Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2001
03/20/2001US6205071 Semiconductor memory device including sense amplifier circuit differing in drivability between data write mode and data read mode
03/20/2001US6205070 Current sense amplifier
03/20/2001US6205069 Semiconductor memory device with fast input/output line precharge scheme and method of precharging input/output lines thereof
03/20/2001US6205068 Dynamic random access memory device having a divided precharge control scheme
03/20/2001US6205067 Semiconductor memory device having burn-in mode operation stably accelerated
03/20/2001US6205066 Dram array with gridded sense amplifier power source for enhanced column repair
03/20/2001US6205064 Semiconductor memory device having program circuit
03/20/2001US6205061 Efficient back bias (VBB) detection and control scheme for low voltage drams
03/20/2001US6205053 Magnetically stable magnetoresistive memory element
03/20/2001US6205052 Magnetic element with improved field response and fabricating method thereof
03/20/2001US6205051 Stabilized magnetic memory cell
03/20/2001US6205050 Programmed circuit in a semiconductor device
03/20/2001US6205049 Five-transistor SRAM cell
03/20/2001US6205048 Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same
03/20/2001US6205047 Data memory device having an exclusive-or function and method of reading data therefrom
03/20/2001US6205046 Synchronous dynamic random-access memory
03/20/2001US6204723 Bias circuit for series connected decoupling capacitors
03/20/2001US6204538 SRAM cell
03/20/2001US6204114 Method of making high density semiconductor memory
03/20/2001CA2195836C Semiconductor memory having main word line and subword lines provided correspondingly to the main word line
03/15/2001WO2001018816A1 Memory cell arrangement and operational method therefor
03/15/2001WO2001018815A1 Self-erasing memory cell
03/15/2001WO2001018814A1 Pseudo-differential current sense amplifier with hysteresis
03/15/2001US20010000023 Semiconductor integrated circuit and data processing system
03/15/2001DE19947118C1 Verfahren und Schaltungsanordnung zum Bewerten des Informationsgehalts einer Speicherzelle Method and circuit for evaluating the information content of a memory cell
03/15/2001DE19942447A1 Speicherzellenanordnung und Verfahren zu deren Betrieb Memory cell arrangement and method of operation
03/15/2001DE19942437A1 Selbstlöschende Speicherzelle Self-extinguishing memory cell
03/15/2001DE10038228A1 Cellblock structure of non-volatile ferroelectric memory (FRAM), includes capacitor of ferroelectric material having high residual polarization for retaining data after removal of electric field
03/15/2001DE10014112A1 Multi-bank semiconductor memory device circuit arrangement, has column decoder blocks arranged between adjacent pairs of memory banks in which at least one global E/A line pair extends to adjacent memory bank
03/14/2001EP1083571A1 Semiconductor device with decreased power consumption
03/14/2001EP1083570A1 Method for clearing memory contents and memory array capable of performing the same
03/14/2001EP1082764A1 Semiconductor current-switching device having operational enhancer and method therefor
03/14/2001EP1082763A1 Nrom cell with improved programming, erasing and cycling
03/14/2001EP1082725A1 Magnetoresistive random access memory and method for reading/writing digital information to such a memory
03/14/2001EP0978123A4 Voltage sense amplifier and methods for implementing the same
03/14/2001EP0966742A4 Pump control circuit
03/13/2001US6202194 Method and apparatus for routing 1 of N signals
03/13/2001US6202180 Semiconductor memory capable of relieving a defective memory cell by exchanging addresses
03/13/2001US6202119 Method and system for processing pipelined memory commands
03/13/2001US6201760 Apparatus and method for performing data read operation in DDR SDRAM
03/13/2001US6201758 Semiconductor memory device permitting time required for writing data to be reduced
03/13/2001US6201757 Self-timed memory reset circuitry
03/13/2001US6201756 Semiconductor memory device and write data masking method thereof
03/13/2001US6201754 Semiconductor memory device having function of supplying stable power supply voltage
03/13/2001US6201751 Integrated circuit power-up controllers, integrated circuit power-up circuits, and integrated circuit power-up methods
03/13/2001US6201749 Semiconductor memory
03/13/2001US6201748 Semiconductor memory device having test mode
03/13/2001US6201746 Test method for high speed memory devices in which limit conditions for the clock are defined
03/13/2001US6201744 Semiconductor memory circuit and redundancy control method
03/13/2001US6201741 Storage device and a control method of the storage device
03/13/2001US6201733 Semiconductor integrated circuit device, memory module and storage device
03/13/2001US6201731 Electronic memory with disturb prevention function
03/13/2001US6201730 Sensing of memory cell via a plateline
03/13/2001US6201729 DRAM hidden row access method and apparatus
03/13/2001US6201728 Dynamic RAM, semiconductor storage device, and semiconductor integrated circuit device
03/13/2001US6201727 Nonvolatile ferroelectric random access memory device with segmented plate line scheme and a method for driving a plate line segment therein
03/13/2001US6201724 Semiconductor memory having improved register array access speed
03/13/2001US6201437 Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor
03/13/2001US6201436 Bias current generating circuits and methods for integrated circuits including bias current generators that increase and decrease with temperature
03/13/2001US6201378 Semiconductor integrated circuit
03/13/2001US6201282 Two bit ROM cell and process for producing same
03/13/2001US6201281 Semiconductor device and method for producing the same
03/08/2001WO2001016999A2 New approach for multilevel mrom
03/08/2001WO2001016958A1 Double data rate scheme for data output
03/08/2001WO2001016957A1 Apparatus for analogue information transfer
03/08/2001WO2001016956A1 Method and apparatus for supplying regulated power to memory device components
03/08/2001WO2001016955A1 Circuit and method for a multiplexed redundancy scheme in a memory device
03/08/2001WO2001016954A1 Pipeline structure of memory for high-fast row-cycle
03/08/2001DE19941348A1 Memory access unit for selectively accessing static or dynamic memory has external address bus used for addressing static memory or dynamic memory in dependence on internal address word
03/08/2001DE19940923A1 Read/write method for storing/extracting signal pattern using dynamic semiconductor store with data stored in form of matrix refresh each line with each read/write operation
03/08/2001DE19913570C2 Betriebsverfahren für einen integrierten Speicher und integrierter Speicher A method of operating an integrated memory and built-in memory
03/08/2001DE10033826A1 Semiconductor memory in the form of synchronous DRAMs designed with special data lead lengths and component spacings
03/08/2001DE10031479A1 Power supply controller for semiconductor memory e.g. DRAM, connects power supply lines when electric potential difference between the lines is of preset value and when refresh operation mode of switch is active
03/08/2001DE10024362A1 Semiconductor device operating on basis of constant current provided by constant current circuit damps noise generated in internal circuits with buffer circuits
03/08/2001DE10023248A1 Schaltung und Verfahren zur Taktsignalsynchronisation und Zeit/Digital-Wandler hierfür Circuit and method for clock signal synchronization and time A / D converter for this purpose
03/08/2001DE10020150A1 Semiconductor SRAM with reduced storage cell area and improved data retention interval has negative resistance section with tunnel insulating layer formed on active p-type region
03/07/2001EP1081715A1 Logic-merged memory
03/07/2001EP1081714A1 DRAM for storing data in pairs of cells
03/07/2001EP1081713A1 Ferroelectric memory device with internally lowered supply voltage
03/07/2001EP1081712A1 Serial access memory having data registers shared in units of a plurality of columns
03/07/2001EP1081711A2 Dynamic type memory
03/06/2001US6199139 Refresh period control apparatus and method, and computer
03/06/2001US6199025 Semiconductor device having selectable device type and methods of testing device operation
03/06/2001US6198690 Clock control circuit with an input stop circuit
03/06/2001US6198689 Integrated circuit device with built-in self timing control circuit
03/06/2001US6198688 Interface for synchronous semiconductor memories
03/06/2001US6198686 Memory device having row decoder
03/06/2001US6198683 Memory device
03/06/2001US6198680 Circuit for resetting a pair of data buses of a semiconductor memory device
03/06/2001US6198679 Semiconductor memory device
03/06/2001US6198677 Boosted sensing ground circuit
03/06/2001US6198674 Data strobe signal generator of semiconductor device using toggled pull-up and pull-down signals
03/06/2001US6198671 Semiconductor memory device
03/06/2001US6198670 Bias generator for a four transistor load less memory cell
03/06/2001US6198660 Synchronous multilevel non-volatile memory and related reading method
03/06/2001US6198658 High density flash memory architecture with columnar substrate coding
03/06/2001US6198656 Asymmetric memory cell for single-ended sensing
03/06/2001US6198654 Ferroelectric memory device and method of reading data therefrom
03/06/2001US6198653 Ferroelectric memory
03/06/2001US6198652 Non-volatile semiconductor integrated memory device