/17/2010CN101673698A Cardinal plate transporting equipment
03/17/2010CN101673697A Front-opening unified pod with wafer constraint modules arranged on both sides of recessed area on door
03/17/2010CN101673696A Front-opening unified pod with wafer constraints arranged on door
03/17/2010CN101673695A Double-side detection equipment for bare crystalline grains
03/17/2010CN101673694A Fabrication method of space transformer for semiconductor test probe card
03/17/2010CN101673693A Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof
03/17/2010CN101673692A Two-step etching method for forming bonding pad
03/17/2010CN101673691A Multi-chip micro plugging-pulling encapsulating method
03/17/2010CN101673690A Image sensing device and encapsulating method thereof
03/17/2010CN101673689A Integrated circuit packaging method and circuit device capable of reducing power supply voltage drop of chip
03/17/2010CN101673688A Method of fabricating multi-layered substrate and the substrate thereof
03/17/2010CN101673687A Manufacturing method for field effect transistor
03/17/2010CN101673686A Semiconductor element and method for forming metal grid pile thereof
03/17/2010CN101673685A Manufacturing technology of groove MOSFET device with masking films of decreased number
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